268 resultados para Transmission electronic microscopies


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A second order transfer function with two poles and two zeros exhibits a step response characterized by a sudden rise to the steady state value, followed by oscillations around this steady state. With proper choice of the coefficients, it is possible to obtain transfer functions suitable for pulse transmission purposes.

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Information forms the basis of modern technology. To meet the ever-increasing demand for information, means have to be devised for a more efficient and better-equipped technology to intelligibly process data. Advances in photonics have made their impact on each of the four key applications in information processing, i.e., acquisition, transmission, storage and processing of information. The inherent advantages of ultrahigh bandwidth, high speed and low-loss transmission has already established fiber-optics as the backbone of communication technology. However, the optics to electronics inter-conversion at the transmitter and receiver ends severely limits both the speed and bit rate of lightwave communication systems. As the trend towards still faster and higher capacity systems continues, it has become increasingly necessary to perform more and more signal-processing operations in the optical domain itself, i.e., with all-optical components and devices that possess a high bandwidth and can perform parallel processing functions to eliminate the electronic bottleneck.

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The basic concepts of tuned half-wave lines were covered by Hubert and Gent [1]. In this paper the problem of overvoltages during faults and the stability of the system incorporating such tuned lines are discussed. The type of tuning bank and the line arrangements that will be satisfactory from the point of view of stability are suggested. The behavior of a line tuned by distributed capacitor is analyzed, and its performance is compared with the other type of tuned line.

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Bypass operation with the aid of a special bypass valve is an important part of present-day schemes of protection for h.v. d.c. transmission systems. In this paper, the possibility of using two valves connected to any phase in the bridge convertor for the purpose of bypass operation is studied. The scheme is based on the use of logic circuits in conjunction with modified methods of fault detection. Analysis of the faults in a d.c. transmission system is carried out with the object of determining the requirements of such a logic-circuit control system. An outline of the scheme for the logic-circuit control of the bypass operation for both rectifier and invertor bridges is then given. Finally, conclusions are drawn regarding the advantages of such a system, which include reduction in the number of valves, prevention of severe faults and fast clearance of faults, in addition to the immediate location of the fault and its nature.

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This paper provides additional theoretical information on half-wave-length power transmission. The analysis is rendered more general by consideration of a natural half-wave line instead of a short line tuned to half-wave. The effects of line loading and its power factor on the voltage and current profiles of the line and ganerator excitation have been included. Some of the operating problems such as charging of the line and synchronization of the half-wave system are also discussed. The inevitability of power-frequency overvoltages during faults is established. Stability studies have indicated that the use of switching stations is not beneficial. Typical swing curves are also presented.

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The effectiveness of series capacitors used with long distance transmission lines in improving system stability is analyzed. Compensation efficiency is defined as the effectiveness of series capacitors. The influence of various factors on compensation efficiency such as capacitor location, line length, and degree of series compensation is investigated. Proper use of shunt reactors with series capacitors, in addition to limiting power frequency over- voltages, increases the maximum power transfer. Analytical expressions are included to aid in the calculation of compensation efficiency for a few typical cases. Curves are also presented indicating the critical value of shunt Mvar required for various degrees of series compensation and line lengths.

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One of the long standing problems in quantum chemistry had been the inability to exploit full spatial and spin symmetry of an electronic Hamiltonian belonging to a non-Abelian point group. Here, we present a general technique which can utilize all the symmetries of an electronic (magnetic) Hamiltonian to obtain its full eigenvalue spectrum. This is a hybrid method based on Valence Bond basis and the basis of constant z-component of the total spin. This technique is applicable to systems with any point group symmetry and is easy to implement on a computer. We illustrate the power of the method by applying it to a model icosahedral half-filled electronic system. This model spans a huge Hilbert space (dimension 1,778,966) and in the largest non-Abelian point group. The C60 molecule has this symmetry and hence our calculation throw light on the higher energy excited states of the bucky ball. This method can also be utilized to study finite temperature properties of strongly correlated systems within an exact diagonalization approach. (C) 2011 Wiley Periodicals, Inc. Int J Quantum Chem, 2012

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Photoemission spectroscopy offers the unique possibility of mapping out the electronic structure of the occupied electron states. However, the extreme surface sensitivity of this technique ensures that only the surface and the near-surface regions of any sample are probed. An important question arises in this context—Is the electronic structure of the surface region the same as that of the bulk? We address this issue using two different series of vanadium oxides, Ca1−xSrxVO3 and La1−xCaxVO3. Our results clearly establish that the electronic structure of the surface region is drastically different from that of the bulk in both these cases. We provide a method to separate the two contributions: one arising from the near-surface region and the other representative of the bulk. This separation allows us to deduce some very unusual behaviors of the electronic structures in these systems.

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Thin films of ZrO2 have been deposited by ALD on Si(100) and SIMOX using two different metalorganic complexes of Zr as precursors. These films are characterized by X-ray diffraction, transmission and scanning electron microscopies, infrared spectroscopy, and electrical measurements. These show that amorphous ZrO2 films of high dielectric quality may be grown on Si(100) starting about 400degreesC. As the growth temperature is raised, the films become crystalline, the phase formed and the microstructure depending on precursor molecular structure. The phase of ZrO2 formed depends also on the relative duration of the precursor and oxygen pulses. XPS and IR spectroscopy show that films grown at low temperatures contain chemically unbound carbon, its extent depending on the precursor. C-V measurements show that films grown on Si(100) have low interface state density, low leakage current, a hysteresis width of only 10-250 mV and a dielectric constant of similar to16-25.

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Symmetrized DMRG calculations on long oligomers of poly- para-phenylene (PPP) and poly-para-phenylene vinylene (PPV) systems within a `U-V' model have been carried out to obtain the one-photon, two-photon and singlet-triplet gaps in these systems. The extrapolated gaps (in eV) are 2.89, 3.76 and 2.72 in PPP and 3.01, 3.61 and 2.23 in PPV for the one- photon, two-photon and spin gaps respectively. By studying doped systems, we have obtained the exciton binding energies. The larger exciton binding energies, compared to strongly dimerized linear chains emphasizes the role of topology in these polymers. Bond orders, charge and spin correlations in the low-lying states bring out the similarities between the lowest one-photon, the lowest triplet and the lowest bipolaronic states in these systems. The two-photon state bond orders show evidence for strong localization of this excitation in both PPP and PPV systems.

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We report Raman signatures of electronic topological transition (ETT) at 3.6 GPa and rhombohedral (alpha-Bi2Te3) to monoclinic (beta-Bi2Te3) structural transition at similar to 8 GPa. At the onset of ETT, a new Raman mode appears near 107 cm(-1) which is dispersionless with pressure. The structural transition at similar to 8 GPa is marked by a change in pressure derivative of A(1g) and E-g mode frequencies as well as by appearance of new modes near 115 cm(-1) and 135 cm(-1). The mode Grilneisen parameters are determined in both the alpha and beta-phases. (C) 2011 Elsevier Ltd. All rights reserved.

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This paper presents an approach for identifying the faulted line section and fault location on transmission systems using support vector machines (SVMs) for diagnosis/post-fault analysis purpose. Power system disturbances are often caused by faults on transmission lines. When fault occurs on a transmission system, the protective relay detects the fault and initiates the tripping operation, which isolates the affected part from the rest of the power system. Based on the fault section identified, rapid and corrective restoration procedures can thus be taken to minimize the power interruption and limit the impact of outage on the system. The approach is particularly important for post-fault diagnosis of any mal-operation of relays following a disturbance in the neighboring line connected to the same substation. This may help in improving the fault monitoring/diagnosis process, thus assuring secure operation of the power systems. In this paper we compare SVMs with radial basis function neural networks (RBFNN) in data sets corresponding to different faults on a transmission system. Classification and regression accuracy is reported for both strategies. Studies on a practical 24-Bus equivalent EHV transmission system of the Indian Southern region is presented for indicating the improved generalization with the large margin classifiers in enhancing the efficacy of the chosen model.

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In this paper, knowledge-based approach using Support Vector Machines (SVMs) are used for estimating the coordinated zonal settings of a distance relay. The approach depends on the detailed simulation studies of apparent impedance loci as seen by distance relay during disturbance, considering various operating conditions including fault resistance. In a distance relay, the impedance loci given at the relay location is obtained from extensive transient stability studies. SVMs are used as a pattern classifier for obtaining distance relay co-ordination. The scheme utilizes the apparent impedance values observed during a fault as inputs. An improved performance with the use of SVMs, keeping the reach when faced with different fault conditions as well as system power flow changes, are illustrated with an equivalent 265 bus system of a practical Indian Western Grid.

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In developing countries, a high rate of growth in the demand for electric energy is felt, and so the addition of new generating units becomes inevitable. In deregulated power systems, private generating stations are encouraged to add new generations. Some of the factors considered while placing a new generating unit are: availability of esources, ease of transmitting power, distance from the load centre, etc. Finding the most appropriate locations for generation expansion can be done by running repeated power flows and carrying system studies like analyzing the voltage profile, voltage stability, loss analysis, etc. In this paper a new methodology is proposed which will mainly consider the existing network topology. A concept of T-index is introduced in this paper, which considers the electrical distances between generator and load nodes. This index is used for ranking the most significant new generation expansion locations and also indicates the amount of permissible generations that can be installed at these new locations. This concept facilitates for the medium and long term planning of power generation expansions within the available transmission corridors. Studies carried out on an EHV equivalent 10-bus system and IEEE 30 bus systems are presented for illustration purposes.