“Post silicon debug of SOC designs”

Continuous advances in VLSI technology have made implementation of very complicated systems possible. Modern System-on -Chips (SoCs) have many processors, IP cores and other functional units. As a result, complete verification of whole systems before implementation is becoming infeasible; hence it is likely that these systems may have some errors after manufacturing. This increases the need to find design errors in chips after fabrication. The main challenge for post-silicon debug is the observability of the internal signals. Post-silicon debug is the problem of determining what's wrong when the fabricated chip of a new design behaves incorrectly. This problem now consumes over half of the overall verification effort on large designs, and the problem is growing worse.Traditional post-silicon debug methods concentrate on functional parts of systems and provide mechanisms to increase the observability of internal state of systems. Those methods may not be sufficient as modern SoCs have lots of blocks (processors, IP cores, etc.) which are communicating with one another and communication is another source of design errors. This tutorial will be provide an insight into various observability enhancement techniques, on chip instrumentation techniques and use of high level models to support the debug process targeting both inside blocks and communication among them. It will also cover the use of formal methods to help debug process.

Electron paramagnetic resonance study of porous silicon

Electron paramagnetic resonance studies under ambient conditions of boron‐doped porous silicon show anisotropic Zeeman (g) and hyperfine (A) tensors, signaling localization of the charge carriers due to quantum confinement.

Growth of silicon nanowires by electron beam evaporation using indium catalyst

For the first time silicon nanowires have been grown on indium (In) coated Si (100) substrates using e-beam evaporation at a low substrate temperature of 300 degrees C. Standard spectroscopic and microscopic techniques have been employed for the structural, morphological and compositional properties of as grown Si nanowires. The as grown Si nanowires have randomly oriented with an average length of 600 nm for a deposition time of 15 min. As grown Si nanowires have shown indium nanoparticle (capped) on top of it confirming the Vapor Liquid Solid (VLS) growth mechanism. Transmission Electron Microscope (TEM) measurements have revealed pure and single crystalline nature of Si nanowires. The obtained results have indicated good progress towards finding alternative catalyst to gold for the synthesis of Si nanowires. (C) 2011 Elsevier B.V. All rights reserved.

A resistometric study of solute–solute interaction in dilute aluminium–silver alloys

The experimentally determined apparent vacancy formation energy values in dilute aluminium—silver alloys showed a divergence from calculated values at higher solute fractions. This is explained in terms of a solute—solute interaction energy of the order of 0.10 ev which exists when the binding energy between a vacancy and a solute atom pair is reduced to zero.

Quasicrystals and their crystalline homologues in the Al–Mn–Cu ternary alloys

Electron diffraction and high-resolution electron microscopy have been employed to differentiate among icosahedral, decagonal and crystalline particles that occur in as-cast and rapidly solidified Al-Mn-Cu alloys. The resemblance between decagonal quasicrystals and crystals in their electron diffraction patterns is striking. The crystalline structure is based on the orthorhombic ‘Al3Mn’ structure, but also a new monoclinic phase called ‘X’ has been discovered and described here. The present observations are also closely related to the orthorhombic structures in Al60Mn11Ni4. The occurrence of fine-scale twinning and fragmentation into domains explains the complex diffraction effects.

Amorphous Hydrogenated Silicon: A Perspective on Circuit Synthesis

Abstract | Non-crystalline or glassy semiconductors are of great research interest for the fabrication of large area electronic systems such as displays and image sensors. Good uniformity over large areas, low temperature fabrication and the promise of low cost electronics on large area mechanically flexible and rigid substrates are some attractive features of these technologies. The article focusses on amorphous hydrogenated silicon thin film transistors, and reviews the problems, solutions and applications of these devices.

Creep behaviour of Fe3Al-based alloys in DO3 phase field

A study is made to bring out the effect of alloying with Cr, Ti or Mn on the creep behaviour of Fe3Al. Impression creep experiments have been carried out in the DO3 phase field. In all the alloys, power law creep behaviour is observed in the stress range covered. The stress exponent for steady state creep rate and the activation energy for creep indicate that the creep rate is controlled by the dislocation climb process. Among the alloying elements studied, addition of Ti is most effective in improving the creep resistance.

Nanostructured titanium-nickel alloys: a comparison of processing routes

Rapid solidification, mechanical alloying and devitrificaiton of precursor metallic glasses are all possible routes for the synthesis of nanocrystals and nanocomposites, though their efficacy is system dependent. In a comprehensive study of alloys across the Ti-Ni phase diagram, nanocrystals of Ti and Ni and nanocomposites of alpha -Ti and Ti sub 2 Ni, Ti sub 2 Ni and TiNi and beta -Ti and glass have been produced. By the addition of Al, devitrification of metallic glasses created by mechanical alloying led to nanocrystalline intermetallic compounds. The evolution of these nanocrystalline microstructures has been rationalized on the basis of thermodynamic and kinetic considerations involving the metastable phase diagram for this system.

Accumulative roll bonding of aluminum alloys 2219/5086 laminates: Microstructural evolution and tensile properties

The present study describes the course of microstructure evolution during accumulative roll bonding (ARB) of dissimilar aluminum alloys AA2219 and AA5086. The two alloys were sandwiched as alternate layers and rolled at 300 degrees C up to 8 passes with 50% height reduction per pass. A strong bonding between successive layers accompanied by substantial grain refinement (similar to 200-300 nm) is achieved after 8 passes of ARB. The processing schedule has successfully maintained the iso-strain condition up to 6 cycles between the two alloys. Afterwards, the fracture and fragmentation of AA5086 layers dominate the microstructure evolution. Mechanical properties of the 8 pass ARB processed material were evaluated in comparison to the two starting alloy sheets via room temperature tensile tests along the rolling direction. The strength of the 8 pass ARB processed material lies between that of the two starting alloys while the ductility decreases after ARB than that of the two constituent starting alloys. These differences in mechanical behavior have been attributed to the microstructural aspects of the individual layer and the fragmentation process. (C) 2011 Elsevier Ltd. All rights reserved.

Physics-Based Band Gap Model for Relaxed and Strained 100] Silicon Nanowires

In this paper, we propose a physics-based simplified analytical model of the energy band gap and electron effective mass in a relaxed and strained rectangular 100] silicon nanowires (SiNWs). Our proposed formulation is based on the effective mass approximation for the nondegenerate two-band model and 4 x 4 Luttinger Hamiltonian for energy dispersion relation of conduction band electrons and the valence band heavy and light holes, respectively. Using this, we demonstrate the effect of the uniaxial strain applied along 100]-direction and a biaxial strain, which is assumed to be decomposed from a hydrostatic deformation along 001] followed by a uniaxial one along the 100]-direction, respectively, on both the band gap and the transport and subband electron effective masses in SiNW. Our analytical model is in good agreement with the extracted data using the extended-Huckel-method-based numerical simulations over a wide range of device dimensions and applied strain.

Microstructure and texture evolution during accumulative roll bonding of aluminium alloys AA2219/AA5086 composite laminates

Accumulative roll bonding of two aluminium alloys, AA2219 and AA5086 was carried out up to 8 passes. During the course of ARB, the deformation inhomogeneity between the two alloy layers results in interfacial instability after the 4th pass, necking of the AA5086 layers after the 6th pass and fracture along the necked regions after the 7th and 8th pass. The EBSD analysis shows deformation bands along the interfaces after 8 passes of ARB. The ARB-processed materials predominantly show characteristic deformation texture components. The weak texture after the 2nd pass results from the combination of a weakly-textured starting AA2219 layer and a strongly-textured starting AA5086 layer. A strong deformation texture forms due to the high imposed strain after a higher number of ARB passes. Subgrain formation and related shear banding induces copper/S components in the case of the small elongated grains, while planar slip leads to the formation of brass component in the large elongated grains.

Efficient generation and guiding of megaampere relativistic electron current by silicon nanowires

We demonstrate 30 times enhanced flux of relativistic electrons by a silicon nanowire coated target excited by 30 fs, 800 nm laser pulses at an intensity of 3 x 10(18) W cm(-2). A measurement of the megaampere electron current via induced megagauss magnetic field supports the enhancement feature observed in the electron energy spectrum. The relativistic electrons generated at the front of nanowire coated surface are shown to travel efficiently over 500 mu m in the insulating substrate. The enhanced hot electron temperature is explained using a simple model and is supported by recent simulations. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4729010]

Synthesis and characterization of nano silicon and titanium nitride powders using atmospheric microwave plasma technique

We have demonstrated a simple, scalable and inexpensive method based on microwave plasma for synthesizing 5 to 10 g/h of nanomaterials. Luminescent nano silicon particles were synthesized by homogenous nucleation of silicon vapour produced by the radial injection of silicon tetrachloride vapour and nano titanium nitride was synthesized by using liquid titanium tetrachloride as the precursor. The synthesized nano silicon and titanium nitride powders were characterized by XRD, XPS, TEM, SEM and BET. The characterization techniques indicated that the synthesized powders were indeed crystalline nanomaterials.

Effect of selenium addition on the GeTe phase change memory alloys

Compositional dependent investigations of the bulk GeTe chalcogenides alloys added with different selenium concentrations are carried out by X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), electron probe micro-analyzer (EPMA) and differential scanning calorimetry (DSC). The measurements reveal that GeTe crystals are predominant in alloys up to 0.20 at.% of Se content indicating interstitial occupancy of Se in the Ge vacancies. Raman modes in the GeTe alloys changes to GeSe modes with the addition of Se. Amorphousness in the alloy increases with increase of Se and 0.50 at.% Se alloy forms a homogeneous amorphous phase with a mixture of Ge-Se and Te-Se bonds. Structural changes are explained with the help of bond theory of solids. Crystallization temperature is found to be increasing with increase of Se, which will enable the amorphous stability. For the optimum 0.50 at.% Se alloy, the melting temperature has reduced which will reduce the RESET current requirement for the phase change memory applications. (C) 2012 Elsevier B.V. All rights reserved.