Correlating defect induced ferromagnetism and gas sensing properties of undoped tin oxide sensors

A correlation between gas sensing properties and defect induced Room Temperature Ferromagnetism (RTFM) is demonstrated in non-stoichiometric SnO2 prepared by solution combustion method. The presence of oxygen vacancies (V-O), confirmed by RTFM is identified as the primary factor for enhanced gas sensing effect. The as-prepared SnO2 shows high saturation magnetization of similar to 0.018 emu/g as compared to similar to 0.002 and similar to 0.0005 emu/g in annealed samples and SnO2 prepared by precipitation respectively. The SnO2 prepared by precipitation which is an equilibrium method of synthesis shows lesser defects compared to the combustion product and hence exhibits lesser sensitivity in spite of smaller crystallite size. The study utilizes RTFM as a potential tool to characterize metal oxide gas sensors and recognizes the significance of oxygen vacancies in sensing mechanism over the microstructure. (C) 2014 AIP Publishing LLC.

Growth of TiO2 Films by RF Magnetron Sputtering for MOS Gate Dielectrics: Influence of Substrate Temperature

Titanium dioxide thin films were deposited by RF reactive magnetron sputtering technique on p-type silicon(100) substrates held at temperatures in the range 303-673 K. The influence of substrate temperature on the core level binding energies, chemical bonding configuration, crystallographic structure and dielectric properties was investigated. X-ray photoelectron spectroscopy studies and Fourier transform infrared transmittance data confirmed the formation of stoichiometric films with anatase phase at a substrate temperature of 673 K. The films formed at 303 K were nanocrystalline with amorphous matrix while those deposited at 673 K were transformed in to crystalline phase and growth of grains in pyramidal like structure as confirmed by X-ray diffraction and atomic force microscopy respectively. Metal-oxide-semiconductor capacitors were fabricated with the configuration of Al/TiO2/Si structures. The current voltage, capacitance voltage and conductance voltage characteristics were studied to understand the electrical conduction and dielectric properties of the MOS devices. The leakage current density (at gate voltage of 2 V) decreased from 2.2 x 10(-6) to 1.7 x 10(-7) A/cm(2), the interface trap density decreased from 1.2 x 10(13) to 2.1 x 10(12) cm(-2) eV(-1) and the dielectric constant increased from 14 to 36 with increase of substrate temperature from 303 to 673 K.

Design Optimization of Thin-Film Transistors Based on a Metal-Substrate-Semiconductor Architecture for High DC Voltage Sensing

We discuss the potential application of high dc voltage sensing using thin-film transistors (TFTs) on flexible substrates. High voltage sensing has potential applications for power transmission instrumentation. For this, we consider a gate metal-substrate-semiconductor architecture for TFTs. In this architecture, the flexible substrate not only provides mechanical support but also plays the role of the gate dielectric of the TFT. Hence, the thickness of the substrate needs to be optimized for maximizing transconductance, minimizing mechanical stress, and minimizing gate leakage currents. We discuss this optimization, and develop n-type and p-type organic TFTs using polyvinyldene fluoride as the substrate-gate insulator. Circuits are also realized to achieve level shifting, amplification, and high drain voltage operation.

Low temperature solution processed high-kappa ZrO2 gate dielectrics for nanoelectonics

The high-kappa gate dielectrics, specifically amorphous films offer salient features such as exceptional mechanical flexibility, smooth surfaces and better uniformity associated with low leakage current density. In this work, similar to 35 nm thick amorphous ZrO2 films were deposited on silicon substrate at low temperature (300 degrees C, 1 h) from facile spin-coating method and characterized by various analytical techniques. The X-ray diffraction and X-ray photoelectron spectroscopy reveal the formation of amorphous phase ZrO2, while ellipsometry analysis together with the Atomic Force Microscope suggest the formation of dense film with surface roughness of 1.5 angstrom, respectively. The fabricated films were integrated in metal-oxide-semiconductor (MOS) structures to check the electrical capabilities. The oxide capacitance (C-ox), flat band capacitance (C-FB), flat band voltage (V-FB), dielectric constant (kappa) and oxide trapped charges (Q(ot)) extracted from high frequency (1 MHz) C-V curve are 186 pF, 104 pF, 0.37V, 15 and 2 x 10(-11) C, respectively. The small flat band voltage 0.37V, narrow hysteresis and very little frequency dispersion between 10 kHz-1 MHz suggest an excellent a-ZrO2/Si interface with very less trapped charges in the oxide. The films exhibit a low leakage current density 4.7 x 10(-9)A/cm(2) at 1V. In addition, the charge transport mechanism across the MOSC is analyzed and found to have a strong bias dependence. The space charge limited conduction mechanism is dominant in the high electric field region (1.3-5 V) due to the presence of traps, while the trap-supported tunneling is prevailed in the intermediate region (0.35-1.3 V). Low temperature solution processed ZrO2 thin films obtained are of high quality and find their importance as a potential dielectric layer on Si and polymer based flexible electronics. (C) 2016 Published by Elsevier B.V.

Modeling of Channel Potential and Subthreshold Slope of Symmetric Double-Gate Transistor

A new physically based classical continuous potential distribution model, particularly considering the channel center, is proposed for a short-channel undoped body symmetrical double-gate transistor. It involves a novel technique for solving the 2-D nonlinear Poisson's equation in a rectangular coordinate system, which makes the model valid from weak to strong inversion regimes and from the channel center to the surface. We demonstrated, using the proposed model, that the channel potential versus gate voltage characteristics for the devices having equal channel lengths but different thicknesses pass through a single common point (termed ``crossover point''). Based on the potential model, a new compact model for the subthreshold swing is formulated. It is shown that for the devices having very high short-channel effects (SCE), the effective subthreshold slope factor is mainly dictated by the potential close to the channel center rather than the surface. SCEs and drain-induced barrier lowering are also assessed using the proposed model and validated against a professional numerical device simulator.

Within-Die Gate Delay Variability Measurement using Re-configurable Ring Oscillator

We report a circuit technique to measure the on-chip delay of an individual logic gate (both inverting and non-inverting) in its unmodified form using digitally reconfigurable ring oscillator (RO). Solving a system of linear equations with different configuration setting of the RO gives delay of an individual gate. Experimental results from a test chip in 65nm process node show the feasibility of measuring the delay of an individual inverter to within 1pS accuracy. Delay measurements of different nominally identical inverters in close physical proximity show variations of up to 26% indicating the large impact of local or within-die variations.

Electron spin resonance absorption in organic metal polyaniline and its blend with PMMA

The electron spin resonance absorption in the synthetic metal polyaniline (PANI) doped with PTSA and its blend with poly(methylmethacrylate) (PMMA) is investigated in the temperature range between 4.2 and 300 K. The observed line shape follows Dyson's theory for a thick metallic plate with slowly diffusing magnetic dipoles. At low temperatures the line shape become symmetric and Lorentzian when the sample dimensions are small in comparison with the skin depth. The temperature dependence of electron spin relaxation time is discussed. (C) 1999 Elsevier Science Ltd. All rights reserved.

The use of tin and bronze in prehistoric southern Indian metallurgy

The medieval icons of southern India are among the most acclaimed Indian artistic innovations, especially those of the Chola Tamil kingdom (9th–10th centuries), which is best known for the Hindu iconography of the Dance of Siva that captured the imagination of master sculptor Rodin.1 Apart from these prolific images, however, not much was known about southern Indian copperbased metallurgy. Hence, these often spectacular castings have been regarded as a sudden efflorescence, almost without precedent, of skilled metallurgy as contrasted with tin-rich China or southeast Asia, for instance, where a developed copper-bronze tradition has been better appreciated.

Unoccupied electronic states in NiS2-xSex across the metal-insulator transition

We investigate the evolution of the electronic structure across the insulator-metal transition in NiS2-xSex with changing composition, but in the absence of any structural or magnetic changes. A comparison of the inverse photoemission spectra with band-structure calculations establishes the importance of correlation effects in these systems. Systematic changes in the spectral distribution establish the persistence of the upper Hubbard band well into the metallic regime, with the insulator-to-metal transition being driven by a transfer of spectral weight from the Hubbard band to states close to the Fermi energy.

Fabrication and evaluation of 1 Ah silver/metal hydride cells

Silver/metal hydride (Ag/MH) cells of about 1 Ah capacity have been fabricated and their discharge characteristics at different rates of discharge, faradaic efficiency, cycle life and a.c. impedance have been evaluated. These cells comprise metal-hydride electrodes prepared by employing similar to 60 mu m powder of an AB(2)-Laves phase alloy of nominal composition Zr0.5Ti0.5V0.6Cr0.2Ni1.2 with PTFE binder on a nickel-mesh substrate as the negative plates and commercial-grade silver electrodes as the positive plates. The cells are positive limited and exhibit two distinct voltage plateaus characteristic of two-step reduction of AgO to Ag during their low rates of discharge between C/20 and C/10. This feature is, however, absent when the cells are discharged at C/5 rate. On charging the cells to 100% of their capacity, the faradaic efficiency is found to be 100%. The impedance of the Ag/MH cell is essentially due to the impedance of the silver electrodes, since MH electrodes offer negligible impedance. The cells may be subjected to a large number of charge-discharge cycles with little deterioration.

Field and potential around local scatterers in thin metal films studied by scanning tunneling potentiometry

We report the direct observation of electrochemical potential and local transport field variations near scatterers like grain boundaries, triple points, and voids in thin platinum films studied by scanning tunneling potentiometry. The field is highest at a void, followed by a triple point and a grain boundary. The local transport field near a void can even be four orders of magnitude higher than the macroscopic field, indicating that the void is the most likely place for an electromigration induced failure. The field build up for a particular type of scatterer depends on the grain connectivity. We estimate an average grain boundary reflection coefficient for the film from the temperature dependence of its resistivity.

Supramolecular control of the magnetic anisotropy in two-dimensional high-spin Fe arrays at a metal interface

Magnetic atoms at surfaces are a rich model system for solid-state magnetic bits exhibiting either classical(1,2) or quantum(3,4) behaviour. Individual atoms, however, are difficult to arrange in regular patterns(1-5). Moreover, their magnetic properties are dominated by interaction with the substrate, which, as in the case of Kondo systems, often leads to a decrease or quench of their local magnetic moment(6,7). Here, we show that the supramolecular assembly of Fe and 1,4-benzenedicarboxylic acid molecules on a Cu surface results in ordered arrays of high-spin mononuclear Fe centres on a 1.5nm square grid. Lateral coordination with the molecular ligands yields unsaturated yet stable coordination bonds, which enable chemical modification of the electronic and magnetic properties of the Fe atoms independently from the substrate. The easy magnetization direction of the Fe centres can be switched by oxygen adsorption, thus opening a way to control the magnetic anisotropy in supramolecular layers akin to that used in metallic thin films.

Macroporous metal oxide foams through self-sustained combustion reactions

A number of macroporous metal oxide foams were prepared through self-sustained combustion reactions starting from dough made of the corresponding metal nitrate, urea and starch. The nitrate ion acts as an oxidizing agent, urea as fuel and starch as an organic binder. The metal oxide foams are characterized by scanning electron microscopy and powder X-ray diffraction.

Soft-particle model analysis of effect of LPS on electrophoretic softness of Acidithiobacillus ferrooxidans grown in presence of different metal ions

The effect of Surface lipopolysaccharides (LPS) on the electrophoretic softness and fixed charge density in the ion-penetrable layer of Acidithiobacillus ferrooxidans cells grown in presence of copper or arsenic ions have been discussed, The electrophoretic mobility data were analyzed using the soft-particle electrophoresis theory. Cell surface potentials of all the strains based on soft-particle theory were lower than those estimated using the conventional Smoluchowski theory, Exposure to metal ions increased the Surface electrophoretic softness with decrease in the fixed charge density. Effect of cell surface lipopolysaccharides on the model parameters are investigated and discussed.

Metal-Ion-Dependent Oxidative DNA Cleavage by Transition Metal Complexes of a New Water-Soluble Salen Derivative

A new water-soluble, salen [salen = bis(salicylidene) ethylenediamine]-based ligand, 3 was developed. Two of the metal complexes of this ligand, i.e., 3a, [Mn(III)] and 3b, [Ni(II)], in the presence of cooxidant magnesium monoperoxyphthalate (MMPP) cleaved plasmid DNA pTZ19R efficiently and rapidly at a concentration similar to 1 mu M. In contrast, under comparable conditions, other metal complexes 3c, [Cu(II)] or 3d, [Cr(III)] could not induce any significant DNA nicking. The findings with Ni(II) complex suggest that the DNA cleavage processes can be modulated by the disposition of charges around the ligand.