Growth of TiO2 Films by RF Magnetron Sputtering for MOS Gate Dielectrics: Influence of Substrate Temperature

Titanium dioxide thin films were deposited by RF reactive magnetron sputtering technique on p-type silicon(100) substrates held at temperatures in the range 303-673 K. The influence of substrate temperature on the core level binding energies, chemical bonding configuration, crystallographic structure and dielectric properties was investigated. X-ray photoelectron spectroscopy studies and Fourier transform infrared transmittance data confirmed the formation of stoichiometric films with anatase phase at a substrate temperature of 673 K. The films formed at 303 K were nanocrystalline with amorphous matrix while those deposited at 673 K were transformed in to crystalline phase and growth of grains in pyramidal like structure as confirmed by X-ray diffraction and atomic force microscopy respectively. Metal-oxide-semiconductor capacitors were fabricated with the configuration of Al/TiO2/Si structures. The current voltage, capacitance voltage and conductance voltage characteristics were studied to understand the electrical conduction and dielectric properties of the MOS devices. The leakage current density (at gate voltage of 2 V) decreased from 2.2 x 10(-6) to 1.7 x 10(-7) A/cm(2), the interface trap density decreased from 1.2 x 10(13) to 2.1 x 10(12) cm(-2) eV(-1) and the dielectric constant increased from 14 to 36 with increase of substrate temperature from 303 to 673 K.

A new class of high strength high temperature Cobalt based gamma-gamma ` Co-Mo-Al alloys stabilized with Ta addition

The present paper reports a new class of Co based superalloys that has gamma-gamma' microstructure and exhibits much lower density compared to other commercially available Co superalloys including Co-Al-W based alloys. The basic composition is Co-10Al-5Mo (at%) with addition of 2 at% Ta for stabilization of gamma' phase. The gamma-gamma' microstructure evolves through solutionising and aging treatment. Using first principles calculations, we observe that Ta plays a crucial role in stabilizing gamma' phase. By addition of Ta in the basic stoichiometric composition Co-3(Al, Mo), the enthalpy of formation (Delta H-f) of L1(2) structure (gamma' phase) becomes more negative in comparison to DO19 structure. The All of the L12 structure becomes further more negative by the occupancy of Ni and Ti atoms in the lattice suggesting an increase in the stability of the gamma' precipitates. Among large number of alloys studied experimentally, the paper presents results of detailed investigations on Co-10Al-5Mo-2Ta, Co-30Ni-10Al-5Mo-2Ta and Co-30Ni-10Al-5Mo-2Ta-2Ti. To evaluate the role alloying elements, atom probe tomography investigations were carried out to obtain partition coefficients for the constituent elements. The results show strong partitioning of Ni, Al, Ta and Ti in ordered gamma' precipitates. 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Wear Behavior of Cooling Slope Rheocast A356 Al Alloy

In the present study, the dry sliding wear behavior of rheocast A356 Al alloys, cast using a cooling slope, as well as gravity cast A356 Al alloy have been investigated at a low sliding speed of 1ms(-1), against a hardened EN 31 disk at different loads. The wear mechanism involves microcutting-abrasion and adhesion at lower load for all of the alloys studied in the present work. On the other hand, at higher load, mainly adhesive wear along with oxide formation is observed for gravity cast A356 Al alloy and rheocast A356 Al alloy, cast using a 45 degrees slope angle. Unlike other alloys, 60 degrees slope rheocast A356 Al alloy is found to undergo mainly abrasive wear at higher load. Accordingly, the rheocast sample, cast using a 60 degrees cooling slope, exhibits a remarkably lower wear rate at higher load compared to gravity cast and 45 degrees slope rheocast samples. This is attributed to the dominance of abrasive wear at higher load in the case of rheocast A356 Al alloy cast using a 60 degrees slope. The presence of finer and more spherical primary Al grain morphology is found to resist adhesive wear in case of 60 degrees cooling slope processed rheocast alloy and thereby delay the transition of the wear regime from normal wear to severe wear.

Demodulation of Narrowband Speech Spectrograms Using the Riesz Transform

We propose a two-dimensional (2-D) multicomponent amplitude-modulation, frequency-modulation (AM-FM) model for a spectrogram patch corresponding to voiced speech, and develop a new demodulation algorithm to effectively separate the AM, which is related to the vocal tract response, and the carrier, which is related to the excitation. The demodulation algorithm is based on the Riesz transform and is developed along the lines of Hilbert-transform-based demodulation for 1-D AM-FM signals. We compare the performance of the Riesz transform technique with that of the sinusoidal demodulation technique on real speech data. Experimental results show that the Riesz-transform-based demodulation technique represents spectrogram patches accurately. The spectrograms reconstructed from the demodulated AM and carrier are inverted and the corresponding speech signal is synthesized. The signal-to-noise ratio (SNR) of the reconstructed speech signal, with respect to clean speech, was found to be 2 to 4 dB higher in case of the Riesz transform technique than the sinusoidal demodulation technique.

Influence of deposition time on the properties of electrodeposited Cu(In,Al)Se-2 thin films

Cu(In,Al)Se-2 films are grown using single step electrodeposition technique. The film properties are studied by varying the deposition time from 500 to 2000 s. Peaks corresponding to elemental Se and Cu2Se phase started appearing from 1200 s of deposition. The composition is changed significantly after 1500 S. Se concentration increased from 57 to 68% with the increase in the deposition time. The Cu2Se phase is dominant in the films deposited for a duration of 2000 s and the grain size increased from 1.12 to 2.15 mu m in this film. Raman analysis confirmed the presence of Se and Cu2Se phase in C1200. In C1500 and C2000 the spectra showed prominent mode corresponding to Cu2Se. The thickness of the film increased from 0.85 to 2.3 mu m with the increase in the deposition time. All the films showed p-type conductivity and resistivity reduced with increased thickness. (C) 2015 Elsevier Ltd. All rights reserved.

Die Filling Behaviour of Semi Solid A356 Al Alloy Slurry During Rheo Pressure Die Casting

The present work discusses the findings obtained from simulations of semi solid die filling of a steering knuckle, prior to actual component development using in-house developed rheo pressure die casting system. Die filling capability of A356 Al alloy at semi-solid state has been investigated using commercial software Flow-3Dcast to optimise the pouring temperature of semi-solid slurry into the die cavity, while all other variables such as gating design, die preheat temperature and injection velocity are kept constant based on the prior knowledge obtained from trial numerical simulations and experimentation. Efforts have been made to nullify the essence of costly, time consuming experiments towards obtaining high-quality castings out of the findings obtained from numerical simulations. The optimum pouring temperature identified in the present study is 610 A degrees C, which facilitates smoother slurry flow, minimum surface defect concentration, uniform temperature field and solid fraction distribution within the component cavity.

Role of Si modification on the compressive flow behavior of Al-Si based alloy

The flow characteristics of a near-eutectic heat-treated Al-Si based cast alloy have been examined in compression at strain rates varying from 3 x 10(-4) to 10(2) s(-1) and at three different temperatures, i.e., room temperature (RT), 100 degrees C and 200 degrees C. The dependence of flow behavior on modification is examined by testing the alloy in both the unmodified and modified conditions. Modification has strong influence on strain rate sensitivity (SRS), strength and work hardening behavior of the alloy. The strength of the alloy is found to increase with increase in strain rate for both the conditions. The increase is more rapid above the strain rate of 10(-1) s(-1) for the unmodified alloy at all the temperatures. This rapid increase is observed at 1 s(-1) at RT and 100 degrees C, and at 10(-2) s(-1) at 200 degrees C for the modified alloy. The thermally dependent process of the Al matrix is rate controlling in the unmodified alloy. On the other hand, the thermally dependent process of both Al matrix and Si particles are rate controlling, which is responsible for the higher strain rate sensitivity (SRS) in the modified alloy. The unmodified alloy exhibits a larger work hardening rate than the modified alloy during the initial stages of straining due to fiber loading of unmodified Si particles. However, the hardening rate decreases sharply at higher strains for the unmodified alloy due to a higher rate of Si particle fracture. Thermal softening is observed for both alloys at 200 degrees C due to precipitate coarsening, which leads to a decrease in SRS at higher temperatures. Stress simulations by microstructure based finite element method support the experimentally observed particle and matrix fracture behavior. Negative SRS and serrated flow are observed at lower strain rate regime (3 x 10(-4) to 10(-2) s(-1)) at RT and 100 degrees C, in both alloys. The critical onset strain is found to be lower and the magnitude of serration is found to be higher for the modified alloy, which suggests that, in addition to dynamic strain aging, Si particle size and morphology also play a role in serrated flow. (C) 2015 Elsevier Inc All rights reserved.

Molecular profiling of sepsis in mice using Fourier Transform Infrared Microspectroscopy

Sepsis is a life threatening condition resulting from a high burden of infection. It is a major health care problem and associated with inflammation, organ dysfunction and significant mortality. However, proper understanding and delineating the changes that occur during this complex condition remains a challenge. A comparative study involving intra-peritoneal injection of BALB/c mice with Salmonella Typhimurium (infection), lipopolysaccharide (endotoxic shock) or thioglycollate (sterile peritonitis) was performed. The changes in organs and sera were profiled using immunological assays and Fourier Transform Infrared (FTIR) micro-spectroscopy. There is a rapid rise in inflammatory cytokines accompanied with lowering of temperature, respiratory rate and glucose amounts in mice injected with S. Typhimurium or lipopolysaccharide. FTIR identifies distinct changes in liver and sera: decrease in glycogen and protein/lipid ratio and increase in DNA and cholesteryl esters. These changes were distinct from the pattern observed in mice treated with thioglycollate and the differences in the data obtained between the three models are discussed. The combination of FTIR spectroscopy and other biomarkers will be valuable in monitoring molecular changes during sepsis. GRAPHICS] Intra-peritoneal infection with high dose of Salmonella Typhimurium leads to rapid increase in inflammatory cytokines, e.g. Tnf alpha (A). FTIR analysis of liver (B) and sera (C) identifies several metabolic changes: glycogen, protein/lipid, cholesteryl esters and DNA.

Effect of RF power on the structural, optical and gas sensing properties of RF-sputtered Al doped ZnO thin films

The effect of Radio Frequency (RF) power on the properties of magnetron sputtered Al doped ZnO thin films and the related sensor properties are investigated. A series of 2 wt% Al doped ZnO; Zn0.98Al0.02O (AZO) thin films prepared with magnetron sputtering at different RF powers, are examined. The structural results reveal a good adhesive nature of thin films with quartz substrates as well as increasing thickness of the films with increasing RF power. Besides, the increasing RF power is found to improve the crystallinity and grain growth as confirmed by X-ray diffraction. On the other hand, the optical transmittance is significantly influenced by the RF power, where the transparency values achieved are higher than 82% for all the AZO thin films and the estimated optical band gap energy is found to decrease with RF power due to an increase in the crystallite size as well as the film thickness. In addition, the defect induced luminescence at low temperature (77 K) and room temperature (300 K) was studied through photoluminescence spectroscopy, it is found that the defect density of electronic states of the Al3+ ion increases with an increase of RF power due to the increase in the thickness of the film and the crystallite size. The gas sensing behavior of AZO films was studied for NO2 at 350 degrees C. The AZO film shows a good response towards NO2 gas and also a good relationship between the response and the NO2 concentration, which is modeled using an empirical formula. The sensing mechanism of NO2 is discussed.

Effect of RF power on the structural, optical and gas sensing properties of RF-sputtered Al doped ZnO thin films

The effect of Radio Frequency (RF) power on the properties of magnetron sputtered Al doped ZnO thin films and the related sensor properties are investigated. A series of 2 wt% Al doped ZnO; Zn0.98Al0.02O (AZO) thin films prepared with magnetron sputtering at different RF powers, are examined. The structural results reveal a good adhesive nature of thin films with quartz substrates as well as increasing thickness of the films with increasing RF power. Besides, the increasing RF power is found to improve the crystallinity and grain growth as confirmed by X-ray diffraction. On the other hand, the optical transmittance is significantly influenced by the RF power, where the transparency values achieved are higher than 82% for all the AZO thin films and the estimated optical band gap energy is found to decrease with RF power due to an increase in the crystallite size as well as the film thickness. In addition, the defect induced luminescence at low temperature (77 K) and room temperature (300 K) was studied through photoluminescence spectroscopy, it is found that the defect density of electronic states of the Al3+ ion increases with an increase of RF power due to the increase in the thickness of the film and the crystallite size. The gas sensing behavior of AZO films was studied for NO2 at 350 degrees C. The AZO film shows a good response towards NO2 gas and also a good relationship between the response and the NO2 concentration, which is modeled using an empirical formula. The sensing mechanism of NO2 is discussed.