Single Events in a COTS Soft-Error Free SRAM at Low Bias Voltage Induced by 15-MeV Neutrons

This paper presents an experimental study of the sensitivity to 15-MeV neutrons of Advanced Low Power SRAMs (A-LPSRAM) at low bias voltage little above the threshold value that allows the retention of data. This family of memories is characterized by a 3D structure to minimize the area penalty and to cope with latchups, as well as by the presence of integrated capacitors to hinder the occurrence of single event upsets. In low voltage static tests, classical single event upsets were a minor source of errors, but other unexpected phenomena such as clusters of bitflips and hard errors turned out to be the origin of hundreds of bitflips. Besides, errors were not observed in dynamic tests at nominal voltage. This behavior is clearly different than that of standard bulk CMOS SRAMs, where thousands of errors have been reported.

Comparison of available measurements of the absolute air-fluorescence yield and determination of its global average value

Experimental results of the absolute air-fluorescence yield are given very often in different units (photons/MeV or photons/m) and for different wavelength intervals. In this work we present a comparison of available results normalized to its value in photons/MeV for the 337 nm band at 1013 hPa and 293 K. The conversion of photons/m to photons/MeV requires an accurate determination of the energy deposited by the electrons in the field of view of the experimental set-up. We have calculated the energy deposition for each experiment by means of a detailed Monte Carlo simulation and the results have been compared with those assumed or calculated by the authors. As a result, corrections to the reported fluorescence yields are proposed. These corrections improve the compatibility between measurements in such a way that a reliable average value with uncertainty at the level of 5% is obtained.