407 resultados para ELECTRICAL TRANSPORT


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Cargo transport through the nuclear pore complex continues to be a subject of considerable interest to experimentalists and theorists alike. Several recent studies have revealed details of the process that have still to be fully understood, among them the apparent nonlinearity between cargo size and the pore crossing time, the skewed, asymmetric nature of the distribution of such crossing times, and the non-exponentiality in the decay profile of the dynamic autocorrelation function of cargo positions. In this paper, we show that a model of pore transport based on subdiffusive particle motion is in qualitative agreement with many of these observations. The model corresponds to a process of stochastic binding and release of the particle as it moves through the channel. It suggests that the phenylalanine-glycine repeat units that form an entangled polymer mesh across the channel may be involved in translocation, since these units have the potential to intermittently bind to hydrophobic receptor sites on the transporter protein. (C) 2011 American Institute of Physics. [doi:10.1063/1.3651100]

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An optimal composition of La0.67Cd0.33MnO3 was synthesized by ceramic route. The compound crystallized in a rhombohedral structure with lattice parameters a = 5.473(4) Å and α = 60°37′. Resistivity measurement showed an insulator-to-metal transition coupled with a ferromagnetic transition of around 255 K. Epitaxial thin films were fabricated on the LaAlO3 (100) substrate by a pulsed laser deposition technique. The psuedocubic lattice parameter a of the film is 3.873(4) Å. The insulator-to-metal transition of the film was observed at 250 K which is comparable with the bulk value. The film was ferromagnetic below this temperature. Magnetoresistance defined as ΔR/R0 = (RH−R0)/R0 was over −86% near the insulator-to-metal transition temperature of 240 K at 6 T magnetic field and over-30% at relatively low fields of 1 T. No magnetoresistance was observed at low temperatures in the film unlike in the polycrystalline sample, where about a 40% decrease in resistance was observed on applying 6 T magnetic field due to the spin dependent scattering at the grain boundaries.

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Radially-homogeneous and single-phase InAsxSb(1−x) crystals, up to 5.0 at. % As concentration, have been grown using the rotatory Bridgman method. Single crystallinity has been confirmed by x-ray and electron diffraction studies. Infrared transmission spectra show a continuous decrease in optical energy gap with the increase of arsenic content in InSb. The measured values of mobility and carrier density at room temperature (for x = .05) are 5.6×104 cm2/V s and 2.04×1016 cm−3, respectively.

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Transport and magnetic properties of flux-grown Nd1−xPbxMnO3 single crystals (x=0.15–0.5) are studied in the temperature range 300–77 K and 280–2 K, respectively. Magnetization measurements with a superconducting quantum interference device confirm a paramagnetic to ferromagnetic transition around 110, 121, 150, 160, and 178 K for x=0.15, 0.2, 0.3, 0.4, and 0.5, respectively. Four probe resistivity measurements at low temperatures show a monotonic increase for x=0.15 which represents a ferromagnetic insulating (FMI) phase. For Nd0.8Pb0.2MnO3 there is a slope change present in the resistivity profile at 127 K where metal to insulator transition (MI) sets in. For x=0.3 this MI transition is more prominent. However, both these samples have FMI phase at low temperature. When the concentration of lead increases (x>0.3) the sample displays a clear insulator to metal transition with a low temperature ferromagnetic metallic phase. On the basis of these measurements we have predicted the phase diagram of Nd1−xPbxMnO3. Magnetization measurements by a vibration sample magnetometer point out the appreciable differences between zero field cooled and field cooled profiles below the ferromagnetic to paramagnetic transition temperature for all x. These are indicative of magnetic frustration.

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An interesting topic for quite some time is an intermediate phase observed in chalcogenide glasses, which is related to network connectivity and rigidity. This phenomenon is exhibited by Si-Te-In glasses also. It has been addressed here by carrying out detailed thermal investigations by using Alternating Differential Scanning Calorimetry technique. An effort has also been made to determine the stability of these glasses using the data obtained from different thermodynamic quantities and crystallization kinetics of these glasses. Electrical switching behavior by recording I-V characteristics and variation of switching voltages with indium composition have been studied in these glasses for phase change memory applications. (C) 2011 Elsevier Inc. All rights reserved.

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Stoichiometric CrSi2 was prepared by arc melting and compacted by uniaxial hot pressing for property measurements. The crystal structure of CrSi2 was investigated using the powder x-ray diffraction method. From the Rietveld refinement, the lattice parameters were found to be a = 4.427 57 (7) and c = 6.368 04 (11) Å, respectively. The thermal expansion measurement revealed an anisotropic expansion in the temperature range from room temperature 800 K with αa = 14.58×10−6/K, αc = 7.51×10−6/K, and αV = 12.05×10−6/K. The volumetric thermal expansion coefficient shows an anomalous decrease in the temperature range of 450–600 K. The measured electrical resistivity ρ and thermoelectric power S have similar trends with a maxima around 550 K. Thermal conductivity measurements show a monotonic decrease with increasing temperature from a room temperature value of 10 W m−1 K−1. The ZT values increase with temperature and have a maximum value of 0.18 in the temperature range studied. An analysis of the electronic band structure is provided.

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Structural and electrical properties of Eu2O3 films grown on Si(100) in 500–600 °C temperature range by low pressure metalorganic chemical vapor deposition are reported. As-grown films also possess the impurity Eu1−xO phase, which has been removed upon annealing in O2 ambient. Film’s morphology comprises uniform spherical mounds (40–60 nm). Electrical properties of the films, as examined by capacitance-voltage measurements, exhibit fixed oxide charges in the range of −1.5×1011 to −6.0×1010 cm−2 and dielectric constant in the range of 8–23. Annealing has resulted in drastic improvement of their electrical properties. Effect of oxygen nonstoichiometry on the film’s property is briefly discussed.

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A system of transport equations have been obtained for plasma of electrons and having a background of positive ions in the presence of an electric and magnetic field. The starting kinetic equation is the well-known Landau kinetic equation. The distribution function of the kinetic equation has been expanded in powers of generalized Hermite polynomials and following Grad, a consistent set of transport equations have been obtained. The expressions for viscosity and heat conductivity have been deduced from the transport equation.

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The numerical solutions of Boltzmann transpott equation for the energy distribution of electrons moving in crossed fields in nitrogen have been obtained for 100 ÿ E/p ÿ 1000 V M-1 Torr-1 and for 0ÿ B/p ÿ 0.02 Tesla Torr-1 using the concept of energy dependent effective field intensity. From the derived distribution functions the electron mean energy, the tranaverse and perpendicular drift velocities and the averaged effective field intensity (Eavef) which signifies the average field intensity experienced by electron swarms in E àB field have been derived. The maximum difference between the electron mean energy for a given E ÃÂB field and that corresponding to Eavef/p (p is the gas pressure) is found to be within ñ3.5%.

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A method of evaluating the transient electrical response of a solion diode when excited by different current stimuli is given. This method is extended to obtain the transient response of the solion when connected in a circuit. To illustrate the utility of this method a circuit incorporating a solion diode has been analyzed.

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Sparking potentials have been measured in nitrogen and dry air between coaxial cylindrical electrodes for values of n = R2/R1 = approximately 1 to 30 (R1 = inner electrode radius, R2 = outer electrode radius) in the presence of crossed uniform magnetic fields. The magnetic flux density was varied from 0 to 3000 Gauss. It has been shown that the minimum sparking potentials in the presence of the crossed magnetic field can be evaluated on the basis of the equivalent pressure concept when the secondary ionization coefficient does not vary appreciably with B/p (B = magnetic flux density, p = gas pressure). The values of secondary ionization coefficients �¿B in nitrogen in crossed fields calculated from measured values of sparking potentials and Townsend ionization coefficients taken from the literature, have been reported. The calculated values of collision frequencies in nitrogen from minimum sparking potentials in crossed fields are found to increase with increasing B/p at constant E/pe (pe = equivalent pressure). Studies on the similarity relationship in crossed fields has shown that the similarity theorem is obeyed in dry air for both polarities of the central electrode in crossed fields.

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The composition, structural, electrical, and optical properties of as-grown and heat treated tin-mono-sulfide (SnS) ultra-thin films have been studied. The ultra-thin SnS films were prepared on glass substrates by thermal resistive evaporation technique. All the SnS films contained nanocrystallites and exhibited p-type conductivity with a low Hall-mobility, <50 cm(2)/Vs. All these films are highly tin rich in nature and exhibited orthorhombic crystal structure. As compared to other films, the SnS films annealed at 300 degrees C showed a low electrical resistivity of similar to 36 Omega cm with an optical band gap of similar to 1.98 eV. The observed electrical and optical properties of all the films are discussed based on their composition and structural parameters. These nanocrystalline ultra-thin SnS films could be expected as a buffer layer for the development of tandem solar cell devices due to their low-resistivity and high absorbability with an optimum band gap. (C) 2011 Elsevier B.V. All rights reserved.

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Electrical conductivity measurements show that Ln1-x Sr x CoO3, (Ln = Pr or Nd) undergoes a non-metal-metal transition when x≈0 3. The d.c. conductivity of compositions with 0transport at E c. All these transport properties suggest that Co4+ ions in Ln1-x Sr x CoO3 (0

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Bulk Ge15Te85−x In x (1 ≤ x ≤ 11) series of glasses have been found to exhibit a threshold switching behaviour for an input current of 2 mA. An initial decrease is seen in the switching voltages (V T) with the addition of indium, which is due to the higher metallicity of indium. An increase is seen in V T above 3 at.% of indium, which proceeds until 8 at.%, with a change in slope (lower to higher) seen around 7 at.%. Beyond x = 8, a reversal in trend is exhibited in the variation of V T, with a well-defined minimum around x = 9 at.%. Based on the composition dependence of V T, it is proposed that Ge15Te85−x In x glasses exhibit an extended rigidity percolation threshold. The composition, x = 3, at which the V T starts to increase and the composition, x = 7, at which a slope change is exhibited correspond to the onset and completion, respectively, of the extended stiffness transition. Thermal studies and photoconductivity measurements also support the idea of an extended rigidity percolation in Ge15Te85−x In x glasses. In addition, the minimum seen in V T at x = 9 is associated with the chemical threshold (CT) of this glassy system.

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Arteries are heterogeneous, composite structures that undergo large cyclic deformations during blood transport. Presence, build-up and consequent rupture of blockages in blood vessels, called atherosclerotic plaques, lead to disruption in the blood flow that can eventually be fatal. Abnormal lipid profile and hypertension are the main risk factors for plaque progression. Treatments span from pharmacological methods, to minimally invasive balloon angioplasty and stent procedures, and finally to surgical alternatives. There is a need to understand arterial disease progression and devise methods to detect, control, treat and manage arterial disease through early intervention. Local delivery through drug eluting stents also provide an attractive option for maintaining vessel integrity and restoring blood flow while releasing controlled amount of drug to reduce and alleviate symptoms. Development of drug eluting stents is hence interesting albeit challenging because it requires an integration of knowledge of mechanical properties with material transport of drug through the arterial wall to produce a desired biochemical effect. Although experimental models are useful in studying such complex multivariate phenomena, numerical models of mass transport in the vessel have proved immensely useful to understand and delineate complex interactions between chemical species, physical parameters and biological variables. The goals of this review are to summarize literature based on studies of mass transport involving low density lipoproteins in the arterial wall. We also discuss numerical models of drug elution from stents in layered and porous arterial walls that provide a unique platform that can be exploited for the design of novel drug eluting stents.