High-Pressure Low-Temperature Locknut Cell For Both Electron-Paramagnetic-Res And Nmr-Studies To 10 Kilobars And 77-K

A locked high-pressure cell with working pressure range up to 10 kbars suitable for low-temperature studies to 77 K has been described. It can be used for both EPR and NMR studies of single crystals (and other solid samples). The high-pressure seal and all other aspects of the cell remain the same for either application. Only a change of the bottom plug is required for a switch from a nuclear-magnetic-resonance (NMR) to an electron-paramagnetic-resonance (EPR) experiment. Details of the procedure for the calibration of pressure inside the cell at various temperatures are discussed. The performance of the cell in EPR (Cr3+ion) and NMR (27Al nucleus) studies is reported.

Electron Mean Energy, Secondary Ionization Coefficients And (E/P)Crit In Binary-Mixtures Of Sf6-N2 And Ccl2f2-N2

Measurements of the ratio of diffusion coefficient to mobility (D/ mu ) of electrons in SF6-N2 and CCl2F2-N2 mixtures over the range 80electron mean energies epsilon c.mix corresponding to (E/p)c.mix, are found to vary with the percentage of the electronegative gas in the mixture (F) according to the following relationship: (E/p)c.mix=(E/p)c.N(2)+((E/p)c.A-(E/p)c.N(2)) (1-exp(- beta F/100-F)) and epsilon c.mix= epsilon c.N(2)+( epsilon c.A- epsilon c.N(2)) (1-exp(- beta F/100-F)) where A refers to the attaching gas, either SF6 or CCl2F2 and beta is a constant, equal to 2.43 for SF6 mixtures and 5.12 for CCl2F2 mixtures. In the present study, it has been possible to show that beta is indeed to a factor of synergism. Estimated gamma values (secondary ionisation coefficients) did not show any significant variation with F for F<50.

Highly Enhanced Thermopower in Two-Dimensional Electron Systems at Millikelvin Temperatures

We report experimental observation of an unexpectedly large thermopower in mesoscopic two-dimensional (2D) electron systems in GaAs/AlGaA heterostructures at sub-Kelvin temperatures and zero magnetic field. Unlike conventional nonmagnetic high-mobility 2D systems, the thermopower in our devices increases with decreasing temperature below 0.3 K, reaching values in excess of 100 mu V/K, thus exceeding the free electron estimate by more than 2 orders of magnitude. With support from a parallel study of the local density of states, we suggest such a phenomenon to be linked to intrinsic localized states and many-body spin correlations in the system.

High Resoulution Electron Microscopy of Chloritoid Minerals From Different Geological Melieu

Structural defects of three chloritoid minerals from distinet geologic melieu have been investigated by high resolution electron microscopy. X-ray powder and electron diffraction patterns indicate that the chloritoid from one geological source (A) is2M 1+2M2 monoclinic variant while those from another geological source (B) are 2M 2 monoclinic variants. In a typical one-dimensional lattice image of a crystal from sourceA, the 2M 2 matrix is broken by insertion of triclinic inter-growths. Another crystal with the 2M 2 matrix showed single, triple, quadruple and quintuple layers displaying an unusually high degree of disorder. Lattice images of 2M 2 monoclinic variants from sourceB yielded more homogeneous micrographs. The important finding from the present studies is that the chloritoid from sourceA is a severely disordered low-temperature intermediate phase in the conversion of the triclinic chloritoid to the high-temperature ordered monoclinic variants of sourceB. Severely disordered chloritoids, marking the beginning of low grade metamorphism, are generated as intermediates between the state of complete disordered arrangement towards the end of low grade metamorphism within the narrow stability range of 400°–500°C.

A probabilistic approach to the problem of electron localization in disordered systems and sharpness of the mobility edge

By applying the theory of the asymptotic distribution of extremes and a certain stability criterion to the question of the domain of convergence in the probability sense, of the renormalized perturbation expansion (RPE) for the site self-energy in a cellularly disordered system, an expression has been obtained in closed form for the probability of nonconvergence of the RPE on the real-energy axis. Hence, the intrinsic mobility mu (E) as a function of the carrier energy E is deduced to be given by mu (E)= mu 0exp(-exp( mod E mod -Ec) Delta ), where Ec is a nominal 'mobility edge' and Delta is the width of the random site-energy distribution. Thus mobility falls off sharply but continuously for mod E mod >Ec, in contradistinction with the notion of an abrupt 'mobility edge' proposed by Cohen et al. and Mott. Also, the calculated electrical conductivity shows a temperature dependence in qualitative agreement with experiments on disordered semiconductors.

A high gain aluminium electron multiplier

A twenty stage electron multiplier using aluminium as dynode material is described. When operated in DC mode, very stable gains approaching 106 were obtained with input currents of the order of 10-12 A, even after repeated exposures to the atmospheres.

The ratio of diffusion coefficient to mobility for slow electrons in dry air

Using Huxley's solution of the diffusion equation for electron-attaching gases, the ratio of diffusion coefficient D to mobility μ for electrons in dry air was measured over the range 3·06 × 10-17

Study of the electronic structures of high Tc cuprate superconductors by electron energy loss and secondary electron emission spectroscopies

Energy loss spectra of superconducting YBa2Cu3O6.9' Bi1.5Pb0.5Ca2.5Sr1.5Cu3O10+δ and Tl2CaBa2Cu3O8 obtained at primary electron energies in the 170–310 eV range show features reflecting the commonalities in their electronic structures. The relative intensity of the plasmon peak shows a marked drop across the transition temperature. Secondary electron emission spectra of the cuprates also reveal some features of the electronic structure.

Electron microscopic investigation of high-temperature oxide superconductors

Electron microscopic investigations have been carried out on superconducting YBa2Cu3 O7−δ, NdBa2Cu3 O7−δ and related oxides. All these orthorhombic oxides exhibit twin domains. Based on high resolution electron microscopy, it is shown that there is no significant change in the structure across the twins. Oxides of the La2−x Sr x (Ba x )CuO4 system do not show twins, but exhibit other types of defects. Twins appear to be characteristic of only the orthorhombic 123 structures.

Electron transfer reaction in the marcus inverted region: role of high frequency vibrational modes

A theoretical study of the dynamics of photo-electron transfer reactions in the Marcus inverted regime is presented. This study is motivated partly by the recent proposal of Barbara et al. (J. Phys. Chem. 96, 3728, 1991) that a minimal model of an electron transfer reaction should consist of a polar solvent mode (X), a low frequency vibrational mode (Q) and one high frequency mode (q). Interplay between these modes may be responsible for the crossover observed in the dynamics from a solvent controlled to a vibrational controlled electron transfer. The following results have been obtained. (i) In the case of slowly relaxing solvents, the proximity of the point of excitation to an effective sink on the excited surface is critical in determining the decay of the reactant population. This is because the Franck-Condon overlap between the reactant ground and the product excited states decreases rapidly with increase in the quantum number of the product vibrational state. (ii) Non-exponential solvation dynamics has an important effect in determining the rates of electron transfer. Especially, a biphasic solvation and a large coupling between the reactant and the product states both may be needed to explain the experimental results. ©1996 American Institute of Physics

Electron-Beam-Induced Modifications in High-Density Polyethylene

Post-irradiation studies have been carried out to elucidate the effects of electron beam irradiation on the structural, optical, dielectric, and thermal properties of high-density polyethylene (HDPE) films. The experimental results showed that both the optical band gap and activation energy of HDPE films decreases with an increase in the doses of electron radiation. The electrical measurements showed that dielectric constant and the ac conductivity of HDPE increases with an increase in the dose of electron radiation. The thermal analysis carried out using DSC and TGA revealed that the melting temperature, degree of crystallinity, and thermal stability of the HDPE films increased, obviously, due to the predominant cross-linking reaction following high doses of electron irradiation.

High contrast imaging and thickness determination of graphene with in-column secondary electron microscopy

We report a new method for quantitative estimation of graphene layer thicknesses using high contrast imaging of graphene films on insulating substrates with a scanning electron microscope. By detecting the attenuation of secondary electrons emitted from the substrate with an in-column low-energy electron detector, we have achieved very high thickness-dependent contrast that allows quantitative estimation of thickness up to several graphene layers. The nanometer scale spatial resolution of the electron micrographs also allows a simple structural characterization scheme for graphene, which has been applied to identify faults, wrinkles, voids, and patches of multilayer growth in large-area chemical vapor deposited graphene. We have discussed the factors, such as differential surface charging and electron beam induced current, that affect the contrast of graphene images in detail. (C) 2011 American Institute of Physics. doi:10.1063/1.3608062]

Analytical Field-Effect Method for Extraction of Subgap States in Thin-Film Transistors

We present an analytical field-effect method to extract the density of subgap states (subgap DOS) in amorphous semiconductor thin-film transistors (TFTs), using a closed-form relationship between surface potential and gate voltage. By accounting the interface states in the subthreshold characteristics, the subgap DOS is retrieved, leading to a reasonably accurate description of field-effect mobility and its gate voltage dependence. The method proposed here is very useful not only in extracting device performance but also in physically based compact TFT modeling for circuit simulation.

Colossal nonsaturating linear magnetoresistance in two-dimensional electron systems at a GaAs/(Al,Ga)As heterointerface

Engineering devices with a large electrical response to magnetic field is of fundamental importance for a range of applications such as magnetic field sensing and magnetic read heads. We show that a colossal nonsaturating linear magnetoresistance (NLMR) arises in two-dimensional electron systems hosted in a GaAs/AlGaAs heterostructure in the strongly insulating regime. When operated at high source-drain bias, the magnetoresistance of our devices increases almost linearly with magnetic field, reaching nearly 10 000% at 8 T, thus surpassing many known nonmagnetic materials that exhibit giant NLMR. The temperature dependence and mobility analysis indicate that the NLMR has a purely classical origin, driven by nanoscale inhomogeneities. A large NLMR combined with small device dimensions makes these systems an attractive candidate for on-chip magnetic field sensing.

Influence of O-2 flow rate on HfO2 gate dielectrics for back-gated graphene transistors

HfO2 thin films deposited on Si substrate using electron beam evaporation, are evaluated for back-gated graphene transistors. The amount of O-2 flow rate, during vaporation is optimized for 35 nm thick HfO2 films, to achieve the best optical, chemical and electrical properties. It has been observed that with increasing oxygen flow rate, thickness of the films increased and refractive index decreased due to increase in porosity resulting from the scattering of the evaporant. The films deposited at low O-2 flow rates (1 and 3 SCCM) show better optical and compositional properties. The effects of post-deposition annealing and post-metallization annealing in forming gas ambience (FGA) on the optical and electrical properties of the films have been analyzed. The film deposited at 3 SCCM O-2 flow rate shows the best properties as measured on MOS capacitors. To evaluate the performance of device properties, back-gated bilayer graphene transistors on HfO2 films deposited at two O-2 flow rates of 3 and 20 SCCM have been fabricated and characterized. The transistor with HfO2 film deposited at 3 SCCM O-2 flow rate shows better electrical properties consistent with the observations on MOS capacitor structures. This suggests that an optimum oxygen pressure is necessary to get good quality films for high performance devices.