15 resultados para smart meter

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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对涡轮流量传感器进行了理论分析,给出了涡轮流量计仪表常数的计算方法,讨论了获得较大固有仪表常数K_0时涡轮传感器结构参数(如叶片数、涡轮半径、口径等)的优化组合问题,通过多相流动实验,总结出K_0与流动密度之间的实验关系,由此给出用涡轮流量计测量多相流的半理论半经验公式,并在油井多相流量测量中得到了实际应用,符合较好。

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The study presented here was carried out to obtain the actual solids flow rate by the combination of electrical resistance tomography and electromagnetic flow meter. A new in-situ measurement method based on measurements of the Electromagnetic Flow Meters (EFM) and Electrical Resistance Tomography (ERT) to study the flow rates of individual phases in a vertical flow was proposed. The study was based on laboratory experiments that were carried out with a 50 mm vertical flow rig for a number of sand concentrations and different mixture velocities. A range of sand slurries with median particle size from 212 mu m to 355 mu m was tested. The solid concentration by volume covered was 5% and 15%, and the corresponding density of 5% was 1078 kg/m(3) and of 15% was 1238 kg/m(3). The flow velocity was between 1.5 m/s and 3.0 m/s. A total of 6 experimental tests were conducted. The equivalent liquid model was adopted to validate in-situ volumetric solids fraction and calculate the slip velocity. The results show that the ERT technique can be used in conjunction with an electromagnetic flow meter as a way of measurement of slurry flow rate in a vertical pipe flow. However it should be emphasized that the EFM results must be treated with reservation when the flow pattern at the EFM mounting position is a non-homogenous flow. The flow rate obtained by the EFM should be corrected considering the slip velocity and the flow pattern.

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More and more piezoelectric materials and structures have been used for structure control in aviation and aerospace industry. More efficient and convenient computation method for large complex structure with piezoelectric actuation devices is required. A load simulation method of piezoelectric actuation is presented in this paper. By this method, the freedom degree of finite element simulation is significantly reduced, the difficulty in defining in-plane voltage for multi-layers piezoelectric composite is overcome and the transfer computation between material main direction and the element main direction is simplified. The concept of simulation load is comprehensible and suitable for engineers of structure strength in shape and vibration control, thereby is valuable for promoting the application of piezoelectric material and structures in practical aviation and aerospace fields.

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This paper proposes smart universal multiple-valued (MV) logic gates by transferring single electrons (SEs). The logic gates are based on MOSFET based SE turnstiles that can accurately transfer SEs with high speed at high temperature. The number of electrons transferred per cycle by the SE turnstile is a quantized function of its gate voltage, and this characteristic is fully exploited to compactly finish MV logic operations. First, we build arbitrary MV literal gates by using pairs of SE turnstiles. Then, we propose universal MV logic-to-value conversion gates and MV analog-digital conversion circuits. We propose a SPICE model to describe the behavior of the MOSFET based SE turnstile. We simulate the performances of the proposed gates. The MV logic gates have small number of transistors and low power dissipations.

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Hybrid integration of GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays are demonstrated flip-chip bonded directly onto 1 mu m silicon CMOS circuits. The GaAs/AlGaAs MQW devices are designed for 850 nm operation. Some devices are used as input light detectors and others serve as output light modulators. The measurement results under applied biases show good optoelectronic characteristics of elements in SEED arrays. Nearly the same reflection spectrum is obtained for the different devices at an array and the contrast ratio is more than 1.2:1 after flip-chip bonding and packaging. The transimpedance receiver-transmitter circuit can be operated at a frequency of 300 MHz.

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This paper proposes a smart frequency presetting technique for fast lock-in LC-PLL frequency synthesizer. The technique accurately presets the frequency of VCO with small initial frequency error and greatly reduces the lock-in time. It can automatically compensate preset frequency variation with process and temperature. A 2.4GHz synthesizer with 1MHz reference input was implemented in 0.35 mu m CMOS process. The chip core area is 0.4mm(2). Output frequency of VCO ranges from 2390 to 2600MHz. The measured results show that the typical lock-in time is 3 mu s. The phase noise is -112dBc/Hz at 600KHz offset from center frequency. The test chip consumes current of 22mA that includes the consumption of the I/O buffers.

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Password authentication has been adopted as one of the most commonly used solutions in network environment to protect resources from unauthorized access. Recently, Lee–Kim–Yoo [S.W. Lee, H.S. Kim, K.Y. Yoo, Improvement of Chien et al.'s remote user authentication scheme using smart cards, Computer Standards & Interfaces 27 (2) (2005) 181–183] and Lee-Chiu [N.Y. Lee, Y.C. Chiu, Improved remote authentication scheme with smart card, Computer Standards & Interfaces 27 (2) (2005) 177–180] respectively proposed a smart card based password authentication scheme. We show that these two schemes are both subject to forgery attacks provided that the information stored in the smart card is disclosed by the adversary. We also propose an improved scheme with formal security proof.

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于2010-11-23批量导入

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The investigations on GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays for optoelectronic smart pixels are reported. The hybrid integration of GaAs/AlGaAs multiple quantum well devices flip-chip bonding directly over 1 mu m silicon CMOS circuits are demonstrated. The GaAs/AlGaAs multiple quantum well devices are designed for 850nm operation. The measurement results under applied biases show the good optoelectronic characteristics of elements in SEED arrays. The 4x4 optoelectronic crossbar structure consisting of hybrid CMOS-SEED smart pixels have been designed, which could be potentially used in optical interconnects for multiple processors.

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Hybrid integration of GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays are demonstrated flip-chip bonded directly onto 1 mu m silicon CMOS circuits. The GaAs/AlGaAs MQW devices are designed for 850 nm operation. Some devices are used as input light detectors and others serve as output light modulators. The measurement results under applied biases show good optoelectronic characteristics of elements in SEED arrays. Nearly the same reflection spectrum is obtained for the different devices at an array and the contrast ratio is more than 1.2:1 after flip-chip bonding and packaging. The transimpedance receiver-transmitter circuit can be operated at a frequency of 300 MHz.

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A simple and rapid colorimetric pH meter has been developed based on the conformational switch of i-motif DNA and non-crosslinking AuNP aggregation, the average accuracy of the nano-meter was found to be +/- 0.04 pH unit across the physiological operating range.

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We have demonstrated a smart polymeric transducer and aptamer/intercalating dye system that allows the label-free detection of protein with high sensitivity and selectivity.

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A smart biodegradable cationic polymer (CBA-PEI) based on the disulfide bond-containing cross-linker cystamine bisacrylamide (CBA) and low molecular weight branched polyethylenimine (1800-Da, PEI1800) was successfully synthesized by Michael addition reaction in our recent study. Furthermore, a series of copolymers (CBA-PEI-PEG) with different PEGylation degree were obtained by the mPEG-SPA (5000-Da) reacting with CBA-PEI at various weight ratios directly. The molecular structures of the resulting polymers CBA-PEI and CBA-PEI-PEG were evaluated by nuclear magnetic resonance spectroscopy (H-1-NMR) and capillary viscosity measurements, all of which had successfully verified formation of the copolymers. The polymer/DNA complexes based on CBA-PEI and CBA-PEI-PEG were measured by dynamic light scattering and gel retardation assay. The results showed that the particle size and zeta potential of complexes were reduced with increasing amount of PEG grafting, even no particle formation. The particle size of CBA-PEI/DNA complexes was in range of 103.1 to 129.1 nm, and the zeta potential was in range of 14.2 to 24.3 mV above the 2:1 weight ratio. In the same measure condition, the particle size of CBA-PEI-PEG complexes was reduced to a range of 32.2 to 55 nm, and the zeta potential was in range of 9.3 to 13.8 mV at the 2:1 weight ratio.