Transition due to base roughness in a dense granular flow down an inclined plane

Particle simulations based on the discrete element method are used to examine the effect of base roughness on the granular flow down an inclined plane. The base is composed of a random configuration of fixed particles, and the base roughness is decreased by decreasing the ratio of diameters of the base and moving particles. A discontinuous transition from a disordered to an ordered flow state is observed when the ratio of diameters of base and moving particles is decreased below a critical value. The ordered flowing state consists of hexagonally close packed layers of particles sliding over each other. The ordered state is denser (higher volume fraction) and has a lower coordination number than the disordered state, and there are discontinuous changes in both the volume fraction and the coordination number at transition. The Bagnold law, which states that the stress is proportional to the square of the strain rate, is valid in both states. However, the Bagnold coefficients in the ordered flowing state are lower, by more than two orders of magnitude, in comparison to those of the disordered state. The critical ratio of base and moving particle diameters is independent of the angle of inclination, and varies very little when the height of the flowing layer is doubled from about 35 to about 70 particle diameters. While flow in the disordered state ceases when the angle of inclination decreases below 20 degrees, there is flow in the ordered state at lower angles of inclination upto 14 degrees. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4710543]

Study of n-ZnO/p-Si (100) thin film heterojunctions by pulsed laser deposition without buffer layer

ZnO/Si heterojunctions were fabricated by growing ZnO thin films on p-type Si (100) substrate by pulsed laser deposition without buffer layers. The crystallinity of the heterojunction was analyzed by high resolution X-ray diffraction and atomic force microscopy. The optical quality of the film was analyzed by room temperature (RT) photoluminescence measurements. The high intense band to band emission confirmed the high quality of the ZnO thin films on Si. The electrical properties of the junction were studied by temperature dependent current-voltage measurements and RT capacitance-voltage (C-V) analysis. The charge carrier concentration and the barrier height (BH) were calculated, to be 5.6x10(19) cm(-3) and 0.6 eV respectively from the C-V plot. The BH and ideality factor, calculated using the thermionic emission (TE) model, were found to be highly temperature dependent. We observed a much lower value in Richardson constant, 5.19x10(-7)A/cm(2) K-2 than the theoretical value (32 A/cm(2) K-2) for ZnO. This analysis revealed the existence of a Gaussian distribution (GD) with a standard deviation of sigma(2)=0.035 V. By implementing the GD to the TE, the values of BH and Richardson constant were obtained as 1.3 eV and 39.97 A/cm(2) K-2 respectively from the modified Richardson plot. The obtained Richardson constant value is close to the theoretical value for n-ZnO. These high quality heterojunctions can be used for solar cell applications. (C) 2012 Elsevier B.V. All rights reserved.

Carbon dioxide detection by boron nitride nanotubes

The effect of gas molecule adsorption is investigated on the density of states of (9,0) zigzag boron nitride nanotube within a random tight-binding Hamiltonian model. The Green function approach and coherent potential approximation have been implemented. The results show that the adsorption of carbon dioxide gas molecules by boron atoms only leads to a donor type semiconductor while the adsorption by nitrogen atoms only leads to an acceptor. Since the gas molecules are adsorbed by both boron and nitrogen atoms, a reduction of the band gap is found. In all cases, increasing the gas concentration causes an increase in the height of the peaks in the band gap. This is due to an increasing charge carrier concentration induced by adsorbed gas molecules.

Current transport in nonpolar a-plane InN/GaN eterostructures Schottky junction

The temperature dependent current transport properties of nonpolar a-plane (11 2 0) InN/GaN heterostructure Schottky junction were investigated. The barrier height ( b) and ideally factor (η) estimated from the thermionic emission (TE) model were found to be temperature dependent in nature. The conventional Richardson plot of the ln(I s/T 2) versus 1/kT has two regions: the first region (150-300 K) and the second region (350-500 K). The values of Richardson constant (A +) obtained from this plot are found to be lower than the theoretical value of n-type GaN. The variation in the barrier heights was explained by a double Gaussian distribution with mean barrier height values ( b ) of 1.17 and 0.69 eV with standard deviation (� s) of 0.17 and 0.098 V, respectively. The modified Richardson plot in the temperature range 350-500 K gives the Richardson constant which is close to the theoretical value of n-type GaN. Hence, the current mechanism is explained by TE by assuming the Gaussian distribution of barrier height. At low temperature 150-300 K, the absence of temperature dependent tunneling parameters indicates the tunneling assisted current transport mechanism. © 2012 American Institute of Physics.

Effect of carrier concentration of InN on the transport behavior of InN/GaN heterostructure based Schottky junctions

We present the study involving the dependence of carrier concentration of InN films, grown on GaN templates using the plasma assisted molecular beam epitaxy system, on growth temperature. The influence of InN carrier concentration on the electrical transport behavior of InN/GaN heterostructure based Schottky junctions is also discussed. The optical absorption edge of InN film was found to be strongly dependent on carrier concentration, and was described by Kane's k.p model, with non-parabolic dispersion relation for carrier in the conduction band. The position of the Fermi-level in InN films was modulated by the carrier concentration in the InN films. The barrier height of the heterojunctions as estimated from I-V characteristic was also found to be dependent on the carrier concentration of InN. (C) 2012 Elsevier Ltd. All rights reserved.

Electrical transport studies of MBE grown InGaN/Si isotype heterojunctions

The temperature dependent electrical transport behavior of n-n InGaN/Si heterostructures grown by plasma-assisted MBE was studied. Structural characteristics of the as-grown InGaN epilayers were evaluated high resolution X-ray diffraction and composition of InGaN was estimated from photoluminescence spectra using standard Vegard's law. Current density-voltage plots (J-V-T) revealed that the ideality factor (eta) and Schottky barrier height (SBH) (Phi(b)) are temperature dependent and the incorrect values of the Richardson's constant (A**) produced, suggests an inhomogeneous barrier at the heterostructure interface. The higher value of the ideality factor compared to the ideal value and its temperature dependence suggest that the current transport is mainly dominated by thermionic field emission. (C) 2012 Elsevier B.V. All rights reserved.

Synthesis of zinc oxide porous structures by anodization with water as an electrolyte

We report a simple, reliable and one-step method of synthesizing ZnO porous structures at room temperature by anodization of zinc (Zn) sheet with water as an electrolyte and graphite as a counter electrode. We observed that the de-ionized (DI) water used in the experiment is slightly acidic (pH=5.8), which is due to the dissolution of carbon dioxide from the atmosphere forming carbonic acid. Porous ZnO is characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy and photoluminescence (PL) studies. The current-transient measurement is carried out using a Gamry Instruments Reference 3000 and the thickness of the deposited films is measured using a Dektak surface profilometer. The PL, Raman and X-ray photoelectron spectroscopy are used to confirm the presence of ZnO phase. We have demonstrated that the hybrid structures of ZnO and poly (3,4-ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS) exhibit good rectifying characteristics. The evaluated barrier height and the ideality factor are 0.45 eV and 3.6, respectively.

On the Influence of Neighboring Conducting Objects on the Induced Currents in Simple Down Conductors Due to Nearby Lightning Strike

A lightning strike in the neighborhood can induce significant currents in tall down conductors. Though the magnitude of induced current in this case is much smaller than that encountered during a direct strike, the probability of occurrence and the frequency content is higher. In view of this, appropriate knowledge on the characteristics of such induced currents is relevant for the scrutiny of the recorded currents and in the evaluation of interference to the electrical and electronic system in the vicinity. Previously, a study was carried out on characteristics of induced currents assuming ideal conditions, that there were no influencing objects in the vicinity of the down conductor and channel. However, some influencing conducting bodies will always be present, such as trees, electricity and communication towers, buildings, and other elevated objects that can affect the induced currents in a down conductor. The present work is carried out to understand the influence of nearby conducting objects on the characteristics of induced currents due to a strike to ground in the vicinity of a tall down conductor. For the study, an electromagnetic model is employed to model the down conductor, channel, and neighboring conducting objects, and Numerical Electromagnetic Code-2 is used for numerical field computations. Neighboring objects of different heights, of different shapes, and at different locations are considered. It is found that the neighboring objects have significant influence on the magnitude and nature of induced currents in a down conductor when the height of the nearby conducting object is comparable to that of the down conductor.

Ganga-Brahmaputra river discharge from Jason-2 radar altimetry: An update to the long-term satellite-derived estimates of continental freshwater forcing flux into the Bay of Bengal

This paper discusses the use of Jason-2 radar altimeter measurements to estimate the Ganga-Brahmaputra surface freshwater flux into the Bay of Bengal for the period mid-2008 to December 2011. A previous estimate was generated for 1993-2008 using TOPEX-Poseidon, ERS-2 and ENVISAT, and is now extended using Jason-2. To take full advantages of the new availability of in situ rating curves, the processing scheme is adapted and the adjustments of the methodology are discussed here. First, using a large sample of in situ river height measurements, we estimate the standard error of Jason-2-derived water levels over the Ganga and the Brahmaputra to be respectively of 0.28 m and 0.19 m, or less than similar to 4% of the annual peak-to-peak variations of these two rivers. Using the in situ rating curves between water levels and river discharges, we show that Jason-2 accurately infers Ganga and Brahmaputra instantaneous discharges for 2008-2011 with mean errors ranging from similar to 2180 m(3)/s (6.5%) over the Brahmaputra to similar to 1458 m(3)/s (13%) over the Ganga. The combined Ganga-Brahmaputra monthly discharges meet the requirements of acceptable accuracy (15-20%) with a mean error of similar to 16% for 2009-2011 and similar to 17% for 1993-2011. The Ganga-Brahmaputra monthly discharge at the river mouths is then presented, showing a marked interannual variability with a standard deviation of similar to 12500 m(3)/s, much larger than the data set uncertainty. Finally, using in situ sea surface salinity observations, we illustrate the possible impact of extreme continental freshwater discharge event on the northern Bay of Bengal as observed in 2008.

Performance of established native seedlings in relation to invasive Lantana camara, rainfall and species' habitat preferences in a seasonally dry tropical forest

Native species' response to the presence of invasive species is context specific. This response cannot be studied in isolation from the prevailing environmental stresses in invaded habitats such as seasonal drought. We investigated the combined effects of an invasive shrub Lantana camara L. (lantana), seasonal rainfall and species' microsite preferences on the growth and survival of 1,105 naturally established seedlings of native trees and shrubs in a seasonally dry tropical forest. Individuals were followed from April 2008 to February 2010, and growth and survival measured in relation to lantana density, seasonality of rainfall and species characteristics in a 50-ha permanent forest plot located in Mudumalai, southern India. We used a mixed effects modelling approach to examine seedling growth and generalized linear models to examine seedling survival. The overall relative height growth rate of established seedlings was found to be very low irrespective of the presence or absence of dense lantana. 22-month growth rate of dry forest species was lower under dense lantana while moist forest species were not affected by the presence of lantana thickets. 4-month growth rates of all species increased with increasing inter-census rainfall. Community results may be influenced by responses of the most abundant species, Catunaregam spinosa, whose growth rates were always lower under dense lantana. Overall seedling survival was high, increased with increasing rainfall and was higher for species with dry forest preference than for species with moist forest preference. The high survival rates of naturally established seedlings combined with their basal sprouting ability in this forest could enable the persistence of woody species in the face of invasive species.

Application of a modified jogged-screw model for creep of titanium aluminides: evaluation of the key substructural parameters

A modification of the jogged-screw model has been adopted recently by the authors to explain observations of 1/2[110]-type jogged-screw dislocations in equiaxed Ti-48Al under creep conditions. The aim of this study has been to verify and validate the parameters and functional dependencies that have been assumed in this previous work. The original solution has been reformulated to take into account the finite length of the moving jog. This is a better approximation of the tall jog. The substructural model parameters have been further investigated in light of the Finite Length Moving Line (FLML) source approximation. The original model assumes that the critical jog height (beyond which the jog is not dragged) is inversely proportional to the applied stress. By accounting for the fact that there are three competing mechanisms (jog dragging, dipole dragging, dipole bypass) possible, we can arrive at a modified critical jog height. The critical jog height was found to be more strongly stress dependent than assumed previously. The original model assumes the jog spacing to be invariant over the stress range. However, dynamic simulation using a line tension model has shown that the jog spacing is inversely proportional to the applied stress. This has also been confirmed by TEM measurements of jog spacings over a range of stresses. Taylor's expression assumed previously to provide the dependence of dislocation density on the applied stress, has now been confirmed by actual dislocation density measurements. Combining all of these parameters and dependencies, derived both from experiment and theory, leads to an excellent prediction of creep rates and stress exponents. The further application of this model to other materials, and the important role of atomistic and dislocation dynamics simulations in its continued development is also discussed.

Effect of leachate recirculation and extent of degradation on the stability of bioreactor landfill slopes

The stability of a bioreactor landfill slope is influenced by the quantity and method of leachate recirculation as well as on the degree of decomposition. Other factors include properties variation of waste material and geometrical configurations, i.e., height and slope of landfills. Conventionally, the stability of slopes is evaluated using factor of safety approach, in which the variability in the engineering properties of MSW is not considered directly and stability issues are resolved from past experiences and good engineering judgments. On the other hand, probabilistic approach considers variability in mathematical framework and provides stability in a rational manner that helps in decision making. The objective of the present study is to perform a parametric study on the stability of a bioreactor landfill slope in probabilistic framework considering important influencing factors, such as, variation in MSW properties, amount of leachate recirculation, and age of degradation, in a systematic manner. The results are discussed in the light of existing relevant regulations, design and operation issues.

Influence of tool rotation speed and feed rate on the forming limit of friction stir welded AA6061-T6 sheets

In this study, the influence of tool rotation speed and feed rate on the forming limit of friction stir welded Al 6061-T651 sheets has been investigated. The forming limit curve was evaluated by limit dome height test performed on all the friction stir welded sheets. The welding trials were conducted at a tool rotation speed of 1300 and 1400 r/min and feed rate of 90 and 100 mm/min. A third trial of welding was performed at a rotational speed of 1500 r/min and feed rate 120 mm/min. It is found that with increase in the tool rotation speed, from 1300 to 1400 r/min, for a constant feed rate, the forming limit of friction stir welded blank has improved and with increase in feed rate, from 90 to 100 mm/min, for a constant tool rotation speed, it has decreased. The forming limit of friction stir welded sheets is better than unwelded sheets. The thickness gradient after forming is severe in the cases of friction stir welded blanks made at higher feed rate and lower rotation speed. The strain hardening exponent of weld (n) increases with increase in tool rotation speed and it decreases with increase in feed rate. It has been demonstrated that the change in the forming limit of friction stir welded sheets with respect to welding parameters is due to the thickness distribution severity and strain hardening exponent of the weld region during forming. There is not much variation in the dome height among the friction stir welded sheets tested. When compared with unwelded sheets, dome height of friction stir welded sheets is higher in near-plane-strain condition, but it is lesser in stretching strain paths.