Recursion 方法及其在复杂杂质问题中的应用

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BAND DISPERSION IN THE RECURSION METHOD

The advantages of the supercell model in employing the recursion method are discussed in comparison with the cluster model. A transformation for changing complex Bloch-sum seed states to real seed states in recursion calculations is presented and band dispersion in the recursion method is extracted with use of the Lanczos algorithm. The method is illustrated by the band structure of GaAs in the empirical tight-binding parametrized model. In the supercell model, the treatment of boundary conditions is discussed for various seed-state choices. The method is useful in applying tight-binding techniques to systems with substantial deviations from periodicity.

一种步进扫描投影光刻机承片台不平度检测新技术

提出一种步进扫描投影光刻机承片台不平度检测新技术。在晶圆与承片台存在不同偏移量时,利用线性差分传感器在线测量晶圆上不同点的局部高度;通过建立临时边界条件,以递推法消除晶圆面形影响,并逐行计算出承片台的相对不平度;通过逐行计算的结果递推相邻行之间的高度差,并将该高度差叠加到每一行,以消除临时边界条件的限制,得到处于同一高度上的承片台不平度;将计算的结果作为初始值,根据最小二乘原理,以邻近的四个测量点作为参考,逐步逼近得到承片台的真实不平度。计算机仿真结果验证了该检测方法的正确性,计算结果逐步收敛并逼近真实值

Spin-dependent transport through Cd1-xMnxTe diluted magnetic semiconductor quantum dots

We theoretically investigate the spin-dependent transport through Cd1-xMnxTe diluted magnetic semiconductor (DMS) quantum dots (QD's) under the influence of both the external electric field and magnetic field using the recursion method. Our results show that (1) it can get a 100% polarized electric current by using suitable structure parameters; (2) for a fixed Cd1-xMnxTe DMS QD, the wider the system is, the more quickly the transmission coefficient increases; (3) for a fixed system length, the transmission peaks of the spin-up electrons move to lower Fermi energy with increasing Cd1-xMnxTe DMS QD radius, while the transmission of the spin-down electrons is almost unchanged; (4) the spin-polarized effect is slightly increased for larger magnetic fields; (5) the external static electric field moves the transmission peaks to higher or lower Fermi energy depending on the direction of the applied field; and (6) the spin-polarized effect decreases as the band offset increases. Our calculated results may be useful for the application of Cd1-xMnxTe DMS QD's to the spin-dependent microelectronic and optoelectronic devices.

Electron transport through hierarchical self-assembly of GaAs/AlxGa1-xAs quantum dots

The transmission of electrons through a hierarchical self-assembly of GaAs/AlxGa(1-)xAs quantum dots (QDs) is calculated using the coupled-channel recursion method. Our results reveal that the number of conductance peaks does not change when the barrier widths change, but the intensities decrease as the barrier widths increase. The conductance peaks will shift towards low Fermi energies as the transverse width of GaAs QD increases, as the thickness of GaAs quantum well increases, or as the height of GaAs QDs decreases. Our calculated results may be useful in the application of QDs to photoelectric devices. (c) 2005 American Institute of Physics.

A differential recursive scheme for suppression of Peak to average power ratio for OFDM

A differential recursive scheme for suppression of Peak to average power ratio (PAPR) for Orthogonal frequency division multiplexing (OFDM) signal is proposed in this thesis. The pseudo-randomized modulating vector for the subcarrier series is differentially phase-encoded between successive components in frequency domain first, and recursion manipulates several samples of Inverse fast Fourier transformation (IFFT) output in time domain. Theoretical analysis and experimental result exhibit advantage of differential recursive scheme over direct output scheme in PAPR suppression. And the overall block diagram of the scheme is also given.

Electron transport through coupled quantum dots

The transmission through coupled quantum dots (CQDs) is calculated using the coupled-channel recursion method. Our results reveal that the conductance peaks move to high energy as the CQDs radius decreases or the period increases. If we increase the transverse momentum the conductance peaks move to high energy. Applying this characteristic, we can design a switch device using CQDs by applying a static electric field perpendicular to transmission direction. The theoretical results qualitatively agree with the available experimental data. Our calculated results may be useful for the application of CQDs to photoelectric devices. (C) 2003 American Institute of Physics.

Transport properties through quantum dot in a vertical electric field

The transport properties through a quantum dot are calculated using the recursion method. The results show that the electric fields can move the conductive peaks along the high- and low-energies. The electric field changes the intensity of conductance slightly. Our theoretical results should be useful for researching and making low-dimensional semiconductor optoelectronic devices. (C) 2002 Elsevier Science B.V. All rights reserved.

Electron and hole transport through quantum dots

The transmission through quantum dots (QDs) is calculated using the recursion method. In our calculation, the effect of finite offset is taken into account. The results show that the shapes of the QDs determine the number of resonant tunneling peaks and the distances between the peaks decrease as the radii of the QDs increase. The intensities of the conductance are strongly dependent on the barrier widths. The conductance peaks are split when transmitting through two QDs. The theoretical results qualitatively agree with the available experimental data. Our calculated results should be useful for the application of QDs to photoelectric devices. (C) 2002 American Institute of Physics.

RESONANT TUNNELING, EIGENVALUE AND ENERGY-BAND CALCULATION FOR POTENTIAL AND PERIODIC POTENTIAL STRUCTURES

Recursion formulae for the reflection and the transmission probability amplitudes and the eigenvalue equation for multistep potential structures are derived. Using the recursion relations, a dispersion equation for periodic potential structures is presented. Some numerical results for the transmission probability of a double barrier structure with scattering centers, the lifetime of the quasi-bound state in a single quantum well with an applied field, and the miniband of a periodic potential structure are presented.

硅中层错带中空位的电子态

计算了硅中带状层错中的空位电子态，所使用的Recursion方法是建立在原子轨道线性组合法的基础上，考虑了s~-p~-,d~-型十个原子轨道。用Lanczos法得到了带隙及带连续态中的电子态，局域态密度是用连续连分数来表示的，硅中理想空位的三重简并态分裂为三个能级。从价态顶算起，它们的能量分别为-0.3,0.3,1.7eV。价带顶之上0.3eV的带隙态同纯层错中发现的电子态相似，但局域态密度要高一些。价带顶之上1.7eV的在导带中的电子态是一个强共振态。价带顶之下0.3eV的价带中的电子态则是一个弱共振态。

Transport properties through quantum dot in a vertical electric field

The transport properties through a quantum dot are calculated using the recursion method. The results show that the electric fields can move the conductive peaks along the high- and low-energies. The electric field changes the intensity of conductance slightly. Our theoretical results should be useful for researching and making low-dimensional semiconductor optoelectronic devices. (C) 2002 Elsevier Science B.V. All rights reserved.

Theoretical study of p-d hybridization in Co perovskite

The real-space recursion method and unrestricted Hartree-Fock approximation have been applied to calculate the density of states of various Co perovskite, CeCoO3, SrCoO3 and Sr1-xCexCoO3. We have studied the magnetically ordered states of these Co perovskites in an enlarged double cell, and find its various magnetic structures due to the occupancy of 3d band and its interaction with neighboring Co ions. In this study, we have studied the p-d hybridization of the three Co perovskites, we find t(2g) electrons are localized and the flat e(g) band is responsible for the itinerant behavior, and although the rare earth elements itself contribute little to the DOS at the Fermi energy, the DOS at Fermi energy and the magnetic moment changed consequently because of different valence of Co ions in these compounds and p-d hybridization effect is very important. (C) 2009 Elsevier B.V. All rights reserved.