BAND DISPERSION IN THE RECURSION METHOD


Autoria(s): WANG YL
Data(s)

1991

Resumo

The advantages of the supercell model in employing the recursion method are discussed in comparison with the cluster model. A transformation for changing complex Bloch-sum seed states to real seed states in recursion calculations is presented and band dispersion in the recursion method is extracted with use of the Lanczos algorithm. The method is illustrated by the band structure of GaAs in the empirical tight-binding parametrized model. In the supercell model, the treatment of boundary conditions is discussed for various seed-state choices. The method is useful in applying tight-binding techniques to systems with substantial deviations from periodicity.

Identificador

http://ir.semi.ac.cn/handle/172111/14309

http://www.irgrid.ac.cn/handle/1471x/101189

Idioma(s)

英语

Fonte

WANG YL.BAND DISPERSION IN THE RECURSION METHOD,PHYSICAL REVIEW B,1991,43(15):12464-12469

Palavras-Chave #半导体物理 #ELECTRONIC-STRUCTURE #SEMICONDUCTORS #SILICON #DISLOCATIONS #ENVIRONMENT #DEFECTS #STATES
Tipo

期刊论文