83 resultados para Naari ki parikalpana


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The dislocation mechanisms for plastic flow in quenched AlMg alloys with 0.45, 0.9, 2.7 and 6.4 at. % Mg were investigated using tensile tests and change-in-stress creep experiments in the temperaturhttp://eprints.iisc.ernet.in/cgi/users/home?screen=EPrint::Edit&eprintid=28109&stage=core#te range 87° -473° K. The higher the magnesium content in the alloy, the higher was the temperature dependence of flow stress. The alloys showed no perceptible creep in the vicinity of room temperature, while they crept at lower as well as higher temperatures. The most probable cause of hardening at temperatures below ∼ 200° K was found to be the pinning of dislocations by randomly distributed solute atoms, while athermal locking of dislocations by dynamic strain ageing during creep was responsible for the negligibly small creep rate in the room temperature range.

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Resistometric studies of isochronal and isothermal annealing of an Al-0.64 at.% Ag alloy have given a value of 0.13 ± 0.02 eV for the silver-vacancy binding energy and 0.55 ± 0.03 eV for the migration energy of solute atoms.

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The influence of 0.03 and 0.08 at. % Ag additions on the clustering of Zn atoms in an Al-4.4 at. % Zn alloy has been studied by resistometry. The effect of quenching and ageing temperatures shows that the ageing-ratio method of calculating the vacancy-solute atom binding energy is not applicable to these alloys. Zone-formation in Al-Zn is unaffected by Ag additions, but the zone-reversion process seems to be influenced. Apparent vacancy-formation energies in the binary and ternary alloys have been used to evaluate the v-Ag atom binding energy as 0.21 eV. It is proposed that, Ag and Zn being similar in size, the relative vacancy binding results from valency effects, and that in Al-Zn-Ag alloys clusters of Zn and Ag may form simultaneously, unaffected by the presence of each other. © 1970 Chapman and Hall Ltd.

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Low-temperature plastic flow in copper was investigated by studying its tensile and creep deformation characteristics. The dependence of the flow stress on temperature and strain rate was used to evaluate the thermal activation energy while the activation area was derived from the change-in-stress creep experiments. A value of 0.6 eV was obtained for the total obstacle energy both in electrolytic and commerical copper. The activation areas in copper of three selected purities fell in the range 1200 to 100 b2. A forest intersection mechanism seems to control the temperature dependent part of the flow stress. The increase in the athermal component of the flow stress with impurity content in copper is attributed to a change in the dislocation density. The investigation also revealed that thermal activation of some attractive junctions also takes place during low-temperature creep. The model of attractive junction formation on a stress decrement during creep, yields a value of 45±10 ergs cm-2 for the stacking fault energy in copper.

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Isochronal and isothermal ageing experiments have been carried out to determine the influence of 0.01 at. % addition of a second solute on the clustering rate in the quenched Al-4,4 a/o Zn alloy. The influence of quenching and ageing temperatures has been interpreted to obtain the apparent vacancy formation and vacancy migration energies in the various ternary alloys. Using a vacancy-aided clustering model the following values of binding free energy have been evaluated: Ce-0.18; Dy-0.24; Fe-0.18; Li-0.25; Mn-0.27; Nb-0.18; Pt-0.23; Sb-0.21; Si-0.30; Y-0.25; and Yb-0.23 (± 0.02 eV). These binding energy values refer to that between a solute atom and a single vacancy. The values of vacancy migration energy (c. 0.4 eV) and the experimental activation energy for solute diffusion (c. 1.1 eV) are unaffected by the presence of the ternary atoms in the Al-Zn alloy.

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The low-temperature plastic flow of alpha-zirconium was studied by employing constantrate tensile tests and differential-stress creep experiments. The activation parameters, enthalpy and area, have been obtained as a function of stress for pure, as well as commercial zirconium. The activation area is independent of grain size and purity and falls to about 9b2 at high stresses. The deformation mechanism below about 700° K is found to be controlled by a single thermally activated process, and not a two-stage activation mechanism. Several dislocation mechanisms are examined and it is concluded that overcoming the Peierls energy humps by the formation of kink pairs in a length of dislocation is the rate-controlling mechanism. The total energy needed to nucleate a double kink is about 0.8 eV in pure zirconium and 1 eV in commercial zirconium

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The slow reaction in an Al-5 wt.% Ag alloy has been investigated by resistivity measurements. The "slope change" method gave an activation energy of 1.25 eV for silver diffusion during the slow reaction. The existence of an excess concentration of vacancies in equilibrium with the dislocation loops seems to be responsible for the slow reaction. The presence of silver inhibits the nucleation of dislocation loops by holding up the quenched-in vacancies in solution. There is no indication of the presence of a third stage in the low-temperature ageing process of this alloy.

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The activation area and activation enthalpy are determined as a function of stress and temperature for alpha titanium. The results indicated that plastic flow below about 700°K occurs by a single thermally activated mechanism. Activation area determined by differential-stress creep tests falls in the range 80−8b2 and does not systematically depend on the impurity content. The total activation enthalpy derived from the temperature and strain-rate dependence of flow stress is 1.15 eV. The experimental data support a lattice hardening mechanism as controlling the low-temperature deformation in alpha titanium.

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The authors are grateful to Professor K. P. Abraham for the provision of facilities and encouragement. One of us (PRR) acknowledges the award of a National Associateship by the UGC which facilitated a short-time visit to the Indian Institute of Science.