High sensitivity beam phase measurement system for isochronous cyclotron

The beam phase measurement system in the HIRFL is introduced. Based on the double-balanced mixer principle using rf-signal mixing and filtering techniques, a stable and sensitive phase measurement system has been developed. The phase history of the ion beam is detected by using a set of capacitive pick-up probes installed in the cyclotron. The phase information of the measurement is necessary for tuning to obtain a optimized isochronous magnetic field which induces to maximize the beam intensity and to optimize the beam quality. The result of the phase measurement is reliable and the accurancy reaches +/- 0.5 degrees.

Dynamic Measurement System for Dipoles of RCS for CS

A dynamic measurement system was developed by the Institute of Modern Physics (IMP) for the dipole prototype of Rapid Cycle Synchrotron (RCS) of China Spallation Neutron Source (CSNS). The repetition frequency of RCS is 25 Hz. The probe is a moving arc searching-coil, and the data acquisition system is based on the dynamic analysis modular of National Instrument. To get the error of high order harmonics of the field at basic frequency, the hardware integrator is replaced by a high speed ADC with software filter and integrator. A series of harmonic coefficients of field are used to express the varieties of dynamic fields in space and time simultaneously. The measurement system has been tested in Institute of High Energy Physics (IHEP), and the property of the dipole prototype of RCS has been measured. Some measurement results and the repeatability of system are illustrated in this paper.

Fourier series expansion method for gain measurement from amplified spontaneous emission spectra of Fabry-Perot semiconductor lasers

A gain measurement technique, based on Fourier series expansion of periodically extended single fringe of the amplified spontaneous emission spectrum, is proposed for Fabry-Perot semiconductor lasers. The underestimation of gain due to the limited resolution of the measurement system is corrected by a factor related to the system response function. The standard deviations of the gain-reflectivity product under low noise conditions are analyzed for the Fourier series expansion method and compared with those of the Hakki-Paoli method and Cassidy's method. The results show that the Fourier series expansion method is the least sensitive to noise among the three methods. The experiment results obtained by the three methods are also presented and compared.

High-speed photodetector characterization using tunable laser by optical heterodyne technique - art. no. 60200A

An ultra-wide-band frequency response measurement system for optoelectronic devices has been established using the optical heterodyne method utilizing a tunable laser and a wavelenath-fixed distributed feedback laser. By controlling the laser diode cavity length, the beat frequency is swept from DC to hundreds GHz. An outstanding advantage is that this measurement system does not need any high-speed light modulation source and additional calibration. In this measurement, two types of different O/E receivers have been tested. and 3 dB bandwidths measured by this system were 14.4GHz and 40GHz, respectively. The comparisons between experimental data and that from manufacturer show that this method is accurate and easy to carry out.

Measurement of 3db Bandwidth of Laser Diode Chips

An accurate technique for measuring the frequency response of semiconductor laser diode chips is proposed and experimentally demonstrated. The effects of test jig parasites can be completely removed in the measurement by a new calibration method. In theory, the measuring range of the measurement system is only determined by the measuring range of the instruments network analyzer and photo detector. Diodes' bandwidth of 7.5GHz and 10GHz is measured. The results reveal that the method is feasible and comparing with other method, it is more precise andeasier to use.

Effect of FePc structure on the activity in the oxidation of cyclohexene catalyzed by pd (OAc)(2)/HQ/FePc

In an acidic aqueous solution of acetonitrile, the catalytic activity of the catalysts consisted of Pd(OAc)(2)/hydroquinone(HQ) with iron phthalocyanine (FePc) from various sources was obviously different in the oxidation of cyclohexene to cyclohexanone, The analysis of the FePc using IR spectroscopy, Mossbauer spectroscopy, X-ray photoelectron spectroscopy (XPS), X-ray powder diffraction (XRD), scanning electron microscopy(SEM) and BET surface area measurement indicated that the catalytic activity of the multicomponent catalytic system composed of iron phthalocyanines depends on the amount of mu -oxo FePc, the crystallinity and the surface structure of iron phthalocyanine.

基于Stewart平台六维力传感器的分区静态标定方法

基于Stewart平台的六维力传感器具有结构紧凑、刚度大、量程宽等特点,它在工业机器人、空间站对接等领域具有广泛的应用前景。好的标定方法是正确使用传感器的基础。由于基于Stewart平台的六维力传感器是一个复杂的非线性系统,所以采用常规的线性标定方法必将带来较大的标定误差从而影响其使用性能。标定的实质是,由测量值空间到理论值空间的映射函数的确定过程。由函数逼近理论可知,当只在已知点集上给出函数值时,可用多项式或分段多项式等较简单函数逼近待定函数。基于上述思想,本文将整个测量空间划分为若干连续的子测量空间,再对每个子空间进行线性标定,从而提高了整个测量系统的标定精度。实验分析结果表明了该标定方法有效。

光栅位移测量系统的误差自修正方法研究

文中介绍的误差自修正方法是通过光栅位移测量系统中单片机对光栅传感器的多个零位信号进行计数,并根据测量值和系统设定值得到的误差函数自动进行误差修正。实验结果表明,该方法对光栅位移测量系统的误差既可自动进行有效的修正,又可提高系统的测量精度。

Stability of GaAs photocathodes under different intensities of illumination

The photocurrent curves of reflection-mode GaAs photocathodes as a function of time, when were illuminated by white light with an intensity of 0, 33 and 100 Ix, respectively, were measured using a multi-information measurement system. The calculated lifetimes of cathodes are 320, 160 and 75 min, respectively, showing that the stability of cathodes degraded with the increase of light intensity. The lifetime of cathode, illuminated by white light with an intensity of 100 Ix, while no photocurrent was being drawn during the illumination, was 100 min. Through comparison, we found that the influence of illumination on cathodes stability is greater than that of photocurrent. The quantum-yield curves of cathodes as a functions of time, when illuminated by white light with an intensity of 33 Ix, were measured also. The measured results show that the shape of the yield curves changes with increasing illumination time due to the faster quantum-yield degradation rate of low energy photons. Based on the revised quantum-efficiency equations for the reflection-mode cathodes, the variation of yield curves are analyzed to be due to the intervalley diffusion of photoelectrons and the evolution of the surface potential barrier profile of the photocathodes during degradation process.

The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity

A new structure of GaAs photocathode was introduced. The Be-doping concentration is variable in the new structure compared with the constant concentration of Be in the normal photocathode. Negative electron affinity GaAs photocathodes were fabricated by alternate input of Cs and O. The spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathodes with the new structure is enhanced by at least 50% as compared to those with the monolayer structure. Accordingly, two main factors leading to the enhanced photosensitivity of the photocathodes were discussed. (c) 2005 Elsevier B.V. All rights reserved.

Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN

The influence of growth pressure of GaN buffer layer on the properties of MOCVD GaN on alpha-Al2O3 has been investigated with the aid of a home-made in situ laser reflectometry measurement system. The results obtained with in situ measurements and scanning electron microscope show that with the increase in deposition pressure of buffer layer, the nuclei increase in size, which roughens the surface, and delays the coalescence of GaN nuclei. The optical and crystalline quality of GaN epilayer was improved when buffer layer was deposited at high pressure.