Physics and chemistry of CdTe/CdS thin film heterojunction photovoltaic devices: fundamental and critical aspects

Among the armoury of photovoltaic materials, thin film heterojunction photovoltaics continue to be a promising candidate for solar energy conversion delivering a vast scope in terms of device design and fabrication. Their production does not require expensive semiconductor substrates and high temperature device processing, which allows reduced cost per unit area while maintaining reasonable efficiency. In this regard, superstrate CdTe/CdS solar cells are extensively investigated because of their suitable bandgap alignments, cost effective methods of production at large scales and stability against proton/electron irradiation. The conversion efficiencies in the range of 6-20% are achieved by structuring the device by varying the absorber/window layer thickness, junction activation/annealing steps, with more suitable front/back contacts, preparation techniques, doping with foreign ions, etc. This review focuses on fundamental and critical aspects like: (a) choice of CdS window layer and CdTe absorber layer; (b) drawbacks associated with the device including environmental problems, optical absorption losses and back contact barriers; (c) structural dynamics at CdS-CdTe interface; (d) influence of junction activation process by CdCl2 or HCF2Cl treatment; (e) interface and grain boundary passivation effects; (f) device degradation due to impurity diffusion and stress; (g) fabrication with suitable front and back contacts; (h) chemical processes occurring at various interfaces; (i) strategies and modifications developed to improve their efficiency. The complexity involved in understanding the multiple aspects of tuning the solar cell efficiency is reviewed in detail by considering the individual contribution from each component of the device. It is expected that this review article will enrich the materials aspects of CdTe/CdS devices for solar energy conversion and stimulate further innovative research interest on this intriguing topic.

Time-Based All-Digital Technique for Analog Built-in Self-Test

A scheme for built-in self-test of analog signals with minimal area overhead for measuring on-chip voltages in an all-digital manner is presented. The method is well suited for a distributed architecture, where the routing of analog signals over long paths is minimized. A clock is routed serially to the sampling heads placed at the nodes of analog test voltages. This sampling head present at each test node, which consists of a pair of delay cells and a pair of flip-flops, locally converts the test voltage to a skew between a pair of subsampled signals, thus giving rise to as many subsampled signal pairs as the number of nodes. To measure a certain analog voltage, the corresponding subsampled signal pair is fed to a delay measurement unit to measure the skew between this pair. The concept is validated by designing a test chip in a UMC 130-nm CMOS process. Sub-millivolt accuracy for static signals is demonstrated for a measurement time of a few seconds, and an effective number of bits of 5.29 is demonstrated for low-bandwidth signals in the absence of sample-and-hold circuitry.

Direct hexagonal transition of amorphous (Ge2Sb2Te5)(0.9)Se-0.1 thin films

Ge2Sb2Te5 (GST) is well known for its phase change properties and applications in memory and data storage. Efforts are being made to improve its thermal stability and transition between amorphous and crystalline phases. Various elements are doped to GST to improve these properties. In this work, Se has been doped to GST to study its effect on phase change properties. Amorphous GST film crystallized in to rock salt (NaCl) type structure at 150 degrees C and then transformed to hexagonal structure at 250 degrees C. Interestingly, Se doped GST ((GST)(0.9)Se-0.1) film crystallized directly into hexagonal phase and the intermediate phase of NaCl is not observed. The crystallization temperature (T-c) of (GST)(0.9)Se-0.1 is around 200 degrees C, which is 50 degrees C higher than the T-c of GST. For (GST)(0.9)Se-0.1, the threshold switching occurs at about 4.5V which is higher than GST (3 V). Band gap (E-opt) values of as deposited films are calculated from Tauc plot which are 0.63 eV for GST and 0.66 eV for (GST)(0.9)Se-0.1. The E-opt decreases for the films annealed at higher temperatures. The increased T-c, E-opt, the contrast in resistance and the direct transition to hexagonal phase may improve the data readability and thermal stability in the Se doped GST film. (C) 2014 AIP Publishing LLC.

Revisiting some physics issues related to the new mass limit for magnetized white dwarfs

We clarify important physics issues related to the recently established new mass limit for magnetized white dwarfs which is significantly super-Chandrasekhar. The issues include, justification of high magnetic field and the corresponding formation of stable white dwarfs, contribution of the magnetic field to the total density and pressure, flux freezing, variation of magnetic field and related currents therein. We also attempt to address the observational connection of such highly magnetized white dwarfs.

Ultrasonic guided wave sensing properties of PVDF thin film with inter digital electrodes

Ultrasonic strain sensing performance of the large area PVDF with Inter Digital Electrodes (IDE) is studied in this work. Procedure to obtain IDE on a beta-phase PVDF is explained. PVDF film with IDE is bonded on a plate structure and is characterized for its directional sensitivity at different frequencies. Guided waves are induced on the IDE-PVDF sensor from different directions by placing a piezoelectric wafer actuator at different angles. Strain induced on the IDE-PVDF sensor by the guided waves in estimated by using a Laser Doppler Vibrometer (LDV) and a wave propagation model. Using measured voltage response from IDE-PVDF sensor and the strain measurements from LDV the piezoelectric coefficient is estimated in various directions. The variation of 11 e at different angles shows directional sensitivity of the IDE-PVDF sensor to the incident guided waves. The present study provides an effective technique to characterize thin film piezoelectric sensors for ultrasonic strain sensing at very high frequencies of 200 kHz. Often frequency of the guided wave is changed to alter the wavelength to interrogate damages of different sizes in Structural Health Monitoring (SHM) applications. The unique property of directional sensitivity combined with frequency tunability makes the IDE-PVDF sensor most suitable for SHM of structures.

New physics in e(+)e(-) -> Z(gamma) at the ILC with polarized beams: explorations beyond conventional anomalous triple gauge boson couplings

One of the most-studied signals for physics beyond the standard model in the production of gauge bosons in electron-positron collisions is due to the anomalous triple gauge boson couplings in the Z(gamma) final state. In this work, we study the implications of this at the ILC with polarized beams for signals that go beyond traditional anomalous triple neutral gauge boson couplings. Here we report a dimension-8 CP-conserving Z(gamma)Z vertex that has not found mention in the literature. We carry out a systematic study of the anomalous couplings in general terms and arrive at a classification. We then obtain linear-order distributions with and without CP violation. Furthermore, we place the study in the context of general BSM interactions represented by e(+)e(-)Z(gamma) contact interactions. We set up a correspondence between the triple gauge boson couplings and the four-point contact interactions. We also present sensitivities on these anomalous couplings, which will be achievable at the ILC with realistic polarization and luminosity.

Influence of curvature on the device physics of thin film transistors on flexible substrates

Thin film transistors (TFTs) on elastomers promise flexible electronics with stretching and bending. Recently, there have been several experimental studies reporting the behavior of TFTs under bending and buckling. In the presence of stress, the insulator capacitance is influenced due to two reasons. The first is the variation in insulator thickness depending on the Poisson ratio and strain. The second is the geometric influence of the curvature of the insulator-semiconductor interface during bending or buckling. This paper models the role of curvature on TFT performance and brings to light an elegant result wherein the TFT characteristics is dependent on the area under the capacitance-distance curve. The paper compares models with simulations and explains several experimental findings reported in literature. (C) 2014 AIP Publishing LLC.

Indigenous Development of an Imaging Flow Cytometer for Clinical and Biological Applications

Flow cytometry is a benchmark technique used for basic research and clinical diagnosis of various diseases. Despite being a high-throughput technique, it fails in capturing the morphology of cells being analyzed. Imaging flow cytometry is a combination of flow-cytometry and digital microscopy, which offers advantages of both the techniques. In this paper, we report on the development of an indigenous Imaging Flow Cytometer, realized with the combination of Optics, Microfluidics, and High-speed imaging. A custom-made bright-field transmission microscope is used to capture images of cells flowing across the microfluidic device. High-throughput morphological analysis on suspension of yeast cells is presented.

Oxygen-participated electrochemistry of new lithium-rich layered oxides Li3MRuO5 M = Mn, Fe)

We describe the synthesis, crystal structure and lithium deinsertion-insertion electrochemistry of two new lithium-rich layered oxides, Li3MRuO5 (M = Mn, Fe), related to rock salt based Li2MnO3 and LiCoO2. The Li3MnRuO5 oxide adopts a structure related to Li2MnO3 (C2/m) where Li and (Li0.2Mn0.4Ru0.4) layers alternate along the c-axis, while the Li3FeRuO5 oxide adopts a near-perfect LiCoO2 (R (3) over barm) structure where Li and (Li0.2Fe0.4Ru0.4) layers are stacked alternately. Magnetic measurements indicate for Li3MnRuO5 the presence of Mn3+ and low spin configuration for Ru4+ where the itinerant electrons occupy a pi*-band. The onset of a net maximum in the chi vs. T plot at 9.5 K and the negative value of the Weiss constant (theta) of -31.4 K indicate the presence of antiferromagnetic superexchange interactions according to different pathways. Lithium electrochemistry shows a similar behaviour for both oxides and related to the typical behaviour of Li-rich layered oxides where participation of oxide ions in the electrochemical processes is usually found. A long first charge process with capacities of 240 mA h g(-1) (2.3 Li per f.u.) and 144 mA h g(-1) (1.38 Li per f.u.) is observed for Li3MnRuO5 and Li3FeRuO5, respectively. An initial sloping region (OCV to ca. 4.1 V) is followed by a long plateau (ca. 4.3 V). Further discharge-charge cycling points to partial reversibility (ca. 160 mA h g(-1) and 45 mA h g(-1) for Mn and Fe, respectively). Nevertheless, just after a few cycles, cell failure is observed. X-ray photoelectron spectroscopy (XPS) characterisation of both pristine and electrochemically oxidized Li3MRuO5 reveals that in the Li3MnRuO5 oxide, Mn3+ and Ru4+ are partially oxidized to Mn4+ and Ru5+ in the sloping region at low voltage, while in the long plateau, O2- is also oxidized. Oxygen release likely occurs which may be the cause for failure of cells upon cycling. Interestingly, some other Li-rich layered oxides have been reported to cycle acceptably even with the participation of the O2- ligand in the reversible redox processes. In the Li3FeRuO5 oxide, the oxidation process appears to affect only Ru (4+ to 5+ in the sloping region) and O2- (plateau) while Fe seems to retain its 3+ state.

A Digital Frequency Multiplication Technique for Energy Efficient Transmitters

A logic gate-based digital frequency multiplication technique for low-power frequency synthesis is presented. The proposed digital edge combining approach offers broadband operation with low-power and low-area advantages and is a promising candidate for low-power frequency synthesis in deep submicrometer CMOS technologies. Chip prototype of the proposed frequency multiplication-based 2.4-GHz binary frequency-shift-keying (BFSK)/amplitude shift keying (ASK) transmitter (TX) was fabricated in 0.13-mu m CMOS technology. The TX achieves maximum data rates of 3 and 20 Mb/s for BFSK and ASK modulations, respectively, consuming a 14-mA current from 1.3 V supply voltage. The corresponding energy efficiencies of the TX are 3.6 nJ/bit for BFSK and 0.91 nJ/bit for ASK modulations.

All Digital Energy Sensing for Minimum Energy Tracking

Minimizing energy consumption is of utmost importance in an energy starved system with relaxed performance requirements. This brief presents a digital energy sensing method that requires neither a constant voltage reference nor a time reference. An energy minimizing loop uses this to find the minimum energy point and sets the supply voltage between 0.2 and 0.5 V. Energy savings up to 1275% over existing minimum energy tracking techniques in the literature is achieved.

Automated cell viability assessment using a microfluidics based portable imaging flow analyzer

In this work, we report a system-level integration of portable microscopy and microfluidics for the realization of optofluidic imaging flow analyzer with a throughput of 450 cells/s. With the use of a cellphone augmented with off-the-shelf optical components and custom designed microfluidics, we demonstrate a portable optofluidic imaging flow analyzer. A multiple microfluidic channel geometry was employed to demonstrate the enhancement of throughput in the context of low frame-rate imaging systems. Using the cell-phone based digital imaging flow analyzer, we have imaged yeast cells present in a suspension. By digitally processing the recorded videos of the flow stream on the cellphone, we demonstrated an automated cell viability assessment of the yeast cell population. In addition, we also demonstrate the suitability of the system for blood cell counting. (C) 2015 AIP Publishing LLC.

Estimation of Aboveground Phytomass of Plantations Using Digital Photogrammetry and High Resolution Remote Sensing Data

The study follows an approach to estimate phytomass using recent techniques of remote sensing and digital photogrammetry. It involved tree inventory of forest plantations in Bhakra forest range of Nainital district. Panchromatic stereo dataset of Cartosat-1 was evaluated for mean stand height retrieval. Texture analysis and tree-tops detection analyses were done on Quick-Bird PAN data. The composite texture image of mean, variance and contrast with a 5x5 pixel window was found best to separate tree crowns for assessment of crown areas. Tree tops count obtained by local maxima filtering was found to be 83.4 % efficient with an RMSE+/-13 for 35 sample plots. The predicted phytomass ranged from 27.01 to 35.08 t/ha in the case of Eucalyptus sp. while in the case of Tectona grandis from 26.52 to 156 t/ha. The correlation between observed and predicted phytomass in Eucalyptus sp. was 0.468 with an RMSE of 5.12. However, the phytomass predicted in Tectona grandis was fairly strong with R-2=0.65 and RMSE of 9.89 as there was no undergrowth and the crowns were clearly visible. Results of the study show the potential of Cartosat-1 derived DSM and Quick-Bird texture image for the estimation of stand height, stem diameter, tree count and phytomass of important timber species.