Scanning electron microscopy observation of in-device InAs/AlAs quantum dots by selective etching of capping layers

Self-assembled InAs/AlAs quantum dots embedded in a resonant tunneling diode device structure are grown by molecular beam epitaxy. Through the selective etching in a C6H8O7 center dot H2O-K3C6H5O7 center dot H2O-H2O2 buffer solution, 310 nm GaAs capping layers are removed and the InAs/AlAs quantum dots are observed by field-emission scanning electron microscopy. It is shown that as-fabricated quantum dots have a diameter of several tens of nanometers and a density of 10(10) cm(-2) order. The images taken by this means are comparable or slightly better than those of transmission electron microscopy. The undercut of the InAs/AlAs layer near the edges of mesas is detected and that verifies the reliability of the quantum dot images. The inhomogeneous oxidation of the upper AlAs barrier in H2O2 is also observed. By comparing the morphologies of the mesa edge adjacent regions and the rest areas of the sample, it is concluded that the physicochemical reaction introduced in this letter is diffusion limited.

Unveiling the morphology of buried In(Ga)As nanostructures by selective wet chemical etching: From quantum dots to quantum rings

The three-dimensional morphology of In(Ga)As nanostructures embedded in a GaAs matrix is investigated by combining atomic force microscopy and removal of the GaAs cap layer by selective wet etching. This method is used to investigate how the morphology of In(Ga)As quantum dots changes upon GaAs capping and subsequent in situ etching with AsBr3. A wave function calculation based on the experimentally determined morphologies suggests that quantum dots transform into quantum rings during in situ etching. (c) 2007 American Institute of Physics.

Novel folding 8x8 silicon-based optical matrix switch with tapered waveguides and self-aligned corner mirrors

Novel folding 8 x 8 matrix switches based on silicon on insulator were demonstrated. In the design, single-mode rib waveguides and multimode interferences are connected by optimized tapered waveguides to reduce the mode coupling loss between the two types of waveguides. The self-aligned method was applied to the key integrated turning mirrors for perfect positions and low loss of them. A mixed etching process including inductively coupled plasma and chemical etching was employed to etch waveguides and mirrors, respectively. The compact size of the device is only 20 x 3.2 mm(2). The switch element with high switching speed and low power consumption is presented in the matrix. The average insertion loss of the matrix is about -21 dB, and the excess loss of one mirror is measured of -1.4 dB. The worst crosstalk is larger than 21 dB. Experimental results illuminate that some of the main characteristics of optical matrix switches are. developed in the modified design, which is in accord with theoretic analyses.

Increasing the photoluminescence intensity of Ge islands by chemical etching

Self-assembled Ge islands were grown on Si(100) substrate by Si2H6-Ge molecular beam epitaxy. After being subjected to chemical etching, it is found that the photoluminescence from the etched Ge islands became more intense and shifted to the higher-energy side compared to that of the as-deposited Ge islands. This behaviour was explained by the effect of chemical etching on the morphology of the Ge islands. Our results demonstrate that chemical etching can be a way to change the luminescence property of the as-deposited islands.

Changing the size and shape of Ge island by chemical etching

Self-assembled Ge islands were grown on Si (1 0 0) substrate by Si2H6-Ge molecular beam epitaxy. Subjected to a chemical etching, it is found that the size and shape (i.e. ratio of height to base width) of Ge islands change with etching time. In addition, the photoluminescence from the etched Ge islands shifted to the higher energy side compared to that of the as-deposited Ge islands. Our results demonstrated that chemical etching can be a way to change the size and shape of the as-deposited islands as well as their luminescence property. (C) 2001 Elsevier Science B.V. All rights reserved.

Direct patterning of negative nanostructures on self-assembled monolayers of 16-mercaptohexadecanoic acid on Au(111) substrate via dip-pen nanolithography

Both bare and self-assembled monolayer (SAM) protected gold substrate could be etched by allyl bromide according to atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS) and inductively coupled plasma mass spectrometric (ICPMS) analysis results. With this allyl bromide ink material, negative nanopatterns could be fabricated directly by dip-pen nanolithography (DPN) on SAMs of 16-mercaptohexadecanoic acid (MHA) on Au(111) substrate. A tip-promoted etching mechanism was proposed where the gold-reactive ink could penetrate the MHA resist film through tip-induced defects resulting in local corrosive removal of the gold substrate. The fabrication mechanism was also confirmed by electrochemical characterization, energy dispersive spectroscopy (EDS) analysis and fabrication of positive nanopatterns via a used DPN tip.

Covalently attached multilayer assemblies containing photoreactive diazo-resins and conducting polyaniline

We reported on the multilayer architecture containing diazo-resins (DAR) as polycations and polyaniline poly(aniline-co-N-propanesulfonic acid aniline) (PAPSAH) as polyanions held together by electrostatic interaction. Upon UV irradiation, the adjacent interfaces of the multilayer reacted to form a covalently crosslinking structure which greatly improved the stability of the films as confirmed by solvent etching experiments. These changes were confirmed by UV-Vis and FTIR spectroscopy. The thickness of the covalently attached films were characterized with small angle X-ray diffraction (SAXD) and a value of 30.0 Angstrom per bilayer was obtained. This type of film was further characterized by cyclic voltammetry which showed that the electroactive property of PAPSAH was still kept in the films after photoreaction. (C) 2000 Elsevier Science B.V. All rights reserved.