High On-Off Ratio Bilayer Graphene Complementary Field Effect Transistors

In this paper, we propose a novel S/D engineering for dual-gated Bilayer Graphene (BLG) Field Effect Transistor (FET) using doped semiconductors (with a bandgap) as source and drain to obtain unipolar complementary transistors. To simulate the device, a self-consistent Non-Equilibrium Green's Function (NEGF) solver has been developed and validated against published experimental data. Using the simulator, we predict an on-off ratio in excess of 10(4) and a subthreshold slope of similar to 110mV/decade with excellent scalability and current saturation, for a 20nm gate length unipolar BLG FET. However, the performance of the proposed device is found to be strongly dependent on the S/D series resistance effect. The obtained results show significant improvements over existing reports, marking an important step towards bilayer graphene logic devices.

Phase separation in critical and off-critical fluids: specific experimental behaviours at criticality

The phase separation in fluids close to a critical point can be observed in the form of either an interconnected pattern (critical case) or a disconnected pattern (off-critical case). These two regimes have been investigated in different ways. First, a sharp change in pattern is shown to occur very close to the critical point when the composition is varied. No crossover has been observed between the t1 behaviour (interconnected) and a t1/3 behaviour (disconnected), where t is time. This latter growth law, which occurs in the case of compact droplets, will be discussed. Second, it has been observed that a growing interconnected pattern leaves a signature in the form of small droplets. The origin of such a distribution will be discussed in terms of coalescence of domains. No distribution of this kind is observed in the off-critical case.

Off-line signature verification using genetically optimized weighted features

This paper is concerned with off-line signature verification. Four different types of pattern representation schemes have been implemented, viz., geometric features, moment-based representations, envelope characteristics and tree-structured Wavelet features. The individual feature components in a representation are weighed by their pattern characterization capability using Genetic Algorithms. The conclusions of the four subsystems teach depending on a representation scheme) are combined to form a final decision on the validity of signature. Threshold-based classifiers (including the traditional confidence-interval classifier), neighbourhood classifiers and their combinations were studied. Benefits of using forged signatures for training purposes have been assessed. Experimental results show that combination of the Feature-based classifiers increases verification accuracy. (C) 1999 Pattern Recognition Society. Published by Elsevier Science Ltd. All rights reserved.

Artifact-free reconstruction from off-axis digital holograms through nonlinear filtering

We present experimental investigation of a new reconstruction method for off-axis digital holographic microscopy (DHM). This method effectively suppresses the object auto-correlation, commonly called the zero-order term, from holographic measurements, thereby suppressing the artifacts generated by the intensities of the two beams employed for interference from complex wavefield reconstruction. The algorithm is based on non-linear filtering, and can be applied to standard DHM setups, with realistic recording conditions. We study the applicability of the technique under different experimental configurations, such as topographic images of microscopic specimens or speckle holograms.

Optimization of off-oriented Ge substrates for MOVPE-grown GaAs solar cells

GaAs/Ge heterostructures having abrupt interfaces were grown on 2degrees, 6degrees, and 9degrees off-cut Ge substrates and investigated by cross-sectional high-resolution transmission electron microscopy (HRTEM), scanning electron microscopy, photoluminescence spectroscopy and electrochemical capacitance voltage (ECV) profiler. The GaAs films were grown on off-oriented Ge substrates with growth temperature in the range of 600-700degreesC, growth rate of 3-12 mum/hr and a V/III ratio of 29-88. The lattice indexing of HRTEM exhibits an excellent lattice line matching between GaAs and Ge substrate. The PL spectra from GaAs layer on 6degrees off-cut Ge substrate shows the higher excitonic peak compared with 2degrees and 9degrees off-cut Ge substrates. In addition, the luminescence intensity from the GaAs solar cell grown on 6degrees off-cut is higher than on 9degrees off-cut Ge substrates and signifies the potential use of 6degrees off-cut Ge substrate in the GaAs solar cells industry. The ECV profiling shows an abrupt film/substrate interface as well as between various layers of the solar cell structures.

Describing Hand Postures: Inspirations from Classical Mudras

The objective of this work is to develop a systematic methodology for describing hand postures and grasps which is independent of the kinematics and geometry of the hand model which in turn can be used for developing a universal referencing scheme. It is therefore necessary that the scheme be general enough to describe the continuum of hand poses. Indian traditional classical dance form, “Bharathanatyam”, uses 28 single handed gestures, called “mudras”. A Mudra can be perceived as a hand posture with a specific pattern of finger configurations. Using modifiers, complex mudras could be constructed from relatively simple mudras. An adjacency matrix is constructed to describe the relationship among mudras. Various mudra transitions can be obtained from the graph associated with this matrix. Using this matrix, a hierarchy of the mudras is formed. A set of base mudras and modifiers are used for describing how one simple posture of hand can be transformed into another relatively complex one. A canonical set of predefined hand postures and modifiers can be used in digital human modeling to develop standard hand posture libraries.

The radiation resistance of off-set series slots in microstrip line

The radiation resistance of off-set series slots has been calculated for microstrip lines using the method proposed by Breithaupt for strip lines. A suitable transformation is made to allow for the difference in structure. Curves relating the slot resistance to the microstrip length, width and off-set distance have been obtained. Microstrip slot antenna arrays are becoming important in applications where size and weight are of significance. The radiation resistance is a very significant parameter is the design of such arrays. Oliner first calculated the radiation conductance of centered series slots in strip transmission lines and that analysis was extended by Breithaupt to the off-set series slots in stripline. The radiation resistance of off-set series slots in microstrip lines is calculated in this paper and data are obtained for different slot lengths, slot widths and off-set values. An example of the use of these data in array antenna design in shown.

Performance and variability trade-off with gate-to-source/drain overlap length

The impact of gate-to-source/drain overlap length on performance and variability of 65 nm CMOS is presented. The device and circuit variability is investigated as a function of three significant process parameters, namely gate length, gate oxide thickness, and halo dose. The comparison is made with three different values of gate-to-source/drain overlap length namely 5 nm, 0 nm, and -5 nm and at two different leakage currents of 10 nA and 100 nA. The Worst-Case-Analysis approach is used to study the inverter delay fluctuations at the process corners. The drive current of the device for device robustness and stage delay of an inverter for circuit robustness are taken as performance metrics. The design trade-off between performance and variability is demonstrated both at the device level and circuit level. It is shown that larger overlap length leads to better performance, while smaller overlap length results in better variability. Performance trades with variability as overlap length is varied. An optimal value of overlap length of 0 nm is recommended at 65 nm gate length, for a reasonable combination of performance and variability.

Diversity-Rate Trade-off for Fading Channels with Power Control

We consider a complex, additive, white Gaussian noise channel with flat fading. We study its diversity order vs transmission rate for some known power allocation schemes. The capacity region is divided into three regions. For one power allocation scheme, the diversity order is exponential throughout the capacity region. For selective channel inversion (SCI) scheme, the diversity order is exponential in low and high rate region but polynomial in mid rate region. For fast fading case we also provide a new upper bound on block error probability and a power allocation scheme that minimizes it. The diversity order behaviour of this scheme is same as for SCI but provides lower BER than the other policies.

Loop transformations: convexity, pruning, and optimization

High-level loop transformations are a key instrument in mapping computational kernels to effectively exploit the resources in modern processor architectures. Nevertheless, selecting required compositions of loop transformations to achieve this remains a significantly challenging task; current compilers may be off by orders of magnitude in performance compared to hand-optimized programs. To address this fundamental challenge, we first present a convex characterization of all distinct, semantics-preserving, multidimensional affine transformations. We then bring together algebraic, algorithmic, and performance analysis results to design a tractable optimization algorithm over this highly expressive space. Our framework has been implemented and validated experimentally on a representative set of benchmarks running on state-of-the-art multi-core platforms.