High and stable conversion efficiency obtaining in single-stage multi-crystal optical parametric chirped pulse amplification system

An optical parametric chirped-pulse amplification system is demonstrated to provide 32.9% pump-to-signal conversion efficiency . Special techniques are used to make the signal and pump pulses match with each other in both spectral and temporal domains. The broadband 9.5-mJ pulses are produced at the repetition rate of 1 Hz with the gain of over 1.9 x 10(8). The output energy fluctuation of 7.8% is achieved for the saturated amplification process against the pump fluctuation of 10%.

A direct digital frequency synthesizer with single-stage delta-sigma interpolator and current-steering DAC

This paper presents a direct digital frequency synthesizer (DDFS) with a 16-bit accumulator, a 4th-order single-stage pipelined delta-sigma interpolator and a 300MS/s 12-bit current-steering DAC based on Q(2) Random Walk switching scheme. The delta-sigma interpolator is used to reduce the phase truncation error and the ROM size. The measured spurious-free dynamic range (SFDR) is greater than 80 dB for 8-bit phase value and 12-bit sine-amplitude output. The DDFS prototype is fabricated in a 0.35um CMOS technology with core area of 1.11mm(2).

Effects of thermal annealing on polymer photovoltaic cells with buffer layers and in situ formation of interfacial layer for enhancing power conversion efficiency

We have investigated the effects of thermal annealing before and after cathode deposition on poly(3-hexylthiophene)(P3HT)/[6,6]-phenyl C61-butyric acid methyl ester (PCBM) blend photovoltaic cells with different cathode buffer layers. The introduction of cathode buffer layer such as lithium fluoride (LiF) and calcium oxide (CaO) in pre-annealing cells can increase the open-circuit voltage (V-oc) and the power conversion efficiency (PCE). Post thermal annealing after cathode deposition further enhanced the PCE of the cells with LiF/Al cathode.

A direct digital frequency synthesizer with fourth-order phase domain Delta Sigma noise shaper and 12-bit current-steering DAC

This paper presents a direct digital frequency synthesizer (DDFS) with a 16-bit accumulator, a fourth-order phase domain single-stage Delta Sigma interpolator, and a 300-MS/s 12-bit current-steering DAC based on the Q(2) Random Walk switching scheme. The Delta Sigma interpolator is used to reduce the phase truncation error and the ROM size. The implemented fourth-order single-stage Delta Sigma noise shaper reduces the effective phase bits by four and reduces the ROM size by 16 times. The DDFS prototype is fabricated in a 0.35-mu m CMOS technology with active area of 1.11 mm(2) including a 12-bit DAC. The measured DDFS spurious-free dynamic range (SFDR) is greater than 78 dB using a reduced ROM with 8-bit phase, 12-bit amplitude resolution and a size of 0.09 mm(2). The total power consumption of the DDFS is 200)mW with a 3.3-V power supply.

An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser

A novel asymmetric broad waveguide diode laser structure was designed for high power conversion efficiency (PCE). The internal quantum efficiency, the series resistance, and the thermal resistance were theoretically optimized. The series resistance and the thermal resistance were greatly decreased by optimizing the thickness of the P-waveguide and the P-cladding layers. The internal quantum efficiency was increased by introducing a novel strain-compensated GaAs_0.9P_0.1/InGaAs quantum well. Experimentally, a single 1-cm bar with 20% fill factor and 900 μm cavity length was mounted P-side down on a microchannel-cooled heatsink, and a peak PCE of 60% is obtained at 26.3-W continuous wave output power.The results prove that this novel asymmetric waveguide structure design is an efficient approach to improve the PCE.

7.3 W国产单频光纤放大器

报道了一种MOPA式国产单频光纤放大器。该放大器采用连续波单频激光器作为主振荡器，采用我国自行设计和制造的大模场面积掺Yb双包层光纤作为功率放大器，在波长1064 nm处实现了最高7.3 W的连续激光输出，斜率效率为39%，光－光转换效率为26%。此外，对光谱特性及放大的自发发射的抑制也进行了探讨。

Technique for enhancing generation power density of silicon photovoltaic devices

A new type of photovoltaic system with higher generation power density has been studied in detail. The feature of the proposed system is a V-shaped structure with two polycrystalline solar cells. Compared to solar cells in a conventional approach, the V-shaped structure enhances external quantum efficiency and leads to an increase of 24% in power conversion efficiency.

Advances in high power semiconductor diode lasers - art. no. 682402

High power semiconductor lasers have broad applications in the fields of military and industry. Recent advances in high power semiconductor lasers are reviewed mainly in two aspects: improvements of diode lasers performance and optimization of packaging architectures of diode laser bars. Factors which determine the performance of diode lasers, such as power conversion efficiency, temperature of operation, reliability, wavelength stabilization etc., result from a combination of new semiconductor materials, new diode structures, careful material processing of bars. the latest progress of today's high-power diode lasers at home and abroad is briefly discussed and typical data are presented. The packaging process is of decisive importance for the applicability of high-power diode laser bars, not only technically but also economically. The packaging techniques include the material choosing and the structure optimizing of heat-sinks, the bonding between the array and the heat-sink, the cooling and the fiber coupling, etc. The status of packaging techniques is stressed. There are basically three different diode package architectural options according to the integration grade. Since the package design is dominated by the cooling aspect,. different effective cooling techniques are promoted by different package architectures and specific demands. The benefit and utility of each package are strongly dependent upon the fundamental optoelectronic properties of the individual diode laser bars. Factors which influence these properties are outlined and comparisons of packaging approaches for these materials are made. Modularity of package for special application requirements is an important developing tendency for high power diode lasers.

A direct digital frequency synthesizer with fourth-order phase domain Delta Sigma noise shaper and 12-bit current-steering DAC

This paper presents a direct digital frequency synthesizer (DDFS) with a 16-bit accumulator, a fourth-order phase domain single-stage Delta Sigma interpolator, and a 300-MS/s 12-bit current-steering DAC based on the Q(2) Random Walk switching scheme. The Delta Sigma interpolator is used to reduce the phase truncation error and the ROM size. The implemented fourth-order single-stage Delta Sigma noise shaper reduces the effective phase bits by four and reduces the ROM size by 16 times. The DDFS prototype is fabricated in a 0.35-mu m CMOS technology with active area of 1.11 mm(2) including a 12-bit DAC. The measured DDFS spurious-free dynamic range (SFDR) is greater than 78 dB using a reduced ROM with 8-bit phase, 12-bit amplitude resolution and a size of 0.09 mm(2). The total power consumption of the DDFS is 200)mW with a 3.3-V power supply.

Preparation and photovoltaic property of a new polyfluorene derivative/ZnO nanoparticles hybrid composites

A new kind of polyfluorene copolymers, poly(2,7-(9,9-dioctyl-fluorene)-alt-5,5 -(4',7'-di-2-thienyl-2',1',3',-benzothiadiazole) (PFDTBT), was prepared. The introduction of ZnO nanoparticles with perfect wurtzite crystal character into PFDTBT makes the resulted single-layer photovoltaic device to perform a significant photovoltaic response. Among the tested devices, the best performance is observed for that containing 60 wt% of ZnO nanoparticles, which has a photocurrent density of 1.17 mu A/cm(2), an open circuit voltage of 0.81 V. a fill factor of 0.09 and a power conversion efficiency of 0.009%. The results show that the polyfluorene derivatives/ZnO nanoparticles hybrid composites are excellent fluorescence and photovoltaic materials. (C) 2009 Elsevier B.V. All rights reserved.

Preparation and photovoltaic property of a new polyfluorene derivative/ZnO nanoparticles hybrid composites

A new kind of polyfluorene copolymers, poly(2,7-(9,9-dioctyl-fluorene)-alt-5,5 -(4',7'-di-2-thienyl-2',1',3',-benzothiadiazole) (PFDTBT), was prepared. The introduction of ZnO nanoparticles with perfect wurtzite crystal character into PFDTBT makes the resulted single-layer photovoltaic device to perform a significant photovoltaic response. Among the tested devices, the best performance is observed for that containing 60 wt% of ZnO nanoparticles, which has a photocurrent density of 1.17 mu A/cm(2), an open circuit voltage of 0.81 V. a fill factor of 0.09 and a power conversion efficiency of 0.009%. The results show that the polyfluorene derivatives/ZnO nanoparticles hybrid composites are excellent fluorescence and photovoltaic materials.

Monodisperse Co-oligomer Approach toward Nanostructured Films with Alternating Donor-Acceptor Lamellae

A series of donor-acceptor (D-A) co-oligomers with oligo(fluorene-alt-bithiophene) and perylene diimide as donor and acceptor segments, respectively, have been designed and synthesized. They can self-assembly into alternating D-A lamellar nanostructured films with the periods depending on the molecular length. These films have been successfully used in fabrication of high-performance single-molecular solar cells with power conversion efficiency up to 1.50%.

Solvent Vapor-Induced Self Assembly and its Influence on Optoelectronic Conversion of Poly(3-hexylthiophene): Methanofullerene Bulk Heterojunction Photovoltaic Cells

Nanoscale-phase separation of electron donor/acceptor blends is crucial for efficient charge generation and collection in Polymer bulk heterojunction photovoltaic cells. We investigated solvent vapor annealing effect of poly(3-hexylthiophene) (P3HT)/methanofullerene (PCBM) blend oil its morphology and optoelectronic properties. The organic solvents of choice for the treatment have a major effect oil the morphology of P3HT/PCBM blend and the device performance. Ultraviolet-visible absorption spectro,;copy shows that specific solvent vapor annealing can induce P3HT self-assembling to form well-ordered structure; and hence, file absorption in the red region and the hole transport are enhanced. The solvent that has a poor Solubility to PCBM Would cause large PCBM Clusters and result in a rough blend film. By combining an appropriate solvent vapor treatment and post-thermal annealing of the devices, the power conversion efficiency is enhanced.

基于电光材料的光学相控阵技术研究进展

综述了基于电光材料的光学相控阵(OPA)的研究进展。介绍了光学相控阵技术的基本原理以及不同电光材料(铌酸锂电光晶体,AlGaAs光波导,液晶和掺镧锆钛酸铅(PLZT)电光陶瓷)光学相控阵技术的基本构想和涉及的关键技术;着重介绍近年来基于PLZT电光陶瓷材料光学相控阵技术的发展情况以及在这方面的最新研究成果,包括单级相控阵、级联相控阵、不同电极结构(表面电极和上下电极结构)相控阵技术等;最后简要介绍了光学相控阵技术在激光雷达等军事领域中的应用。

Hybrid bulk heterojunction solar cells from a blend of poly(3-hexylthiophene) and TiO2 nanotubes

Hybrid bulk heterojunction solar cells based on blend of poly(3-hexylthiophene) (P3HT) and TiO2 nanotubes or dye(N719) modified TiO2 nanotubes were processed from solution and characterized to research the nature of organic/inorganic hybrid materials. Compared with the pristine polymer P3HT and TiO2 nanoparticles/P3HT solar cells, the TiO2 nanotubes/P3HT hybrid solar cells show obvious performance improvement, due to the formation of the bulk heterojunction and charge transport improvement. A further improvement in the device performance can be achieved by modifying TiO2 nanotube surface with a standard dye N719 which can play a role in the improvement of both the light absorption and charge dissociation. Compared with the non-modified TiO2 nanotubes solar cells, the modified ones have better power conversion efficiency under 100 mW/cm(2) illumination with 500W Xenon lamp. (C) 2008 Elsevier B. V. All rights reserved.