Distributed Coding for Multiple Access Communication with Side Information

In a typical sensor network scenario a goal is to monitor a spatio-temporal process through a number of inexpensive sensing nodes, the key parameter being the fidelity at which the process has to be estimated at distant locations. We study such a scenario in which multiple encoders transmit their correlated data at finite rates to a distant, common decoder over a discrete time multiple access channel under various side information assumptions. In particular, we derive an achievable rate region for this communication problem.

Thermodynamics and phase equilibria in the system Ga---In using multi-parameter functions

A four and a five-parameter functions are used to analyse and interpret the high and low temperature thermodynamic data and phase equilibria in the Ga-In system.

Spectroscopic and electrical properties of SiO2 films prepared by simple and cost effective sol-gel process

Amorphous SiO2 thin films were prepared on glass and silicon substrates by cost effective sol-gel method. Tetra ethyl ortho silicate (TEOS) was used as the precursor material, ethanol as solvent and concentrated HCl as a catalyst. The films were characterized at different annealing temperatures. The optical transmittance was slightly increased with increase of annealing temperature. The refractive index was found to be 1.484 at 550 nm. The formation of SiO2 film was analyzed from FT-IR spectra. The MOS capacitors were designed using silicon (1 0 0) substrates. The current-voltage (I-V), capacitance-voltage (C-V) and dissipation-voltage (D-V) measurements were taken for all the annealed films deposited on Si (1 0 0). The variation of current density, resistivity and dielectric constant of SiO2 films with different annealing temperatures was investigated and discussed for its usage in applications like MOS capacitor. The results revealed the decrease of dielectric constant and increase of resistivity of SiO2 films with increasing annealing temperature. (C) 2010 Elsevier B.V. All rights reserved.

Strong nonlocalization induced by small scale parameter on terahertz flexural wave dispersion characteristics of a monolayer graphene

This paper presents the strong nonlocal scale effect on the flexural wave propagation in a monolayer graphene sheet. The graphene is modeled as an isotropic plate of one atom thick. Nonlocal governing equation of motion is derived and wave propagation analysis is performed using spectral analysis. The present analysis shows that the flexural wave dispersion in graphene obtained by local and nonlocal elasticity theories is quite different. The nonlocal elasticity calculation shows that the wavenumber escapes to infinite at certain frequency and the corresponding wave velocity tends to zero at that frequency indicating localization and stationary behavior. This behavior is captured in the spectrum and dispersion curves. The cut-off frequency of flexural wave not only depend on the axial wavenumber but also on the nonlocal scaling parameter. The effect of axial wavenumber on the wave behavior in graphene is also discussed in the present manuscript. (C) 2010 Elsevier B.V. All rights reserved.

Electrical switching and thermal studies on bulk Ge-Te-Bi glasses

Bulk, melt quenched Ge18Te82-xBix glasses (1 <= x <= 4) have been found to exhibit memory type electrical switching behavior, which is in agreement with the lower thermal diffusivity values of Ge-Te-Bi samples. A linear variation in switching voltages (V-th) has been found in these samples with increase in thickness which is consistent with the memory type electrical switching. Also, the switching voltages have been found to decrease with an increase in temperature which happens due to the decrease in the activation energy for crystallization at higher temperatures. Further. V-th of Ge18Te82-xBix glasses have been found to decrease with the increase in Bi content, indicating that in the Ge-Te-Bi system, the resistivity of the additive has a stronger role to play in the composition dependence of V-th, in comparison with the network connectivity and rigidity factors. In addition, the composition dependence of crystallization activation energy has been found to show a decrease with an increase in Bi content, which is consistent with the observed decrease in the switching voltages. X-ray diffraction studies on thermally crystallized samples reveal the presence of hexagonal Te, GeTe, Bi2Te3 phases, suggesting that bismuth is not taking part in network formation to a greater extent, as reflected in the variation of switching voltages with the addition of Bi. SEM studies on switched and un-switched regions of Ge-Te-Bi samples indicate that there are morphological changes in the switched region, which can be attributed to the formation of the crystalline channel between two electrodes during switching. (C) 2010 Elsevier B.V. All rights reserved.

Crystal structure and electrical properties of CaNaBi2Nb3O12 ceramics

Monophasic CaNaBi2Nb3O12 powders were synthesized via the conventional solid-state reaction route. Rietveld refinement of the X-ray powder diffraction (XRD) data and selected area electron diffraction (SAED) studies confirmed the phase to be a three-layer Aurivillius oxide associated with an orthorhombic B2cb space group. The dielectric properties of the ceramics have been studied in the 300-800 K temperature range at various frequencies (1 kHz to 1 MHz). A dielectric anomaly was observed at 676 K for all the frequencies corresponding to the ferroelectric to paraelectric phase transition as it was also corroborated by the high temperature X-ray diffraction studies. The incidence of the polarization-electric field (P vs. E) hysteresis loop demonstrated CaNaBi2Nb3O12 to be ferroelectric.

Generalized State Parameter for Partly Saturated Soils

Studies on compressibility and shear strength aspects are the concern of many investigators concerned with partly saturated soils. In soil engineering connected with partly saturated soils, there are no approaches connecting soil states and stress conditions. The present investigation is essentially a step in this direction. A generalized state parameter, identified with regard to material states is shown to be related to the compressibility and shear strength. The involved parameters are simple and normally determined in routine investigations. The advantage of this approach is that changes in soil states due to external stress conditions and the associated changes in strength can be examined particularly when different types of soils are involved.

Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes

InN/GaN heterostructure based Schottky diodes were fabricated by plasma-assisted molecular beam epitaxy. The temperature dependent electrical transport properties were carried out for InN/GaN heterostructure. The barrier height and the ideality factor of the Schottky diodes were found to be temperature dependent. The temperature dependence of the barrier height indicates that the Schottky barrier height is inhomogeneous in nature at the heterostructure interface. The higher value of the ideality factor and its temperature dependence suggest that the current transport is primarily dominated by thermionic field emission (TFE) other than thermionic emission (TE). The room temperature barrier height obtained by using TE and TFE models were 1.08 and 1.43 eV, respectively. (C) 2011 American Institute of Physics. doi: 10.1063/1.3549685]

Electrical Relaxation and Transport in 0.5Cs(2)O-0.5Li(2)O-3B(2)O(3) Glasses

The frequency and temperature dependence of the dielectric constant and the electrical conductivity of the transparent glasses in the composition 0.5Cs(2)O-0.5Li(2)O-3B(2)O(3) (CLBO) were investigated in the 100 Hz - 10 MHz frequency range. The dielectric constant for the as-quenched glass increased with increasing temperature, exhibiting anomalies in the vicinity of the glass transition and crystallization temperatures. The temperature coefficient of dielectric constant was estimated (35 +/- 2 ppm. K-1) using Havinga's formula. The dielectric loss at 313 K is 0.005 +/- 0.0005 at all the frequencies understudy. The activation energy associated with the electrical relaxation determined from the electric modulus spectra was found to be 1.73 +/- 0.05 eV, close to that of the activation energy obtained for DC conductivity (1.6 +/- 0.06 eV). The frequency dependent electrical conductivity was analyzed using Jonscher's power law. The combination of these dielectric characteristics suggests that these are good candidates for electrical energy storage device applications.

Design, modelling and simulation of vibratory micromachined gyroscopes

Among various MEMS sensors, a rate gyroscope is one of the most complex sensors from the design point of view. The gyro normally consists of a proof mass suspended by an elaborate assembly of beams that allow the system to vibrate in two transverse modes. The structure is normally analysed and designed using commercial FEM packages such as ANSYS or MEMS specific commercial tools such as Coventor or Intellisuite. In either case, the complexity in analysis rises manyfolds when one considers the etch hole topography and the associated fluid flow calculation for damping. In most cases, the FEM analysis becomes prohibitive and one resorts to equivalent electrical circuit simulations using tools like SABER in Coventor. Here, we present a simplified lumped parameter model of the tuning fork gyro and show how easily it can be implemented using a generic tool like SIMULINK. The results obtained are compared with those obtained from more elaborate and intense simulations in Coventor. The comparison shows that lumped parameter SIMULINK model gives equally good results with fractional effort in modelling and computation. Next, the performance of a symmetric and decoupled vibratory gyroscope structure is also evaluated using this approach and a few modifications are made in this design to enhance the sensitivity of the device.

On Computation of Minimum Distance of Linear Block Codes Above 1/2 Rate Coding

The minimum distance of linear block codes is one of the important parameter that indicates the error performance of the code. When the code rate is less than 1/2, efficient algorithms are available for finding minimum distance using the concept of information sets. When the code rate is greater than 1/2, only one information set is available and efficiency suffers. In this paper, we investigate and propose a novel algorithm to find the minimum distance of linear block codes with the code rate greater than 1/2. We propose to reverse the roles of information set and parity set to get virtually another information set to improve the efficiency. This method is 67.7 times faster than the minimum distance algorithm implemented in MAGMA Computational Algebra System for a (80, 45) linear block code.

Effect of sodium diffusion on the structural and electrical properties of Cu2ZnSnS4 thin films

Cu2ZnSnS4 (CZTS) is a kesterite semiconductor consisting of abundantly available elements. It has a band gap of 1.5 eV and a large absorption coefficient. Hence, thin films made of this material can be used as absorber layers of a solar cell. CZTS films were deposited on soda lime and Na free borosilicate glass substrates through Ultrasonic Spray Pyrolysis. The diffusion of sodium from soda lime glass was found to have a profound effect on characteristics like grain size, crystal texture and conductivity of CZTS thin films. Copper ion concentration also varied during the deposition and it was observed that the carrier concentration was enhanced when there was a deficiency of copper in the films. The effect of sodium diffusion and copper deficiency in enhancing the structural and electrical properties of CZTS films are presented in this paper. (C) 2010 Elsevier B.V. All rights reserved.

Optical and electrical properties of SnS semiconductor crystals grown by physical vapor deposition technique

Tin sulfide (SnS) is a material of interest for use as an absorber in low cost solar cells. Single crystals of SnS were grown by the physical vapor deposition technique. The grown crystals were characterized to evaluate the composition, structure, morphology, electrical and optical properties using appropriate techniques. The composition analysis indicated that the crystals were nearly stoichiometric with Sn-to-S atomic percent ratio of 1.02. Study of their morphology revealed the layered type growth mechanism with low surface roughness. The grown crystals had orthorhombic structure with (0 4 0) orientation. They exhibited an indirect optical band gap of 1.06 eV and direct band gap of 1.21 eV with high absorption coefficient (up to 10(3) cm(-1)) above the fundamental absorption edge. The grown crystals were of p-type with an electrical resistivity of 120 Omega cm and carrier concentration 1.52 x 10(15) cm(-3). Analysis of optical absorption and diffuse reflectance spectra showed the presence of a wide absorption band in the wavelength range 300-1200 nm, which closely matches with a significant part of solar radiation spectrum. The obtained results were discussed to assess the suitability of the SnS crystal for the fabrication of optoelectronic devices. (C) 2011 Elsevier B.V. All rights reserved.

A Flexible Class of Regenerating Codes for Distributed Storage

In the distributed storage setting introduced by Dimakis et al., B units of data are stored across n nodes in the network in such a way that the data can be recovered by connecting to any k nodes. Additionally one can repair a failed node by connecting to any d nodes while downloading at most beta units of data from each node. In this paper, we introduce a flexible framework in which the data can be recovered by connecting to any number of nodes as long as the total amount of data downloaded is at least B. Similarly, regeneration of a failed node is possible if the new node connects to the network using links whose individual capacity is bounded above by beta(max) and whose sum capacity equals or exceeds a predetermined parameter gamma. In this flexible setting, we obtain the cut-set lower bound on the repair bandwidth along with a constructive proof for the existence of codes meeting this bound for all values of the parameters. An explicit code construction is provided which is optimal in certain parameter regimes.

Critical exponent of the electrical conductivity in the paracoherence region of a thin film of YBa2Cu3O7?x

Critical exponent of the electrical conductivity in the paracoherence region (gamma) of the high temperature superconductor YBa2Cu3O7-x (YBCO) has been estimated for high quality thin film on ZrO2 substrate prepared by high pressure oxygen sputtering. High energy ion irradiation was carried out using 100 MeV O-16(7+) ions at liquid nitrogen to see the effects of disorder on the value of the exponent. The critical exponent from a value of about 2 to 1.62 upon irradiation. Studies were also carried film to see the effect of ageing and annealing.