Photocatalytic Activity of Microwave Plasma-Synthesized TiO2 Nanopowder

Nanocrystalline TiO2 was synthesized using the microwave plasma technique and characterized using X-ray diffraction, transmission electron microscopy, scanning electron microscopy, laser particle size analyzer, UV-vis spectroscopy and BET surface area analyzer. The synthesized TiO2 powder crystallized in anatase phase and the crystallite sizes were in nanometers. The photocatalytic activity of the compound was determined and compared against the activity of the commercial Degussa P-25 TiO2 catalyst. The degradation rates of the dyes were found to be higher over the synthesized TiO2 as compared to that over commercial Degussa P-25 TiO2.

Non-resonant microwave absorption evidence for intrinsic Josephson coupling in Tl2Ba2CaCu2O8 single crystals

We report the results of our non-resonant microwave absorption (NRMA) studies on single crystals of Tl2Ba2CaCu2O8 (Tl 2212) which reflect the occurrence of intrinsic Josephson coupling in these crystals. We have studied the magnetic field induced microwave absorption at various temperatures from 4.2K to T-c (similar to 104K) using a standard CW EPR spectrometer (H-dc parallel to c). We observe the appearance of a characteristic feature in the NRMA signals similar to the ones observed earlier by us in Bi2Sr2CaCu2O8 (Bi 2212) starting a few degrees below T-c, which on cooling passes through a maximum in intensity before disappearing at a further low temperature. This behaviour is attributed to the appearance, strengthening and disappearance of Josephson response consequent to the temperature dependence of the viscosity of the Josephson medium between the CuO2 superconducting sheets.

Al/SiC carriers for microwave integrated circuits by a new technique of pressureless infiltration

Materials with high thermal conductivity and thermal expansion coefficient matching with that of Si or GaAs are being used for packaging high density microcircuits due to their ability of faster heat dissipation. Al/SiC is gaining wide acceptance as electronic packaging material due to the fact that its thermal expansion coefficient can be tailored to match with that of Si or GaAs by varying the Al:SiC ratio while maintaining the thermal conductivity more or less the same. In the present work, Al/SiC microwave integrated circuit (MIC) carriers have been fabricated by pressureless infiltration of Al-alloy into porous SiC preforms in air. This new technique provides a cheaper alternative to pressure infiltration or pressureless infiltration in nitrogen in producing Al/SiC composites for electronic packaging applications. Al-alloy/65vol% SiC composite exhibited a coefficient of thermal expansion of 7 x 10(-6) K-1 (25 degrees C-100 degrees C) and a thermal conductivity of 147 Wm(-1) K-1 at 30 degrees C. The hysteresis observed in thermal expansion coefficient of the composite in the temperature range 100 degrees C-400 degrees C has been attributed to the presence of thermal residual stresses in the composite. Thermal diffusivity of the composite measured over the temperature range from 30 degrees C to 400 degrees C showed a 55% decrease in thermal diffusivity with temperature. Such a large decrease in thermal diffusivity with temperature could be due to the presence of micropores, microcracks, and decohesion of the Al/SiC interfaces in the microstructure (all formed during cooling from the processing temperature). The carrier showed satisfactory performance after integrating it into a MIC.

Microwave irradiation-assisted method for the deposition of adherent oxide films on semiconducting and dielectric substrates

We report a method for the deposition of thin films and thick coatings of metal oxides through the liquid medium, involving the micro waveirradiation of a solution of a metal-organic complex in a suitable dielectric solvent. The process is a combination of sol-gel and dip-coating methods, wherein coatings can be obtained on nonconducting and semiconducting substrates, within a few minutes. Thin films of nanostructured ZnO (wurtzite) have been obtained on Si(100), glass and polymer substrates, the nanostructure determined by process parameters The coatings are strongly adherent and uniform over 15 mm x 15 mm, the growth rate similar to 0.25 mu m/min Coatings of nanocrystalline Fe2O3 and Ga2O3 have also been obtained The method is scalable to larger substrates, and is promising as a low temperature technique for coating dielectric substrates, including flexible polymers. (C) 2010 Elsevier B.V. All rights reserved.

Microwave driven hydrothermal synthesis of LiMn2O4 nanoparticles as cathode material for Li-ion batteries

Among the various cathode materials studied for Li-ion batteries over the past many years, spinet LiMn2O4 is found to be one of the most attractive materials. Nanoparticles of the electrode materials sustain high rate capability due to large surface to volume ratio and small diffusion path length. Nanoparticles of spinel LiMn2O4 have been synthesized by microwave hydrothermal technique using prior synthesized amorphous MnO2 and LiOH. The phase and purity of spinel LiMn2O4 are confirmed by powder X-ray diffraction. The morphological studies have been investigated using field emission scanning electron microscopy and high-resolution transmission electron microscopy. The electrochemical performances of the material for Li insertion/extraction are evaluated by cyclic voltammetry, galvanostatic charge-discharge cycling and AC impedance studies. The initial discharge capacity is found to be about 89 mAh g(-1) at current density of 21 mA g(-1). (C) 2010 Elsevier B.V. All rights reserved.

Microwave Assisted Synthesis of Nanostructured Titanium Dioxide with High Photocatalytic Activity

TiO2 (anatase) was synthesized using a microwave-irradiation-assisted chemical method. The reaction conditions were varied to obtain unique nanostructures of TiO2 comprising nanometric spheres giving the materials a very porous morphology. The oxide was characterized by X-ray diffraction (XRD), Raman spectroscopy, transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) spectroscopy, and thermogravimetric analysis (TGA). The specific surface area and porosity were quantified by the BET method, and the degradation of dyes was carried out using these materials. The photocatalytic activity of the nanometric TiO2 was significantly higher than that of commercially available TiO2 (Degussa P25) for the degradation of the dyes.

Thin film amorphous semiconductor microwave switches

Microwave switches operating in the X band were designed and fabricated using amorphous chalcogenide semiconductors of composition GexTeyAsz. Threshold devices were shown to operate as microwave modulators at modulation frequencies of up to 100 MHz. No delay time was observed at the highest frequency although the modulation efficiency decreased above 10 MHz owing to the finite recovery time which was approximately 0.3 × 10−8s. The devices can also be used as variolossers, the insertion loss being 0.5 dB in the OFF state and increasing on switching from 5 dB at 1 mA device current to 18 dB at 100 mA.The behaviour of the threshold switches can be explained in terms of the formation of a conducting filament in the ON state with a constant current density of 2 × 104Acm−2 that is shunted by the device capacitance. The OFF state conductivity σ varies as ωn (0.5 < n < 1) which is characteristic of hopping in localized states. However, there was evidence of a decrease in n or a saturation of the conductivity at high frequencies.As a result of phase separation memory switches require no holding current in the ON state and may be used as novel latching semiconductor phase-shifters.

Comparison of the effect of processing parameters and degradation on the DC and microwave properties of thin films and polycrystalline bulk high-Tc superconducting materials

The sharp increase in microwave power loss (the reverse of what has previously been reported) at the transition temperature in high-Tc superconducting systems such as YBaCu oxide (polycrystalline bulk and thin films obtained by the laser ablation technique) and BiPbSrCaCu oxide is reported. The differences between DC resistivity ( rho ) and the microwave power loss (related to microwave surface resistance) are analysed from the data obtained by a simultaneous measurement set-up. The influence of various parameters, such as preparation conditions, thickness and aging of the sample and the probing frequency (6-18 GHz), on the variation of microwave power loss with temperature is outlined.

Microwave Irradiation Assisted Method for the Rapid Synthesis of fine Particles of alpha Al2O3 And alpha (Al1-XCrx)(2)O-3 And Their Coatings on Si(100)

Chromium substituted beta diketonate complexes of aluminium have been synthesized and employed as precursors for a novel soft chemistry process wherein microwave irradiation of a solution of the complex yields within minutes well crystallized needles of alpha (Al1 XCrx)(2)O-3 measuring 20 30 nm in diameter and 50 nm long By varying the microwave irradiation parameters and using a surfactant such as polyvinyl pyrrolidone the crystallite size and shape can be controlled and their agglomeration prevented These microstructural parameters as well as the polymorph of the Cr substituted Al2O3 formed may also be controlled by employing a different complex Samples of alpha (Al1 XCrx)(2)O-3 have been characterized by XRD FTIR and TEM The technique results in material of homogeneous metal composition, as shown by EDAX and can be adjusted as desired The technique has been extended to obtain coatings of alpha (Al1 XCrx)(2)O-3 on Si(100)

Multilayer Bi1.5Zn1.0Nb1.5O7/Ba0.6Sr0.4TiO3/Bi1.5Zn1.0Nb1.5O7 thin films for tunable microwave applications

Bi1.5Zn1.0Nb1.5O7/Ba0.6Sr0.4TiO3/Bi1.5Zn1.0Nb1.5O7 tunable multilayer thin film has been fabricated by pulsed laser ablation and characterized. Phase composition and microstructure of multilayer films were characterized by X-ray diffraction, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The film has very smooth surface with RMS roughness of 1.5-2nm and grain size of 100-150 nm. Total film thickness has been measure to be 375 nm. The BZN thin films at 300 K, on Pt(1 1 1)/SiO2/Si substrate showed zero-field dielectric constant of 105 and dielectric loss tangent of 0.002 at frequency of 0.1 MHz. Thin films annealed at 700 degrees C shows the dielectric tunability of 18% with biasing field 500 kV/cm at 0.1 MHz. The multilayer thin film shows nonferroelectric behavior at room temperature. The good physical and electrical properties of multilayer thin films make them promising candidate for tunable microwave device applications. (C) 2010 Elsevier B.V. All rights reserved.

Non-resonant RF and microwave response: A novel technique for the characterization of superconducting materials

When examined using continuous wave electron paramagnetic resonance and nuclear magnetic resonance spectrometers, the high T-c superconductors give rise to intense, low field, 'non-resonant' absorption signals in the superconducting state. This phenomenon can be used as a highly sensitive, contactless technique for the detection and characterization of superconductivity even in samples containing only minute amounts of the superconducting phase. Further, it can also be applied to the determination of material parameters of interest such as J(c) and H-c2 in addition to being a powerful way of distinguishing between weak-link superconductivity and bulk superconductivity. The details of these aspects are discussed

Surface barrier effects in non-resonant microwave absorption by superconducting thin films of YBa2Cu3O7??

We present an unusual temperature dependence of hysteresis in the Lion resonant microwave absorption (NRMA) signals from superconducting thin films of YBa2Cu3O7-delta. We observe that the hysteresis increases with increase in temperature till T-c which we interpret as evidence for the presence of Bean-Livingston surface barriers (BLSB) in the single crystalline films.