Study Of Acoustic Source Localization Algorithm For Planar Arrays

The source localization algorithms in the earlier works, mostly used non-planar arrays. If we consider scenarios like human-computer communication, or human-television communication where the microphones need to be placed on the computer monitor or television front panel, i.e we need to use the planar arrays. The algorithm proposed in 1], is a Linear Closed Form source localization algorithm (LCF algorithm) which is based on Time Difference of Arrivals (TDOAs) that are obtained from the data collected using the microphones. It assumes non-planar arrays. The LCF algorithm is applied to planar arrays in the current work. The relationship between the error in the source location estimate and the perturbation in the TDOAs is derived using first order perturbation analysis and validated using simulations. If the TDOAs are erroneous, both the coefficient matrix and the data matrix used for obtaining source location will be perturbed. So, the Total least squares solution for source localization is proposed in the current work. The sensitivity analysis of the source localization algorithm for planar arrays and non-planar arrays is done by introducing perturbation in the TDOAs and the microphone locations. It is shown that the error in the source location estimate is less when we use planar array instead of the particular non-planar array considered for same perturbation in the TDOAs or microphone location. The location of the reference microphone is proved to be important for getting an accurate source location estimate if we are using the LCF algorithm.

Growth and applications of superconducting and nonsuperconducting oxide epitaxial films

Growth and characterization of high-temperature-superconducting YBa2Cu3O7 and several metallic-oxide thin films by pulsed laser deposition is described here. An overview of substrates employed for epitaxial growth of perovskite-related oxides is presented. Ag-doped YBa2Cu3O7 films grown on bare sapphire are shown to give T-c = 90 K, critical current > 10(6) A/cm(2) at 77 K and surface resistance = 450 mu Omega. Application of epitaxial metallic LaNiO3 thin films as an electrode for ferroelectric oxide and as a normal metal layer barrier in the superconductor-normal metal-superconductor (SNS) Josephson junction is presented. Observation of giant magnetoresistance (GMR) in the metallic La0-6Pb0-4MnO3 thin films up to 50% is highlighted.

Performance of a pipelined ring algorithm for Fast Fourier Transform on transputer arrays

In this paper a pipelined ring algorithm is presented for efficient computation of one and two dimensional Fast Fourier Transform (FFT) on a message passing multiprocessor. The algorithm has been implemented on a transputer based system and experiments reveal that the algorithm is very efficient. A model for analysing the performance of the algorithm is developed from its computation-communication characteristics. Expressions for execution time, speedup and efficiency are obtained and these expressions are validated with experimental results obtained on a four transputer system. The analytical model is then used to estimate the performance of the algorithm for different number of processors, and for different sizes of the input data.

Soft-chemical routes to synthesis of solid oxide materials

We describe three different families of metal oxides, viz., (i) protonated layered perovskites, (ii) framework phosphates of NASICON and KTiOPO4 (KTP) structures and (iii) layered and three-dimensional oxides in the H-V-W-O system, synthesized by 'soft-chemical' routes involving respectively ion-exchange, redox deinteracalation and acid-leaching from appropriate parent oxides. Oxides of the first family, HyA2B3O10(A = La/Ca; B = Ti/Nb), exhibit variable Bronsted acidity and intercalation behaviour that depend on the interlayer structure. V2(PO4)3 prepared by oxidative deintercalation from Na3V2(PO4)3 is a new host material exhibiting reductive insertion of lithium/hydrogen, while K0.5Nb0.5 M0.5OPO4(M = Ti, V) are novel KTP-like materials exhibiting second harmonic generation of 1064 nm radiation. HxVxW1-xO3 for x = 0.125 and 0.33 possessing alpha-MoO3 and hexagonal WO3 structures, prepared by acid-leaching of LiVWO6, represent functionalized oxide materials exhibiting redox and acid-base intercalation reactivity.

Soft chemical synthesis of new layered and three-dimensional oxide hydrates, hxVxW1-xO3×yH2O, related to WO3×2 H2O and WO3. times.1/3 H2O

Two new vanadium-tungsten oxide hydrates of the formulas, H0.125V0.125W0.875O3.1.5H2O (I) and Ho.33V0.33W0.67O3.1/3H2O (II), have been synthesized by acid-leaching of LiVWO6 with aqueous HNO3/HCl. While phase I obtained by treatment of LiVWO6 with dilute HNO3/HCl possesses an orthorhombic structure (a = 7.77(3), b = 13.87(6), c = 7.44(3) angstrom) related to WO3.2H2O, phase II, prepared by refluxing LiVWO6 with concentrated HNO3, is isostructural with WO3.1/3H2O. Dehydration of II around 330-degrees-C yields a hexagonal phase (III, a = 7.25(4), c = 7.74(3) angstrom) isotypic with hexagonal WO3. Both land III exhibit redox and acid-base intercalation reactivity characteristic of layered and tunnel structures.

Structural and electrical properties of radio frequency magnetron sputtered tantalum oxide films: Influence of post-deposition annealing

The as-deposited and annealed radio frequency reactive magnetron sputtered tantalum oxide (Ta2O5) films were characterized by studying the chemical binding configuration, structural and electrical properties. X-ray photoelectron spectroscopy and X-ray diffraction analysis of the films elucidate that the film annealed at 673 K was stoichiometric with orthorhombic beta-phase Ta2O5. The dielectric constant values of the tantalum oxide capacitors with the sandwich structure of Al/Ta2O5/Si were in the range from 14 to 26 depending on the post-deposition annealing temperature. The leakage current density was < 20 nA cm(-2) at the gate bias voltage of 0.04 MV/cm for the annealed films. The electrical conduction mechanism observed in the films was Poole-Frenkel. (C) 2010 Elsevier Ltd. All rights reserved.

8-(3-methylphenoxy)-16H-dinaphtho[2,1-d;1',2'-g][1,3,2]dioxaphosphocine 8-oxide

In the title compound, C28H21O4P, the eight-membered heterocyclic dioxaphosphocine ring has a distorted boat conformation, with the phosphoryl O atom axial and the phenoxy group equatorial. The P=O distance is 1.451 (1) Angstrom and the average length of the three P-O bonds is 1.573 (1) Angstrom. The phenyl ring is nearly perpendicular to both naphthalene planes, making dihedral angles of 91.30 (3) and 97.65 (5)degrees with them. The angle between the two naphthalene planes is 67.73 (3)degrees. The crystal structure is stabilized by van der Waals interactions.

AM(1-x)Al(x)O(3-x) (A=Na or K; M=Nb or Ta): New anion-deficient Perovskite oxides exhibiting oxide ion conduction

Anion-deficient perovskite oxides of the formula AM(1-x)Al(x)O(3-x) (A = Na or K; M = Nb or Ta) have been prepared for 0 < x less than or equal to 0.5. Diffraction experiments reveal that while the potassium compounds adopt orthorhombic/cubic perovskite structures similar to the parent KNbO3/KTaO3, the sodium compound, NaNb0.5Al0.5O2.5, possesses a brownmillerite/LaSr-CuAlO5-like superstructure. Al-27 NMR spectra show an exclusive tetrahedral oxygen coordination for AI(III) in Na-Nb0.5Al0.5O2.5 (I) and both tetrahedral and octahedral coordination for Al(III) in KNb0.5Al0.5O2.5 (II). The results suggest a long-range and short-range ordering of oxide ion vacancies in I and II respectively. Electrical conductivity measurements show a significant oxide ion conduction for KNb1-xAlxO3-x, with the conductivity increasing with x up to x = 0.5. The differences in the Arrhenius plots of the ionic conductivity of I and II have been rationalized in terms of the long-range and short-range ordering of oxide ion vacancies in the anion-deficient perovskite oxides.

Pulsed laser deposited ZnO:In as transparent conducting oxide

Zinc oxide (ZnO) and indium doped ZnO (IZO) thin films with different indium compositions were grown by pulsed laser deposition technique on corning glass substrate. The effect of indium concentration on the structural, morphological, optical and electrical properties of the film was studied. The films were oriented along c-direction with wurtzite structure and highly transparent with an average transmittance of more than 80% in the visible wavelength region. The energy band gap was found to decrease with increasing indium concentration. High transparency makes the films useful as optical windows while the high band gap values support the idea that the film could be a good candidate for optoelectronic devices. The value of resistivity observed to decrease initially with doping concentration and subsequently increases. IZO with 1% of indium showed the lowest resistivity of 2.41 x 10(-2) Omega cm and large transmittance in the visible wavelength region. Especially 1% IZO thin film was observed to be a suitable transparent conducting oxide material to potentially replace indium tin oxide. (C) 2011 Elsevier B.V. All rights reserved.

Quantum corrections to the conductivity in a perovskite oxide: A low-temperature study of LaNi1-xCoxO3 (0?x?0.75)

In this paper we propose to study the evolution of the quantum corrections to the conductivity in an oxide system as we approach the metal-insulator (M-I) transition from the metallic side. We report here the measurement of the low-temperature (0.1 Koxide system LaNi1-x CoxO3 (0?x?0.75). LaNiO3 is a metal and LaCoO3 is an insulator. The system is metallic for x?0.65. For all x, at low temperatures, the conductivity (?) rises with temperature (T). Below 2 K, ? follows a power-law behavior, ?(T)=?(0)+?Tm. For samples in the metallic regime, away from the metal-insulator transition (x?0.4), m?0.3�0.4. As the transition is approached [i.e., ?(0)?0], m increases rapidly; and at the transition [?(0)=0, xc?0.65], m?1. On the insulating side (x>0.65), m takes on large values and ?(0)=0. We explain the temperature dependence of ?(T), for T<2 K, on the metallic side (x?0.4), as arising predominantly from electron-electron interactions, taking into account the diffusion-channel contribution (which gives m=0.5) as well as the Cooper-channel contribution. In this regime, the correction to conductivity, ??(T), is a small fraction of ?(T). However, as the M-I transition is approached (x?xc), ??(T) starts to dominate ?(T) and the above theories fail to explain the observed ?(T).

Thermo and photoluminescence properties of Eu3+ activated hexagonal, monoclinic and cubic gadolinium oxide nanorods

Different phases of Eu3+ activated gadolinium oxide (Gd (OH)(3), GdOOH and Gd2O3) nanorods have been prepared by the hydrothermal method with and without cityl trimethyl ammonium bromide (GAB) surfactant. Cubic Gd2O3:Eu (8 mol%) red phosphor has been prepared by the dehydration of corresponding hydroxide Gd(OH)(3):Eu after calcinations at 350 and 600 degrees C for 3 h, respectively. When Eu3+ ions were introduced into Gd(OH)(3), lattice sites which replace the original Gd3+ ions, a strong red emission centered at 613 nm has been observed upon UV illumination, due to the intrinsic Eu3+ transition between D-5(0) and F-7 configurations. Thermoluminescence glow curves of Gd (OH)(3): Eu and Gd2O3:Eu phosphors have been recorded by irradiating with gamma source ((CO)-C-60) in the dose range 10-60 Gy at a heating rate of 6.7 degrees C sec(-1). Well resolved glow peaks in the range 42-45, 67-76,95-103 and 102-125 degrees C were observed. When gamma-irradiation dose increased to 40 Gy, the glow peaks were reduced and with increase in gamma-dose (50 and 60 Gy) results the shift in first two glow peak temperatures at about 20 degrees C and a new shouldered peak at 86 degrees C was observed. It is observed that there is a shift in glow peak temperatures and variation in intensity, which is mainly attributed to different phases of gadolinium oxide. The trapping parameters namely activation energy (E), order of kinetics (b) and frequency factor were calculated using peak shape and the results are discussed. (C) 2010 Elsevier B.V. All rights reserved.

Retarding effect of surface hydroxylation on titanium(IV) oxide photocatalyst in the degradation of phenol

Nanosized powders of TiO2 (anatase) were prepared by the hydrothermal method, acid-medium hydrolysis or by vacuum freeze-drying of sols, and annealing at temperatures <700-degrees-C. Photocatalytic activities of these powders in the mineralization of phenol, were evaluated in comparison to that of Degussa P25. Kinetic data indicated that surface hydroxylation had a retarding effect on the degradation of phenol. Formation of stable peroxotitanium species were observed on hydroxylated powders, whereas only V(Ti)-O- hole trap centres were detected by EPR on the heat treated samples. The data supports direct hole oxidation of the substrate preadsorbed on the photocatalyst, which is otherwise blocked by surface hydroxyls.