RF Sputtered Er2O3 Thin Films as High-k Gate Dielectrics for Germanium MOS Devices

We report the material and electrical properties of Erbium Oxide (Er2O3) thin films grown on n-Ge (100) by RF sputtering. The properties of the films are correlated with the processing conditions. The structural characterization reveals that the films annealed at 550 degrees C, has densified as compared to the as-grown ones. Fixed oxide charges and interface charges, both of the order of 10(13)/cm(2) is observed.

Adsorption-desorption and photocatalytic properties of inorganic-organic hybrid cadmium thiosulfate compounds

Three inorganic-organic hybrid framework cadmium thiosulfate phases have been investigated for adsorption and photodegradation of organic dye molecules. Different classes of organic dyes, viz., triaryl methane, azo, xanthene, anthraquinone, have been studied. The anionic dyes with sulfonate groups appear to readily adsorb on the cadmium thiosulfate compounds in an aqueous medium. The adsorption of the dye molecules, however, does not create any structural changes on the cadmium thiosulfate compounds, though weak electronic interactions have been observed. The adsorbed dyes have been desorbed partially in an alcoholic medium, suggesting possible applications in scavenging specific anionic dyes from the aqueous solutions. Langmuir adsorption/desorption isotherms have been used to model this behavior. UV-assisted (lambda(max) = 365 nm) photocatalytic decomposition studies on the cationic dyes indicate reasonable activity comparable with that of Degussa P-25 (TiO2) catalyst. Sunlight assisted photocatalyti studies have been carried out in detail employing hybrid framework compounds. The Langmuir-Hinshelwood kinetics model, employed to follow the degradation profile of the organic dyes, indicates that the photocatalytic degradation follows the order: triaryl methane > azo > xanthene.

Fermi level depinning at the germanium Schottky interface through sulfur passivation

We demonstrate the depinning of Fermi level on both p- and n-type germanium after sulfur passivation by aqueous (NH4)(2)S treatment. Schottky contacts realized using metals with a wide range of work functions produce nearly ideal behavior confirming that the Fermi level is depinned. Examination of the passivated surface using x-ray photoelectron spectroscopy reveals bonding between Ge and sulfur.It is shown that good Ohmic contacts to n-type Ge and a hole barrier height (phi(Bp)) of 0.6 eV to p-type Ge can be achieved after this passivation treatment, with Zr Schottky contacts. This is the highest phi(Bp) reported so far.

Studies of the polarographic and coulometric behaviour of aromatic nitro-compounds: I. Nitrobenzene in ethanol

A detailed polarographic (a.c. and d.c.) and coulometric investigation of nitrobenzene has been made at various pH values in the presence of different concentrations of ethanol. Below pH 4.7, two waves are apparent but above this pH, the second wave does not appear. Coulometric evidence indicates that the first and second waves correspond to the four-and two-electron processes, respectively. The coulometric method was not applicable in sodium hydroxide and sodium acetate solutions. When the diffusion coefficients (from the diaphragm cell) are used in the Ilkovic equation, no reliable conclusions can be reached for the number of electrons involved in the reduction process in alkaline solutions. The a.c. polarographic method gives evidence for the formation of species such as: C6H5NO2H22+, C6H5NO2− and C6H5NO22−. Analysis of d.c. polarographic data by Delahay's treatment of irreversible waves, indicates that the number of electrons involved in the rate-determining step is 2. In sodium hydroxide solutions, however, the first main wave is split indicating more than one rate-determining step. The results presented in this paper indicate that the first wave in the reduction of nitrobenzene is a four-electron process at all pH values. The second wave, which appears below pH 4.7, corresponds to a two-electron process irrespective of wave heights. The difference in the a.c. polarographic behaviour in acid and alkaline solutions has given evidence for the formation of species like C6H5NO2H2, C6H5NO2−, and C6H5NO22.

Reactive characteristics of narrow germanium p-n junctions in the breakdown region

An inductive behaviour observed in germanium p-n junctions in the breakdown region is reported.

Dipole moments and structure of some organoselenium compounds

The dipole moments of di-p-tolyl selenide (1.74 D), di-p-tolyl selenide (1.00 D), di-m-tolyl selenide (1.66 D), di-p-anisyl selenide (2.35 D) and di-p-tolyl selenium dichloride (3.69 D) have been determined in benzene at 35°. The results are analysed in terms of mesomeric effects and internal rotation in these systems. The dipole moments of a few aliphatic selenides have been theoretically evaluated.

Reverse bias capacitance measurements on copper-doped germanium p-n junctions in the breakdown region

Results of measurements at a high frequency on reverse bias capacitance of copper-doped germanium junctions are reported. Phenomenal increase in capacitance is found in the breakdown region, particularly at low temperatures.

Spectroscopic studies of n-donor - σ-acceptor systems: Carbonyl and thiocarbonyl compounds as donors

The interaction of ketones and various thiocarbonyl derivatives with iodine has been examined. The thermodynamics of the interaction of carbonyl and thiocarbonyl donors have been discussed and compared.

Separation of vitamins A1 and A2 allied compounds by thin-layer chromatography

A simple and rapid method for the separation of vitamins A1 and A2 and allied compounds by thin-layer chromatography using kieselgel has been described. The method, however, cannot bbe applied for quantitative estimation.

Charge distribution, dipole moment and molecular structure of silyl compounds

The formal charge distribution and hence the electric moments of a number of halosilanes and their methyl derivatives have been calculated by the method of Image and Image . The difference between the observed and the calculated values in simple halosilanes is attributed to a change in the hybridization of the terminal halogen atom and in methyl halosilanes to the enhanced electron release of the methyl group towards silicon compared with carbon.

Electric dipole moments and molecular structure of aliphatic nitro compounds and oximes

Using the treatment of Smith et al. charge distributions in and consequently the dipole moments of some aliphatic nitro compounds and oximes have been evaluated. The mesomeric moment derived as a difference between the calculated and the observed values gives a clear picture as to how the positive (+M) and the negative (-M) mesomeric effects operate in such systems.

Recombination and trapping in n-type cobalt-doped germanium

The role of cobalt centers in promoting the recombination and trapping processes in n-type germanium has been investigated. Data on lifetime measurements carried out by the steadystate photoconductivity and photo-magneto-electric methods in the temperature range 145 to 300°K on n-type germanium samples containing cobalt in the concentration range 1·1013 to 5.·014/cm3 are presented. The results are analysed on the basis of Sah-Shockley's multi-level formula to yield the capture cross-sections Sp= (hole capture cross-section at doubly negatively charged center) and Sn-(electron capture cross-section at singly negatively charged center) and temperature dependence. It is found that Sp= is (22 ± 6). 10-16 cm2 and Sn- is ∼ 0·1. 10-16 cm2 at 145°K. Sp= varies (n = 3·5 to 4·5) in the range 145-220°K; above 225°K the index 'n' tends to a smaller value. Sn- is practically temperature independent below 180°K and increases with increase of temperature above 180°K. The value of Sp= and its temperature variation lead one to the conclusion that during capture at attractive centers, the phonon cascade mechanism is responsible for the dissipation of the recombination energy.

Nature, stability and bonding of the peroxy group in peroxy titanium compounds

Some physicochemical properties of peroxy titanium compounds are explained by assigning a strained triangular ring structure to the peroxy titanyl group, with a bent and reduced overlap of the O---O bonding orbitals. The stability of the peroxy group is found to depend on the stability of the other ligands. The decreasing order of stability of the peroxy group in the compounds is as: oxalato > meleato > malonato > sulphato > peroxide of titanium.

Electron-hole recombination in cobalt-doped p-type germanium

The recombination properties of cobalt centers in p-type germanium containing cobalt in the concentration range 1014 to 1016 atoms/cm3 have been investigated. The measurement of lifetime has been carried out by steady-state photoconductivity and photo-magneto-electric methods in the temperature range 145 to 300°K. The cross-sections Sno (electron capture cross-section at neutral centers). Sn- (electron capture cross-section at singly negatively charged centers) and their temperature variations have been estimated by the analysis of the lifetime data on the basis of Sah-Shockley's multi-level formula. The value of Sno is (15±5).10-16 cm2 and is temperature independent. The value of Sn- is ≈4·10-16 cm2 around 225°K and it increases with increase of temperature. The possible mechanisms for capture at neutral and repulsive centers are discussed and a summary of the capture cross-sections for cobalt centers is given. A comparison of the cross-section values of cobalt and their temperature variations with those of the related impurities-manganese, iron and nickel-in germanium has been made.