334 resultados para Ambient pressure drying


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Effect of pressure on the dielectric properties of ferroelectric DTAAP has been carried out upto about 4 Kbars. The dTc/dP value was found to be -1.65°C/Kbar. It was noted that the value of dTc/dP is 1.63 times smaller in DTAAP as compared to TAAP, where as Tc itself is 1.13 times larger.

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The effect of pressure on non-ohmic conduction and electrical switching in the charge transfer complex benzidine-DDQ has been studied up to a pressure of 7·66 GPa at a temperature of 300K. Pulsed I-V measurements reveal heating contribution to non-ohmicity and switching. At high electric fields (∼ 3 × 103 V/cm), the sample switches from high resistance OFF state of several kiloohms to low resistance ON state of several ohms. Temperature dependence of conductivity of ON state show semiconducting behaviour with very low activation energy.

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Pressure and temperature dependence of 35Cl nuclear quadrupole resonance (NQR) has been investigated in NaClO3 and Ba(ClO3)2·H2O. NQR frequencies are measured in the temperature range 77–300 K and up to 5 kbar pressure. The torsional frequency of the ClO3 pyramid and its variation with both pressure and temperature are evaluated from the NQR frequencies under the harmonic approximation. In general, the pressure effect on the internal motions is found to be less in Ba (ClO3)2·H2O compared to NaClO3. When the samples are cooled to 77 K the pressure coeffecient of NQR frequency becomes nearly zero in sodium chlorate, whereas it retains a value of 6 kHz kbar−1 in barium chlorate. This behaviour follows from the fact that at 77K, the torsional frequency in NaClO3 is unaffected by the application of pressure while it increases at the rate 12 cm−1 kbar−1 in Ba(ClO3)2·H2O.

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The equilibrium pressure of calcium corresponding to the reduction reaction 6CaO (s) + 2Al (l) half-arrow-right-over-half-arrow-left 3CaO.Al2O3 (s) + 3Ca (g) has been measured by Knudsen effusion - mass loss analysis in the temperature range 1190 - 1500 K. The measured vapour pressure can be expressed as a function of temperature by the relation: log p(Ca) (Pa) = -10,670/T + 9.267 The calcium generated is partially absorbed by aluminium to form an alloy. The equilibrium composition of the alloy at 1373 K was found to be 22 mol% Ca - 78 mol% Al. The measured vapour pressure is in good agreement with that computed from thermodynamic data.

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The pressure dependence of critical parameters xc, Tc, and β have been analysed in four systems namely cyclohexane + acetic anhydride, n-heptane + acetic anhydride, methanol + n-heptane, and carbon disulphide + acetonitrile. The separation temperature was found to increase linearly with pressure the value of dTc/dP being 28 mK, 11 mK, 22 mK, and 25 mK respectively. These are in fair agreement with earlier measurements available for two systems. For the methanol + n-heptane system dTc/dP is apparently not consistent with the value predicted from the specific heat and thermal expansion data.Die Druckabhängigkeit der kritischen Parameter xc, Tc und β ist in den vier Systemen Cyclohexan + Essigsäureanhydrid, n-Heptan + Essigsäureanhydrid, Methanol + n-Heptan und Schwefelkohlenstoff + Acetonitril analysiert worden. Es wurde gefunden, daß die kritische Temperatur linear mit dem Druck ansteigt. Die Werte für dTc/dP betragen 28 mK, 11 mK, 22 mK und 25 mK. Sie sind in guter überein-stimmung mit früheren Messungen an zweien dieser Systeme. Für Methanol + n-Heptan stimmt der Wert für dT/dP offensichtlich nicht mit Werten, die mit Hilfe von Daten für die spezifische Wärme und die thermische Ausdehnung vorhergesagt wurden, überein.

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Experimental studies on the measurement of pressure fields in the region of separating and reattaching flows behind several two-dimensional fore-bodies and one axisymmetric body are reported. In particular, extensive measurements of mean pressure, surface pressure fluctuation, and pressure fluctuation within the flow were made for a series of two-dimensional fore-body shapes consisting of triangular nose with varying included angle. The measurements from different bodies are compared and one of the important findings is that the maximum values of rms pressure fluctuation levels in the shear layer approaching reattachment are almost equal to the maximum value of the surface fluctuation levels.

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The performance of a pressure transducer with meandering-path thin film strain gauges has been studied. Details of the procedure followed to prepare the thin film strain gauge system on the pressure transducer diaphragm are given. The effect of post-deposition heat treatment on the resistance of the sensing films of the strain gauges and the insulating base layers are discussed. The output of the pressure transducer was studied with various input pressures and excitation voltages. It was found that up to a maximum of 10 V bridge excitation the output was stable and repetitive. The maximum non-linearity and hysteresis observed are ±0.15%, ±0.16% and ±0.14% FSO (full-scale output) for 5, 7.5 and 10 V excitation respectively. Information on the output behaviour of the pressure transducer with temperature is also included.

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A diaphragm-type pressure transducer with a sputtered platinum film strain gauge (sensing film) has been designed and fabricated. The various steps followed to prepare thin film strain gauges on the diaphragm are described. M-bond 450 adhesive (Measurements Group, USA) has been employed as the insulating layer. A detailed procedure to cure this layer is given. A d.c. sputtering method is employed to prepare the platinum films. This paper also includes details of the strain gauge pattern and its location on the diaphragm. A description of the output characteristics and overall behaviour of the platinum thin film pressure transducer is reported.

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The dc electrical conductivity of TlInX2 (X = Se, Te) single crystals, parallel and perpendicular to the (001) c-axis is studied under high quasi-hydrostatic pressure up to 7.0 GPa, at room temperature. Conductivity measurements parallel to the c-axis are carried out at high pressures and down to liquid nitrogen temperatures. These materials show continuous metallization under pressure. Both compounds have almost the same pressure coefficient of the electrical activation energy parallel to the c-axis, d(ΔE∥)/dP = −2.9 × 10−10 eV/Pa, which results from the narrowing of the band gap under pressure. The results are discussed in the light of the band structure of these compounds.

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High pressure electrical resistivity measurements were carried out on GexSe100-x (0 less-than-or-equal-to x less-than-or-equal-to 40) glasses at ambient and low temperatures using the Bridgman anvil system. All the melt quenched glasses show a discontinuous glassy semiconductor to crystalline metal transition at high pressures. The high pressure phases of Ge-Se samples do not correspond to any of the equilibrium phases of the system. Additionally, the variation of transition pressure (P(T)), ambient resistivity (rho0) and the activation energy (DELTAE(t)) with composition, exhibit a change in behaviour at x = 20 and 33. The unusual variations observed in these glasses are discussed in the light of chemical and percolation thresholds occurring in the glassy system.