Shock tunnel measurements of surface pressures in shock induced separated flow field using MEMS sensor array

Characterized not just by high Mach numbers, but also high flow total enthalpies-often accompanied by dissociation and ionization of flowing gas itself-the experimental simulation of hypersonic flows requires impulse facilities like shock tunnels. However, shock tunnel simulation imposes challenges and restrictions on the flow diagnostics, not just because of the possible extreme flow conditions, but also the short run times-typically around 1 ms. The development, calibration and application of fast response MEMS sensors for surface pressure measurements in IISc hypersonic shock tunnel HST-2, with a typical test time of 600 mu s, for the complex flow field of strong (impinging) shock boundary layer interaction with separation close to the leading edge, is delineated in this paper. For Mach numbers 5.96 (total enthalpy 1.3 MJ kg(-1)) and 8.67 (total enthalpy 1.6 MJ kg(-1)), surface pressures ranging from around 200 Pa to 50 000 Pa, in various regions of the flow field, are measured using the MEMS sensors. The measurements are found to compare well with the measurements using commercial sensors. It was possible to resolve important regions of the flow field involving significant spatial gradients of pressure, with a resolution of 5 data points within 12 mm in each MEMS array, which cannot be achieved with the other commercial sensors. In particular, MEMS sensors enabled the measurement of separation pressure (at Mach 8.67) near the leading edge and the sharply varying pressure in the reattachment zone.

Ancilla-assisted measurements on quantum ensembles: general protocols and applications in NMR quantum information processing

Quantum ensembles form easily accessible architectures for studying various phenomena in quantum physics, quantum information science and spectroscopy. Here we review some recent protocols for measurements in quantum ensembles by utilizing ancillary systems. We also illustrate these protocols experimentally via nuclear magnetic resonance techniques. In particular, we shall review noninvasive measurements, extracting expectation values of various operators, characterizations of quantum states and quantum processes, and finally quantum noise engineering.

An evolutionary formalism for weak quantum measurements

Unitary evolution and projective measurement are fundamental axioms of quantum mechanics. Even though projective measurement yields one of the eigenstates of the measured operator as the outcome, there is no theory that predicts which eigenstate will be observed in which experimental run. There exists only an ensemble description, which predicts probabilities of various outcomes over many experimental runs. We propose a dynamical evolution equation for the projective collapse of the quantum state in individual experimental runs, which is consistent with the well-established framework of quantum mechanics. In case of gradual weak measurements, its predictions for ensemble evolution are different from those of the Born rule. It is an open question whether or not suitably designed experiments can observe this alternate evolution.

A Study of Pressure-Dependent Squeeze Film Stiffness as a Resonance Modulator Using Static and Dynamic Measurements

We report on the resonant frequency modulation of inertial microelectromechanical systems (MEMS) structures due to squeeze film stiffness over a range of working pressures. Squeeze film effects have been studied extensively, but mostly in the context of damping and Q-factor determination of dynamic MEMS structures, typically suspended over a fixed substrate with a very thin air gap. Here, we show with experimental measurements and analytical calculations how the pressure-dependent air springs (squeeze film stiffness) change the resonant frequency of an inertial MEMS structure by as much as five times. For capturing the isolated effect of the squeeze film stiffness, we first determine the static stiffness of our structure with atomic force microscope probing and then study the effect of the air spring by measuring the dynamic response of the structure, thus finding the resonant frequencies while varying the air pressure from 1 to 905 mbar. We also verify our results by analytical and Finite Element Method calculations. Our findings show that the pressure-dependent squeeze film stiffness can affect a rather huge range of frequency modulation (>400%) and, therefore, can be used as a design parameter for exploiting this effect in MEMS devices. 2014-0310]

Real-Time Stress Measurements in Germanium Thin Film Electrodes during Electrochemical Lithiation/Delithiation Cycling

An in situ study of stress evolution and mechanical behavior of germanium as a lithium-ion battery electrode material is presented. Thin films of germanium are cycled in a half-cell configuration with lithium metal foil as counter/reference electrode, with 1M LiPF6 in ethylene carbonate, diethyl carbonate, dimethyl carbonate solution (1:1:1, wt%) as electrolyte. Real-time stress evolution in the germanium thin-film electrodes during electrochemical lithiation/delithiation is measured by monitoring the substrate curvature using the multi-beam optical sensing method. Upon lithiation a-Ge undergoes extensive plastic deformation, with a peak compressive stress reaching as high as -0.76 +/- 0.05 GPa (mean +/- standard deviation). The compressive stress decreases with lithium concentration reaching a value of approximately -0.3 GPa at the end of lithiation. Upon delithiation the stress quickly became tensile and follows a trend that mirrors the behavior on compressive side; the average peak tensile stress of the lithiated Ge samples was approximately 0.83 GPa. The peak tensile stress data along with the SEM analysis was used to estimate a lower bound fracture resistance of lithiated Ge, which is approximately 5.3 J/m(2). It was also observed that the lithiated Ge is rate sensitive, i.e., stress depends on how fast or slow the charging is carried out. (C) The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. All rights reserved.

Probing 2D black phosphorus by quantum capacitance measurements

Two-dimensional materials and their heterostructures have emerged as a new class of materials, not only for fundamental physics but also for electronic and optoelectronic applications. Black phosphorus (BP) is a relatively new addition to this class of materials. Its strong in-plane anisotropy makes BP a unique material for making conceptually new types of electronic devices. However, the global density of states (DOS) of BP in device geometry has not been measured experimentally. Here, we report the quantum capacitance measurements together with the conductance measurements on an hBN-protected few-layer BP (similar to six layers) in a dual-gated field effect transistor (FET) geometry. The measured DOS from our quantum capacitance is compared with density functional theory (DFT). Our results reveal that the transport gap for quantum capacitance is smaller than that in conductance measurements due to the presence of localized states near the band edge. The presence of localized states is confirmed by the variable range hopping seen in our temperature dependence conductivity. A large asymmetry is observed between the electron and hole side. This asymmetric nature is attributed to the anisotropic band dispersion of BP. Our measurements establish the uniqueness of quantum capacitance in probing the localized states near the band edge, hitherto not seen in conductance measurements.

Fiber Bragg Grating Sensor Package for Submicron Level Displacement Measurements

In this article, the design and development of a Fiber Bragg Grating (FBG) based displacement sensor package for submicron level displacement measurements are presented. A linear shift of 12.12 nm in Bragg wavelength of the FBG sensor is obtained for a displacement of 6 mm with a calibration factor of 0.495 mu m/pm. Field trials have also been conducted by comparing the FBG displacement sensor package against a conventional dial gauge, on a five block masonry prism specimen loaded using three-point bending technique. The responses from both the sensors are in good agreement, up to the failure of the masonry prism. Furthermore, from the real-time displacement data recorded using FBG, it is possible to detect the time at which early creaks generated inside the body of the specimen which then prorogate to the surface to develop visible surface cracks; the respective load from the load cell can be obtained from the inflection (stress release point) in the displacement curve. Thus the developed FBG displacement sensor package can be used to detect failures in structures much earlier and to provide an adequate time to exercise necessary action, thereby avoiding the possible disaster.

In-situ flexural OPV measurements on flexible glass substrate

In-situ dark and light IV characteristics of inverted P3HT-PCBM devices on flexible glass substrates were measured while bending. Bending set up was simple and home built with servo controlled 2 parallel plate movements. ITO was sputter coated onto the thin flexible glass sheets of 25mmx25mm size in the lab. OPV devices were fabricated inside the glove box and conversion efficiency measured was about 2.8%. Bending of the device substrates and simultaneous PV measurements were carried out in ambient conditions. It was observed that the J(SC) and efficiency increased until the substrate breaking point but the V-OC and fill factor remained unchanged.