Optical characteristics of DBR with inhomogeneous graded interfaces

Optical properties of Al0.9Ga0.1As/Al gamma Ga1-gamma As/GaAs/Al chi Ga1-chi As DBR with inhomogeneous graded interfaces has been investigated by using characteristic matrix method. The refractive index model and the analytic characteristic matrix of graded interfaces are obtained. The reflectance spectrum and the reflective phase shift are calculated for GaAs/Al-0.9 Ga-0.1 As DBR and graded interfaces DBR by using characteristic matrix method. The effect of graded interfaces on the optical properties of DBR is discussed. The result shows an extra graded phase matching layer must he added in front of the graded interfaces DBR to fulfil the conditions of phase matching at central wavelength. The accurate thickness of phase matching layer is calculated by optical thickness approximation method.

Design of high brightness cubic-GaN LEDs grown on GaAs substrate

The Principle of optical thin film was used to calculate the feasibility of improving the light extraction efficiency of GaN/GaAs optical devices by wafer-bonding technique. The calculated results show that the light extraction efficiency of bonded samples can be improved by 2.66 times than the as-grown GaN/GaAs samples when a thin Ni layer was used as adhesive layer and Ag layer as reflective layer. Full reflectance spectrum comparison shows that reflectivity for the incident light of 459.2 nm of the bonded samples was improved by 2.4 times than the as-grown samples, which is consistent with the calculated results.

Visible vertical cavity surface emitting laser

We have designed and fabricated the visible vertical-cavity surface-emitting lasers (VCSEL's) by using metalorganic vapor phase epitaxy (MOVPE). We use the 8 lambda optical cavities with 3 quantum wells in AlGaInP/AlGaAs red VCSEL's to reduce the drift leakage current and enhance the model gain in AlGaInP active region. The structure has a p-type stack with 36 DBR pairs on the top and an n-type with 55-1/2 pairs on the bottom. Using micro-area reflectance spectrum, we try to get a better concordance between the center wavelength of DBR and the emitting wavelength of the active region. We used a component graded layer of 0.05 lambda thick (x = 0.5 similar to 0.9) at the p-type DBR AlGaAs/AlAs interface to reduce the resistance of p-type DBR. We use selective oxidation to define the current injection path. Because the oxidation rate of a thick layer is faster than a thinner one, we grown a thick AlAs layer close to the active region. In this way, we got a smaller active region for efficient confinement of injected carriers (the aperture area is 3 x 3 mu m) to reduce the threshold and, at the same time, a bigger conductive area in the DBR layers to reduce the resistance. We employ Zn doping on the p-side of the junction to improve hole injection and control the Zn dopant diffusion to get proper p-i-n junction. At room temperature, pulse operation of the laser has been achieved with the low threshold current of 0.8mA; the wavelength is about 670nm.

Design of high brightness cubic-GaN LEDs grown on GaAs substrate

The Principle of optical thin film was used to calculate the feasibility of improving the light extraction efficiency of GaN/GaAs optical devices by wafer-bonding technique. The calculated results show that the light extraction efficiency of bonded samples can be improved by 2.66 times than the as-grown GaN/GaAs samples when a thin Ni layer was used as adhesive layer and Ag layer as reflective layer. Full reflectance spectrum comparison shows that reflectivity for the incident light of 459.2 nm of the bonded samples was improved by 2.4 times than the as-grown samples, which is consistent with the calculated results.

Photoluminescence properties of LaF3: Eu3+ nanoparticles prepared by refluxing method

The europium-doped LaF3 nanoparticles were prepared by refluxing method in glycerol/water mixture and characterized with X-ray diffraction(XRD), field emission scanning electron microscopy(FE-SEM), UV-vis diffuse reflectance spectrum, and photoluminescence spectra. The results of XRD indicated that the obtained LaF3: Eu3+ nanoparticles were well crystallized with a hexagonal structure. ne FE-SEM image illustrated that the LaF3: Eu3+ nanoparticles were spherical with an average size around 30 nm. Under irradiation of UV light, the emission spectrum of LaF3: Eu3+ nanoparticles exhibited the characteristic line emissions arising front the D-5(0)-> F-7(J), (J=1, 2, 3, 4) transitions of the Eu3+ ions, with the dominating emission centered at 590 nm. In addition, the emissions from the 51), level could be clearly observed due to the low phonon energies (-350 cm(-1)) of LaF3 matrix. The optimum doping concentration for LaF3: Eu3+ nanoparticles was determined to be 20mol.%.

Influence of ZrO2 in HfO2 on reflectance of HfO2/SiO2 multilayer at 248 nm prepared by electron-beam evaporation

Influence of ZrO2 in HfO2 on the reflectance of HfO2/SiO2 multilayer at 248 nm was investigated. Two kinds of HfO2 with different ZrO2 content were chosen as high refractive index material and the same kind of SiO2 as low refractive index material to prepare the mirrors by electron-beam evaporation. The impurities in two kinds of HfO2 starting coating materials and in their corresponding single layer thin films were determined through glow discharge mass spectrum (GDMS) technology and secondary ion mass spectrometry (SIMS) equipment, respectively. It showed that between the two kinds of HfO2, either the bulk materials or their corresponding films, the difference of ZrO2 was much larger than that of the other impurities such as Ti and Fe. It is the Zr element that affects the property of thin films. Both in theoretical and in experimental, the mirror prepared with the HfO2 starting material containing more Zr content has a lower reflectance. Because the extinction coefficient of zirconia is relatively high in UV region, it can be treated as one kind of absorbing defects to influence the optical property of the mirrors. (C) 2008 Elsevier B.V. All rights reserved.

A STUDY OF THE SPECTRUM PROPERTIES AND THE PHOTOVOLTAGE RESPONSE OF NANOCRYSTALLINE ND2O3

The diffuse reflectance spectra of nanocrystalline Nd2O3 were measured in the ultraviolet-visible region, It is found that the part of f-->f transition bands were widened and red-shift occurred. The absorption tail-band in the region from 300 to 550 nm was assigned to the O-2p-->Nd-4f transition. The behavior of light-induced charge transfer and photovoltaic properties of nanocrystalline Nd2O3 were studied by the surface photovoltage spectroscopy (SPS) and electric field modulating SPS techniques. The SPS response shows two peaks at 330 nm(P-1) and 380 nm(P-2) in the UV-Vis range, The spectral features observed can be explained in terms of charge transfer and interband transition.

The Photovoltage Properties and the Spectrum Analyses of Nanocrystalline Er2O3

The diffuse reflectance spectra of nanocrystalline Er2O3 were measured in the UV-vis region. It was found that the f -> f transition bands become stronger with the decrease of the size of particles. The tail-band in the range of 300 similar to 550nm was assigned to the O2p -> Er4f transition. Both behavior of light-induced charge transfer and photovoltaic properties of nanocrystalline Er2O3 were investigated with surface photovoltage spectroscopy (SPS). The SPS shows that two peaks appear at 340nm (p(1)) and 385nm (p(2)). The observed spectral features can be explained in terms of charge transfer and interband transition.

Objective speckle method using stick-on foil and its applications

Objective speckle from a stick-on foil is a new approach to applying the objective white light speckle method to in-plane displacement measurements. By a relatively easy technique a thin aluminum foil is mounted onto the specimen surface and a random grating is scratched onto it, yielding high reflectance and fine optical details. After double exposure by a direct recording system without using a lens, the resulting holographic film possesses a broad spatial spectrum and displacement information. Full-field contour maps of equal displacement can be obtained that are of good contrast and high sensitivity and that have a large adjustable measurement range. The method can be applied to practical engineering problems for both plane and developable curved surfaces.

Transmission spectrum of a double quantum-dot-nanocavity system in photonic crystals

We investigate the optical transmission properties of a combined system which consists of two quantum-dot-nanocavity subsystems indirectly coupled to a waveguide in a planar photonic crystal. A Mollow-like triplet and the growth of sidebands are found, reflecting intrinsic optical responses in the complex microstructure.

Energy spectrum of fermionized bosonic atoms in optical lattices

We investigate the energy spectrum of fermionized bosonic atoms, which behave very much like spinless noninteracting fermions, in optical lattices by means of the perturbation expansion and the retarded Green's function method. The results show that the energy spectrum splits into two energy bands with single-occupation; the fermionized bosonic atom occupies nonvanishing energy state and left hole has a vanishing energy at any given momentum, and the system is in Mott-insulating state with a energy gap. Using the characteristic of energy spectra we obtained a criterion with which one can judge whether the Tonks-Girardeau (TG) gas is achieved or not.

Energy spectrum of two-component Bose-Einstein condensates in optical lattices

With the method of Green's function, we investigate the energy spectra of two-component ultracold bosonic atoms in optical lattices. We End that there are two energy bands for each component. The critical condition of the superfluid-Mott insulator phase transition is determined by the energy band structure. We also find that the nearest neighboring and on-site interactions fail to change the structure of energy bands, but shift the energy bands only. According to the conditions of the phase transitions, three stable superfluid and Mott insulating phases can be found by adjusting the experiment parameters. We also discuss the possibility of observing these new phases and their transitions in further experiments.

Energy spectrum of ground state and excitation spectrum of quasi-particle for hard-core boson in optical lattices

We investigate the energy spectrum of ground state and quasi-particle excitation spectrum of hard-core bosons, which behave very much like spinless noninteracting fermions, in optical lattices by means of the perturbation expansion and Bogoliubov approach. The results show that the energy spectrum has a single band structure, and the energy is lower near zero momentum; the excitation spectrum gives corresponding energy gap, and the system is in Mott-insulating state at Tonks limit. The analytic result of energy spectrum is in good agreement with that calculated in terms of Green's function at strong correlation limit.

Hit-or-miss representation of a pattern spectrum and its optical implementation

We demonstrate that a pattern spectrum can be decomposed into the union of hit-or-miss transforms with respect to a series of structure-element pairs. Moreover we use a Boolean-logic function to express the pattern spectrum and show that the Boolean-logic representation of a pattern spectrum is composed of hit-or-miss min terms. The optical implementation of a pattern spectrum is based on an incoherent optical correlator with a feedback operation. (C) 1996 Optical Society of America