284 resultados para FILM FORMATION


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The influence of strain rate and state-of-stress on the formation of ferrite in stainless steel type AISI 304L, 304 and 304 as-cast, during hot working has been studied. Compression and torsion tests were conducted in the temperature range 1100 to 1250 degrees C and strain rate range 0.001 to 100 s(-1) on these materials, Ferrite formation occurs during deformation at temperatures above 1150 degrees C and strain rates above 10 s(-1), in stainless steel type AISI 304L and 304. The tendency for the formation of ferrite is more in as-cast 304 than in wrought 304, In as-cast 304 the ferrite forms at lower temperatures and strain rates, The tendency for the ferrite formation is more in torsion than in compression.

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In this paper we report the mechanical alloying behaviour of elemental aluminium with diamond cubic elements Ge and Si. A metastable crystalline phase with rhombohedral crystal structure forms in Al-70 Ge-30 and Al-60 Ge-40 alloy compositions. The phase always coexists with elemental constituents and decomposes over a broad temperature range. No such metastable phase could be observed in the Al-Si system. We also report X-ray diffractometry and differential scanning calorimetry results suggestive of amorphization. Finally a comparison was made of the present result with that obtained in rapid solidification.

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This work describes the electrical switching behavior of three telluride based amorphous chalcogenide thin film samples, Al-Te, Ge-Se-Te and Ge-Te-Si. These amorphous thin films are made using bulk glassy ingots, prepared by conventional melt quenching technique, using flash evaporation technique; while Al-Te sample has been coated in coplanar electrode geometry, Ge-Se-Te and Ge-Te-Si samples have been deposited with sandwich electrodes. It is observed that all the three samples studied, exhibit memory switching behavior in thin film form, with Ge-Te-Si sample exhibiting a faster switching characteristic. The difference seen in the switching voltages of the three samples studied has been understood on the basis of difference in device geometry and thickness. Scanning electron microscopic image of switched region of a representative Ge15Te81Si4 sample shows a structural change and formation of crystallites in the electrode region, which is responsible for making a conducting channel between the two electrodes during switching.

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A method combining the Monte Carlo technique and the simple fragment approach has been developed for simulating network formation in amine-catalysed epoxy-anhydride systems. The method affords a detailed insight into the nature and composition of the network, showing the distribution of various fragments. It has been used to characterize the network formation in the reaction of the diglycidyl ester of isophthalic acid with hexahydrophthalic anhydride, catalysed by benzyldimethylamine. Pre-gel properties like number and weight distributions and average molecular weights have been calculated as a function of epoxy conversion, leading to a prediction of the gel-point conversion. Analysis of the simulated network further yields other characteristic properties such as concentration of crosslink points, distribution and concentration of elastically active chains, average molecular weight between crosslinks, sol content and mass fraction of pendent chains. A comparison has been made of the properties obtained through simulation with those predicted by the fragment approach alone, which, however, gives only average properties. The Monte Carlo simulation results clearly show that loops and other cyclic structures occur in the gel. This may account for the differences observed between the results of the simulation and the fragment model in the post-gel phase. Copyright (C) 1996 Elsevier Science Ltd.

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Phase relations in the pseudoternary system CaO-CoO-SiO2 have been established at 1323 K. Three quaternary oxides were found to be stable: CaCoSi2O6 with clinopyroxene (Cpx), Ca2CoSi2O7 with melilite (Mel), and CaCoSiO4 with olivine (Ol) structures. The Gibbs energies of formation of the quaternary oxides from their component binary oxides were measured using solid-state galvanic cells incorporating yttria-stabilized zirconia as the solid electrolyte in the temperature range of 1000-1324 K. The results can be summarized as follows: CoO (rs) + CaO (rs) + 2SiO(2) (Qtz) --> CaCoSi2O6 (Cpx), Delta G(f)(0) = -117920 + 11.26T (+/-150) J/mol CoO (rs) + 2CaO (rs) + 2SiO(2) (Qtz) --> Ca2CoSi2O7 (Mel), Delta G(f)(0) = -192690 + 2.38T (+/-130) J/mol CoO (rs) + CaO (rs) + SiO2 (Qtz) --> CaCoSiO2 (Ol), Delta G(f)(0) = -100325 + 2.55T (+/-100) J/mol where rs = rock salt (NaCl) structure and Qtz = quartz. The uncertainty limits correspond to twice the standard error estimate. The experimentally observed miscibility gaps along the joins CaO-CoO and CaCoSiO4-Co2SiO4 were used to calculate the excess free energies of mixing for the solid solutions CaxCo1-xO and (CayCo1-y)CoSiO4:Delta G(E) = X(1 - X)[31975X + 26736 (1 - X)] J/mol and Delta G(E) = 23100 (+/-250) Y(1 - Y) J/mol. A T-X phase diagram for the binary CaO-CoO was computed from the thermodynamic information; the diagram agrees with information available in the literature. The computed miscibility gap along the CaCoSiO4-Co2SiO4 join is associated with a critical temperature of 1389 (+/-15) K. Stability fields for the various solid solutions and the quaternary compounds are depicted on chemical-potential diagrams for SiO2, CaO, and CoO at 1323 K.

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A differential pressure transducer with sputtered gold films as strain gauges has been designed and fabricated. The construction details of the sensing element assembly are given. The details of the strain gauge film configuration employed and the thin-film deposition process are also presented. Information on the output characteristics of the differential pressure transducer such as effect of pressure cycles on output, thermal stability, bidirectional calibration results obtained and individual gauge stability is reported.

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Thin films of Bismuth Vanadate Bi2VO5.5 (BiV) have been deposited on amorphous quartz and polycrystalline silicon substrates by r.f. sputtering technique and characterised for their structural and optical properties. The os-deposited films at room temperature are found to be amorphous and transparent over the spectral range of 0.55 mu m to 12 mu m. Post-deposition annealing at 400 degrees C in air shows the formation of the BiV crystalline phase. The optical constants namely refractive index. extinction coefficient and optical bandgap of both amorphous and crystalline films have been determined. The refractive index of the as-deposited film is around 2.4 at 0.7 mu m and drops to 2.26 at 1.56 mu m. The optical bandgap of the material has been determined from the computed values of the absorption coefficients.

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he ortho methoxycarbonyl substituent constitutes a sole exception in the ring closure reactions of ortho substituted aryl azides, as it provides no rate acceleration to this reaction. Pyrolysis of ''azido-meta-hemipinate'', an aryl azide containing such a substituent, led us to the title compound, a new azepinylidenepyridylacetic ester, whose structure has been established unambiguously by a single crystal X-ray diffraction study. This is the first report of a reaction involving both a ring expansion to an azaheptafulvalene and a ring extrusion to a pyridyl ring residue.

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Nanoporous structures are widely used for many applications and hence it Is important to investigate their thermal stability. We study the stability of spherical nanoporous aggregates using phase-field simulations that explore systematically the effect of grain boundary diffusion, surface diffusion, and grain boundary mobility on the pathways for microstructural evolution. Our simulations for different combinations of surface and GB diffusivity and GB mobility show four distinct microstructural pathways en route to 100% density: multiple dosed pores, hollow shells, hollow shells with a core, and multiple interconnected pores. The microstructures from our simulations are consistent with experimental observations in several different systems. Our results have important implications for rational synthesis of hollow nanostructures or aggregates with open pores, and for controlling the stability of nanoporous aggregates that are widely used for many applications.

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Thermal analysis and interrupted quench experiments have been carried out to study the formation of beta-FeSiAl5 and (Be-Fe)-BeSiFe2Al8 phases in Al-7Si-0.3Mg alloy with and without Be addition. In the base alloy with 0.6% Fe (without Be addition), a needle- and plate-shaped beta-phase is present in the interdendritic regions and is formed by a ternary eutectic reaction. In the Be- added alloy with 0.6% Fe, a Be-Fe phase of Chinese script and polygon shapes grows along with the primary alpha-Al dendrites, leading to superior mechanical properties. It is proposed that this Be-Fe phase is formed by a peritectic reaction. Be addition has also resulted in some grain refinement.

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Novel pyrroloisoquinolines 4 are obtained from 1-methyl-3,4-dihydroisoquinolines 1 by the action of POCl3 and DMF, along with the expected mono- and dialdehydes 2 and 3 respectively and also directly from N-acetyl-2-phenethylamines.

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Coarse BO2·xH2O (2 < x < 80) gels, free of anion contaminants react with A(OH)2 under refluxing conditions at 70�100°C giving rise to crystallites of single phased, nanometer size powders of ABO3 perovskites (A = Ba, Sr, Ca, Mg, Pb; B = Zr, Ti, Sn). Solid solutions of perovskites could be prepared from compositionally modified gels or mixtures of A(OH)2. Donor doped perovskites could also be prepared from the same method so that the products after processing are often semiconducting. Faster interfacial diffusion of A2+ ions into the gel generates the crystalline regions whose composition is controllable by the A/B ratio as well as the A(OH)2 concentration.

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Eight new vesicle-forming dimeric surfactants are synthesized: the polar headgroup separation in such dimeric amphiphiles strongly influences their vesicular thermotropic phase-transition behaviour.