An infrared spectroscopic study of the low-spin to intermediate-spin state (1A1–3T1) transition in rare earth cobaltates, LnCoO3 (Ln=La, Pr and Nd)

Low-spin (LS) to intermediate-spin (IS) state transitions in crystals of LnCoO3 (Ln=La, Pr and Nd) have been investigated by variable temperature infrared spectroscopy. The spectra reveal the occurrence of the transition around 120, 220 and 275 K, respectively, in LaCoO3,PrCoO3 and NdCoO3, at which temperatures the intensities of the stretching and the bending modes associated with the LS state decrease, accompanied by an increase in the intensities of the bands due to IS state. The characteristic frequencies of both the spin states decrease with increase in temperature, showing anomalies around the transition.

An infrared spectroscopic study of the low-spin to intermediate-spin state ((1)A(1)-T-3(1)) transition in rare earth cobaltates, LnCoO(3) (Ln = La, Pr and Nd)

Low-spin (LS) to intermediate-spin (IS) state transitions in crystals of LnCoO(3) (Ln = La, Pr and Nd) have been investigated by variable temperature infrared spectroscopy. The spectra reveal the occurrence of the transition around 120, 220 and 275 K, respectively, in LaCoO3,PrCoo(3) and NdCoO3, at which temperatures the intensities of the stretching and the bending modes associated with the LS state decrease, accompanied by an increase in the intensities of the bands due to IS state. The characteristic frequencies of both the spin states decrease with increase in temperature, showing anomalies around the transition. (C) 2001 Published by Elsevier Science B.V.

Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures

The current�voltage characteristics of Au/n-GaAs Schottky diodes grown by metal-organic vapor-phase epitaxy on Ge substrates were determined in the temperature range 80�300 K. The zero-bias barrier height for current transport decreases and the ideality factor increases at low temperatures. The ideality factor was found to show the T0 effect and a higher characteristic energy. The excellent matching between the homogeneous barrier height and the effective barrier height was observed and infer good quality of the GaAs film. No generation�recombination current due to deep levels arising during the GaAs/Ge heteroepitaxy was observed in this study. The value of the Richardson constant was found to be 7.04 A K?2 cm?2, which is close to the value used for the determination of the zero-bias barrier height.

Low temperature synthesis of ferromagnetic (LaK)MnO3 from KCl, KBr and KI fluxes

Potassium doped lanthanum manganites have been synthesized from KCl, KBr and KI fluxes at 900, 850 and 750 °C respectively. While all the flux-grown oxides are ferromagnetic metals (Tc=290–330 K), the oxides grown from KCl and KBr fluxes crystallize in the rhombohedral structure and that synthesized from KI flux adopts the cubic structure. The enhancement in Tc correlates with the increasing tendency of the flux to get oxidized and decreasing melting points of the flux. Nearly stoichiometric (LaK)MnO3 with 33 % of Mn4+ concentration could be prepared at temperature as low as 750 °C. Composition of all the phases have been obtained from the chemical analysis of the elements present.

Starting scheme for load commutated inverter-fed wound field synchronous machine using an auxiliary low-power voltage source inverter

Conventional thyristor-based load commutated inverter (LCI)-fed wound field synchronous machine operates only above a minimum speed that is necessary to develop enough back emf to ensure commutation. The drive is started and brought up to a speed of around 10-15% by a complex `dc link current pulsing' technique. During this process, the drive have problems such as pulsating torque, insufficient average starting torque, longer starting time, etc. In this regard a simple starting and low-speed operation scheme, by employing an auxiliary low-power voltage source inverter (VSI) between the LCI and the machine terminals, is presented in this study. The drive is started and brought up to a low speed of around 15% using the VSI alone with field oriented control. The complete control is then smoothly and dynamically transferred to the conventional LCI control. After the control transfer, the VSI is turned off and physically disconnected from the main circuit. The advantages of this scheme are smooth starting, complete control of torque and flux at starting and low speeds, less starting time, stable operation, etc. The voltage rating of the required VSI is very low of the order of 10-15%, whereas the current rating is dependent on the starting torque requirement of the load. The experimental results from a 15.8 hp LCI-fed wound field synchronous machine are given to demonstrate the scheme.

Analytical Study of Low-Field Diffusive Transport in Highly Asymmetric Bilayer Graphene Nanoribbon

We present a simplified theory of carrier backscattering coefficient in a twofold degenerate asymmetric bilayer graphene nanoribbon (BGN) under the application of a low static electric field. We show that for a highly asymmetric BGN(Delta = gamma), the density of states in the lower subband increases more that of the upper, in which Delta and gamma are the gap and the interlayer coupling constant, respectively. We also demonstrate that under the acoustic phonon scattering regime, the formation of two distinct sets of energy subbands signatures a quantized transmission coefficient as a function of ribbon width and provides an extremely low carrier reflection coefficient for a better Landauer conductance even at room temperature. The well-known result for the ballistic condition has been obtained as a special case of the present analysis under certain limiting conditions which forms an indirect validation of our theoretical formalism.

A study of Al2O3:C films on Si(100) grown by low pressure MOCVD

We report the characterization of carbonaceous aluminium oxide, Al2O3:C, films grown on Si(100) by metalorganic chemical vapor deposition. The focus is on the study of the effects of carbon on the dielectric properties of aluminium oxide in a qualitative manner. The carbon present in the aluminium oxide film derives from aluminium acetylacetonate used as the source of aluminium. As-grown films comprise nanometer-sized grains of alumina (∼ 20–50 nm) in an amorphous carbonaceous matrix, as examined by X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The films are shiny; they are smooth as observed by scanning electron microscopy (SEM). An attempt has been made to explore the defects (viz., oxide charge density) in the aluminium oxide films using room temperature high frequency capacitance – voltage (C-V) and current–voltage (I-V) measurements. The hysteresis and stretch-out in the high frequency C-V plots is indicative of charge trapping. The role of heteroatoms, as characterized by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy, in the transport of charge in Al2O3:C films is discussed.

Epitaxial Growth of Co3O4 Films by Low Temperature, Low Pressure Chemical Vapor Deposition

The growth of strongly oriented or epitaxial thin films of metal oxides generally requires relatively high growth temperatures or infusion of energy to the growth surface through means such as ion bombardment. We have grown high quality epitaxial thin films of Co3O4 on different substrates at a temperature as low as 450°C by low-pressure metal-organic chemical vapor deposition (MOCVD) using cobalt(II) acetylacetonate as the precursor. With oxygen as the reactant gas, polycrystalline Co3O4 films are formed on glass and Si(100) in the temperature range 350-550°C. Under similar conditions of growth, highly oriented films of Co3O4 are formed on SrTiO3(100) and LaAlO3(100). The film on LaAlO3(100) grown at 450°C show a rocking curve FWHM of 1.61°, which reduces to 1.32° when it is annealed in oxygen at 725°C. The film on SrTiO3(100) has a FWHM of 0.330 (as deposited) and 0.29° (after annealing at 725°C). The ø-scan analysis shows cube-on-cube epitaxy on both these substrates. The quality of epitaxy on SrTiO3(100) is comparable to the best of the pervoskite-based oxide thin films grown at significantly higher temperatures.

Synthesis of cnt-metal oxide nano-composite electrode materials for supercapacitator by low-pressure mocvd

Homogeneous composite thin films of Fe2O3-carbon nanotube were synthesized in a novel, single-step process by metalorganic chemical vapor deposition (MOCVD) using ferric acetyl acetonate as precursor. The deposition of composite takes place in a narrow range of CVD conditions, beyond which the deposition either multiwall carbon nanotubes (MWNTs) only or hematite (α-Fe2O3) only takes place. The composite film formed on stainless steel substrates were tested for their supercapacitive properties in various aqueous electrolytes.

Low temperature crystallographic data on Kevlar 49 fibres

Using X-ray diffraction data, the behaviour of Kevlar 49 fibres at low temperatures, up to -100degreesC, has been analysed. During cooling, the basal plane of the monoclinic unit cell shrinks whereas the c- (unique, chain axis) length is not significantly affected. In contrast, in the return heating cycle to ambient temperature, the basal plane expands and contraction occurs along the chain direction. The unit cell registers a reduction in volume in both the cooling and heating cycles. Conspicuously, after a cycle of cooling and heating, the unit cell does not return to its initial volume. (C) 2003 Kluwer Academic Publishers.

Low temperature synthesis, structure and properties of alkali-doped La2NiO4, LaNiO3 and LaNi0.85Cu0.15O3 from alkali hydroxide fluxes

We report a low-temperature synthesis of La1.95Na0.05NiO4 from NaOH flux, La0.97K0.03NiO3 and La0.95K0.05Ni0.85Cu0.15O3 phases from KOH flux at 400 degreesC. Alkali-doped LaNiO3 can be prepared in KOH, but not in NaOH flux and La2NiO4 can be prepared in NaOH, but not in KOH flux. The flux-grown oxides were characterized by powder X-ray Rietveld profile analysis and electron microscopy. Sodium doped La2NiO4 crystallizes in orthorhombic structure and potassium doped LaNiO3-phases crystallizes in rhombohedral structure. La1.95Na0.05NiO4 is weakly paramagnetic and semiconducting while La0.97K0.03NiO3 and La0.95K0.05Ni0.85Cu0.15O3 show Pauli paramagnetic and metallic behavior. (C) 2002 Editions scientifiques et medicales Elsevier SAS. All rights reserved.

Low-temperature polaronic relaxations with variable range hopping conductivity in FeTiMO(6) (M = Ta,Nb,Sb)

Low-temperature dielectric measurements on FeTiMO(6) (M = Ta,Nb,Sb) rutile-type oxides at frequencies from 0.1 Hz to 10 MHz revealed anomalous dielectric relaxations with frequency dispersion. Unlike the high-temperature relaxor response of these materials, the low-temperature relaxations are polaronic in nature. The relationship between frequency and temperature of dielectric loss peak follows T(-1/4) behavior. The frequency dependence of ac conductivity shows the well-known universal dielectric response, while the dc conductivity follows Mott variable range hopping (VRH) behavior, confirming the polaronic origin of the observed dielectric relaxations. The frequency domain analysis of the dielectric spectra shows evidence for two relaxations, with the high-frequency relaxations following Mott VRH behavior more closely. Significantly, the Cr- and Ga-based analogs, CrTiNbO(6) and GaTiMO(6) (M = Ta,Nb), that were also studied, did not show these anomalies.

Carbon based materials for low temperature detection

Resistance temperature detectors (RTDs) are being widely used to detect low temperature, while thermocouples (TCs) are being used to detect high temperature. The materials suitable for RTDs are platinum, germanium, carbon, carbon-glass, cernox, etc. Here, we have reported the possible application of another form of carbon i.e. carbon nanotubes in low temperature thermometry. It has been shown the resistance R and the sensitivity of carbon nanotube bundles can be tuned and made suitable for ultralow temperature detection. We report on the R-T measurement of carbon nanotube bundles from room temperature down to 1 K to felicitate the possible application of bundles in low temperature RTDs. ©2008 American Institute of Physics