6 resultados para shift-work

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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In a recent experimental work on the excess photon detachment (EPD) of H- ions [Phys. Rev. Lett. 87 (2001) 243001] it has been found that the ponderomotive shift of each EPD peak increases with the order of the EPD channel. By using a nonperturbative quantum scattering theory, we obtain the kinetic energy spectra for the differential detachment rate along the laser polarization for several laser intensities. It is demonstrated that higher order EPD peaks are produced mainly at relatively higher laser intensities. By calculating the overall EPD spectra with varying laser intensities, it is found that the ponderomotive shift of each EPD peak increases with the order of the EPD channel. Our calculations are in good agreement with the experimental observation. It is found that different EPD channels occur mainly when the laser field reaches some values, thus the intensity distribution of the laser field is responsible for the varying ponderomotive shifts.

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A four-frame phase shift method and an associated algorithm using unequal phase steps are presented. The unique advantage of this method is that it becomes insensitive to phase shifter nonlinearity because of the performance of a special procedure, in which the phase shifts are shared out between the reference beam and the object beam. By this means, any phase shifter can work as long as one phase shift is accurately known. On the basis of the technique, a simple calibration method for the linear phase shifter is suggested. The influences of phase shifter miscalibration, detector nonlinearity and random noise on the algorithm are investigated, and the optimal phase shifts are given.

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We numerically investigate the main constrains for high efficiency wavelength conversion of differential phase-shift keying (DPSK) signals based on four-wave mixing (FWM) in highly nonlinear fiber (HNLF). Using multi-tone pump phase modulation techniques, high efficiency wavelength conversion of DPSK signals is achieved with the stimulated Brillouin scattering (SBS) effects effectively suppressed. Our analysis shows that there is a compromise between conversion efficiency and converted idler degradation. By optimizing the pump phase modulation configuration, the converted DPSK idler's degradation can be dramatically decreased through balancing SBS suppression and pump phase modulation degradation. Our simulation results also show that these multi-tone pump phase modulation techniques are more appropriate for the future high bit rate systems.

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The beating patterns in the Shubnikov-de Haas oscillatory magnetoresistance originating from zero-field spin splitting of two-dimensional electron gases (2DEGs) in In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As quantum wells with silicon delta doped on the upper barrier layer have been investigated by means of magnetotransport measurements before and after illumination. Contrary to the expectation, after each illumination, the beating nodes induced by the zero-field spin-splitting effect shift to lower and lower magnetic field due to the decrease in the zero-field spin-splitting energy of the 2DEGs. The anomalous phenomenon of the shift of the beating nodes and the decrease in spin-orbit coupling constants after illumination cannot be explained by utilizing the previous linear Rashba model. It is suggested that the decrease in the zero-field spin-splitting energy and the spin-orbit coupling constant arise from the nonlinear Rashba spin splitting.

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A porous InAlAs structure was first obtained by electrochemical etching. Nano-pore arrays were formed when the In0.52Al0.48As membrane was anodized at constant voltages in an HF aqueous solution. These self-assembled structures showed evident blue-shift photoluminescence emissions. While a quantum size effect alone underestimates the blue-shift energy for a sample with a relatively large average pore wall thickness, a novel effect caused by the asymmetric etching is proposed to account for this phenomenon. The results inferred from the x-ray double crystal diffraction are in good agreement with the experimental data.

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Organic thin-film transistors (OTFTs) using high dielectric constant material tantalum pentoxide (Ta2O5) and benzocyclobutenone (BCBO) derivatives as double-layer insulator were fabricated. Three metals with different work function, including Al (4.3 eV), Cr (4.5 eV) and Au (5.1 eV), were employed as gate electrodes to study the correlation between work function of gate metals and hysteresis characteristics of OTFTs. The devices with low work function metal Al or Cr as gate electrode exhibited high hysteresis (about 2.5 V threshold voltage shift). However, low hysteresis (about 0.7 V threshold voltage shift) OTFTs were attained based on high work function metal Au as gate electrode.