Fin-Enabled-Area-Scaled Tunnel FET

While keeping the technological evolution and commercialization of FinFET technology in mind, this paper discloses a novel concept that enables area-scaled or vertical tunneling in Fin-based technologies. The concept provides a roadmap for beyond FinFET technologies, while enjoying the advantages of FinFET-like structure without demanding technological abruptness from the existing FinFET technology nodes to beyond FinFET nodes. The proposed device at 10-nm gate length, when compared with the conventional vertical tunneling FET or planar area-scaled device, offers 100% improvement in the ON-current, 15x reduction in the OFF-current, 3x increase in the transconductance, 30% improvement in the output resistance, 55% improvement in the unity gain frequency, and more importantly 6x reduction in the footprint area for a given drive capability. Furthermore, the proposed device brings the average and minimum subthreshold slope down to 40 and 11 mV/decade at 10-nm gate length. This gives a path for beyond FinFET system-on-chip applications, while enjoying the analog, digital, and RF performance improvements.

Shock tunnel measurements of surface pressures in shock induced separated flow field using MEMS sensor array

Characterized not just by high Mach numbers, but also high flow total enthalpies-often accompanied by dissociation and ionization of flowing gas itself-the experimental simulation of hypersonic flows requires impulse facilities like shock tunnels. However, shock tunnel simulation imposes challenges and restrictions on the flow diagnostics, not just because of the possible extreme flow conditions, but also the short run times-typically around 1 ms. The development, calibration and application of fast response MEMS sensors for surface pressure measurements in IISc hypersonic shock tunnel HST-2, with a typical test time of 600 mu s, for the complex flow field of strong (impinging) shock boundary layer interaction with separation close to the leading edge, is delineated in this paper. For Mach numbers 5.96 (total enthalpy 1.3 MJ kg(-1)) and 8.67 (total enthalpy 1.6 MJ kg(-1)), surface pressures ranging from around 200 Pa to 50 000 Pa, in various regions of the flow field, are measured using the MEMS sensors. The measurements are found to compare well with the measurements using commercial sensors. It was possible to resolve important regions of the flow field involving significant spatial gradients of pressure, with a resolution of 5 data points within 12 mm in each MEMS array, which cannot be achieved with the other commercial sensors. In particular, MEMS sensors enabled the measurement of separation pressure (at Mach 8.67) near the leading edge and the sharply varying pressure in the reattachment zone.