Piecewise Linearization Technique for Compact Charge Modeling of Independent DG MOSFET

Charge linearization techniques have been used over the years in advanced compact models for bulk and double-gate MOSFETs in order to approximate the position along the channel as a quadratic function of the surface potential (or inversion charge densities) so that the terminal charges can be expressed as a compact closed-form function of source and drain end surface potentials (or inversion charge densities). In this paper, in case of the independent double-gate MOSFETs, we show that the same technique could be used to model the terminal charges quite accurately only when the 1-D Poisson solution along the channel is fully hyperbolic in nature or the effective gate voltages are same. However, for other bias conditions, it leads to significant error in terminal charge computation. We further demonstrate that the amount of nonlinearity that prevails between the surface potentials along the channel actually dictates if the conventional charge linearization technique could be applied for a particular bias condition or not. Taking into account this nonlinearity, we propose a compact charge model, which is based on a novel piecewise linearization technique and shows excellent agreement with numerical and Technology Computer-Aided Design (TCAD) simulations for all bias conditions and also preserves the source/drain symmetry which is essential for Radio Frequency (RF) circuit design. The model is implemented in a professional circuit simulator through Verilog-A, and simulation examples for different circuits verify good model convergence.

Geometrically non-linear dynamics of composite four-bar mechanisms

This work intends to demonstrate the importance of a geometrically nonlinear cross-sectional analysis of certain composite beam-based four-bar mechanisms in predicting system dynamic characteristics. All component bars of the mechanism are made of fiber reinforced laminates and have thin rectangular cross-sections. They could, in general, be pre-twisted and/or possess initial curvature, either by design or by defect. They are linked to each other by means of revolute joints. We restrict ourselves to linear materials with small strains within each elastic body (beam). Each component of the mechanism is modeled as a beam based on geometrically non-linear 3-D elasticity theory. The component problems are thus split into 2-D analyses of reference beam cross-sections and non-linear 1-D analyses along the three beam reference curves. For the thin rectangular cross-sections considered here, the 2-D cross-sectional non-linearity is also overwhelming. This can be perceived from the fact that such sections constitute a limiting case between thin-walled open and closed sections, thus inviting the non-linear phenomena observed in both. The strong elastic couplings of anisotropic composite laminates complicate the model further. However, a powerful mathematical tool called the Variational Asymptotic Method (VAM) not only enables such a dimensional reduction, but also provides asymptotically correct analytical solutions to the non-linear cross-sectional analysis. Such closed-form solutions are used here in conjunction with numerical techniques for the rest of the problem to predict multi-body dynamic responses more quickly and accurately than would otherwise be possible. The analysis methodology can be viewed as a three-step procedure: First, the cross-sectional properties of each bar of the mechanism is determined analytically based on an asymptotic procedure, starting from Classical Laminated Shell Theory (CLST) and taking advantage of its thin strip geometry. Second, the dynamic response of the non-linear, flexible four-bar mechanism is simulated by treating each bar as a 1-D beam, discretized using finite elements, and employing energy-preserving and -decaying time integration schemes for unconditional stability. Finally, local 3-D deformations and stresses in the entire system are recovered, based on the 1-D responses predicted in the previous step. With the model, tools and procedure in place, we identify and investigate a few four-bar mechanism problems where the cross-sectional non-linearities are significant in predicting better and critical system dynamic characteristics. This is carried out by varying stacking sequences (i.e. the arrangement of ply orientations within a laminate) and material properties, and speculating on the dominating diagonal and coupling terms in the closed-form non-linear beam stiffness matrix. A numerical example is presented which illustrates the importance of 2-D cross-sectional non-linearities and the behavior of the system is also observed by using commercial software (I-DEAS + NASTRAN + ADAMS). (C) 2012 Elsevier Ltd. All rights reserved.

Surrogate based design optimisation of composite aerofoil cross-section for helicopter vibration reduction

Design optimisation of a helicopter rotor blade is performed. The objective is to reduce helicopter vibration and constraints are put on frequencies and aeroelastic stability. The ply angles of the D-spar and skin of the composite rotor blade with NACA 0015 aerofoil section are considered as design variables. Polynomial response surfaces and space filling experimental designs are used to generate surrogate models of the objective function with respect to cross-section properties. The stacking sequence corresponding to the optimal cross-section is found using a real-coded genetic algorithm. Ply angle discretisation of 1 degrees, 15 degrees, 30 degrees and 45 degrees are used. The mean value of the objective function is used to find the optimal blade designs and the resulting designs are tested for variance. The optimal designs show a vibration reduction of 26% to 33% from the baseline design. A substantial reduction in vibration and an aeroelastically stable blade is obtained even after accounting for composite material uncertainty.

Effect of Oxygen Pressure on Structural and Magnetic Properties of YIG Thin Films

The effect of oxygen pressure (P-O2) on the Yttrium Iron Garnet (YIG) thin films were grown on silicon substrate by rf sputtering method was studied. The as-deposited films at 300K were amorphous in nature. The crystallization of these films was achieved by annealing at a temperature of 800 degrees C/1hr in air. The structural, microstructural and magnetic properties were found to be dependent on P-O2.

Evolution of Microstructure During Solidification of an Aluminium Alloy Under Stirring

In the present work, the evolution of microstructure during solidification of A356 alloy under stirring is performed experimentally in a high temperature concentric viscometer. The stirring during solidification results a semisolid slurry in the annular space between the cylinders. This slurry is removed periodically during processing using a vacuum removal quartz tube and quenched in water for micrograph analysis. From the micrograph analysis, the shape, stacking arrangement and corresponding microstructural evolution of the suspended primary particles in the slurry are studied. The work also predicts the fraction of solid present in the extracted slurry. Finally, the effect of microstructure and the solid-fraction on the slurry viscosity is presented.

A novel gas flow sensing application using piezoelectric ZnO thin films deposited on Phynox alloy

We report on the novel flow sensing application of piezoelectric ZnO thin film deposited on Phynox alloy sensing element. Characterization of piezoelectric ZnO films deposited on Phynox (Elgiloy) substrate at different RF powers is discussed. ZnO films deposited at RF power of 100W were found to have fine c-axis orientation, possesses excellent surface morphology with lower rms surface roughness of 1.87 nm and maximum d(31) coefficient value 4.7 pm V-1. The thin cantilever strip of Phynox alloy with ZnO film as a sensing layer for flow sensing has been tested for flow rates ranging from 2 to 18 L min(-1). A detailed theoretical analysis of the experimental set-up showing the relationship between output voltage and force at a particular flow rate has been discussed. The sensitivity of now sensing element is similar to 18 mV/(L min(-1)) and typical response time is of the order of 20 m s. The sensing element is calibrated using in-house developed testing set-up. (C) 2012 Elsevier B.V. All rights reserved.

Unusual Salt-Induced Color Modulation through Aggregation-Induced Emission Switching of a Bis-cationic Phenylenedivinylene-Based pi Hydrogelator

The synthesis, hydrogelation, and aggregation-induced emission switching of the phenylenedivinylene bis-N-octyl pyridinium salt is described. Hydrogelation occurs as a consequence of pi-stacking, van der Waals, and electrostatic interactions that lead to a high gel melting temperature and significant mechanical properties at a very low weight percentage of the gelator. A morphology transition from fiber-to-coil-to-tube was observed depending on the concentration of the gelator. Variation in the added salt type, salt concentrations, or temperature profoundly influenced the order of aggregation of the gelator molecules in aqueous solution. Formation of a novel chromophore assembly in this way leads to an aggregation-induced switch of the emission colors. The emission color switches from sky blue to white to orange depending upon the extent of aggregation through mere addition of external inorganic salts. Remarkably, the salt effect on the assembly of such cationic phenylenedivinylenes in water follow the behavior predicted from the well-known Hofmeister effects. Mechanistic insights for these aggregation processes were obtained through the counterion exchange studies. The aggregation-induced emission switching that leads to a room-temperature white-light emission from a single chromophore in a single solvent (water) is highly promising for optoelectronic applications.

Graphene transistors for CMOS applications: opportunities and challenges

In the last decade, there has been a tremendous interest in Graphene transistors. The greatest advantage for CMOS nanoelectronics applications is the fact that Graphene is compatible with planar CMOS technology and potentially offers excellent short channel properties. Because of the zero bandgap, it will not be possible to turn off the MOSFET efficiently and hence the typical on current to off current ratio (Ion/Ioff) has been less than 10. Several techniques have been proposed to open the bandgap in Graphene. It has been demonstrated, both theoretically and experimentally, that Graphene Nanoribbons (GNR) show a bandgap which is inversely proportional to their width. GNRs with about 20 nm width have bandgaps in the range of 100meV. But it is very difficult to obtain GNRs with well defined edges. An alternate technique to open the band gap is to use bilayer Graphene (BLG), with an asymmetric bias applied in the direction perpendicular to their plane. Another important CMOS metric, the subthreshold slope is also limited by the inability to turn off the transistor. However, these devices could be attractive for RF CMOS applications. But even for analog and RF applications the non-saturating behavior of the drain current can be an issue. Although some studies have reported current saturation, the mechanisms are still not very clear. In this talk we present some of our recent findings, based on simulations and experiments, and propose possible solutions to obtain high on current to off current ratio. A detailed study on high field transport in grapheme transistors, relevant for analog and RF applications will also be presented.

Low-thermal-budget solution processing of thin films of zinc ferrite and other complex oxides

Further miniaturization of magnetic and electronic devices demands thin films of advanced nanomaterials with unique properties. Spinel ferrites have been studied extensively owing to their interesting magnetic and electrical properties coupled with stability against oxidation. Being an important ferrospinel, zinc ferrite has wide applications in the biological (MRI) and electronics (RF-CMOS) arenas. The performance of an oxide like ZnFe2O4 depends on stoichiometry (defect structure), and technological applications require thin films of high density, low porosity and controlled microstructure, which depend on the preparation process. While there are many methods for the synthesis of polycrystalline ZnFe2O4 powder, few methods exist for the deposition of its thin films, where prolonged processing at elevated temperature is not required. We report a novel, microwave-assisted, low temperature (<100°C) deposition process that is conducted in the liquid medium, developed for obtaining high quality, polycrystalline ZnFe2O4 thin films on technologically important substrates like Si(100). An environment-friendly solvent (ethanol) and non-hazardous oxide precursors (β-diketonates of Zn and Fe in 1:2 molar ratio), forming a solution together, is subjected to irradiation in a domestic microwave oven (2.45 GHz) for a few minutes, leading to reactions which result in the deposition of ZnFe2O4 films on Si (100) substrates suspended in the solution. Selected surfactants added to the reactant solution in optimum concentration can be used to control film microstructure. The nominal temperature of the irradiated solution, i.e., film deposition temperature, seldom exceeds 100°C, thus sharply lowering the thermal budget. Surface roughness and uniformity of large area depositions (50x50 mm2) are controlled by tweaking the concentration of the mother solution. Thickness of the films thus grown on Si (100) within 5 min of microwave irradiation can be as high as several microns. The present process, not requiring a vacuum system, carries a very low thermal budget and, together with a proper choice of solvents, is compatible with CMOS integration. This novel solution-based process for depositing highly resistive, adherent, smooth ferrimagnetic films on Si (100) is promising to RF engineers for the fabrication of passive circuit components. It is readily extended to a wide variety of functional oxide films.

Electronically tunable zero order resonator based on CRLH-TLs

Composite Right/Left Handed (CRLH) transmission line (TL) based electronically tunable 1.5 cell zero order resonator (ZOR) is demonstrated with microstrip technology by use of varactors. A novel mechanism for DC bias for the varactor is proposed. This is achieved by patterning the ground plane of microstrip thereby reducing the complexity of DC feed mechanism. This approach also mitigates the effect of parasitics arising from DC feed choke appearing in the RF signal path.

Material uncertainty effect on vibration control of smart composite plate using polynomial chaos expansion

Polynomial Chaos Expansion with Latin Hypercube sampling is used to study the effect of material uncertainty on vibration control of a smart composite plate with piezoelectric sensors/actuators. Composite material properties and piezoelectric coefficients are considered as independent and normally distributed random variables. Numerical results show substantial variation in structural dynamic response due to material uncertainty of active vibration control system. This change in response due to material uncertainty can be compensated by actively tuning the feedback control system. Numerical results also show variation in dispersion of dynamic characteristics and control parameters with respect to ply angle and stacking sequence.

Flexible Phynox Alloy with Integrated Piezoelectric Thin Film for Micro Actuation Application

In this paper, we report on the application aspect of piezoelectric ZnO thin film deposited on flexible phynox alloy substrate. Highly crystalline piezoelectric ZnO thin films were deposited by RF reactive magnetron sputtering and were characterized by XRD, SEM, AFM analysis. Also, the effective d(33) coefficient value measurement was performed. The actuator element is a circular diaphragm of phynox alloy on to which piezoelectric ZnO thin film was deposited. ZnO film deposited actuator element was firmly fixed inside a suitable concave perspex mounting designed specifically for micro actuation purpose. The actuator element was excited at different frequencies for the supply voltages of 2V, 5V and 8V. Maximum deflection of the ZnO film deposited diaphragm was measured to be 1.25 mu m at 100 Hz for the supply voltage of 8V. The developed micro actuator has the potential to be used as a micro pump for pumping nano liters to micro liters of fluids per minute for numerous biomedical and aerospace applications.

Substrate impact on the growth of InN nanostructures by droplet epitaxy

The substrate effect on InN nanostructures grown by droplet epitaxy has been studied. InN nanostructures were fabricated on Si(111), silicon nitride/Si(111), AlN/Si(111) and Ge(100) substrates by droplet epitaxy using an RF plasma nitrogen source. The morphologies of InN nanostructures were investigated by field emission scanning electron microscopy (FESEM). The chemical bonding configurations of InN nanostructures were examined by x-ray photoelectron spectroscopy (XPS). Photoluminescence spectrum slightly blue shifted compared to the bulk InN, indicating a strong Burstein-Moss effect due to the presence of high electron concentration in the InN dots.

Designed three-stranded beta-sheet in an alpha/beta hybrid peptide

The incorporation of beta-amino acid residues into the antiparallel beta-strand segments of a multi-stranded beta-sheet peptide is demonstrated for a 19-residue peptide, Boc-LV(beta)FV(D)PGL(beta)FVVL(D)PGLVL(beta)FVV-OMe (BBH19). Two centrally positioned (D)Pro-Gly segments facilitate formation of a stable three-stranded beta-sheet, in which beta-phenylalanine ((beta)Phe) residues occur at facing positions 3, 8 and 17. Structure determination in methanol solution is accomplished by using NMR-derived restraints obtained from NOEs, temperature dependence of amide NH chemical shifts, rates of H/D exchange of amide protons and vicinal coupling constants. The data are consistent with a conformationally well-defined three-stranded beta-sheet structure in solution. Cross-strand interactions between (beta)Phe3/(beta)Phe17 and (beta)Phe3/Val15 residues define orientations of these side-chains. The observation of close contact distances between the side-chains on the N- and C-terminal strands of the three-stranded beta-sheet provides strong support for the designed structure. Evidence is presented for multiple side-chain conformations from an analysis of NOE data. An unusual observation of the disappearance of the Gly NH resonances upon prolonged storage in methanol is rationalised on the basis of a slow aggregation step, resulting in stacking of three-stranded beta-sheet structures, which in turn influences the conformational interconversion between type I' and type II' beta-turns at the two (D)Pro-Gly segments. Experimental evidence for these processes is presented. The decapeptide fragment Boc-LV(beta)FV(D)PGL(beta)FVV-OMe (BBH10), which has been previously characterized as a type I' beta-turn nucleated hairpin, is shown to favour a type II' beta-turn conformation in solution, supporting the occurrence of conformational interconversion at the turn segments in these hairpin and sheet structures.

Structural, electrical and dielectric properties of sputtered TiO2 films for Al/TiO2/Si capacitors

Metal-oxide semiconductor capacitors based on titanium dioxide (TiO2) gate dielectrics were prepared by RF magnetron sputtering technique. The deposited films were post-annealed at temperatures in the range 773-1173 K in air for 1 hour. The effect of annealing temperature on the structural properties of TiO2 films was investigated by X-ray diffraction and Raman spectroscopy, the surface morphology was studied by atomic force microscopy (AFM) and the electrical properties of Al/TiO2/p-Si structure were measured recording capacitance-voltage and current-voltage characteristics. The as-deposited films and the films annealed at temperatures lower than 773 K formed in the anatase phase, while those annealed at temperatures higher than 973 K were made of mixtures of the rutile and anatase phases. FTIR analysis revealed that, in the case of films annealed at 1173 K, an interfacial layer had formed, thereby reducing the dielectric constant. The dielectric constant of the as-deposited films was 14 and increased from 25 to 50 with increases in the annealing temperature from 773 to 973 K. The leakage current density of as-deposited films was 1.7 x 10(-5) and decreased from 4.7 X 10(-6) to 3.5 x 10(-9) A/cm(2) with increases in the annealing temperature from 773 to 1173 K. The electrical conduction in the Al/TiO2/p-Si structures was studied on the basis of the plots of Schottky emission, Poole-Frenkel emission and Fowler-Nordheim tunnelling. The effect of structural changes on the current-voltage and capacitance-voltage characteristics of Al/TiO2/p-Si capacitors was also discussed.