Novel method for design of surface relief guided-mode resonant gratings at normal incidence

We demonstrate that the surface relief guided-mode resonant gratings with specified central wavelength and FWHM in the visible wavelength range can be designed by analyzing the complex poles of Reflectance and transmission coefficient matrix algorithm (RTCM), a variant of S-matrix propagation algorithm proposed for calculation of multilayer gratings. In addition, FWHM is computed with couple-mode (CM) theory of resonant gratings which is firstly extended by Norton et al. in calculation of waveguide grating. Furthermore, the side band reflections of the filter can be reduced to less than 5% in the visible wavelength with the antireflection (AR) design technique widely used in the thin-film field. (C) 2008 Elsevier B.V. All rights reserved.

Surface relief resonant Brewster niters with multiple channels

In this paper, a new type of resonant Brewster filters (RBF) with surface relief structure for the multiple channels is first presented by using the rigorous coupled-wave analysis and the S-matrix method. By tuning the depth of homogeneous layer which is under the surface relief structure, the multiple channels phenomenon is obtained. Long range, extremely low sidebands and multiple channels are found when the RBF with surface relief structure is illuminated with Transverse Magnetic incident polarization light near the Brewster angle calculated with the effective media theory of sub wavelength grating. Moreover, the wavelengths of RBF with surface relief structure can be easily shifted by changing the depth of homogeneous layer while its optical properties such as low sideband reflection and narrow band are not spoiled when the depth is changed. Furthermore, the variation of the grating thickness does not effectively change the resonant wavelength of RBF, but have a remarkable effect on its line width, which is very useful for designing such filters with different line widths at desired wavelength.

Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)

Crack-free GaN films have been achieved by inserting an Indoped low-temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants c and a obtained by X-ray diffraction analysis shows that indium doping interlayer can reduce the stress in GaN layers. The stress in GaN decreases with increasing trimethylindium (TMIn) during interlayer growth. Moreover, for a smaller TMIn flow, the stress in GaN decreases dramatically when In acts as a surfactant to improve the crystallinity of the AlGaN interlayer, and for a larger TMIn flow, the stress will increase again. The decreased stress leads to smoother surfaces and fewer cracks for GaN layers by using an In-doped interlayer than by using an undoped interlayer. In doping has been found to enhance the lateral growth and reduce the growth rate of the c face. It can explain the strain relief and cracks reduction in GaN films. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Comparison and combination of several stress relief methods for cubic boron nitride films deposited by ion beam assisted deposition

Cubic boron nitride (c-BN) films were prepared by ion beam assisted deposition (IBAD) technique, and the stresses were primary estimated by measuring the frequency shifts in the infrared-absorption peaks of c-BN samples. To test the possible effects of other factors, dependencies of the c-BN transversal optical mode position on film thickness and c-BN content were investigated. Several methods for reducing the stress of c-BN films including annealing, high temperature deposition, two-stage process, and the addition of a small amount of Si were studied, in which the c-BN films with similar thickness and cubic phase content were used to evaluate the effects of the various stress relief methods. It was shown that all the methods can reduce the stress in c-BN films to various extents. Especially, the incorporation of a small amount of Si (2.3 at.%) can result in a remarkable stress relief from 8.4 to similar to 3.6 GPa whereas the c-BN content is nearly unaffected, although a slight degradation of the c-BN crystallinity is observed. The stress can be further reduced down below I GPa by combination of the addition of Si with the two-stage deposition process. (c) 2008 Elsevier B.V. All rights reserved.

AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S

We investigated AlGaN layers grown by metalorganic chemical vapor deposition (MOCVD) on high temperature (HT-)GaN and AlGaN buffer layers. On GaN buffer layer, there are a lot of surface cracking because of tensile strain in subsequent AlGaN epilayers. On HT-AlGaN buffer layer, not only cracks but also high densities rounded pits present, which is related to the high density of coalescence boundaries in HT-AlGaN growth process.The insertion of interlayer (IL) between AlGaN and the GaN pseudosubstrate can not only avoid cracking by modifying the strain status of the epilayer structure, but also improved Al incorporation efficiency and lead to phase-separation. And we also found the growth temperature of IL is a critical parameter for crystalline quality of subsequent AlGaN epilayer. Low temperature (LT-) A1N IL lead to a inferior quality in subsequent AlGaN epilayers.

Boundary effect of relief structure on crystallization of diblock copolymer in thin films

In this Letter, crystal growth of a symmetric crystalline-amorphous diblock copolymer, poly(styrene-b-epsilon-caprolactone) (PS-b-PCL), in thin films was investigated by atomic force microscopy (AFM), Relief structures of holes and islands were formed during annealing the film at the molten state, and the in situ observation of subsequent crystal growth at room temperature indicated that the crystals were preferred to occur at the edge of holes or islands and grew into the interior area. It was concluded that the stretched PCL blocks at the edge of relief structures, caused by material transportation or deformation of the interface, could act as nucleation agents during polymer crystallization. The crystal growth rate of individual lamellae varied both from lamellae to lamellae and in time, but the area occupied by crystals increased constantly with time. At 22 degreesC, the growth rate was 1.2 x 10(-2) mum(2)/min with the scan size 2 x 2 mum(2).

Measurements Of In Situ Stress And Mining-Induced Stress In Beiminghe Iron Mine Of China

In order to obtain the distribution rules of in situ stress and mining-induced stress of Beiminghe Iron Mine, the stress relief method by overcoring was used to measure the in situ stress, and the MC type bore-hole stress gauge was adopted to measure the mining-induced stress. In the in situ stress measuring, the technique of improved hollow inclusion cells was adopted, which can realize complete temperature compensation. Based on the measuring results, the distribution model of in situ stress was established and analyzed. The in situ stress measuring result shows that the maximum horizontal stress is 1.75-2.45 times of vertical stress and almost 1.83 times of the minimum horizontal stress in this mineral field. And the mining-induced stress measuring result shows that, according to the magnitude of front abutment pressure the stress region can be separated into stress-relaxed area, stress-concentrated area and initial stress area. At the -50 m mining level of this mine, the range of stress-relaxed area is 0-3 m before mining face; the range of stress-concentrated area is 3-55 m before mining face, and the maximum mining-induced stress is 16.5-17.5 MPa, which is 15-20 m from the mining face. The coefficient of stress concentration is 1.85.

高精度微结构聚合物光栅的复制技术

光栅复制是降低光栅制造成本,提高产量的一条有效途径。研究了利用紫外压印技术复制微结构光栅的方法。使用玻璃基底矩形浮雕结构的微结构光栅作为母光栅,给出了利用聚二甲基硅氧烷(PDMS)制作光栅模具和在光敏聚合物材料上复制微结构光栅的详细过程。经过优化工艺条件,成功地复制了一系列不同周期和开口比的微结构光栅,测试了复制光栅和母光栅的衍射图像和0级与±1级的衍射强度,结果表明,复制光栅和母光栅的衍射图像与光强分布基本一致。

NUMERICAL STUDY OF DAMMANN ARRAY ILLUMINATORS

The numerical solutions of binary-phase (0, tau) gratings for one-dimensional array illuminators up to 32 are presented. Some fabrication errors, which are due to position-quantization errors, phase errors, dilation (or erosion) errors, and the side-slope error, are calculated and show that even-number array illuminators are superior to odd-number array illuminators when these fabrication errors are considered. One (0, tau) binary-phase, 8 x 16 array illuminator made with the wet-chemical-etching method is given in this paper.

Optimized condition for etching fused-silica phase gratings with inductively coupled plasma technology

Polymer deposition is a serious problem associated with the etching of fused silica by use of inductively coupled plasma (ICP) technology, and it usually prevents further etching. We report an optimized etching condition under which no polymer deposition will occur for etching fused silica with ICP technology. Under the optimized etching condition, surfaces of the fabricated fused silica gratings are smooth and clean. Etch rate of fused silica is relatively high, and it demonstrates a linear relation between etched depth and working time. Results of the diffraction of gratings fabricated under the optimized etching condition match theoretical results well. (c) 2005 Optical Society of America.

High-fidelity replication of Dammann gratings using soft lithography

We report the experimental results of using the soft lithography method for replication of Dammann gratings. By using an elastomeric stamp, uniform grating structures were transferred to the LTV-curable polymer. To evaluate the quality of the replication, diffraction images and light intensity were measured. Compared with the master devices, the replicas of Dammann gratings show a slight deviation in both surface relief profile and optical performance. Experimental results demonstrated that high-fidelity replication of Dammann gratings is realized by using soft lithography with low cost and high throughput. (C) 2008 Optical Society of America.

Beam splitting of low-contrast binary gratings under second Bragg angle incidence

Beam splitting of low-contrast rectangular gratings under second Bragg angle incidence is studied. The grating period is between lambda and 2 lambda. The diffraction behaviors of the three transmitted propagating orders are illustrated by analyzing the first three propagating grating modes. From a simplified modal approach, the design conditions of gratings as a high-efficiency element with most of its energy concentrated in the -2nd transmitted order (similar to 90%) and of gratings as a 1 x 2 beam splitter with a total efficiency over 90% are derived. The grating parameters for achieving exactly the splitting pattern by use of rigorous coupled-wave analysis verified the design method. A 1 x 3 beam splitter is also demonstrated. Moreover, the polarization-dependent diffraction behaviors are investigated, which suggest the possibility of designing polarization-selective elements under such a configuration. The proposed concept of using the second Bragg angle should be helpful for developing new grating-based devices. (C) 2008 Optical Society of America.

Form Birefringence in thin films with oblique columnar structures

Effective medium theory is useful for designing optical elements with form birefringent subwavelength structures. Thin films fabricated by oblique deposition are similar to the two-dimensional surface relief subwavelength gratings. We use the effective medium theory to calculate the anisotropic optical properties of the thin films with oblique columnar structures. The effective refractive indices and the directions are calculated from effective medium theory. It is shown that optical thin films with predetermined refractive indices and birefringence may be engineered.

A hierarchical approach coupled with coarse DEM information for improving the efficiency and accuracy of forest mapping over very rugged terrains

Forest mapping over mountainous terrains is difficult because of high relief Although digital elevation models (DEMs) are often useful to improve mapping accuracy, high quality DEMs are seldom available over large areas, especially in developing countries

A Single-Fundamental-Mode Photonic Crystal Vertical Cavity Surface Emitting Laser

Single-fundamental-mode photonic crystal (PhC) vertical cavity surface emitting lasers (VCSEL) are produced and their single-fundamental-mode performances are investigated and demonstrated. A two-dimensional PhC with single-point-defect structure is fabricated using UV photolithography and inductive coupled plasma reactive ion etching on the surface of the VCSEL's top distributed Bragg-reflector. The PhC VCSEL maintains single-fundamental-mode operating with output power 1.7 mW and threshold current 2.5 mA. The full width half maximum of the lasing spectrum is less than 0.1 nm, the far field divergence angle is less than 10 degrees and the side mode suppression ratio is over 35 dB. The device characteristics are analyzed based on the effective index model of the photonic crystal fiber. The experimental results agree well with the theoretical expectation.