Performance analysis of fixed gain amplify-and-forward relaying with time-efficient cascaded channel estimation

In a cooperative system with an amplify-and-forward relay, the cascaded channel training protocol enables the destination to estimate the source-destination channel gain and the product of the source-relay (SR) and relay-destination (RD) channel gains using only two pilot transmissions from the source. Notably, the destination does not require a separate estimate of the SR channel. We develop a new expression for the symbol error probability (SEP) of AF relaying when imperfect channel state information (CSI) is acquired using the above training protocol. A tight SEP upper bound is also derived; it shows that full diversity is achieved, albeit at a high signal-to-noise ratio (SNR). Our analysis uses fewer simplifying assumptions, and leads to expressions that are accurate even at low SNRs and are different from those in the literature. For instance, it does not approximate the estimate of the product of SR and RD channel gains by the product of the estimates of the SR and RD channel gains. We show that cascaded channel estimation often outperforms a channel estimation protocol that incurs a greater training overhead by forwarding a quantized estimate of the SR channel gain to the destination. The extent of pilot power boosting, if allowed, that is required to improve performance is also quantified.

Antenna Selection in Interference-Constrained Underlay Cognitive Radios: SEP-Optimal Rule and Performance Benchmarking

In the underlay mode of cognitive radio, secondary users are allowed to transmit when the primary is transmitting, but under tight interference constraints that protect the primary. However, these constraints limit the secondary system performance. Antenna selection (AS)-based multiple antenna techniques, which exploit spatial diversity with less hardware, help improve secondary system performance. We develop a novel and optimal transmit AS rule that minimizes the symbol error probability (SEP) of an average interference-constrained multiple-input-single-output secondary system that operates in the underlay mode. We show that the optimal rule is a non-linear function of the power gain of the channel from the secondary transmit antenna to the primary receiver and from the secondary transmit antenna to the secondary receive antenna. We also propose a simpler, tractable variant of the optimal rule that performs as well as the optimal rule. We then analyze its SEP with L transmit antennas, and extensively benchmark it with several heuristic selection rules proposed in the literature. We also enhance these rules in order to provide a fair comparison, and derive new expressions for their SEPs. The results bring out new inter-relationships between the various rules, and show that the optimal rule can significantly reduce the SEP.

k.p based closed form energy band gap and transport electron effective mass model for 100] and 110] relaxed and strained Silicon nanowire

In this paper, we address a physics based closed form model for the energy band gap (E-g) and the transport electron effective mass in relaxed and strained 100] and 110] oriented rectangular Silicon Nanowire (SiNW). Our proposed analytical model along 100] and 110] directions are based on the k.p formalism of the conduction band energy dispersion relation through an appropriate rotation of the Hamiltonian of the electrons in the bulk crystal along 001] direction followed by the inclusion of a 4 x 4 Luttinger Hamiltonian for the description of the valance band structure. Using this, we demonstrate the variation in Eg and the transport electron effective mass as function of the cross-sectional dimensions in a relaxed 100] and 110] oriented SiNW. The behaviour of these two parameters in 100] oriented SiNW has further been studied with the inclusion of a uniaxial strain along the transport direction and a biaxial strain, which is assumed to be decomposed from a hydrostatic deformation along 001] with the former one. In addition, the energy band gap and the effective mass of a strained 110] oriented SiNW has also been formulated. Using this, we compare our analytical model with that of the extracted data using the nearest neighbour empirical tight binding sp(3)d(5)s* method based simulations and has been found to agree well over a wide range of device dimensions and applied strain. (C) 2012 Elsevier Ltd. All rights reserved.

Measurement of IGBT switching characteristics and loss using coaxial current transformer

Device switching times and switching energy losses are required over a wide range of practical working conditions for successful design of insulated gate bipolar transistor (IGBT) based power converters. This paper presents a cost-effective experimental setup using a co-axial current transformer for measurement of IGBT switching characteristics and switching energy loss. Measurements are carried out on a 50A, 1200V IGBT (SKM50GB123D) for different values of gate resistance, device current and junction temperature. These measurements augment the technical data available in the device datasheet.Short circuit transients are also investigated experimentally under hard switched fault as well as fault under load conditions.

Direct Band-to-Band Tunneling in Reverse Biased MoS2 Nanoribbon p-n Junctions

We investigate the direct band-to-band tunneling (BTBT) in a reverse biased molybdenum disulfide (MoS2) nanoribbon p-n junction by analyzing the complex band structure obtained from semiempirical extended Huckel method under relaxed and strained conditions. It is demonstrated that the direct BTBT is improbable in relaxed monolayer nanoribbon; however, with the application of certain uniaxial tensile strain, the material becomes favorable for it. On the other hand, the relaxed bilayer nanoribbon is suitable for direct BTBT but becomes unfavorable when the applied uniaxial tensile or compressive strain goes beyond a certain limit. Considering the Wentzel-Kramers-Brillouin approximation, we evaluate the tunneling probability to estimate the tunneling current for a small applied reverse bias. Reasonably high tunneling current in the MoS2 nanoribbons shows that it can take advantage over graphene nanoribbon in future tunnel field-effect transistor applications.

Evidence for the role of Mycobacteriumtuberculosis RecG helicase in DNA repair and recombination

In order to survive and replicate in a variety of stressful conditions during its life cycle, Mycobacteriumtuberculosis must possess mechanisms to safeguard the integrity of the genome. Although DNA repair and recombination related genes are thought to play key roles in the repair of damaged DNA in all organisms, so far only a few of them have been functionally characterized in the tubercle bacillus. In this study, we show that M.tuberculosis RecG (MtRecG) expression was induced in response to different genotoxic agents. Strikingly, expression of MtRecG in Escherichiacoli recG mutant strain provided protection against mitomycin C, methyl methane sulfonate and UV induced cell death. Purified MtRecG exhibited higher binding affinity for the Holliday junction (HJ) compared with a number of canonical recombinational DNA repair intermediates. Notably, although MtRecG binds at the core of the mobile and immobile HJs, and with higher binding affinity for the immobile HJ, branch migration was evident only in the case of the mobile HJ. Furthermore, immobile HJs stimulate MtRecG ATPase activity less efficiently than mobile HJs. In addition to HJ substrates, MtRecG exhibited binding affinity for a variety of branched DNA structures including three-way junctions, replication forks, flap structures, forked duplex and a D-loop structure, but demonstrated strong unwinding activity on replication fork and flap DNA structures. Together, these results support that MtRecG plays an important role in processes related to DNA metabolism under normal as well as stress conditions.

Performance analysis of adaptive physical layer network coding for wireless two-way relaying

The performance analysis of adaptive physical layer network-coded two-way relaying scenario is presented which employs two phases: Multiple access (MA) phase and Broadcast (BC) phase. The deep channel fade conditions which occur at the relay referred as the singular fade states fall in the following two classes: (i) removable and (ii) non-removable singular fade states. With every singular fade state, we associate an error probability that the relay transmits a wrong network-coded symbol during the BC phase. It is shown that adaptive network coding provides a coding gain over fixed network coding, by making the error probabilities associated with the removable singular fade states contributing to the average Symbol Error Rate (SER) fall as SNR-2 instead of SNR-1. A high SNR upper-bound on the average end-to-end SER for the adaptive network coding scheme is derived, for a Rician fading scenario, which is found to be tight through simulations. Specifically, it is shown that for the adaptive network coding scheme, the probability that the relay node transmits a wrong network-coded symbol is upper-bounded by twice the average SER of a point-to-point fading channel, at high SNR. Also, it is shown that in a Rician fading scenario, it suffices to remove the effect of only those singular fade states which contribute dominantly to the average SER.

Channel training signal design for reciprocal multiple antenna systems with beamforming

Fast and efficient channel estimation is key to achieving high data rate performance in mobile and vehicular communication systems, where the channel is fast time-varying. To this end, this work proposes and optimizes channel-dependent training schemes for reciprocal Multiple-Input Multiple-Output (MIMO) channels with beamforming (BF) at the transmitter and receiver. First, assuming that Channel State Information (CSI) is available at the receiver, a channel-dependent Reverse Channel Training (RCT) signal is proposed that enables efficient estimation of the BF vector at the transmitter with a minimum training duration of only one symbol. In contrast, conventional orthogonal training requires a minimum training duration equal to the number of receive antennas. A tight approximation to the capacity lower bound on the system is derived, which is used as a performance metric to optimize the parameters of the RCT. Next, assuming that CSI is available at the transmitter, a channel-dependent forward-link training signal is proposed and its power and duration are optimized with respect to an approximate capacity lower bound. Monte Carlo simulations illustrate the significant performance improvement offered by the proposed channel-dependent training schemes over the existing channel-agnostic orthogonal training schemes.

Spectroscopic studies of In2O3 nanostructures; photovoltaic demonstration of In2O3/p-Si heterojunction

The thermal oxidation process of the indium nitride (InN) nanorods (NRs) was studied. The SEM studies reveal that the cracked and burst mechanism for the formation of indium oxide (In2O3) nanostructures by oxidizing the InN NRs at higher temperatures. XRD results confirm the bcc crystal structure of the as prepared In2O3 nanostructures. Strong and broad photoluminescence spectrum located at the green to red region with maximum intensity at 566 nm along with a weak ultraviolet emission at 338 nm were observed due to oxygen vacancy levels and free excitonic transitions, respectively. The valence band onset energy of 2.1 eV was observed from the XPS valence band spectrum, clearly justifies the alignment of Fermi level to the donor level created due to the presence of oxygen vacancies which were observed in the PL spectrum. The elemental ratio In:O in as prepared In2O3 was found to be 42:58 which is in close agreement with the stoichiometric value of 40:60. A downward shift was observed in the Raman peak positions due to a possible phonon confinement effect in the nanoparticles formed in bursting mechanism. Such single junction devices exhibit promising photovoltaic performance with fill factor and conversion efficiency of 21% and 0.2%, respectively, under concentrated AM1.5 illumination.

Chiral Mott insulator with staggered loop currents in the fully frustrated Bose-Hubbard model

Motivated by experiments on Josephson junction arrays in a magnetic field and ultracold interacting atoms in an optical lattice in the presence of a ``synthetic'' orbital magnetic field, we study the ``fully frustrated'' Bose-Hubbard model and quantum XY model with half a flux quantum per lattice plaquette. Using Monte Carlo simulations and the density matrix renormalization group method, we show that these kinetically frustrated boson models admit three phases at integer filling: a weakly interacting chiral superfluid phase with staggered loop currents which spontaneously break time-reversal symmetry, a conventional Mott insulator at strong coupling, and a remarkable ``chiral Mott insulator'' (CMI) with staggered loop currents sandwiched between them at intermediate correlation. We discuss how the CMI state may be viewed as an exciton condensate or a vortex supersolid, study a Jastrow variational wave function which captures its correlations, present results for the boson momentum distribution across the phase diagram, and consider various experimental implications of our phase diagram. Finally, we consider generalizations to a staggered flux Bose-Hubbard model and a two-dimensional (2D) version of the CMI in weakly coupled ladders.

Accurate performance analysis of single and opportunistic AF relay cooperation with imperfect cascaded channel estimates

Given the significant gains that relay-based cooperation promises, the practical problems of acquisition of channel state information (CSI) and the characterization and optimization of performance with imperfect CSI are receiving increasing attention. We develop novel and accurate expressions for the symbol error probability (SEP) for fixed-gain amplify-and-forward relaying when the destination acquires CSI using the time-efficient cascaded channel estimation (CCE) protocol. The CCE protocol saves time by making the destination directly estimate the product of the source-relay and relay-destination channel gains. For a single relay system, we first develop a novel SEP expression and a tight SEP upper bound. We then similarly analyze an opportunistic multi-relay system, in which both selection and coherent demodulation use imperfect estimates. A distinctive aspect of our approach is the use of as few simplifying approximations as possible, which results in new results that are accurate at signal-to-noise-ratios as low as 1 dB for single and multi-relay systems. Using insights gleaned from an asymptotic analysis, we also present a simple, closed-form, nearly-optimal solution for allocation of energy between pilot and data symbols at the source and relay(s).

Low order anti-aliasing filters for sparse signals in embedded applications

Major emphasis, in compressed sensing (CS) research, has been on the acquisition of sub-Nyquist number of samples of a signal that has a sparse representation on some tight frame or an orthogonal basis, and subsequent reconstruction of the original signal using a plethora of recovery algorithms. In this paper, we present compressed sensing data acquisition from a different perspective, wherein a set of signals are reconstructed at a sampling rate which is a multiple of the sampling rate of the ADCs that are used to measure the signals. We illustrate how this can facilitate usage of anti-aliasing filters with relaxed frequency specifications and, consequently, of lower order.

Impact of substrate nitridation on the photoluminescence and photovoltaic characteristics of GaN grown on p-Si (100) by molecular beam epitaxy

This report focuses on the structural and optical properties of the GaN films grown on p-Si (100) substrates along with photovoltaic characteristics of GaN/p-Si heterojunctions fabricated with substrate nitridation and in absence of substrate nitridation. The high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), Raman and photoluminescence (PL) spectroscopic studies reveal that the significant enhancement in the structural as well as in the optical properties of GaN epifilms grown with silicon nitride buffer layer when compared with the sample grown without silicon nitride buffer layer. The low temperature PL shows a free excitonic (FX) emission peak at 3.51 eV at the temperature of 5 K with a very narrow line width of 35 meV. Temperature dependent PL spectra follow the Varshni equation well and peak energy blue shifts by similar to 63 meV from 300 to 5 K. Raman data confirms the strain free nature and reasonably good crystallinity of the films. The GaN/p-Si heterojunctions fabricated without substrate nitridation show a superior photovoltaic performance compared to the devices fabricated in presence of substrate nitridation. The discussions have been carried out on the junction properties. Such single junction devices exhibit a promising fill factor and conversion efficiency of 23.36 and 0.12 %, respectively, under concentrated AM1.5 illumination.

On k-stellated and k-stacked spheres

We introduce the class Sigma(k)(d) of k-stellated (combinatorial) spheres of dimension d (0 <= k <= d + 1) and compare and contrast it with the class S-k(d) (0 <= k <= d) of k-stacked homology d-spheres. We have E-1(d) = S-1(d), and Sigma(k)(d) subset of S-k(d) ford >= 2k-1. However, for each k >= 2 there are k-stacked spheres which are not k-stellated. For d <= 2k - 2, the existence of k-stellated spheres which are not k-stacked remains an open question. We also consider the class W-k(d) (and K-k(d)) of simplicial complexes all whose vertex-links belong to Sigma(k)(d - 1) (respectively, S-k(d - 1)). Thus, W-k(d) subset of K-k(d) for d >= 2k, while W-1(d) = K-1(d). Let (K) over bar (k)(d) denote the class of d-dimensional complexes all whose vertex-links are k-stacked balls. We show that for d >= 2k + 2, there is a natural bijection M -> (M) over bar from K-k(d) onto (K) over bar (k)(d + 1) which is the inverse to the boundary map partial derivative: (K) over bar (k)(d + 1) -> (K) over bar (k)(d). Finally, we complement the tightness results of our recent paper, Bagchi and Datta (2013) 5], by showing that, for any field F, an F-orientable (k + 1)-neighbourly member of W-k(2k + 1) is F-tight if and only if it is k-stacked.

N-Terminal disordered domain of saccharomyces cerevisiae Hop1 protein Is dispensable for DNA binding, bridging, and synapsis of double-stranded DNA molecules but is ecessary for spore formation

The cytological architecture of the synaptonemal complex (SC), a meiosis-specific proteinaceous structure, is evolutionarily conserved among eukaryotes. However, little is known about the biochemical properties of SC components or the mechanisms underlying their roles in meiotic chromosome synapsis and recombination. Functional analysis of Saccharomyces cerevisiae Hop1, a key structural component of SC, has begun to reveal important insights into its function in interhomolog recombination. Previously, we showed that Hop1 is a structure-specific DNA-binding protein, exhibits higher binding affinity for the Holliday junction, and induces structural distortion at the core of the junction. Furthermore, Hop1 promotes DNA condensation and intra- and intermolecular synapsis between duplex DNA molecules. Here, we show that Hop1 possesses a modular domain organization, consisting of an intrinsically disordered N-terminal domain and a protease-resistant C-terminal domain (Hop1CTD). Furthermore, we found that Hop1CTD exhibits strong homotypic as well as heterotypic protein protein interactions, and its biochemical activities were similar to those of the full-length Hop1 protein. However, Hop1CTD failed to complement the meiotic recombination defects of the Delta hop1 strain, indicating that both N- and C-terminal domains of Hop1 are essential for meiosis and spore formation. Altogether, our findings reveal novel insights into the structure-function relationships of Hop1 and help to further our understanding of its role in meiotic chromosome synapsis and recombination.