93 resultados para single-frequency fiber amplifier


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In this paper we report resonance Raman scattering from graphite covering excitation energies in the range 2.4 eV to 6 eV. The Raman excitation profile shows a maximum at 4.94 eV (lambda = 251nm) for the G - band (1582 cm(-1)). The D-band at similar to 1350 cm(-1), attributed to disorder activated Raman scattering, does not show up in Raman spectra recorded with excitation wavelengths smaller than 257.3 nm, revealing that the resonance enhancements of the G and D-modes are widely different. Earlier Raman measurements in carbon materials have also revealed a very large and unusual dependence of the D - mode frequency on excitation laser wavelength. This phenomenon is also observed in carbon nanotubes. In this paper we show for the first time that the above unusual dependence arises from the disorder - induced double resonance mechanism.

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Micro- and nano-mechanical resonators have been proposed for a variety of applications ranging from mass sensing to signal processing. Often their actuation and/or detection involve external subsystems that are much larger than the resonator itself. We have designed a simple microcantilever resonator with integrated sensor and actuator, facilitating the integration of large arrays of resonators. This unique design can be manufactured with a low-cost fabrication process, involving just a single step of lithography. The bilayer cantilever of gold and silicon dioxide is used as piezoresistive sensor as well as thermal bimorph actuator. The ac current used for actuation and the dc current used for piezoresistive detection are separated in the frequency-domain using a bias-tee circuit configuration. The resonant response is measured by detecting the second harmonic of the actuation current using a lock-in amplifier.

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In this paper we show a novel chemo-mechanical-optical sensing mechanism in single and multi-layer hydrogel coated Fiber Bragg Grating (FBG) and demonstrate specific application in pH activated processes. The sensing device is based on the ionizable monomers inside the hydrogel which reversibly dissociates as a function of the pH and consequently resulting in osmotic pressure difference between the gel and the solution. This pressure gradient causes the hydrogel to deform which in turn induces secondary strain on the FBG sensor resulting in shift in the Bragg wavelength. We also report on the sensitivity factor of single and multilayer hydrogel coated FBG at various different pH.

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This study presents a topology for a single-phase pulse-width modulation (PWM) converter which achieves low-frequency ripple reduction in the dc bus even when there are grid frequency variations. A hybrid filter is introduced to absorb the low-frequency current ripple in the dc bus. The control strategy for the proposed filter does not require the measurement of the dc bus ripple current. The design criteria for selecting the filter components are also presented in this study. The effectiveness of the proposed circuit has been tested and validated experimentally. A smaller dc-link capacitor is sufficient to keep the low-frequency bus ripple to an acceptable range in the proposed topology.

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In order to understand the role of translational modes in the orientational relaxation in dense dipolar liquids, we have carried out a computer ''experiment'' where a random dipolar lattice was generated by quenching only the translational motion of the molecules of an equilibrated dipolar liquid. The lattice so generated was orientationally disordered and positionally random. The detailed study of orientational relaxation in this random dipolar lattice revealed interesting differences from those of the corresponding dipolar liquid. In particular, we found that the relaxation of the collective orientational correlation functions at the intermediate wave numbers was markedly slower at the long times for the random lattice than that of the liquid. This verified the important role of the translational modes in this regime, as predicted recently by the molecular theories. The single-particle orientational correlation functions of the random lattice also decayed significantly slowly at long times, compared to those of the dipolar liquid.

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We have studied the low magnetic field high temperature region of the H-T phase diagram of Bi2Sr2CaCu2O8 single crystals using the technique of non-resonant rf response at a frequency of 20 MHz. With H(rf)parallel to a, H parallel to c, the isothermal magnetic field scans below T-c show that the frequency f(H) of the tank circuit decreases continuously with increase in H before saturating at H similar to H-D(T). Such a decrease in f(H) reflects increasing rf penetration into the weakly screened region between CuO bilayers. The saturation of f(H) at its lowest value for H similar to H-D(T) indicates complete rf penetration land hence the disappearance of field dependence) due to the vanishing of the screening rf currents I-rf(c) in those regions or equivalently when the phase coherence between adjacent superconducting layers vanishes. Therefore H,(T) represents the decoupling of the adjacent superconducting bilayers, and hence also a 3D to 2D decoupling transition of the vortex structure. Simultaneous monitoring of the field dependent rf power dissipation P(H) shows a maximum in dP/dH at H-D(T). The observed H-D(T) line in many crystals is in excellent agreement with the (l/t-1) behavior proposed for decoupling.

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In situ Raman experiments together with transport measurements have been carried out in single-walled carbon nanotubes as a function of electrochemical top gate voltage (Vg). We have used the green laser (EL=2.41 eV), where the semiconducting nanotubes of diameter ~1.4 nm are in resonance condition. In semiconducting nanotubes, the G−- and G+-mode frequencies increase by ~10 cm−1 for hole doping, the frequency shift of the G− mode is larger compared to the G+ mode at the same gate voltage. However, for electron doping the shifts are much smaller: G− upshifts by only ~2 cm−1 whereas the G+ does not shift. The transport measurements are used to quantify the Fermi-energy shift (EF) as a function of the gate voltage. The electron-hole asymmetry in G− and G+ modes is quantitatively explained using nonadiabatic effects together with lattice relaxation contribution. The electron-phonon coupling matrix elements of transverse-optic (G−) and longitudinal-optic (G+) modes explain why the G− mode is more blueshifted compared to the G+ mode at the same Vg. The D and 2D bands have different doping dependence compared to the G+ and G− bands. There is a large downshift in the frequency of the 2D band (~18 cm−1) and D (~10 cm−1) band for electron doping, whereas the 2D band remains constant for the hole doping but D upshifts by ~8 cm−1. The doping dependence of the overtone of the G bands (2G bands) shows behavior similar to the dependence of the G+ and G− bands.

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A finite gain differential amplifier is used along with a few passive RC elements to simulate an inductor. Methods for obtaining low Q inductance and frequency dependent high QI inductance are described. Sensitivity analysis when the gain varies is also included.

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The deviation in the performance of active networks due to practical operational amplifiers (OA) is mainly because of the finite gain bandwidth productBand nonzero output resistanceR_0. The effect ofBandR_0on two OA impedances and single and multi-OA filters are discussed. In filters, the effect ofR_0is to add zeros to the transfer function often making it nonminimum phase. A simple method of analysis has been suggested for 3-OA biquad and coupled biquad circuits. A general method of noise minimization of the generalized impedance converter (GIC), while operating OA's within the prescribed voltage and current limits, is also discussed. The 3-OA biquadratic sections analyzed also exhibit noise behavior and signal handling capacity similar to the GIC. The GIC based structures are found to be better than other configurations both in biquadratic sections and direct realizations of higher order transfer functions.

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A vibration isolator is described which incorporates a near-zero-spring-rate device within its operating range. The device is an assembly of a vertical spring in parallel with two inclined springs. A low spring rate is achieved by combining the equivalent stiffness in the vertical direction of the inclined springs with the stiffness of the vertical central spring. It is shown that there is a relation between the geometry and the stiffness of the individual springs that results in a low spring rate. Computer simulation studies of a single-degree-of-freedom model for harmonic base input show that the performance of the proposed scheme is superior to that of the passive schemes with linear springs and skyhook damping configuration. The response curves show that, for small to large amplitudes of base disturbance, the system goes into resonance at low frequencies of excitation. Thus, it is possible to achieve very good isolation over a wide low-frequency band. Also, the damper force requirements for the proposed scheme are much lower than for the damper force of a skyhook configuration or a conventional linear spring with a semi-active damper.

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In this paper, a new technique is presented to increase the bandwidth for a single stage amplifier. Usually, -3 dB bandwidth of single stage amplifier is in few MHz. High output impedance and subsequent capacitive loading decrease the bandwidth of amplifier. The presented technique uses a load which itself acts as bandwidth enhancer. This high speed amplifier is designed on 180 nm CMOS technology, operates at 2.5 V power supply. This amplifier is succeeded by an output buffer to achieve a better linearity, high output swing and required output impedance for matching.

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Synchronization issues pose a big challenge in cooperative communications. The benefits of cooperative diversity could be easily undone by improper synchronization. The problem arises because it would be difficult, from a complexity perspective, for multiple transmitting nodes to synchronize to a single receiver. For OFDM based systems, loss of performance due to imperfect carrier synchronization is severe, since it results in inter-carrier interference (ICI). The use of space-time/space-frequency codes from orthogonal designs are attractive for cooperative encoding. But orthogonal designs suffer from inter-symbol interference (ISI) due to the violation of quasi-static assumption, which can arise due to frequency- or time-selectivity of the channel. In this paper, we are concerned with combating the effects of i) ICI induced by carrier frequency offsets (CFO), and ii) ISI induced by frequency selectivity of the channel, in a cooperative communication scheme using space-frequency block coded (SFBC) OFDM. Specifically, we present an iterative interference cancellation (IC) algorithm to combat the ISI and ICI effects. The proposed algorithm could be applied to any orthogonal or quasi-orthogonal designs in cooperative SFBC OFDM schemes.

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Frequency multiplication (FM) can be used to design low power frequency synthesizers. This is achieved by running the VCO at a much reduced frequency, while employing a power efficient frequency multiplier, and also thereby eliminating the first few dividers. Quadrature signals can be generated by frequency- multiplying low frequency I/Q signals, however this also multiplies the quadrature error of these signals. Another way is generating additional edges from the low-frequency oscillator (LFO) and develop a quadrature FM. This makes the I-Q precision heavily dependent on process mismatches in the ring oscillator. In this paper we examine the use of fewer edges from LFO and a single stage polyphase filter to generate approximate quadrature signals, which is then followed by an injection-locked quadrature VCO to generate high- precision I/Q signals. Simulation comparisons with the existing approach shows that the proposed method offers very good phase accuracy of 0.5deg with only a modest increase in power dissipation for 2.4 GHz IEEE 802.15.4 standard using UMC 0.13 mum RFCMOS technology.

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A simple, low-cost, constant frequency, analog controller is proposed for the front-end half-bridge rectifier of a single-phase transformerless UPS system to maintain near unity power factor at the input and zero dc-offset voltage at the output. The controller generates the required gating pulses by comparing the input current with a periodic, bipolar, linear carrier without sensing the input voltage. Two voltage controllers and a single integrator with reset are used to generate the required carrier. All the necessary control operations can be performed without using any PLL, multiplier and/or divider. The controller can be fabricated as a single integrated circuit. The control concept is validated through simulation and also experimentally on an 800W half-bridge rectifier. Experimental results are presented for ac-dc application, and also for ac-dc-ac UPS application with both sinusoidal and nonlinear loads. The simulation and experimental results agree well.