RCS ENHANCEMENT DUE TO BRAGG SCATTERING

With the advances of techniques for RCS reduction, it has become practical to develop aircraft which are invisible to modern day radars. In order to detect such low visible targets it is necessary to explore other phenomenon that contributes to the scattering of incident electromagnetic wave. It is well known from the developments from the clear air scattering using RASS induced acoustic wave could be used to create dielectric constant fluctuation. The scattering from these fluctuations rather than from the aircraft have been observed to enhance the RCS of clear air, under the condition when the incident EM wave is half of the acoustic wave, the condition of Bragg scattering would be met and RCS would be enhanced. For detecting low visibility targets which are at significant distance away from the main radar, inducement of EM fluctuation from acoustic source collocated with the acoustic source is infeasible. However the flow past aircraft produces acoustic disturbances around the aircraft can be exploited to detect low visibility targets. In this paper numerical simulation for RCS enhancement due to acoustic disturbances is presented. In effect, this requires the solution of scattering from 3D inhomogeneous complex shaped bodies. In this volume surface integral equation (VSIE) is used to compute the RCS from fluctuation introduced through the acoustic disturbances. Though the technique developed can be used to study the scattering from radars of any shape and acoustic disturbances of any shape. For illustrative condition, enhancement due to the Bragg scattering are shown to improve the RCS by nearly 30dB, for air synthetic sinusoidal acoustic variation profile for a spherical scattering volume

Interaction of CdSe and ZnO nanocrystals with electron-donor and -acceptor molecules

Interaction of CdSe and ZnO nanocrystals with electron-donating tetrathiafulvalene (TTF) and electron-withdrawing tetracyanoethylene (TCNE) has been investigated. Isothermal calorimetry shows CdSe nanocrystals interact more strongly with TCNE than TTF. Interaction of larger CdSe nanocrystals with TCNE causes a red-shift in the band-edge emission because of agglomeration, while the smaller CdSe nanocrystals, exhibiting stronger interaction with TCNE modify the optical gap of the nanocrystal. Luminescence of CdSe gets quenched sharply after addition of both TTF and TCNE. ZnO nanocrystals also exhibit luminescence quenching to lesser extent. Defect-emission of ZnO nanocrystals gets red or blue-shifted after interaction with TTF or TCNE respectively. (C) 2012 Elsevier B. V. All rights reserved.

Electron field emission from reduced graphene oxide on polymer film

Field emission of reduced graphene oxide coated on polystyrene film is studied in both parallel and perpendicular configurations. Low turn-on field of 0.6 V/lm and high emission current density of 200 mA/cm(2) are observed in perpendicular configuration (along the cross section), whereas a turn-on field of 6 V/lm and current density of 20 mu A/cm(2) are obtained in parallel configuration (top surface). The emission characteristics follow Fowler-Nordheim (FN) tunneling and the values of enhancement factor estimated from FN plots are 5818 (perpendicular) and 741 (parallel). Furthermore, stability and repeatability of the field emission characteristics in perpendicular configuration are presented. (C) 2013 American Institute of Physics. http://dx.doi.org/10.1063/1.4788738]

Layer-dependent resonant Raman scattering of a few layer MoS2

We report resonant Raman scattering of MoS2 layers comprising of single, bi, four and seven layers, showing a strong dependence on the layer thickness. Indirect band gap MoS2 in bulk becomes a direct band gap semiconductor in the monolayer form. New Raman modes are seen in the spectra of single- and few-layer MoS2 samples which are absent in the bulk. The Raman mode at similar to 230 cm(-1) appears for two, four and seven layers. This mode has been attributed to the longitudinal acoustic phonon branch at the M point (LA(M)) of the Brillouin zone. The mode at similar to 179 cm(-1) shows asymmetric character for a few-layer sample. The asymmetry is explained by the dispersion of the LA(M) branch along the G-M direction. The most intense spectral region near 455 cm(-1) shows a layer-dependent variation of peak positions and relative intensities. The high energy region between 510 and 645 cm(-1) is marked by the appearance of prominent new Raman bands, varying in intensity with layer numbers. Resonant Raman spectroscopy thus serves as a promising non invasive technique to accurately estimate the thickness of MoS2 layers down to a few atoms thick. Copyright (C) 2012 John Wiley & Sons, Ltd.

Optical Properties of 1P State Electron Bubbles in Liquid Helium-4

When an electron is injected into liquid helium, it forces open a cavity that is free of helium atoms (an electron bubble). If the electron is in the ground 1S state, this bubble is spherical. By optical pumping it is possible to excite a significant fraction of the electron bubbles to the 1P state; the bubbles then lose spherical symmetry. We present calculations of the energies of photons that are needed to excite these 1P bubbles to higher energy states (1D and 2S) and the matrix elements for these transitions. Measurement of these transition energies would provide detailed information about the shape of the 1P bubbles.

Magnetization in electron- and Mn- doped SrTiO3

Mn- doped SrTiO3.0, when synthesized free of impurities, is a paramagnetic insulator with interesting dielectric properties. Since delocalized charge carriers are known to promote ferromagnetism in a large number of systems via diverse mechanisms, we have looked for the possibility of any intrinsic, spontaneous magnetization by simultaneous doping of Mn ions and electrons into SrTiO3 via oxygen vacancies, thereby forming SrTi1-xMnxO3-delta, to the extent of making the doped system metallic. We find an absence of any enhancement of the magnetization in the metallic sample when compared with a similarly prepared Mn doped, however, insulating sample. Our results, thus, are not in agreement with a recent observation of a weak ferromagnetism in metallic Mn doped SrTiO3 system.

k.p based closed form energy band gap and transport electron effective mass model for 100] and 110] relaxed and strained Silicon nanowire

In this paper, we address a physics based closed form model for the energy band gap (E-g) and the transport electron effective mass in relaxed and strained 100] and 110] oriented rectangular Silicon Nanowire (SiNW). Our proposed analytical model along 100] and 110] directions are based on the k.p formalism of the conduction band energy dispersion relation through an appropriate rotation of the Hamiltonian of the electrons in the bulk crystal along 001] direction followed by the inclusion of a 4 x 4 Luttinger Hamiltonian for the description of the valance band structure. Using this, we demonstrate the variation in Eg and the transport electron effective mass as function of the cross-sectional dimensions in a relaxed 100] and 110] oriented SiNW. The behaviour of these two parameters in 100] oriented SiNW has further been studied with the inclusion of a uniaxial strain along the transport direction and a biaxial strain, which is assumed to be decomposed from a hydrostatic deformation along 001] with the former one. In addition, the energy band gap and the effective mass of a strained 110] oriented SiNW has also been formulated. Using this, we compare our analytical model with that of the extracted data using the nearest neighbour empirical tight binding sp(3)d(5)s* method based simulations and has been found to agree well over a wide range of device dimensions and applied strain. (C) 2012 Elsevier Ltd. All rights reserved.

Electron rich supramolecular polymers as fluorescent sensors for nitroaromatics

Three pi-electron rich fluorescent supramolecular polymers (1-3) have been synthesized incorporating 2-methyl-3-butyn-2-ol groups in reasonable yield by employing Sonagashira coupling. They were characterized by multinuclear NMR (H-1, C-13), ESI-MS and single crystal X-ray diffraction analyses 1 = 1( 2-methyl-3-butyn-2-ol) pyrene; 2 = 9,10-bis(2-methyl-3-butyn-2-ol) anthracene; 3 = 1,3,6,8-tetrakis(2methyl- 3-butyn-2-ol) pyrene]. Single crystal structures of 1-3 indicated that the incorporation of hydroxy (-OH) groups on the peripheral of the fluorophores helps them to self-associate into an infinite supramolecular polymeric network via intermolecular hydrogen bonding interactions between the adjacent discrete fluorophore units. All these compounds showed fluorescence characteristics in chloroform solution due to the extended pi-conjugation and were used as selective fluorescent sensors for the detection of electron deficient nitroaromatics. The changes in photophysical properties of fluorophores (1-3) upon complex formation with electron deficient nitroaromatic explosives were studied in chloroform solution by using fluorescence spectroscopy. All these fluorophores showed the largest quenching response with moderate selectivity for nitroaromatics over various other electron deficient/ rich aromatic compounds tested (Chart 1). Analysis of the fluorescence titration profile of 9,10-bis(2-methyl-3butyn- 2-ol) anthracene fluorophore (2) with 1,3,5-trinitrotoluene/ 2,4-dinitrotoluene provided evidence that this particular fluorophore detects nitroaromatics in the nanomolar range 2.0 ppb for TNT, 13.7 ppb for DNT]. Moreover, sharp visual color change was observed upon mixing nitroaromatic (DNT) with fluorophores (1-3) both in solution as well as in solid phase. Furthermore, the vapor-phase sensing study of thin film of fluorophores (1-3) showed efficient quenching responses for DNT and this sensing process is reproducible. Selective fluorescence quenching response including a sharp visual color change for nitroaromatics make these tested fluorophores (1-3) as potential sensors for nitroaromatic compounds with a detection limit of ppb level.

Thermoelectric properties of PbTe with encapsulated bismuth secondary phase

Lead Telluride (PbTe) with bismuth secondary phase embedded in the bulk has been prepared by matrix encapsulation technique. X-Ray Diffraction results indicated crystalline PbTe, while Rietveld analysis showed that Bi did not substitute at either Pb or Te site, which was further confirmed by Raman and X-Ray Photoelectron Spectroscopy. Scanning Electron Microscopy showed the expected presence of a secondary phase, while Energy Dispersive Spectroscopy results showed a slight deficiency of tellurium in the PbTe matrix, which might have occurred during synthesis due to higher vapor pressure of Te. Transmission Electron Microscopy results did not show any nanometer sized Bi phase. Seebeck coefficient (S) and electrical conductivity (sigma) were measured from room temperature to 725 K. A decrease in S and sigma with increasing Bi content showed an increased scattering of electrons from PbTe-Bi interfaces, along with a possible electron acceptor role of Bi secondary phase. An overall decrease in the power factor was thus observed. Thermal conductivity, measured from 400K to 725K, was smaller at starting temperature with increasing Bi concentration, and almost comparable to that of PbTe at higher temperatures, indicating a more important role of electrons as compared to phonons at PbTe-Bi interfaces. Still, a reasonable zT of 0.8 at 725K was achieved for undoped PbTe, but no improvement was found for bismuth added samples with micrometer inclusions. (C) 2013 American Institute of Physics. http://dx.doi.org/10.1063/1.4796148]

Electron irradiation effects on TGA-capped CdTe quantum dots

8MeV electron irradiation effects on thioglycolic acid (TGA)-capped CdTe quantum dots (QD) are discussed in this study. CdTe QDs were characterized using x-ray diffraction (XRD), transmission electron microscope (TEM) and x-ray photoelectron spectroscopy (XPS). Steady-state and time-resolved emission spectroscopy and UV-visible absorption spectroscopy were performed before and after irradiation with 8MeV electrons. XRD and TEM confirm the growth of TGA-capped CdTe QDs. The photoemission wavelength, intensity and lifetimes were found to vary with electron dose. At lower doses, they were found to be increasing (red-shift of photoluminescence (PL) peak and intensity) while the intensity decreased at higher electron doses. The observed changes in PL property, XPS and XRD analysis suggest possible epitaxial growth of the CdS shell on the CdTe core. This work demonstrates electron beam induced formation of the CdS layer on the CdTe core, which is a key step towards growth of the water soluble CdTe/CdS core-shell structure for biomedical labelling applications.

Low temperature growth of SnO2 nanowires by electron beam evaporation and their application in UV light detection

For the first time, high quality tin oxide (SnO2) nanowires have been synthesized at a low substrate temperature of 450 degrees C via vapor-liquid-solid mechanism using an electron beam evaporation technique. The grown nanowires have shown length of 2-4 mu m and diameter of 20-60 nm. High resolution transmission electron microscope studies on the grown nanowires have shown the single crystalline nature of the SnO2 nanowires. We investigated the effect of growth temperature and oxygen partial pressure on SnO2 nanowires growth. Variation of substrate temperature at a constant oxygen partial pressure of 4 x 10(-4) mbar suggested that a temperature equal to or greater than 450 degrees C was the best condition for phase pure SnO2 nanowires growth. The SnO2 nanowires grown on a SiO2 substrate were subjected to UV photo detection. The responsivity and quantum efficiency of SnO2 NWs photo detector (at 10V applied bias) was 12 A/W and 45, respectively, for 12 mu W/cm(2) UV lamp (330 nm) intensity on the photo detector.

Evidence of novel quasiparticles in a strongly interacting two-dimensional electron system: giant thermopower and metallic behaviour

We report thermopower (S) and electrical resistivity (rho (2DES) ) measurements in low-density (10(14) m(-2)), mesoscopic two-dimensional electron systems (2DESs) in GaAs/AlGaAs heterostructures at sub-Kelvin temperatures. We observe at temperatures a parts per thousand(2)0.7 K a linearly growing S as a function of temperature indicating metal-like behaviour. Interestingly this metallicity is not Drude-like, showing several unusual characteristics: (i) the magnitude of S exceeds the Mott prediction valid for non-interacting metallic 2DESs at similar carrier densities by over two orders of magnitude; and (ii) rho (2DES) in this regime is two orders of magnitude greater than the quantum of resistance h/e (2) and shows very little temperature-dependence. We provide evidence suggesting that these observations arise due to the formation of novel quasiparticles in the 2DES that are not electron-like. Finally, rho (2DES) and S show an intriguing decoupling in their density-dependence, the latter showing striking oscillations and even sign changes that are completely absent in the resistivity.

Dependence of electron recombination time and light to electricity conversion efficiency on shape of the nanocrystal light sensitizer

Tunability of electron recombination time and light to electricity conversion efficiency to superior values in semiconductor sensitized solar cells via optimized design of nanocrystal light sensitizer shape is discussed here.

Scattering of carriers by charged dislocations in semiconductors

The scattering of carriers by charged dislocations in semiconductors is studied within the framework of the linearized Boltzmann transport theory with an emphasis on examining consequences of the extreme anisotropy of the cylindrically symmetric scattering potential. A new closed-form approximate expression for the carrier mobility valid for all temperatures is proposed. The ratios of quantum and transport scattering times are evaluated after averaging over the anisotropy in the relaxation time. The value of the Hall scattering factor computed for charged dislocation scattering indicates that there may be a factor of two error in the experimental mobility estimates using the Hall data. An expression for the resistivity tensor when the dislocations are tilted with respect to the plane of transport is derived. Finally, an expression for the isotropic relaxation time is derived when the dislocations are located within the sample with a uniform angular distribution.

Growth of Germanium Nanowires by electron beam evaporation

Growth of high density germanium nanowires on Si substrates by electron beam evaporation (EBE) has been demonstrated using gold as catalyst. The germanium atoms are provided by evaporating germanium by electron beam evaporation (EBE) technique. Effect of substrate (growth) temperature and deposition time on the growth of nanowires has studied. The morphology of the nanowires was investigated by field emission scanning electron microscope (FESEM). It has been observed that a narrow temperature window from 380 degrees C to 480 degrees C is good for the nanowires growth as well as restriction on the maximum length of nanowires. It is also observed that high substrate temperature leading to the completely absence of nanowire growth.