131 resultados para radius of curvature measurement
em Chinese Academy of Sciences Institutional Repositories Grid Portal
Resumo:
A simple method for measuring the radius of curvature of laser beams is introduced. It has been developed to estimate the astigmatic aberration of a diode laser. Compared with the interferornetry, this method is convenient and straightforward. (c) 2005 Elsevier GmbH. All rights reserved.
Resumo:
The possibility of lifetime measurement in a flowing medium with phase fluorometry is investigated theoretically. A 3-D time dependent partial differential equation of the number density of atoms (or molecules) in the upper level of the fluorescence transition is solved analytically, taking flow, diffusion, optical excitation, decay, Doppler shift, and thickness of the excitation light sheet into account. An analytical expression of the intensity of the fluorescence signal in the flowing medium is deduced. Conditions are given, in which the principle of lifetime measurement with phase fluorometry in the static sample cell can be used in a flowing medium.
Resumo:
We present what we believe is a novel technique based on the moire effect for fully diagnosing the beam quality of an x-ray laser. Using Fresnel diffraction theory, we investigated the intensity profile of the moire pattern when a general paraxial beam illuminates a pair of Ronchi gratings in the quasi-far field. Two formulas were derived to determine the beam quality factor M-2 and the effective radius of curvature R-e from the moire pattern. On the basis of the results, the far-field divergence, the waist location, and the radius can be calculated further. Finally, we verified the approach by use of numerical simulation. (C) 1999 Optical Society of America [S0740-3232(99)01502-1].
Resumo:
Self-organized Al0.3Ga0.7As islands generated on the (100) facet are achieved by liquid phase epitaxy. Three particularly designed experimental conditions-partial oxidation, deficient solute and air quenching-result in defect-free nucleation. Micron-sized frustums and pyramids are observed by a scanning electron microscope. The sharp end of the tip has a radius of curvature less than 50 nm. It is proposed that such Al0.3Ga0.7As islands may be potentially serviceable in microscale and nanoscale fabrication and related spheres. (C) 2004 Elsevier B.V. All rights reserved.
Resumo:
A simple method based on the effective index method was used to estimate the minimum bend radii of curved SOI waveguides. An analytical formula was obtained to estimate the minimum radius of curvature at which the mode becomes cut off due to the side radiative loss.
Resumo:
A novel design of 100GHz-spaced 16channel arrayed-waveguide grating (AWG) based on silica-on-silicon chip is reported.AWG is achieved by adding a Y-branch to the AWG and arranging the input/output channel in a neat row,so the whole configuration can be aligned and packaged using only one fiber-array.This configuration can decrease the device's size,enlarge the minimum radius of curvature,save time on polishing and alignment,and reduce the chip's fabrication cost.
Resumo:
Demonstrations of cw lasing in Cr2+:ZnSe poly-crystal are reported. The laser consists of a 1.7-mm-thick Cr2+:ZnSe poly-crystal disc pumped by a Tm-silica double-clad fibre laser at 2050nm. Using a concave high-reflection mirror with a radius of curvature of 500mm as the rear mirror, the laser delivers up to 1030mW of radiation around 2.367 mu m.
Resumo:
A novel technique of manufacturing Al0.3Ga0.7As pyramids by liquid phase epitaxy (LPE) for scanning probe microscopy (SPM) sensors is reported Four meticulously designed conditions-partial oxidation, deficient solute, air quenching and germanium doping result in defect-free homogeneous nucleation and subsequent pyramid formation. Micrometer-sized frustums and pyramids are detected by scanning electron microscopy (SEM). The sharp end of the microtip has a radius of curvature smaller than 50 nm. It is believed that such accomplishments would contribute not only to crystal growth theory, but also to miniature fabrication technology.
Resumo:
Gaussian beam is the asymptotic solution of wave equation concentred at the central ray. The Gaussian beam ray tracing method has many advantages over ray tracing method. Because of the prevalence of multipath and caustics in complex media, Kirchhoff migration usually can not get satisfactory images, but Gaussian beam migration can get better results.The Runge-Kutta method is used to carry out the raytracing, and the wavefront construction method is used to calculate the multipath wavefield. In this thesis, a new method to determine the starting point and initial direction of a new ray is proposed take advantage of the radius of curvature calculated by dynamic ray tracing method.The propagation characters of Gaussian beam in complex media are investigated. When Gaussian beam is used to calculate the Green function, the wave field near the source was decomposed in Gaussian beam in different direction, then the wave field at a point is the superposition of individual Gaussian beams.Migration aperture is the key factor for Kirchhoff migration. In this thesis, the criterion for the choice of optimum aperture is discussed taking advantage of stationary phase analysis. Two equivalent methods are proposed, but the second is more preferable.Gaussian beam migration based on dip scanning and its procedure are developed. Take advantage of the travel time, amplitude, and takeoff angle calculated by Gaussian beam method, the migration is accomplished.Using the proposed migration method, I carry out the numerical calculation of simple theoretical model, Marmousi model and field data, and compare the results with that of Kirchhoff migration. The comparison shows that the new Gaussian beam migration method can get a better result over Kirchhoff migration, with fewer migration noise and clearer image at complex structures.
Resumo:
We present a method of image-speckle contrast for the nonprecalibration measurement of the root-mean-square roughness and the lateral-correlation length of random surfaces with Gaussian correlation. We use the simplified model of the speckle fields produced by the weak scattering object in the theoretical analysis. The explicit mathematical relation shows that the saturation value of the image-speckle contrast at a large aperture radius determines the roughness, while the variation of the contrast with the aperture radius determines the lateral-correlation length. In the experimental performance, we specially fabricate the random surface samples with Gaussian correlation. The square of the image-speckle contrast is measured versus the radius of the aperture in the 4f system, and the roughness and the lateral-correlation length are extracted by fitting the theoretical result to the experimental data. Comparison of the measurement with that by an atomic force microscope shows our method has a satisfying accuracy. (C) 2002 Optical Society of America.
Resumo:
A method for accurate determination of the curvature radius of semiconductor thin films is proposed. The curvature-induced broadening of the x-ray rocking curve (XRC) of a heteroepitaxially grown layer can be determined if the dependence of the full width at half maximum (FWHM) of XRC is measured as a function of the width of incident x-ray beam. It is found that the curvature radii of two GaN films grown on a sapphire wafer are different when they are grown under similar MOCVD conditions but have different values of layer thickness. At the same time, the dislocation-induced broadening of XRC and thus the dislocation density of the epitaxial film can be well calculated after the curvature correction.