An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si

The integration of Metal Organic Chemical Vapor Deposition (MOCVD) grown group III-A nitride device stacks on Si (111) substrates is critically dependent on the quality of the first AlN buffer layer grown. A Si surface that is both oxide-free and smooth is a primary requirement for nucleating such layers. A single parameter, the AlN layer growth stress, is shown to be an early (within 50 nm), clear (<0.5 GPa versus > 1GPa), and fail-safe indicator of the pre-growth surface, and the AlN quality required for successful epitaxy. Grain coalescence model for stress generation is used to correlate growth stress, the AlN-Si interface, and crystal quality. (C) 2013 AIP Publishing LLC.

A systematic investigation of fracture mechanisms in Al-Si based eutectic alloy-Effect of Si modification

The fracture characteristics of Al-Si based eutectic alloy are investigated in the unmodified and modified conditions under compression. The investigations are carried out at different strain rates and temperatures. Fracture of the alloy starts with eutectic Si particle fracture and modification plays an important role in particle fracture. The fraction of fractured particles is found to be always lesser in the modified condition than in the unmodified condition. Particle fracture increases with increase in strain. It is found that the Si particle fracture shows an increase with increase in strain rate and decreases with increase in temperature at 10% strain. Large and elongated particles show a greater tendency for fracture in the unmodified and modified conditions. Particle orientation plays an important role on fracture and the cracks are found to occur almost in a direction normal to the tensile strain imposed upon the particles by the deforming matrix in the unmodified alloy. The modified alloy shows a random distribution of fractured particles and crack orientation. The criteria of fracture based on dislocation pile-up mechanism and fiber loading explain the observed difference in particle fracture characteristics due to modification. The particle fracture for the modified alloy is also discussed in terms of Weibull statistics and the existing models of dispersion hardening. Particle/matrix interface decohesion is observed at higher strain rates and temperatures in the modified alloy. Dendritic rotation of 10 degrees is also observed at higher strain rates, which can increase the amount of particle fracture. (C) 2013 Elsevier B.V. All rights reserved.

Mechanical and electronic properties of pristine and Ni-doped Si, Ge, and Sn sheets

Silicene, a graphene analogue of silicon, has been generating immense interest due to its potential for applications in miniaturized devices. Unlike planar graphene, silicene prefers a buckled structure. Here we explore the possibility of stabilizing the planar form of silicene by Ni doping using first principles density functional theory based calculations. It is found that planar as well as buckled structure is stable for Ni-doped silicene, but the buckled sheet has slightly lower total energy. The planar silicene sheet has unstable phonon modes. A comparative study of the mechanical properties reveals that the in-plane stiffness of both the pristine and the doped planar silicene is higher compared to that of the buckled silicene. This suggests that planar silicene is mechanically more robust. Electronic structure calculations of the planar and buckled Ni-doped silicene show that the energy bands at the Dirac point transform from linear behavior to parabolic dispersion. Furthermore, we extend our study to Ge and Sn sheets that are also stable and the trends of comparable mechanical stability of the planar and buckled phases remain the same.

Electrical switching behavior of amorphous Ge15Te85 Si--x(x) thin films with phase change memory applications

Amorphous Ge15Te85-xSix thin film switching devices (1 <= x <= 6) have been deposited in sandwich geometry, on glass substrates with aluminum electrodes, by flash evaporation technique. These devices exhibit memory type electrical switching, like bulk Ge15Te85-xSix glasses. However, unlike the bulk glasses, a-Ge15Te85-xSix films exhibit a smooth electrical switching behavior. The electrical switching fields of a-Ge15Te85-xSix thin film samples are also comparable with other chalcogenide samples used in memory applications. The switching fields of a-Ge15Te85-xSix films have been found to increase with increasing Si concentration. Also, the optical band gap of a-Ge15Te85-xSix films is found to increase with Si content. The observed results have been understood on the basis of increase in network connectivity and rigidity with Si addition. (C) 2013 Elsevier Ltd. All rights reserved.

Reactive diffusion in the Ti-Si system and the significance of the parabolic growth constant

Solid diffusion couple experiments are conducted to analyse the growth mechanism of the phases and the diffusion mechanism of the components in the Ti-Si system. The calculation of the parabolic growth constants and the integrated diffusion coefficients substantiates that the analysis is intrinsically prone to erroneous conclusions if it is based on just the parabolic growth constants determined for a multiphase interdiffusion zone. The location of the marker plane is detected based on the uniform grain morphology in the TiSi2 phase, which indicates that this phase grows mainly because of Si diffusion. The growth mechanism of the phases and morphological evolution in the interdiffusion zone are explained with the help of imaginary diffusion couples. The activation enthalpies for the integrated diffusion coefficient of TiSi2 and the Si tracer diffusion are calculated as 190 +/- 9 and 197 +/- 8 kJ/mol, respectively. The crystal structure, details on the nearest neighbours of the components, and their relative mobilities indicate that the vacancies are mainly present on the Si sublattice.

Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

Role of different factors affecting interdiffusion in Cu(Ga) and Cu(Si) solid solutions

A detailed diffusion study was carried out on Cu(Ga) and Cu(Si) solid solutions in order to assess the role of different factors in the behaviour of the diffusing components. The faster diffusing species in the two systems, interdiffusion, intrinsic and impurity diffusion coefficients, are determined to facilitate the discussion. It was found that Cu was more mobile in the Cu-Si system, whereas Ga was the faster diffusing species in the Cu-Ga system. In both systems, the interdiffusion coefficients increased with increasing amount of solute (e.g. Si or Ga) in the matrix (Cu). Impurity diffusion coefficients for Si and Ga in Cu, found out by extrapolating interdiffusion coefficient data to zero composition of the solute, were both higher than the Cu tracer diffusion coefficient. These observed trends in diffusion behaviour could be rationalized by considering: (i) formation energies and concentration of vacancies, (ii) elastic moduli (indicating bond strengths) of the elements and (iii) the interaction parameters and the related thermodynamic factors. In summary, we have shown here that all the factors introduced in this paper should be considered simultaneously to understand interdiffusion in solid solutions. Otherwise, some of the aspects may look unusual or even impossible to explain.

Self Catalytic Growth of Indium Oxide (In2O3) Nanowires by Resistive Thermal Evaporation

Self catalytic growth of Indium Oxide (In2O3) nanowires (NWs) have been grown by resistive thermal evaporation of Indium (In) in the presence of oxygen without use of any additional metal catalyst. Nanowires growth took place at low substrate temperature of 370-420 degrees C at an applied current of 180-200 A to the evaporation boat. Morphology, microstructures, and compositional studies of the grown nanowires were performed by employing field emission scanning electron microscopy (FESEM), X-Ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) respectively. Nanowires were uniformly grown over the entire Si substrate and each of the nanowire is capped with a catalyst particle at their end. X-ray diffraction study reveals the crystalline nature of the grown nanowires. Transmission electron microscopy study on the nanowires further confirmed the single crystalline nature of the nanowires. Energy dispersive X-ray analysis on the nanowires and capped nanoparticle confirmed that Indium act as catalyst for In2O3 nanowires growth. A self catalytic Vapor-Liquid-Solid (VLS) growth mechanism was responsible for the growth of In2O3 nanowires. Effect of oxygen partial pressure variation and variation of applied currents to the evaporation boat on the nanowires growth was systematically studied. These studies concluded that at oxygen partial pressure in the range of 4 x 10(-4), 6 x 10(-4) mbar at applied currents to the evaporation boat of 180-200 A were the best conditions for good nanowires growth. Finally, we observed another mode of VLS growth along with the standard VLS growth mode for In2O3 nanowires similar to the growth mechanism reported for GaAs nanowires.

Effect of Post-Deposition Annealing on the Al2O3/Si(100) Interface Properties

In the present investigation, Al2O3 thin films were deposited onto Si < 100 > substrates by DC reactive magnetron sputtering. The films were annealed in vacuum for one hour at 623, 823 and 1023 K. The composition of the films was quantitatively estimated using X-ray photoelectron spectroscopy (XPS) and the O/Al ratio was found be in the range 1.19 to 1.43. Grazing incidence X-ray diffraction (GIXRD) results revealed that the annealed films are amorphous in nature. Cross sectional transmission electron microscopy (X-TEM) analysis was carried out to study the microstructure and nature of the Al2O3-Si interface as a function of post-deposition annealing. TEM results revealed the presence of nanocrystalline gamma-Al2O3 in the annealed films and an amorphous interface layer was observed at the Al2O3 Si interface. The thickness of the amorphous interface layer was determined from the TEM analysis and the results are discussed.

Influence of sputter power on structural and electrical properties of TiO2 films for Al/TiO2/Si gate capacitors

Titanium dioxide (TiO2) thin films were deposited onto p-Si substrates held at room temperature by reactive Direct Current (DC) magnetron sputtering at various sputter powers in the range 80-200W. The as-deposited TiO2 films were annealed at a temperature of 1023K. The post-annealed films were characterized for crystallographic structure, chemical binding configuration, surface morphology and optical absorption. The electrical and dielectric properties of Al/TiO2/p-Si structure were determined from the capacitance-voltage and current-voltage characteristics. X-ray diffraction studies confirmed that the as-deposited films were amorphous in nature. After post-annealing at 1023K, the films formed at lower powers exhibited anatase phase, where as those deposited at sputter powers >160W showed the mixed anatase and rutile phases of TiO2. The surface morphology of the films varied significantly with the increase of sputter power. The electrical and dielectric properties on the air-annealed Al/TiO2/p-Si structures were studied. The effect of sputter power on the electrical and dielectric characteristics of the structure of Al/TiO2/p-Si (metal-insulator-semiconductor) was systematically investigated. Copyright (c) 2014 John Wiley & Sons, Ltd.

Room temperature electrical spin injection into GaAs by an oxide spin injector

Spin injection, manipulation and detection are the integral parts of spintronics devices and have attracted tremendous attention in the last decade. It is necessary to judiciously choose the right combination of materials to have compatibility with the existing semiconductor technology. Conventional metallic magnets were the first choice for injecting spins into semiconductors in the past. So far there is no success in using a magnetic oxide material for spin injection, which is very important for the development of oxide based spintronics devices. Here we demonstrate the electrical spin injection from an oxide magnetic material Fe3O4, into GaAs with the help of tunnel barrier MgO at room temperature using 3-terminal Hanle measurement technique. A spin relaxation time tau similar to 0.9 ns for n-GaAs at 300 K is observed along with expected temperature dependence of t. Spin injection using Fe3O4/MgO system is further established by injecting spins into p-GaAs and a tau of similar to 0.32 ns is obtained at 300 K. Enhancement of spin injection efficiency is seen with barrier thickness. In the field of spin injection and detection, our work using an oxide magnetic material establishes a good platform for the development of room temperature oxide based spintronics devices.

Quantitative Strain and Compositional Studies of InxGa1-xAs Epilayer in a GaAs-based pHEMT Device Structure by TEM Techniques

In GaAs-based pseudomorphic high-electron mobility transistor device structures, strain and composition of the InxGa1 (-) As-x channel layer are very important as they influence the electronic properties of these devices. In this context, transmission electron microscopy techniques such as (002) dark-field imaging, high-resolution transmission electron microscopy (HRTEM) imaging, scanning transmission electron microscopy-high angle annular dark field (STEM-HAADF) imaging and selected area diffraction, are useful. A quantitative comparative study using these techniques is relevant for assessing the merits and limitations of the respective techniques. In this article, we have investigated strain and composition of the InxGa1 (-) As-x layer with the mentioned techniques and compared the results. The HRTEM images were investigated with strain state analysis. The indium content in this layer was quantified by HAADF imaging and correlated with STEM simulations. The studies showed that the InxGa1 (-) As-x channel layer was pseudomorphically grown leading to tetragonal strain along the 001] growth direction and that the average indium content (x) in the epilayer is similar to 0.12. We found consistency in the results obtained using various methods of analysis.

Effect of port gas injection on in-cylinder stratification in a CNG fuelled SI engine

The concept of barrel stratification of air-fuel mixture is evaluated for a port gas injection (PGI) single cylinder spark ignition (SI) internal combustion (IC) engine using a transient three-dimensional computational fluid dynamic (CFD) model. The gaseous fuel used in the study is compressed natural gas (CNG). It is observed that compared to the premixed gas carburettor case, a substantial amount of in-cylinder stratification can be achieved with port gas injection system. A detailed parametric study is reported to understand the effect of the various injection parameters such as injection location, injection orientation, start of injection (SOT) and its duration, and injection rate. Furthermore, the best injection timing is evaluated for various load and speed cases. It is observed that the best stratification pattern can be achieved at 50% engine load. The injection location is observed to have a profound effect on the in-cylinder stratification pattern, and injection towards the side of the spark plug is observed to give a rich fuel-air mixture near the spark plug. It is also shown that there exists an optimal injection pressure.

In-cylinder investigations and analysis of a SI gas engine fuelled with H-2 and CO rich syngas fuel: Sensitivity analysis of combustion descriptors for engine diagnostics and control

The sensitivity of combustion phasing and combustion descriptors to ignition timing, load and mixture quality on fuelling a multi-cylinder natural gas engine with bio-derived H-2 and CO rich syngas is addressed. While the descriptors for conventional fuels are well established and are in use for closed loop engine control, presence of H-2 in syngas potentially alters the mixture properties and hence combustion phasing, necessitating the current study. The ability of the descriptors to predict abnormal combustion, hitherto missing in the literature, is also addressed. Results from experiments using multi-cylinder engines and numerical studies using zero dimensional Wiebe function based simulation models are reported. For syngas with 20% H-2 and CO and 2% CH4 (producer gas), an ignition retard of 5 +/- 1 degrees was required compared to natural gas ignition timing to achieve peak load of 72.8 kWe. It is found that, for syngas, whose flammability limits are 0.42-1.93, the optimal engine operation was at an equivalence ratio of 1.12. The same methodology is extended to a two cylinder engine towards addressing the influence of syngas composition, especially H-2 fraction (varying from 13% to 37%), on the combustion phasing. The study confirms the utility of pressure trace derived combustion descriptors, except for the pressure trace first derivative, in describing the MBT operating condition of the engine when fuelled with an alternative fuel. Both experiments and analysis suggest most of the combustion descriptors to be independent of the engine load and mixture quality. A near linear relationship with ignition angle is observed. The general trend(s) of the combustion descriptors for syngas fuelled operation are similar to those of conventional fuels; the differences in sensitivity of the descriptors for syngas fuelled engine operation requires re-calibration of control logic for MBT conditions. Copyright (C) 2014, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.

Reactive Diffusion in the Re-Si System

A study on reactive diffusion is conducted in the Re-Si system. According to the study, ReSi1.8 phase grows with much higher thickness than the Re2Si phase, in the interdiffusion zone of bulk diffusion couples. The activation energy for integrated diffusion of ReSi1.8 is estimated to be 605 +/- 23 kJ/mol. The growth of the Re2Si phase is studied by considering an incremental diffusion couple of Re/ReSi1.8. Analysis based on the calculation of integrated diffusion coefficients indicates the reason underlying the observed high difference between the growth rates of the ReSi1.8 and Re2Si phases.