Spatial temperature gradient capillary electrophoresis for DNA mutation detection

A continuous spatial temperature gradient was established in capillary electrophoresis by using a simple temperature control device. The temperature profile along the capillary was predicted by theoretical calculations. A nearly linear spatial temperature gradient was established and applied to DNA mutation detection. By spanning a wide temperature range, it was possible to perform simultaneous heteroduplex analysis for various mutation types that have different melting temperatures.

Subcooled pool boiling on thin wire in microgravity

A new set of experimental data of subcooled pool boiling on a thin wire in rnicrogravity aboard the 22nd Chinese recoverable satellite is reported in the present paper. The temperature-control led heating method is used. The results of the experiments in normal gravity before and after the flight experiment are also presented, and compared with those in microgravity. The working fluid is degassed R113 at 0.1 MPa and subcooled by 26 degrees C nominally. A thin platinum wire of 60 mu m in diameter and 30 mm in length is simultaneously used as heater and thermometer. It is found that the heat transfer of nucleate pool boiling is slightly enhanced in microgravity comparing with those in normal gravity. It is also found that the correlation of Lienhard and Dhir can predict the CHF with good agreement, although the range of the dimensionless radius is extended by three or more decades above the originally set limit. Three critical bubble diameters are observed in microgravity, which divide the observed vapor bubbles into four regimes with different sizes. Considering the Marangoni effect, a qualitative model is proposed to reveal the mechanism underlying the bubble departure processes, and a quantitative agreement can also be acquired.

梯度补偿法控温晶体的高功率绿光激光器

研究了平均功率超过30 W的稳定高效全固态绿光激光器,分析得出影响全固态腔内倍频激光器倍频效率和输出稳定性的主要因素是倍频晶体局部温升造成的相位失配和热透镜效应,采用温度梯度补偿控温法对大尺寸倍频晶体进行温度控制,降低激光器工作中倍频晶体内外温度梯度从而有效地克服因晶体局部温升造成的倍频相位匹配角失配和热透镜效应。采用三条60 W的半导体激光二极管阵列板条侧面抽运Nd:YAG激光增益介质棒,采用声光调Q,平凹直腔和腔内倍频结构配合温度梯度补偿控温法对大尺寸倍频晶体进行温度控制,得到了稳定高效的532 nm

光谱稳定性对直接探测多普勒测风激光雷达的影响研究

The wind error of the double-edge technique Doppler lidar due to the instability of injection-seeding solid laser and the drift of interferometer s spectrum was analyzed. Corresponding numerical simulation indicated that if the wind error of 1 m/s was achieved, the unsuccessful injection-seeding pulses should be less than 0.06% in integration time of 5 min. (30000 pulses). In the respect of spectrum drift of the interferometer, double temperature control systems were used and the accuracy of minus or plus 0.002°C was obtained, corresponding to the wind error of minus or plus 0.226 m/s. Monitoring of buildup time of the injection-seeding laser and temperature of the interferometer was significantly to improve the invertion accuracy of wind error by rejecting the data with frequency jumping and drifting. Researches of injection-seeding and spectrum stability of the interferometer were practical for the development of double-edge wind lidar.}

百合鳞茎低温贮藏及热胁迫下新铁炮百合的光合特性

百合是重要的球根花卉，是世界五大切花之一。我国的百合野生资源丰富，但百合鲜切花生产与世界花卉大国相比仍然存在差距，优质的商品种球大量依靠进口，实现商品种球国产化能够促进百合鲜切花生产和农业经济发展。温度是影响百合生长发育最重要的因子之一，影响百合鳞茎发育，限制百合的分布区域。 百合鳞茎具有自然休眠的特性，低温处理是目前打破百合鳞茎休眠的最常用的方法。低温处理期间，鳞茎内发生复杂的反应，淀粉水解，鳞茎内的淀粉酶（α-淀粉酶和β-淀粉酶）活性增加，可溶性糖主要是蔗糖积累;可溶性蛋白质含量增加，游离氨基酸在鳞茎相对幼嫩的器官中集中;休眠解除期间脱落酸和玉米素核苷含量呈下降趋势，赤霉素含量呈上升趋势且活性增高，鳞茎各部位生长素都有上升，一些其他生长调节剂如Me-JA和多胺对解除百合鳞茎也有作用。低温处理期间，鳞茎内各种激素相互作用，共同调控鳞茎的休眠状态。利用低温处理打破百合鳞茎休眠的过程中，温度要求控制在稳定的范围内。利用冰箱低温处理打破百合鳞茎休眠的实验中，放入样品前冰箱内的温度在所设定温度±1℃范围内波动，且不同部位温度均匀;但冰箱内放入样品后，其内部不同部位的温度相差较大，表现为上部温度高，下部温度低，冰箱内部不同部位温度差异很大。 从百合资源在中国的分布看，华北地区的百合资源相对稀缺，温度是限制其生长的重要环境因子。新铁炮百合能够在炎热的华南地区露地栽培，将其在华北地区进行区域化露地栽培实验，对百合栽培应用推广，扩大栽培面积，降低运输成本，以及保证鲜切花质量有重要意义。通过气体交换测定的光合作用是对高温最敏感和综合的生理指标，可以在植物生长和生物量积累未发生明显变化之前揭示高温的影响。本研究通过人工气候箱，设定四个温度梯度：25℃，32℃，38℃，44℃，处理2h，通过测定新铁炮百合幼苗的光合特性研究其耐热程度、探讨可能的耐热机制。结果表明：净光合作用速率（Pn）在小于38℃时下降幅度不大，大于38℃后显著下降，随着处理温度的提高，气孔导度（Gs）呈下降的趋势，胞间二氧化碳浓度（Ci）则上升，而气孔限制值（Ls）下降。高温下，两品种叶片最小荧光（Fo）无明显变化，最大荧光（Fm）和光系统II（PSⅡ）最大光化学效率（Fv/Fm）下降程度较小;光下，PSⅡ实际光化学效率（ΦPSⅡ）呈下降趋势，44℃处理后显著下降;NPQ随处理温度的提高而上升;处理温度升高，SOD、APX、CAT、POD活力增强。研究表明新铁炮百合能够耐受32-38℃的高温;热胁迫下，叶片通过提高非光化猝灭和抗氧化酶活性两种机制来抵御高温胁迫。

Very low-pressure VLP-CVD growth of high quality gamma-Al2O3 films on silicon by multi-step process

gamma-Al2O3 films were grown on Si (10 0) substrates using the sources of TMA (AI(CH3)(3)) and O-2 by very low-pressure chemical vapor deposition. The effects of temperature control on the crystalline quality, surface morphology, uniformity and dielectricity were investigated. It has been found that the,gamma-Al2O3 film prepared at a temperature of 1000degreesC has a good crystalline quality, but the surface morphology, uniformity and dielectricity were poor due to the etching reaction between 0, and Si substrate in the initial growth stage. However, under a temperature-varied multi-step process the properties Of gamma-Al2O3 film were improved. The films have a mirror-like surface and the dielectricity was superior to that grown under a single-step process. The uniformity of gamma-Al2O3 films for 2-in epi-wafer was <5%, it is better than that disclosed elsewhere. In order to improve the crystalline quality, the gamma-Al2O3 films were annealed for I h in O-2 atmosphere. (C) 2002 Elsevier Science B.V. All rights reserved.

Single steady frequency and narrow line width external cavity semiconductor laser

A single longitudinal mode and narrow line width external cavity semiconductor laser is proposed. It is constructed with a semiconductor laser, collimator, a flame grating, and current and temperature control systems. The one facet of semiconductor laser is covered by high transmission film, and another is covered by high reflection film. The flame grating is used as light feedback element to select the mode of the semiconductor laser. The temperature of the constructed external cavity semiconductor laser is stabilized in order of 10(-3)degreesC by temperature control system. The experiments have been carried out and the results obtained-the spectral fine width of this laser is compressed to be less than 1.4MHz from its original line-width of more than 1200GHz and the output stability (including power and mode) is remarkably enhanced.

基于MSP430F149的智能温度控制系统

随着计算机技术、测量技术以及控制技术的高速发展，越来越多的先进设备、技术和方法应用于控制领域中。在这其中，单片微处理器因其性能的日益提高、价格的不断降低、强有力的性价优势而逐渐凸现其重要的核心地位。而基于它的温度控制器对于大型工业工程和日常生活等领域的应用前景也日趋广阔。本智能温控系统将应用于国家大科学工程HIRFL-CSR中，它以新型低功耗单片机MSP430F149作为核心，并配有键盘和数码管显示组成小型操作系统，可实现数据采集、数据显示、键盘输入和自动控制等功能。本系统可以进行现场监控，也可以通过RS-485与上位机的串行通信，使这套系统可以在上位机上设定控制温度和各个控制参数，实现远程对温度的实时监控。相对传统的温度控制器而言，本设计采用了铂电阻温度测量电路，并通过硬件和软件两方面对采集模块进行优化处理以便提高系统精度。最终实现了在O℃～500℃温控范围内采集精度在士1℃范围内。使得整个系统具有精度高、可靠性较好、电路简单、成本低、体积小、生产调试方便等特点。本文从硬件和软件两个方面详细介绍了构成本系统的各个模块的硬件电路设计·实现功能和软件编程思想，并丛温控系统的硬件和软件方面介绍了一些工程上实用的抗干扰措施。

聚四氟乙烯烧结过程微机模糊群控系统

本文研究了用于聚四氟乙烯烧结过程实时控制的模糊群控微机系统的硬件及软件设计。系统的主要优点是低成本,高可靠性,其恒温区控温精度达±1.5℃。

多路温度测控系统的设计

目的利用单片机技术设计多路温度测控系统,实现多路温度的测量和控制.方法系统以单片机AT89C52为核心,利用多路转换器和新型数字器件MAX6675构成8路K型热电偶温度测量电路,利用D/A转换器AD7528和驱动电路构成输出电路,实现8路一一对应的闭环温度测量控制.系统软件采用PID控制器.结果实践证明,可根据需要增减系统温度信号采样通道的数目,使用软件抗干扰措施,提高了采样数据的可靠性.简化了输入输出硬件结构,使系统具有低成本高速度和较好的测量控制精度.结论多路温度测控系统作为整机适用于现场测量控制应用,也可作为多路温度控制模块应用在体积小、温度测量精度要求较高的大型系统中.

Filamentation control in the temperature gradient argon gas

A novel technique of controlling the evolution of the filamentation was experimentally demonstrated in an argon gas-filled tube. The entrance of the filament was heated by a furnace and the other end was cooled with air, which resulted in the temperature gradient distribution along the tube. The experimental results show that multiple filaments are merged into a single filament and then no filament by only increasing the temperature at the entrance of the filament. Also, the filament can appear and disappear after increasing the local temperature and input pulse energy in turn. This technique offers another degree of freedom to control the filamentation and opens a new way for multi-mJ level monocycle pulse generation through filamentation in the noble gas.

Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition

The effects of In doped low-temperature (LT) AlGaN interlayer on the properties of GaN/Si(111) by MOCVD have been investigated. Using In doping LT-interlayer can decrease the stress sufficiently for avoiding crack formation in a thick (2.0 mu m) GaN layer. Significant improvement in the crystal and optical properties of GaN layer is also achieved. In doping is observed to reduce the stress in AlGaN interlayer measured by high-resolution X-ray diffraction (HRXRD). It can provide more compressive stress to counteract tensile stress and reduce crack density in subsequent GaN layer. Moreover, as a surfactant, indium is observed to cause an enhanced PL intensity and the narrowed linewidths of PL and XRD spectra for the LT-interlayer. Additionally, the crystal quality of GaN layer is found to be dependent on the growth parameters of underneath In-doped LT-AlGaN interlayer. The optimal parameters, such as TMIn flow rate, TMAl flow rates and thickness, are achieved to obtain nearly 2.0 mu m thick crack free GaN film with advanced optical and crystal properties. (c) 2005 Elsevier B.V. All rights reserved.

Control of Large-size SiC Growth Process Using Modeling tool

Large size bulk silicon carbide (SiC) crystals are commonly grown by the physical vapor transport (PVT) method. The PVT growth of SiC crystals involves sublimation and condensation, chemical reactions, stoichiometry, mass transport, induced thermal stress, as well as defect and micropipes generation and propagation. The quality and polytype of as-grown SiC crystals are related to the temperature distribution inside the growth chamber during the growth process, it is critical to predict the temperature distribution from the measured temperatures outside the crucible by pyrometers. A radio-frequency induction-heating furnace was used for the growth of large-size SiC crystals by the PVT method in the present study. Modeling and simulation have been used to develop the SiC growth process and to improve the SiC crystal quality. Parameters such as the temperature measured at the top of crucible, temperature measured at the bottom of the crucible, and inert gas pressure are used to control the SiC growth process. By measuring the temperatures at the top and bottom of the crucible, the temperatures inside the crucible were predicted with the help of modeling tool. SiC crystals of 6H polytype were obtained and characterized by the Raman scattering spectroscopy and SEM, and crystals of few millimeter size grown inside the crucible were found without micropipes. Expansion of the crystals were also performed with the help of modeling and simulation.

Temperature and composition profile during double-track laser cladding of H13 tool steel

Multi-track laser cladding is now applied commercially in a range of industries such as automotive, mining and aerospace due to its diversified potential for material processing. The knowledge of temperature, velocity and composition distribution history is essential for a better understanding of the process and subsequent microstructure evolution and properties. Numerical simulation not only helps to understand the complex physical phenomena and underlying principles involved in this process, but it can also be used in the process prediction and system control. The double-track coaxial laser cladding with H13 tool steel powder injection is simulated using a comprehensive three-dimensional model, based on the mass, momentum, energy conservation and solute transport equation. Some important physical phenomena, such as heat transfer, phase changes, mass addition and fluid flow, are taken into account in the calculation. The physical properties for a mixture of solid and liquid phase are defined by treating it as a continuum media. The velocity of the laser beam during the transition between two tracks is considered. The evolution of temperature and composition of different monitoring locations is simulated.