Retrieval and Multi-scale Validation of Soil Moisture from Multi-temporal SAR Data in a Semi-Arid Tropical Region

The current study presents an algorithm to retrieve surface Soil Moisture (SM) from multi-temporal Synthetic Aperture Radar (SAR) data. The developed algorithm is based on the Cumulative Density Function (CDF) transformation of multi-temporal RADARSAT-2 backscatter coefficient (BC) to obtain relative SM values, and then converts relative SM values into absolute SM values using soil information. The algorithm is tested in a semi-arid tropical region in South India using 30 satellite images of RADARSAT-2, SMOS L2 SM products, and 1262 SM field measurements in 50 plots spanning over 4 years. The validation with the field data showed the ability of the developed algorithm to retrieve SM with RMSE ranging from 0.02 to 0.06 m(3)/m(3) for the majority of plots. Comparison with the SMOS SM showed a good temporal behaviour with RMSE of approximately 0.05 m(3)/m(3) and a correlation coefficient of approximately 0.9. The developed model is compared and found to be better than the change detection and delta index model. The approach does not require calibration of any parameter to obtain relative SM and hence can easily be extended to any region having time series of SAR data available.

Ancilla-assisted measurements on quantum ensembles: general protocols and applications in NMR quantum information processing

Quantum ensembles form easily accessible architectures for studying various phenomena in quantum physics, quantum information science and spectroscopy. Here we review some recent protocols for measurements in quantum ensembles by utilizing ancillary systems. We also illustrate these protocols experimentally via nuclear magnetic resonance techniques. In particular, we shall review noninvasive measurements, extracting expectation values of various operators, characterizations of quantum states and quantum processes, and finally quantum noise engineering.

An evolutionary formalism for weak quantum measurements

Unitary evolution and projective measurement are fundamental axioms of quantum mechanics. Even though projective measurement yields one of the eigenstates of the measured operator as the outcome, there is no theory that predicts which eigenstate will be observed in which experimental run. There exists only an ensemble description, which predicts probabilities of various outcomes over many experimental runs. We propose a dynamical evolution equation for the projective collapse of the quantum state in individual experimental runs, which is consistent with the well-established framework of quantum mechanics. In case of gradual weak measurements, its predictions for ensemble evolution are different from those of the Born rule. It is an open question whether or not suitably designed experiments can observe this alternate evolution.

A Study of Pressure-Dependent Squeeze Film Stiffness as a Resonance Modulator Using Static and Dynamic Measurements

We report on the resonant frequency modulation of inertial microelectromechanical systems (MEMS) structures due to squeeze film stiffness over a range of working pressures. Squeeze film effects have been studied extensively, but mostly in the context of damping and Q-factor determination of dynamic MEMS structures, typically suspended over a fixed substrate with a very thin air gap. Here, we show with experimental measurements and analytical calculations how the pressure-dependent air springs (squeeze film stiffness) change the resonant frequency of an inertial MEMS structure by as much as five times. For capturing the isolated effect of the squeeze film stiffness, we first determine the static stiffness of our structure with atomic force microscope probing and then study the effect of the air spring by measuring the dynamic response of the structure, thus finding the resonant frequencies while varying the air pressure from 1 to 905 mbar. We also verify our results by analytical and Finite Element Method calculations. Our findings show that the pressure-dependent squeeze film stiffness can affect a rather huge range of frequency modulation (>400%) and, therefore, can be used as a design parameter for exploiting this effect in MEMS devices. 2014-0310]

Peristaltic pump-based low range pressure sensor calibration system

Peristaltic pumps were normally used to pump liquids in several chemical and biological applications. In the present study, a peristaltic pump was used to pressurize the chamber (positive as well negative pressures) using atmospheric air. In the present paper, we discuss the development and performance study of an automatic pressurization system to calibrate low range (millibar) pressure sensors. The system includes a peristaltic pump, calibrated pressure sensor (master sensor), pressure chamber, and the control electronics. An in-house developed peristaltic pump was used to pressurize the chamber. A closed loop control system has been developed to detect and adjust the pressure leaks in the chamber. The complete system has been integrated into a portable product. The system performance has been studied for a step response and steady state errors. The system is portable, free from oil contaminants, and consumes less power compared to existing pressure calibration systems. The veracity of the system was verified by calibrating an unknown diaphragm based pressure sensor and the results obtained were satisfactory. (C) 2015 AIP Publishing LLC.

Real-Time Stress Measurements in Germanium Thin Film Electrodes during Electrochemical Lithiation/Delithiation Cycling

An in situ study of stress evolution and mechanical behavior of germanium as a lithium-ion battery electrode material is presented. Thin films of germanium are cycled in a half-cell configuration with lithium metal foil as counter/reference electrode, with 1M LiPF6 in ethylene carbonate, diethyl carbonate, dimethyl carbonate solution (1:1:1, wt%) as electrolyte. Real-time stress evolution in the germanium thin-film electrodes during electrochemical lithiation/delithiation is measured by monitoring the substrate curvature using the multi-beam optical sensing method. Upon lithiation a-Ge undergoes extensive plastic deformation, with a peak compressive stress reaching as high as -0.76 +/- 0.05 GPa (mean +/- standard deviation). The compressive stress decreases with lithium concentration reaching a value of approximately -0.3 GPa at the end of lithiation. Upon delithiation the stress quickly became tensile and follows a trend that mirrors the behavior on compressive side; the average peak tensile stress of the lithiated Ge samples was approximately 0.83 GPa. The peak tensile stress data along with the SEM analysis was used to estimate a lower bound fracture resistance of lithiated Ge, which is approximately 5.3 J/m(2). It was also observed that the lithiated Ge is rate sensitive, i.e., stress depends on how fast or slow the charging is carried out. (C) The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. All rights reserved.

Probing 2D black phosphorus by quantum capacitance measurements

Two-dimensional materials and their heterostructures have emerged as a new class of materials, not only for fundamental physics but also for electronic and optoelectronic applications. Black phosphorus (BP) is a relatively new addition to this class of materials. Its strong in-plane anisotropy makes BP a unique material for making conceptually new types of electronic devices. However, the global density of states (DOS) of BP in device geometry has not been measured experimentally. Here, we report the quantum capacitance measurements together with the conductance measurements on an hBN-protected few-layer BP (similar to six layers) in a dual-gated field effect transistor (FET) geometry. The measured DOS from our quantum capacitance is compared with density functional theory (DFT). Our results reveal that the transport gap for quantum capacitance is smaller than that in conductance measurements due to the presence of localized states near the band edge. The presence of localized states is confirmed by the variable range hopping seen in our temperature dependence conductivity. A large asymmetry is observed between the electron and hole side. This asymmetric nature is attributed to the anisotropic band dispersion of BP. Our measurements establish the uniqueness of quantum capacitance in probing the localized states near the band edge, hitherto not seen in conductance measurements.

In-situ flexural OPV measurements on flexible glass substrate

In-situ dark and light IV characteristics of inverted P3HT-PCBM devices on flexible glass substrates were measured while bending. Bending set up was simple and home built with servo controlled 2 parallel plate movements. ITO was sputter coated onto the thin flexible glass sheets of 25mmx25mm size in the lab. OPV devices were fabricated inside the glove box and conversion efficiency measured was about 2.8%. Bending of the device substrates and simultaneous PV measurements were carried out in ambient conditions. It was observed that the J(SC) and efficiency increased until the substrate breaking point but the V-OC and fill factor remained unchanged.