183 resultados para capacitance


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In space application the precision level measurement of cryogenic liquids in the storage tanks is done using triple redundant capacitance level sensor, for control and safety point of view. The linearity of each sensor element depends upon the cylindricity and concentricity of the internal and external electrodes. The complexity of calibrating all sensors together has been addressed by two step calibration methodology which has been developed and used for the calibration of six capacitance sensors. All calibrations are done using Liquid Nitrogen (LN2) as a cryogenic fluid. In the first step of calibration, one of the elements of Liquid Hydrogen (LH2) level sensor is calibrated using 700mm eleven point discrete diode array. Four wire method has been used for the diode array. Thus a linearity curve for a single element of LH2 is obtained. In second step of calibration, using the equation thus obtained for the above sensor, it is considered as a reference for calibrating remaining elements of the same LH2 sensor and other level sensor (either Liquid Oxygen (LOX) or LH2). The elimination of stray capacitance for the capacitance level probes has been attempted. The automatic data logging of capacitance values through GPIB is done using LabVIEW 8.5.

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MnO2 is electrochemically deposited on Au coated quartz crystal to study the electrochemical capacitance properties and to monitor the mass variations that accompany reversible adsorption/desorption of Na+, Mg2+ and La3+ ions during discharge/charge cycling. There is an increase in the values of specific capacitance of MnO2 with increase in charge of the cation in the electrolyte. Also, there is an increase in mass during discharge due to adsorption of cations from the electrolyte resulting from reduction of MnO2. Mass decreases during charging process due to desorption of cations. The magnitude of mass variation is approximately proportional to the atomic weight of the cationic element. (C) 2012 Elsevier B.V. All rights reserved.

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Recently, authors published a method to indirectly measure series capacitance (C-s) of a single, isolated, uniformly wound transformer winding, from its measured frequency response. The next step was to implement it on an actual three-phase transformer. This task is not as straightforward as it might appear at first glance, since the measured frequency response on a three-phase transformer is influenced by nontested windings and their terminal connections, core, tank, etc. To extract the correct value of C-s from this composite frequency response, the formulation has to be reworked to first identify all significant influences and then include their effects. Initially, the modified method and experimental results on a three-phase transformer (4 MVA, 33 kV/433 V) are presented along with results on the winding considered in isolation (for cross validation). Later, the method is directly implemented on another three-phase unit (3.5 MVA, 13.8 kV/765 V) to show repeatability.

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Information available in frequency response data is equivalently available in the time domain as a response due to an impulse excitation. The idea to pursue this equivalence to estimate series capacitance is linked to the well-known fact that under impulse excitation, the line/neutral current in a transformer has three distinct components, of which, the initial capacitive component is the first to manifest, followed by the oscillatory and inductive components. Of these, the capacitive component is temporally well separated from the rest-a crucial feature permitting its direct access and analysis. Further, the winding initially behaves as a pure capacitive network, so the initial component must obviously originate from only the (series and shunt) capacitances. With this logic, it should therefore be possible to estimate series capacitance, just by measuring the initial capacitive component of line current and the total shunt capacitance. The principle of the method and details of its implementation on two actual isolated transformerwindings (uniformly wound) are presented. For implementation, a low-voltage recurrent surge generator, a current probe, and a digital oscilloscope are all that is needed. The method is simple and requires no programming and needs least user intervention, thus paving the way for its widespread use.

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Two-dimensional materials and their heterostructures have emerged as a new class of materials, not only for fundamental physics but also for electronic and optoelectronic applications. Black phosphorus (BP) is a relatively new addition to this class of materials. Its strong in-plane anisotropy makes BP a unique material for making conceptually new types of electronic devices. However, the global density of states (DOS) of BP in device geometry has not been measured experimentally. Here, we report the quantum capacitance measurements together with the conductance measurements on an hBN-protected few-layer BP (similar to six layers) in a dual-gated field effect transistor (FET) geometry. The measured DOS from our quantum capacitance is compared with density functional theory (DFT). Our results reveal that the transport gap for quantum capacitance is smaller than that in conductance measurements due to the presence of localized states near the band edge. The presence of localized states is confirmed by the variable range hopping seen in our temperature dependence conductivity. A large asymmetry is observed between the electron and hole side. This asymmetric nature is attributed to the anisotropic band dispersion of BP. Our measurements establish the uniqueness of quantum capacitance in probing the localized states near the band edge, hitherto not seen in conductance measurements.

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Antiferroelectric lead zirconate (PZ) thin films were deposited by pulsed laser ablation on platinum-coated silicon substrates. Films showed a polycrystalline pervoskite structure upon annealing at 650 degrees C for 5-10 min. Dielectric properties were investigated as a function of temperature and frequency. The dielectric constant of PZ films was 220 at 100 kHz with a dissipation factor of 0.03. The electric field induced transformation from the antiferroelectric phase to the ferroelectric phase was observed through the polarization change, using a Sawyer-Tower circuit. The maximum polarization value obtained was 40 mu C/cm(2). The average fields to excite the ferroelectric state, and to reverse to the antiferroelectric state were 71 and 140 kV/cm, respectively. The field induced switching was also observed through double maxima in capacitance-voltage characteristics. Leakage current was studied in terms of current versus time and current versus voltage measurements. A leakage current density of 5x10(-7) A/cm(2) at 3 V, for a film of 0.7 mu m thickness, was noted at room temperature. The trap mechanism was investigated in detail in lead zirconate thin films based upon a space charge limited conduction mechanism. The films showed a backward switching time of less than 90 ns at room temperature.

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A simple equivalent circuit model for the analysis of dispersion and interaction impedance characteristics of serpentine folded-waveguide slow-wave structure was developed by considering the straight and curved portions of structure supporting the dominant TE10-mode of the rectangular waveguide. Expressions for the lumped capacitance and inductance per period of the slow-wave structure were derived in terms of the physical dimensions of the structure, incorporating the effects of the beam-hole in the lumped parameters. The lumped parameters were subsequently interpreted for obtaining the dispersion and interaction impedance characteristics of the structure. The analysis was simple yet accurate in predicting the dispersion and interaction impedance behaviour at millimeter-wave frequencies. The analysis was benchmarked against measurement as well as with 3D electromagnetic modeling using MAFIA for two typical slow-wave structures (one at the Ka-band and the other at the W-band) and close agreement observed.

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An analysis of rectangular folded-waveguide slow-wave structure was developed using conformal mapping technique through Schwarz's polygon transformation and closed form expressions for the lumped capacitance and inductance per period of the slow-wave structure were derived in terms of the physical dimensions of the structure, incorporating the effects of the beam hole in the lumped parameters. The lumped parameters were subsequently interpreted for obtaining the dispersion and interaction impedance characteristics of the structure. The analysis was benchmarked for two typical millimeter-wave structures, one operating in Ka-band and the other operating in Q-band, against measurement and 3D electromagnetic modeling using MAFIA.

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Bread staling is a very complex phenomenon that is not yet completely understood. The present work explains how the electrical impedance spectroscopy technique can be utilized to investigate the effect of staling on the physicochemical properties of wheat bread during storage. An instrument based on electrical impedance spectroscopy technique is developed to study the electrical properties of wheat bread both at its crumb and crust with the help of designed multi-channel ring electrodes. Electrical impedance behavior, mainly capacitance and resistance, of wheat bread at crust and crumb during storage (up to 120 h) is investigated. The variation in capacitance showed the glass transition phenomenon at room temperature in bread crust after 96 h of storage with 18% of moisture in it. The resistance changes at bread crumb showed the starch recrystallization during staling.

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Among the various Mn compounds, both MnO2 and Mn(OH)2 are electrochemically active in supercapacitor studies. MnO2 and Mn(OH)2 are simultaneously deposited, through a one-pot method, on the anode and cathode, respectively, of a galvanostatic electrolysis cell consisting of aqueous Mn(NO3)2 electrolyte. MnO2 and Mn(OH)2 coated stainless steel (SS) electrodes are found to exhibit a capacitive behavior with a high specific capacitance. MnO2/SS and Mn(OH)2/SS electrodes are used as the negative and positive electrodes, respectively, in assembling nonsymmetrical capacitors and testing. The results indicate that both Mn-based electrodes prepared simultaneously in a single electrolysis possess interesting electrochemical properties for supercapacitor application.

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Partial discharges in a gaseous interface due to the presence of a dielectric between two uniform field electrodes in air at different pressures from 0.5 to 685 mm Hg have been studied and measurements of inception and extinction voltages, number of pulses and their charge magnitudes at inception are reported. It has been observed that the extinction voltage can be as low as 70% of the inception voltage suggesting that the working voltage in such cases should be about 30% lower than the observed inception voltage. Small magnitude pulses are found to be more in number than large magnitude pulses. The charge is found to be pressure dependent. The results have been explained on the basis of an equivalent circuit consisting of resistance and capacitance in which the discharge gap functions as a switch.

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An inexpensive and simple circuit to aid the direct measurement of majority carrier capture cross sections of impurity levels in the band gap of a semiconductor by the variable width filling pulse technique is presented. With proper synchronisation, during the period of application of the pulse, the device is disconnected from the capacitance meter to avoid distortion of the pulse and is reconnected again to the meter to record the emission transient. Modes of operation include manual triggering for long emission transients, repetitive triggering for isothermal and DLTS measurements and the DLTS mode which is to be used with signal analysers that already provide a synchronising pulse for disconnection.

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Investigations on the phase relations and dielectric properties of (1 -x)BaTiO3 + xNd2/3TiO 3 (BNT) ceramics sintered in air below 1650 K have been carried out. X-ray powder diffraction studies indicate apparent phase singularity for compositions with x < 0.3. Nd2Ti207 is detected at higher neodymium concentrations. The unit cell parameter changes continuously with neodymium content, and BaTiO3 is completely cubic at room temperature with x -- 0.0525, whereas electron diffraction studies indicate that the air-sintered BNT ceramics with x > 0.08 contain additional phases that are partly amorphous even to an electron beam. SEM observations reveal that BaTiO3 grains are mostly covered by a molten intergranular phase, and show the presence of randomly distributed Nd2Ti207 grains. Energy dispersive X-ray analysis shows the Ba-Nd-Ti ternary composition of the intergranular phase. Differential thermal analysis studies support the formation of a partial melt involving dissolution-precipitation of boundary layers of BaTiO3 grains. These complex phase relations are accounted for in terms of the phase instability of BaTiO3 with large cation-vacancy concentration as a result of heavy Nd 3+ substitution. The absence of structural intergrowth in (1 - x)BaTiO3 + xNd2/3TiO3 under oxidative conditions leads to a separation of phases wherein the new phases undergo melting and remain X-ray amorphous. BNT ceramics with 0.1 < x < 0.3 have ~eff >~ 104 with tan 6 < 0.1 and nearly flat temperature capacitance characteristics. The grain-size dependence of ee,, variations of ~eff and tan 6 with the measuring frequency, the non-ohmic resistivities, and the non-linear leakage currents at higher field-strengths which are accompanied by the decrease in eeff and rise in tan 3, are explained on the basis of an intergranular (internal boundary layer) dielectric characteristic of these ceramics.

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Some new observations on the phenomenon of photocapacitane on n-type silicon MOS structures under low intensities of illumination are reported. The difference between the illuminated and dark C---characteristics is automatically followed as a function of the applied bias thereby obtaining the differential photocapacitance and the resulting characteristics has been termed as the Low Intensity Differential Photocapacitance (LIDP). For an MOS capacitor, the LIDP characteristics is seen to go through a well defined maximum. The phenomenon has been investigated under different ambient conditions like light intensity, temperature, dependance of the frequency of the light etc. and it has been found that the phenomenon is due to a band excband excitation. In this connection, a novel sensitive technique for the measurement of the capacitance based upon following the frequency changes of a tank circuit is also described in some detail. It is also shown that the phenomenon can be understood by a simple theoretical model.