Barrier Inhomogeneity and Electrical Properties of InN Nanodots/Si Heterojunction Diodes

The electrical transport behavior of n-n indium nitride nanodot-silicon (InN ND-Si) heterostructure Schottky diodes is reported here, which have been fabricated by plasma-assisted molecular beam epitaxy. InN ND structures were grown on a 20 nm InN buffer layer on Si substrates. These dots were found to be single crystalline and grown along [0 0 0 1] direction. Temperature-dependent current density-voltage plots (J-V-T) reveal that the ideality factor (eta) and Schottky barrier height (SBH) (Phi(B)) are temperature dependent. The incorrect values of the Richardson constant (A**) produced suggest an inhomogeneous barrier. Descriptions of the experimental results were explained by using two models. First one is barrier height inhomogeneities (BHIs) model, in which considering an effective area of the inhomogeneous contact provided a procedure for a correct determination of A**. The Richardson constant is extracted similar to 110 A cm(-2) K(-2) using the BHI model and that is in very good agreement with the theoretical value of 112 A cm(-2) K(-2). The second model uses Gaussian statistics and by this, mean barrier height Phi(0) and A** were found to be 0.69 eV and 113 A cm(-2) K(-2), respectively.

Modeling of room temperature current-voltage measurements on homo-junction HgCdTe diodes exhibiting nonequilibrium effects

HgCdTe mid wave infrared (MWIR) n(+)/nu/p(+) homo-junction photodiodes with planar architecture are designed, fabricated, and measured at room temperature. An improved analytical I-V model is reported by incorporating trap assisted tunneling and electric field enhanced Shockley-Read-Hall generation recombination process due to dislocations. Tunneling currents are fitted before and after the Auger suppression of carriers with energy level of trap (E-t), trap density (N-t), and the doping concentrations of n(+) and nu regions as fitting parameters. Values of E-t and N-t are determined as 0.79 E-g and similar to 9 x 10(14) cm(-3), respectively, in all cases. Doping concentration of nu region was found to exhibit nonequilibrium depletion from a value of 2 x 10(16) to 4 x 10(15) cm(-3) for n(+) doping of 2 x 10(17) cm(-3). Pronounced negative differential resistance is observed in the homo-junction HgCdTe diodes. (C) 2012 American Institute of Physics. [doi:10.1063/1.3682483]

Pt/CdTe/Pt asymmetric nano-Schottky diodes from colloidal quantum dots

We have fabricated nano-Schottky diodes of CdTe QDs with platinum metal electrodes in metal-semiconductor-metal planar configuration by drop-casting. The observed high value of ideality factor (13.3) of the diode was possibly due to the presence of defects in colloidal QDs. We observed asymmetry and non-linear nature of I-V characteristics between forward and reverse directions, which has been explained in terms of size distributions of quantum dots due to coffee ring effect. Copyright 2011 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. doi:10.1063/1.3669408]

Investigations on supersonic combustion in a combustion-driven shock tunnel

This article reports experimental results on supersonic combustion in a new facility. The facility is a combustion-driven shock tunnel, which is cheaper to build than the facilities in which such experiments are carried out conventionally. The observation region is a zone between two parallel flat plates with a 33 degrees wedge attached to the upstream end of the bottom plate. Gaseous hydrogen is injected at an angle of 45 degrees into an oncoming supersonic flow of Mach 2 (approximate) from a port on the bottom plate. The resulting flow field is visualized by a high speed camera in a dark background. Three different test gases, namely nitrogen, air, and oxygen-rich air are used, and the results are compared. A distinct luminosity due to combustion for oxygen-containing test gases is observed. Heat-transfer rates on a probe placed at the downstream end of the observation region and midway between the parallel plates are measured and compared for the three cases. Wall static pressure at 28 mm downstream of the injection port on the bottom plate is also presented.

Analysis of the temperature-dependent current-voltage characteristics and the barrier-height inhomogeneities of Au/GaN Schottky diodes

In this report, the currentvoltage (IV) characteristics of Au/GaN Schottky diodes have been carried out in the temperature range of 300510?K. The estimated values of the Schottky-barrier height (SBH) and the ideality factor of the diodes based on the thermionic emission (TE) mechanism were found to be temperature dependent. The barrier height was found to increase and the ideality factor to decrease with increasing temperature. The conventional Richardson plot of ln(Is/T2) versus 1/kT gives the SBH of 0.51?eV and Richardson constant value of 3.23?X?10-5?A?cm-2?K-2 which is much lower than the known value of 26.4?A?cm-2?K-2 for GaN. Such discrepancies of the SBH and Richardson constant value were attributed to the existence of barrier-height inhomogeneities at the Au/GaN interface. The modified Richardson plot of ln(Is/T2)q2 sigma 2/2k2T2 versus q/kT, by assuming a Gaussian distribution of barrier heights at the Au/GaN interface, provided the SBH of 1.47?eV and Richardson constant value of 38.8?A?cm-2?K-2. The temperature dependence of the barrier height is interpreted on the basis of existence of the Gaussian distribution of the barrier heights due to the barrier-height inhomogeneities at the Au/GaN interface.

Effect of thickness variation of hole injection and hole blocking layers on the performance of fluorescent green organic light emitting diodes

In this paper we present the effect of thickness variation of hole injection and hole blocking layers on the performance of fluorescent green organic light emitting diodes (OLEDs). A number of OLED devices have been fabricated with combinations of hole injecting and hole blocking layers of varying thicknesses. Even though hole blocking and hole injection layers have opposite functions, yet there is a particular combination of their thicknesses when they function in conjunction and luminous efficiency and power efficiency are maximized. The optimum thickness of CuPc (Copper(II) phthalocyanine) layer, used as hole injection layer and BCP (2,9 dimethyl-4,7-diphenyl-1,10-phenanthroline) used as hole blocking layer were found to be 18 nm and 10 nm respectively. It is with this delicate adjustment of thicknesses, charge balancing is achieved and luminous efficiency and power efficiency were optimized. The maximum luminous efficiency of 3.82 cd/A at a current density of 24.45 mA/cm(2) and maximum power efficiency of 2.61 lm/W at a current density of 5.3 mA/cm(2) were achieved. We obtained luminance of 5993 cd/m(2) when current density was 140 mA/cm(2). The EL spectra was obtained for the LEDs and found that it has a peaking at 524 nm of wavelength. (C) 2012 Elsevier B.V. All rights reserved.

Seismic stability of a long unsupported circular tunnel

The stability of a long unsupported circular tunnel (opening) in a cohesive frictional soil has been assessed with the inclusion of pseudo-static horizontal earthquake body forces. The analysis has been performed under plane strain conditions by using upper bound finite element limit analysis in combination with a linear optimization procedure. The results have been presented in the form of a non-dimensional stability number (gamma H-max/c); where H = tunnel cover, c refers to soil cohesion and gamma(max) is the maximum unit weight of soil mass which the tunnel can support without collapse. The results have been obtained for various values of H/D (D = diameter of the tunnel), internal friction angle (phi) of soil, and the horizontal earthquake acceleration coefficient (alpha(h)). The computations reveal that the values of the stability numbers (i) decrease quite significantly with an increase in alpha(h), and (ii) become continuously higher for greater values of H/D and phi. As expected, the failure zones around the periphery of the tunnel becomes always asymmetrical with an inclusion of horizontal seismic body forces. (c) 2012 Elsevier Ltd. All rights reserved.

Stability of a long unsupported circular tunnel in soils with seismic forces

By using the lower-bound finite element limit analysis, the stability of a long unsupported circular tunnel has been examined with an inclusion of seismic body forces. The numerical results have been presented in terms of a non-dimensional stability number (gamma H/c) which is plotted as a function of horizontal seismic earth pressure coefficient (k (h)) for different combinations of H/D and I center dot; where (1) H is the depth of the crest of the tunnel from ground surface, (2) D is the diameter of the tunnel, (3) k (h) is the earthquake acceleration coefficient and (4) gamma, c and I center dot define unit weight, cohesion and internal friction angle of soil mass, respectively. The stability numbers have been found to decrease continuously with an increase in k (h). With an inclusion of k (h), the plastic zone around the periphery of the tunnel becomes asymmetric. As compared to the results reported in the literature, the present analysis provides a little lower estimate of the stability numbers. The numerical results obtained would be useful for examining the stability of unsupported tunnel under seismic forces.

Proposal for Graphene-Boron Nitride Heterobilayer-Based Tunnel FET

We investigate the gate-controlled direct band-to-band tunneling (BTBT) current in a graphene-boron nitride (G-BN) heterobilayer channel-based tunnel field effect transistor. We first study the imaginary band structure of hexagonal and Bernal-stacked heterobilayers by density functional theory, which is then used to evaluate the gate-controlled current under the Wentzel-Kramers-Brillouin approximation. It is shown that the direct BTBT is probable for a certain interlayer spacing of the G-BN which depends on the stacking orders.

Measurement of temperature and pressure on the surface of a blunt cone using FBG sensor in hypersonic wind tunnel

Measurement of temperature and pressure exerted on the leeward surface of a blunt cone specimen has been demonstrated in the present work in a hypersonic wind tunnel using fiber Bragg grating (FBG) sensors. The experiments were conducted on a 30 degrees apex-angle blunt cone with 51 mm base diameter at wind flow speeds of Mach 6.5 and 8.35 in a 300 mm hypersonic wind tunnel of Indian Institute of Science, Bangalore. A special pressure insensitive temperature sensor probe along with the conventional bare FBG sensors was used for explicit temperature and aerodynamic pressure measurement respectively on the leeward surface of the specimen. computational fluid dynamics (CFD) simulation of the flow field around the blunt cone specimen has also been carried out to obtain the temperature and pressure at conditions analogous to experiments. The results obtained from FBG sensors and the CFD simulations are found to be in good agreement with each other.

Model for triplet state engineering in organic light emitting diodes

Engineering the position of the lowest triplet state (T-1) relative to the first excited singlet state (S-1) is of great importance in improving the efficiencies of organic light emitting diodes and organic photovoltaic cells. We have carried out model exact calculations of substituted polyene chains to understand the factors that affect the energy gap between S-1 and T-1. The factors studied are backbone dimerisation, different donor-acceptor substitutions, and twisted geometry. The largest system studied is an 18 carbon polyene which spans a Hilbert space of about 991 x 10(6). We show that for reverse intersystem crossing process, the best system involves substituting all carbon sites on one half of the polyene with donors and the other half with acceptors. (C) 2014 AIP Publishing LLC.

Stability of a circular tunnel in presence of pseudostatic seismic body forces

The stability of a long circular tunnel in a cohesive frictional soil medium has been determined in the presence of horizontal pseudo-static seismic body forces. The tunnel is supported by means of lining and anchorage system which is assumed to exert uniform internal compressive normal pressure on its periphery. The upper bound finite element limit analysis has been performed to compute the magnitude of the internal compressive pressure required to support the tunnel. The results have been presented in terms of normalized compressive normal stress, defined in terms of sigma(i)/c; where sigma(i) is the magnitude of the compressive normal pressure on the periphery of the tunnel and c refers to soil cohesion. The variation of sigma(i)/c with horizontal earthquake acceleration coefficient (alpha(h)) has been established for different combinations of H/D, gamma D/c and phi where (i) H and D refers to tunnel cover and diameter, respectively, and (ii) gamma and phi correspond to unit weight and internal friction angle of soil mass, respectively. Nodal velocity patterns have also been plotted for assessing the zones of significant plastic deformation. The analysis clearly reveals that an increase in the magnitude of the earthquake acceleration leads to a significant increment in the magnitude of internal compressive pressure. (C) 2014 Elsevier Ltd. All rights reserved.

Shock tunnel experiments on control of shock induced large separation bubble using boundary layer bleed

Shock-Boundary Layer Interaction (SBLI) often occurs in supersonic/hypersonic flow fields. Especially when accompanied by separation (termed strong interaction), the SBLI phenomena largely affect the performance of the systems where they occur, such as scramjet intakes, thus often demanding the control of the interaction. Experiments on the strong interaction between impinging shock wave and boundary layer on a flat plate at Mach 5.96 are carried out in IISc hypersonic shock tunnel HST-2. The experiments are performed at moderate flow total enthalpy of 1.3 MJ/kg and freestream Reynolds number of 4 million/m. The strong shock generated by a wedge (or shock generator) of large angle 30.96 degrees to the freestream is made to impinge on the flat plate at 95 mm (inviscid estimate) from the leading edge, due to which a large separation bubble of length (75 mm) comparable to the distance of shock impingement from the leading edge is generated. The experimental simulation of such large separation bubble with separation occurring close to the leading edge, and its control using boundary layer bleed (suction and tangential blowing) at the location of separation, are demonstrated within the short test time of the shock tunnel (similar to 600 mu s) from time resolved schlieren flow visualizations and surface pressure measurements. By means of suction - with mass flow rate one order less than the mass flow defect in boundary layer - a reduction in separation length by 13.33% was observed. By the injection of an array of (nearly) tangential jets in the direction of mainstream (from the bottom of the plate) at the location of separation - with momentum flow rate one order less than the boundary layer momentum flow defect - 20% reduction in separation length was observed, although the flow field was apparently unsteady. (C) 2014 Elsevier Masson SAS. All rights reserved.

Role of boron diffusion in CoFeB/MgO magnetic tunnel junctions

Several scientific issues concerning the latest generation read heads for magnetic storage devices, based on CoFeB/MgO/CoFeBmagnetic tunnel junctions (MTJs) are known to be controversial, including such fundamental questions as to the behavior and the role of B in optimizing the physical properties of these devices. Quantitatively establishing the internal structures of several such devices with different annealing conditions using hard x-ray photoelectron spectroscopy, we resolve these controversies and establish that the B diffusion is controlled by the capping Ta layer, though Ta is physically separated from the layer with B by several nanometers. While explaining this unusual phenomenon, we also provide insight into why the tunneling magnetoresistance (TMR) is optimized at an intermediate annealing temperature, relating it to B diffusion, coupled with our studies based on x-ray diffraction and magnetic studies.

High T-g fluoranthene-based electron transport materials for organic light-emitting diodes

In this study, fluoranthene-based derivatives with a high thermal stability were synthesized for applications in organic electroluminescent devices. The two derivatives synthesized in this study, bis(4-(7,9,10-triphenylfluoranthen-8-yl)phenyl)sulfane (TPFDPS) and 2,8-bis(7,9,10-triphenylfluoranthen-8-yl)dibenzob,d]thiophene (TPFDBT), were characterized by cyclic voltammetry, differential scanning calorimetry (DSC) and thermogravimetric analysis (TGA). TPFDPS exhibits a high T-g of 210 degrees C while TPFDBT is crystalline in nature. Both the derivatives are thermally stable up to 500 degrees C. The charge transport studies reveal predominant electron transport properties. Subsequently, we fabricated blue OLEDs with 2-tert-butyl-9,10-bis-(beta-naphthyl)-anthracene (TBADN) as the emitting layer to demonstrate the applications of these molecules as an electron transporting layer.