Solution-processable highly efficient yellow- and red-emitting phosphorescent organic light emitting devices from a small molecule bipolar host and iridium complexes

A bipolar transport compound, 2,5-bis(4-(9-(2-ethylhexyl)-9H-carbazol-3-yl) phenyl)-1,3,4-oxadiazole (CzOXD), incorporating both electron-and hole-transport functionalities, was synthesized and fully characterized by H-1 NMR, C-13 NMR, elemental analysis and mass spectrometry. Its thermal, electrochemical, electronic absorption and photoluminescent properties were studied

A simple route of morphology control and structural and optical properties of ZnO grown by metal-organic chemical vapour deposition

Employing the metal-organic chemical vapour deposition (MOCVD) technique, we prepare ZnO samples with different morphologies from the film to nanorods through conveniently changing the bubbled diethylzinc flux (BDF) and the carrier gas flux of oxygen (OCGF). The scanning electron microscope images indicate that small BDF and OCGF induce two-dimensional growth while the large ones avail quasi-one-dimensional growth. X-ray diffraction (XRD) and Raman scattering analyses show that all of the morphology-dependent ZnO samples are of high crystal quality with a c-axis orientation. From the precise shifts of the 2 theta. locations of ZnO (002) face in the XRD patterns and the E-2(high) locations in the Raman spectra, we deduce that the compressive stress forms in the ZnO samples and is strengthened with the increasing BDF and OCGF. Photoluminescence spectroscopy results show all the samples have a sharp ultraviolet luminescent band without any defects-related emission. Upon the experiments a possible growth mechanism is proposed.

Using different carrier gases to control AlN film stress and the effect on morphology, structural properties and optical properties

On the metalorganic chemical vapour deposition growth of AlN, by adjusting H-2+N-2 mixture gas components, we can gradually control island dimension. During the Volmer - Weber growth, the 2-dimensional coalescence of the islands induces an intrinsic tensile stress. Then, this process can control the in-plane stress: with the N-2 content increasing from 0 to 3 slm, the in-plane stress gradually changes from 1.5 GPa tensile stress to - 1.2GPa compressive stress. Especially, with the 0.5 slm N-2 + 2.5 slm H-2 mixture gas, the in-plane stress is only 0.1 GPa, which is close to the complete relaxation state. Under this condition, this sample has good crystal and optical qualities.

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.

Structural properties of SI-GaAs grown in space

The structural properties of Semi-insulating gallium arsenide (SI-GaAs) crystal grown with power-travelling technique in space have been studied by double-crystal x-ray diffractometry and chemical etching. The quality of the crystal was first evaluated by x-ray rocking-curve method. The full width at half maximum of x-ray rocking curve in space-grown SI-GaAs is 9.4+/-0.08 are seconds. The average density of dislocations revealed by molten KOH is 2.0 X 10(4) cm(-2), and the highest density is 3.1 X 10(4) cm(-2). The stoichiometry in the single crystal grown in space is improved as well. Unfortunately, the rear of the ingot grown in space is polycrystalline owing to being out of control of power. (C) 1999 COSPAR. Published by Elsevier Science Ltd.

Structural properties of SI-GaAs grown in space

The structural properties of Semi-insulating gallium arsenide (SI-GaAs) crystal grown with power-travelling technique in space have been studied by double-crystal x-ray diffractometry and chemical etching. The quality of the crystal was first evaluated by x-ray rocking-curve method. The full width at half maximum of x-ray rocking curve in space-grown SI-GaAs is 9.4+/-0.08 are seconds. The average density of dislocations revealed by molten KOH is 2.0 X 10(4) cm(-2), and the highest density is 3.1 X 10(4) cm(-2). The stoichiometry in the single crystal grown in space is improved as well. Unfortunately, the rear of the ingot grown in space is polycrystalline owing to being out of control of power. (C) 1999 COSPAR. Published by Elsevier Science Ltd.

The structural composite effect of Au-WO3-Al interconnecting electrode on performance of each unit in stacked OLEDs

In this article, we report the effects of the thickness of metal and oxide layers of the Al/WO3/Au interconnecting structure on the electrical and optical characteristics of the and bottom units of the two-unit stacked organic-light-emitting-devices (OLEDs). It is found that light emission performance of the upper unit is sensitive to the transmittance of semitransparent Al/WO3/Au structure, which can be improved by changing the thickness of each layer of the Al/WO3/Au structure. It is important to note that the introduction WO3 between Al and Au significantly enhances the current efficiency of both the upper and bottom units with respect to that of the corresponding Al/Au structure without WO3. In addition, the emission spectra of both the upper and bottom units are narrower than that of the control device due to microcavity effect. Our results indicate that the All WO3/Au interconnecting structure is a good candidate for fabricating independently controllable high efficiency stacked OLEDs.

Structural features of the L-argininamide-binding DNA aptamer studied with ESI-FTMS

The 24-mer DNA aptamer of Harada and Frankel ( Harada, K.; Frankel, A. D. EMBO J. 1995, 14, 5798-5811) that binds L-argininamide (L-Arm) was studied by electrospray ionization Fourier transform mass spectrometry (ESI-FTMS). This DNA folds into a stem and loop such that the loop is able to engulf L-Arm. As controls, two derivatives of the same base composition, one with the same stem but a scrambled loop and the other with no ability to form a secondary structure, were studied. The two DNAs that could fold into stem-loop structures showed a more negatively charged distribution of ions than the linear control. This tendency was preserved in the presence of ligand; complexes expected to have more secondary structure had ions with more negative charges. Distinct species corresponding to no, one, and two bound L-Arm molecules were observed for each DNA. The fractional peak intensities were fit to a straightforward binding model and binding constants were obtained. Thus, ESI-FTMS can provide both qualitative and quantitative data regarding the structure of DNA and its interactions with noncovalent ligands.

Natural bromophenols from the marine red alga Polysiphonia urceolata (Rhodomelaceae): Structural elucidation and DPPH radical-scavenging activity

Three new natural occurring bromophenols, 3-(3-bromo-4,5-dihydroxyphenyl)-2-(3,5-dibromo-4-hydroxyphenyl)propionic acid (1), (E)-4-(3-bromo-4,5-dihydroxyphenyl)-but-3-en-2-one (2), and (3,5-dibromo-4-hydroxyphenyl) acetic acid butyl ester (3), together with one known bromophenol, 1,2-bis(3-bromo-4,5-dihydroxyphenyl)ethane (4), were isolated and identified from the marine red alga Polysiphonia urceolata. The structures of these compounds were elucidated by extensive analysis of ID and 2D NMR and IR spectra and MS data. Each of the isolated compounds was evaluated for scavenging alpha,alpha-diphenyl-beta-picrylhydrazyl (DPPH) radical activity and all of them exhibited significant activity with IC50 values ranging from 9.67 to 21.90 mu M, compared to the positive control, a well-known antioxidant butylated hydroxytoluene (BHT), with IC50 83.84 mu M. (C) 2007 Elsevier Ltd. All rights reserved.