Contrained linear spectral unmixing technique for regional land cover mapping using MODIS data

Over the last few decades, there has been a significant land cover (LC) change across the globe due to the increasing demand of the burgeoning population and urban sprawl. In order to take account of the change, there is a need for accurate and up- to-date LC maps. Mapping and monitoring of LC in India is being carried out at national level using multi-temporal IRS AWiFS data. Multispectral data such as IKONOS, Landsat- TM/ETM+, IRS-1C/D LISS-III/IV, AWiFS and SPOT-5, etc. have adequate spatial resolution (~ 1m to 56m) for LC mapping to generate 1:50,000 maps. However, for developing countries and those with large geographical extent, seasonal LC mapping is prohibitive with data from commercial sensors of limited spatial coverage. Superspectral data from the MODIS sensor are freely available, have better temporal (8 day composites) and spectral information. MODIS pixels typically contain a mixture of various LC types (due to coarse spatial resolution of 250, 500 and 1000 m), especially in more fragmented landscapes. In this context, linear spectral unmixing would be useful for mapping patchy land covers, such as those that characterise much of the Indian subcontinent. This work evaluates the existing unmixing technique for LC mapping using MODIS data, using end- members that are extracted through Pixel Purity Index (PPI), Scatter plot and N-dimensional visualisation. The abundance maps were generated for agriculture, built up, forest, plantations, waste land/others and water bodies. The assessment of the results using ground truth and a LISS-III classified map shows 86% overall accuracy, suggesting the potential for broad-scale applicability of the technique with superspectral data for natural resource planning and inventory applications.

Novel Algorithm for estimation of Swell Pressure of Fine Grained Soils Based on Diffuse Double Layer (DDL) Theory

Use of engineered landfills for the disposal of industrial wastes is currently a common practice. Bentonite is attracting a greater attention not only as capping and lining materials in landfills but also as buffer and backfill materials for repositories of high-level nuclear waste around the world. In the design of buffer and backfill materials, it is important to know the swelling pressures of compacted bentonite with different electrolyte solutions. The theoretical studies on swell pressure behaviour are all based on Diffuse Double Layer (DDL) theory. To establish a relation between the swell pressure and void ratio of the soil, it is necessary to calculate the mid-plane potential in the diffuse part of the interacting ionic double layers. The difficulty in these calculations is the elliptic integral involved in the relation between half space distance and mid plane potential. Several investigators circumvented this problem using indirect methods or by using cumbersome numerical techniques. In this work, a novel approach is proposed for theoretical estimations of swell pressures of fine-grained soil from the DDL theory. The proposed approach circumvents the complex computations in establishing the relationship between mid-plane potential and diffused plates’ distances in other words, between swell pressure and void ratio.

Bounds on fourth generation induced lepton flavour violating double insertions in supersymmetry

We derive bounds on leptonic double mass insertions of the type delta(l)(i4)delta(l)(4j) in four generational MSSM, using the present limits on l(i) -> l(j) + gamma. Two main features distinguish the rates of these processes in MSSM4 from MSSM3: (a) tan beta is restricted to be very small less than or similar to 3 and (b) the large masses for the fourth generation leptons. In spite of small tan beta, there is an enhancement in amplitudes with LLRR (4 delta(ll)(i4)delta(rr)(4j)) type insertions which pick up the mass of the fourth generation lepton, m(tau'). We find these bounds to be at least two orders of magnitude more stringent than those in MSSM3. (C) 2011 Elsevier B.V. All rights reserved.

Synthesis, Structure, Negative Thermal Expansion, and Photocatalytic Property of Mo Doped ZrV(2)O(7)

A new series of compounds identified in the phase diagram of ZrO(2)-V(2)O(8)-MoO(3) have been synthesized via the solution combustion method. Single crystals of one of the compounds in the series, ZrV(1.50)Mo(0.50)O(7.25), were grown by the melt-cool technique from the starting materials with double the MoO(3) quantity. The room temperature average crystal structure of the grown crystals was solved using the single crystal X-ray diffraction technique. The crystals belong to the cubic crystal system, space group Pa (3) over bar (No. 205) with a = 8.8969 (4) angstrom, V = 704.24 (6) angstrom(3), and Z = 4. The final R(1) value of 0.0213 was achieved for 288 independent reflections during the structure refinement. The Zr(4+) occupies the special position (4a) whereas V(5+) and Mo(6+) occupy two unique (8c) Wyckoff positions. Two fully occupied O atoms, (24d) and (4b), one partially occupied 0 atom (8c) have been identified for this molybdovanadate, which is a unique feature for these crystals. The structure is related to both ZrV(2)O(7) and cubic ZrMo(2)O(8). The temperature dependent single crystal studies show negative thermal expansion above 370 K. The compounds have been characterized by powder X-ray diffraction, solid-state UV-vis diffuse reflectance spectra, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The photocatalytic activity of these compounds has been investigated for the degradation of various dyes, and these compounds show specificity toward the degradation of non-azoic dyes.

A Simulation Based Study and Analysis of Double Gate Tunnel FET Performance for Low Stand-By Power Applications

The conventional metal oxide semiconductor field effect transistor (MOSFET)may not be suitable for future low standby power (LSTP) applications due to its high off-state current as the sub-threshold swing is theoretically limited to 60mV/decade. Tunnel field effect transistor (TFET) based on gate controlled band to band tunneling has attracted attention for such applications due to its extremely small sub-threshold swing (much less than 60mV/decade). This paper takes a simulation approach to gain some insight into its electrostatics and the carrier transport mechanism. Using 2D device simulations, a thorough study and analysis of the electrical parameters of the planar double gate TFET is performed. Due to excellent sub-threshold characteristics and a reverse biased structure, it offers orders of magnitude less leakage current compared to the conventional MOSFET. In this work, it is shown that the device can be scaled down to channel lengths as small as 30 nm without affecting its performance. Also, it is observed that the bulk region of the device plays a major role in determining the sub-threshold characteristics of the device and considerable improvement in performance (in terms of ION/IOFF ratio) can be achieved if the thickness of the device is reduced. An ION/IOFF ratio of 2x1012 and a minimum point sub-threshold swing of 22mV/decade is obtained.

A Low Power Frequency Multiplication Technique for Zigbee Transceiver

A low-power frequency multiplication technique, developed for ZigBee (IEEE 802.15.4) like applications is presented. We have provided an estimate for the power consumption for a given output voltage swing using our technique. The advantages and disadvantages which determine the application areas of the technique are discussed. The issues related to design, layout and process variation are also addressed. Finally, a design is presented for operation in 2.405-2.485-GHz band of ZigBee receiver. SpectreRF simulations show 30% improvement in efficiency for our circuit with regard to conversion of DC bias current to output amplitude, against a LC-VCO. To establish the low-power credentials, we have compared our circuit with an existing technique; our circuit performs better with just 1/3 of total current from supply, and uses one inductor as against three in the latter case. A test chip was implemented in UMC 0.13-mum RF process with spiral on-chip inductors and MIM (metal-insulator-metal) capacitor option.

Adaptive Filtering Technique and DSP Based Implementation for High-Speed Distance Protection

The paper presents an adaptive Fourier filtering technique and a relaying scheme based on a combination of a digital band-pass filter along with a three-sample algorithm, for applications in high-speed numerical distance protection. To enhance the performance of above-mentioned technique, a high-speed fault detector has been used. MATLAB based simulation studies show that the adaptive Fourier filtering technique provides fast tripping for near faults and security for farther faults. The digital relaying scheme based on a combination of digital band-pass filter along with three-sample data window algorithm also provides accurate and high-speed detection of faults. The paper also proposes a high performance 16-bit fixed point DSP (Texas Instruments TMS320LF2407A) processor based hardware scheme suitable for implementation of the above techniques. To evaluate the performance of the proposed relaying scheme under steady state and transient conditions, PC based menu driven relay test procedures are developed using National Instruments LabVIEW software. The test signals are generated in real time using LabVIEW compatible analog output modules. The results obtained from the simulation studies as well as hardware implementations are also presented.

Optical and structural properties of TiO2 films deposited by Sol-Gel technique

TiO2 thin films were prepared by sol gel method. The structural investigations performed by means of X- ray diffraction (XRD) technique, Scanning electronic microscopy (SEM) showed the shape structure at T=600°C. The optical constants of the deposited film were obtained from the analysis of the experimental recorded transmittance spectral data over the wavelengths range 200-3000 nm. The values of some important parameters (refractive index n, dielectric constant ε ∞ and thickness d), and the third order optical nonlinear susceptibility χ(3) of TiO2 film are determined from these spectra. It has been found that the dispersion data obey the single oscillator relation of the Wemple-DiDomenico model, from which the dispersion parameters and high – frequency dielectric constant were determined. The estimation of the corresponding band gap Eg , χ (3) and ε ∞ are 2.57 eV, 0.021 × 10-10 esu and 5.20,respectively.