A Low Power Baseband Chain for CMMB Application

This paper presents experimental results of an analog baseband circuit for China Multimedia Mobile Broadcasting (CMMB) direct conversion receiver in 0.35um SiGe BiCMOS process. It is the first baseband of CMMB RFIC reported so far. A 8(th)-order chebyshev low pass filter (LPF) with calibration system is used in the analog baseband circuit, the filter provides 0.5 dB passband ripple and -35 dB attenuation at 6MHz with the cutoff frequency at 4MHz, the calibration of filter is reported to achieve the bandwidth accuracy of 3%. The baseband variable gain amplifier (VGA) achieves more than 40 dB gain tuning with temperature compensation. In addition, A DC offset cancellation circuit is also introduced to remove the offset from layout and self-mixing, and the remaining offset voltage and current consumption are only 6mV and 412uA respectively. Implemented in a 0.35um SiGe technology with 1.1 mm(2) die size, this tuner baseband achieves OIP3 of 25.5 dBm and dissipate 16.4 mA under 2.8-V supply.

沃特和PAM施用方式对土壤水分及玉米生长的影响

为了鉴别沃特保水剂和PAM不同施用方式的施用效果,在陕北黄土丘陵沟壑区开展了撒施、沟施、穴施对土壤水含量和玉米生长影响的田间试验。结果表明不同施用方式提高了0～10cm土层土壤水含量,而30～40cm土层土壤水含量则随降水量的多少呈现出不同的规律性。随着玉米的生长,不同施用方式影响的土层深度逐渐加深,从三叶期0～50cm土层增加到成熟期的0～200cm土层,土壤水含量表现为沟施、穴施高于撒施,撒施高于对照。3种施用方式对玉米出苗无显著影响,但均提高了玉米生物量、籽粒产量、水分利用效率,降低了玉米的耗水量,其中沟施、穴施的效果强于撒施。沃特、PAM相同施用方式对土壤水含量和玉米生长无显著影响,且沟施和穴施之间无显著性差异,但沃特单位施用量单位面积的增产量高于PAM。玉米生产中,沃特、PAM应以沟施或穴施为主。

A low power high linearity baseband for a direct conversation CMMB tuner

An analog baseband circuit made in a 0.35-μm SiGe BiCMOS process is presented for China Multimedia Mobile Broadcasting (CMMB) direct conversion receivers. A high linearity 8th-order Chebyshev low pass filter (LPF) with accurate calibration system is used. Measurement results show that the filter provides 0.5-dB pass-band ripple, 4% bandwidth accuracy, and -35-dB attenuation at 6 MHz with a cutoff frequency of 4 MHz. The current steering type variable gain amplifier (VGA) achieves more than 40-dB gain range with excellent temperature compensation.This tuner baseband achieves an OIP3 of 25.5 dBm, dissipates 16.4 mA under a 2.8-V supply and occupies 1.1 mm~2 of die size.