暖温带落叶阔叶混交林能量生态学研究

本文是首篇研究中国暖温带落叶阔叶混交林能量生态学的论文。在文中，笔者以详实的第一手资料从能量环境、能量流动、能量组合以及能量平衡几个方面，全面、系统地阐述、分析了辽东栎林——这一暖温带落叶阔叶混交林典型自然群落代表的能量生态学特征。 在能量环境一章中，笔者从能量流动，能量平衡的角度出发重点研究了辽东栎群落的辐射能量环境特征。笔者以1991-1993年的观测资料为基础，从乔木、灌木和草本三个层次分析了生长季总辐射、散射辐射、直射辐射、反射辐射、净辐射、先合有效辐射、透射辐射、吸收辐射以及乔木层和灌木层反射率的季节动态和日进程特征，并从天文因子、气象因子和群落自身发育特征几方面解释分析了辐射能量环境的这种时空动态特征，同时，分析了这种变化特征对群落能量流动、分配和平衡过程可能产生的影响。 另外，笔者也对群落湿度和风速环境的时空动态特征进行了分析。 在能量流动一章，笔者以1992-1993年的野外实验资料为依据，沿季节动态、月际变化和日进程的时间轴，从群落、乔木层、灌木层、草本层以及各乔、灌木种群的空间尺度详细分析、阐述了太阳辐射能在森林群落内的流动和转化特征，并从能量环境和群落发育的角度解释分析了能量在群落内的这种时空分布和转化特征。所讨论的能流对象包括群落、乔、灌、草各层及各乔、灌木种群的总能流固定量、叶片呼吸耗能量、剩余能流固定量以及沿枯枝落叶流出的能流量。 与分析能流过程同步，笔者从上述的时、空尺度分别以生长季内太阳总辐射和光合有效辐射为基础计算、分析了森林群落的光能转化率特征。 在这一章的最后，笔者概述性地介绍了辽东栎群落的能量平衡特征 在第四章，笔者从能值的角度出发，以能量密度为标准讨论了能量沿群落各层及各乔、灌木种群的积累、分配和组合特征，并讨论了能量流动和光能转化率与热值和能量密度的关系。 辽东栎群落能量生态学的研究不但为了解暖温带落叶阔叶林生态系统的结构和功能，为恢复和重建退化的森林生态系统提供了丰富详实的理论信息，而且，也为山区人工林优化模式的组建提供了理论依据和实践指南。

Investigation of mode coupling in a microdisk resonator for realizing directional emission

Mode coupling between the whispering-gallery modes (WGMs) is numerically investigated for a two-dimensional microdisk resonator with an output waveguide. The equilateral-polygonal shaped mode patterns can be constructed by mode coupling in the microdisk, and the coupled modes can still keep high quality factors (Q factors). For a microdisk with a diameter of 4.5 mu m and a refractive index of 3.2 connected to a 0.6-mu m-wide output waveguide, the coupled mode at the wavelength of 1490 nm has a Q factor in the order of 10(4), which is ten times larger than those of the uncoupled WGMs, and the output efficiency defined as the ratio of the energy flux confined in the output waveguide to the total radiation energy flux is about 0.65. The mode coupling can be used to realize high efficiency directional-emission microdisk lasers. (C) 2009 Optical Society of America

Influence of heated catalyzer on thermal distribution of substrate in HWCVD system

Based on Stefan-Boltzman and Lambert theorems, the radiation energy distribution on substrate (REDS) from catalyzer with parallel filament geometry has been simulated by variation of filament and system layout in hot-wire chemical vapor deposition. The REDS uniformity is sensitive to the distance between filament and substrate d(f-s) when d(f-s) less than or equal to 4 cm. As d(f-s) > 4 cm, the REDS uniformity is independent of d(f-s) and is mainly determined by filament number and filament separation. Two-dimensional calculation shows that the REDS uniformity is limited by temperature decay at filament edges. The simulation data are in good agreement with experiments. (C) 2003 Elsevier Science B.V. All rights reserved.

Influence of heated catalyzer on thermal distribution of substrate in HWCVD system

Based on Stefan-Boltzman and Lambert theorems, the radiation energy distribution on substrate (REDS) from catalyzer with parallel filament geometry has been simulated by variation of filament and system layout in hot-wire chemical vapor deposition. The REDS uniformity is sensitive to the distance between filament and substrate d(f-s) when d(f-s) less than or equal to 4 cm. As d(f-s) > 4 cm, the REDS uniformity is independent of d(f-s) and is mainly determined by filament number and filament separation. Two-dimensional calculation shows that the REDS uniformity is limited by temperature decay at filament edges. The simulation data are in good agreement with experiments. (C) 2003 Elsevier Science B.V. All rights reserved.

Energy transfer between silicon-oxygen-related defects and Yb3+ in transparent glass ceramics containing Ba2TiSi2O 8 nanocrystals

We report on the conversion of near-ultraviolet radiation of 250-350 nm into near-infrared emission of 970-1100 nm in Yb3+-doped transparent glass ceramics containing Ba2TiSi2O8 nanocrystals due to the energy transfer from the silicon-oxygen-related defects to Yb3+ ions. Efficient Yb3+ emission (F-2(5/2)-> F-2(7/2)) was detected under the excitation of defects absorption at 314 nm. The occurrence of energy transfer is proven by both steady state and time-resolved emission spectra, respectively, at 15 K. The Yb2O3 concentration dependent energy transfer efficiency has also been evaluated, and the maximum value is 65% for 8 mol % Yb2O3 doped glass ceramic. These materials are promising for the enhancement of photovoltaic conversion efficiency of silicon solar cells via spectra modification.

Generation of intense extreme supercontinuum radiation via resonant propagation effects

Confinement of electromagnetic energy into a single well-controlled oscillation of light is very important for generation of intense supercontinuum radiation. We find that the pulse breakup of few-cycle ultrashort laser pulses via resonant propagation effects can achieve this aim. By extracting such pulses and then focusing them to drive the He atoms, about 200 eV intense supercontinuum radiation can be generated, which is capable of supporting similar to 20 attosecond isolated pulse generation.

Radiation damping effects on the ultrashort x-ray pulses generated by nonlinear Thomson backscattering

Nonlinear Thomson backscattering of an intense Gaussian laser pulse by a counterpropagating energetic electron is investigated by numerically solving the electron equation of motion taking into account the radiative damping force. The backscattered radiation characteristics are different for linearly and circularly polarized lasers because of a difference in their ponderomotive forces acting on the electron. The radiative electron energy loss weakens the backscattered power, breaks the symmetry of the backscattered-pulse profile, and prolongs the duration of the backscattered radiation. With the circularly polarized laser, an adjustable double-peaked backscattered pulse can be obtained. Such a profile has potential applications as a subfemtosecond x-ray pump and probe with adjustable time delay and power ratio. (c) 2006 American Institute of Physics.

Luminescence studies of Ce : YAG using vacuum ultraviolet synchrotron radiation

Photoluminescence spectrum of Ce:YAG single crystal was studied employing vacuum ultraviolet (VUV) synchrotron radiation. Intrinsic absorption edge at about 52,000 cm(-1) was observed in the absorption spectrum. From the VUV excitation spectrum, the energy of the highest d-component of 53,191 cm(-1) (188 nm) for the Ce3+ ions in YAG was obtained at 300 K. The disappearance of the third 5d level at 37,735 cm(-1) (265 nm) in absorption and excitation spectra in our samples may be due to the impurity Fe3+ ions absorption. (C) 2006 Elsevier Ltd. All rights reserved.

Solar UV radiation drives CO2 fixation in marine phytoplankton: A double-edged sword

Photosynthesis by phytoplankton cells in aquatic environments contributes to more than 40% of the global primary production (Behrenfeld et al., 2006). Within the euphotic zone (down to 1% of surface photosynthetically active radiation [PAR]), cells are exposed not only to PAR (400-700 nm) but also to UV radiation (UVR; 280-400 nm) that can penetrate to considerable depths (Hargreaves, 2003). In contrast to PAR, which is energizing to photosynthesis, UVR is usually regarded as a stressor (Hader, 2003) and suggested to affect CO2-concentrating mechanisms in phytoplankton (Beardall et al., 2002). Solar UVR is known to reduce photosynthetic rates (Steemann Nielsen, 1964; Helbling et al., 2003), and damage cellular components such as D1 proteins (Sass et al., 1997) and DNA molecules (Buma et al., 2003). It can also decrease the growth (Villafane et al., 2003) and alter the rate of nutrient uptake (Fauchot et al., 2000) and the fatty acid composition (Goes et al., 1994) of phytoplankton. Recently, it has been found that natural levels of UVR can alter the morphology of the cyanobacterium Arthrospira (Spirulina) platensis (Wu et al., 2005b). On the other hand, positive effects of UVR, especially of UV- A (315-400 nm), have also been reported. UV- A enhances carbon fixation of phytoplankton under reduced (Nilawati et al., 1997; Barbieri et al., 2002) or fast-fluctuating (Helbling et al., 2003) solar irradiance and allows photorepair of UV- B-induced DNA damage (Buma et al., 2003). Furthermore, the presence of UV-A resulted in higher biomass production of A. platensis as compared to that under PAR alone (Wu et al., 2005a). Energy of UVR absorbed by the diatom Pseudo-nitzschia multiseries was found to cause fluorescence (Orellana et al., 2004). In addition, fluorescent pigments in corals and their algal symbiont are known to absorb UVR and play positive roles for the symbiotic photosynthesis and photoprotection (Schlichter et al., 1986; Salih et al., 2000). However, despite the positive effects that solar UVR may have on aquatic photosynthetic organisms, there is no direct evidence to what extent and howUVR per se is utilized by phytoplankton. In addition, estimations of aquatic biological production have been carried out in incubations considering only PAR (i. e. using UV-opaque vials made of glass or polycarbonate; Donk et al., 2001) without UVR being considered (Hein and Sand-Jensen, 1997; Schippers and Lurling, 2004). Here, we have found that UVR can act as an additional source of energy for photosynthesis in tropical marine phytoplankton, though it occasionally causes photoinhibition at high PAR levels. While UVR is usually thought of as damaging, our results indicate that UVR can enhance primary production of phytoplankton. Therefore, oceanic carbon fixation estimates may be underestimated by a large percentage if UVR is not taken into account.

Photoregulated or energy dependent process of hormogonia differentiation in Nostoc sphaeroides Kutzing (Cyanobacterium)

Hormogonium, which was thought to play an important role in the dispersal and survival of these microorganisms in their natural habitats, is a distinguishable developmental stage of heterocystous cyanobacteria. The present study examined the effects of different light conditions and sugars on the differentiation of Nostoc sphaeroides Kutzing to the hormogonia stage. Results showed that differentiation of hormogonia was light dependent in the absence of sugar, but that close to 100% of cyanobacteria differentiated to hormogonia in the presence of glucose or sucrose, irrespective of the light conditions. This differentiation was inhibited, even in the presence of sugars, upon application of an inhibitor of respiration. Following the testing of different sugars, the effects of different lights were examined. It was found that 5 10 μ mol.m(-2)• s(-1) photon flux density was optimal for hormogonia differentiation. One hundred percent differentiation was obtained with white light irradiation, in contrast with irradiation with green light (80% differentiation) and red light (0-10% differentiation). Although they showed different efficiencies in inducing hormogonia differentiation in N. sphaeroides, the green and red radiation did not display antagonistic effects. When the additional aspect of time dependence was investigated through the application of different light radiations and an inhibitor of protein synthesis, it was found that the initial 6 h of the differentiation process was crucial for hormogonia differentiation. Taken together, these results show that hormogonia differentiation in N. sphaeroides is either a photoregulated or an energy dependent process.

Radiation hardness improvement of separation-by-implantation-of-oxygen/silicon-on-insulator material by nitrogen ion implantation

In our work, nitrogen ions were implanted into separation-by-implantation-of-oxygen (SIMOX) wafers to improve the radiation hardness of the SIMOX material. The experiments of secondary ion mass spectroscopy (SIMS) analysis showed that some nitrogen ions were distributed in the buried oxide layers and some others were collected at the Si/SiO2 interface after annealing. The results of electron paramagnetic resonance (EPR) suggested the density of the defects in the nitrided samples changed with different nitrogen ion implantation energies. Semiconductor-insulator-semiconductor (SIS) capacitors were made on the materials, and capacitance-voltage (C-V) measurements were carried out to confirm the results. The super total dose radiation tolerance of the materials was verified by the small increase of the drain leakage current of the metal-oxide-semiconductor field effect transistor with n-channel (NMOSFETs) fabricated on the materials before and after total dose irradiation. The optimum implantation energy was also determined.

Optical properties of phase-separated GaN1-xPx alloys grown by light-radiation heating metal-organic chemical vapour deposition

Based on the results of the temperature-dependent photoluminescence (PL) measurements, the broad PL emission in the phase-separated GaNP alloys with P compositions of 0.03, 0.07, and 0.15 has investigated. The broad PL peaks at 2.18, 2.12 and 1.83 eV are assigned to be an emission from the optical transitions from several trap levels, possibly the iso-electronic trap levels related to nitrogen. With the increasing P composition (from 0.03 to 0.15), these iso-electronic trap levels are shown to become resonant with the conduction band of the alloy and thus optically inactive, leading to the apparent red shift (80-160meV) of the PL peak energy and the trend of the red shift is strengthened. No PL emission peak is observed from the GaN-rich GaNP region, suggesting that the photogenerated carriers in the GaN-rich GaNP region may recombine with each other via non-radiation transitions.

Effects of crystalline quality on the phase stability of cubic boron nitride thin films under medium-energy ion irradiation

To investigate the effect of radiation damage on the stability and the compressive stress of cubic boron nitride (c-BN) thin films, c-BN films with various crystalline qualities prepared by dual beam ion assisted deposition were irradiated at room temperature with 300 keV Ar+ ions over a large fluence range up to 2 x 10(16) cm(-2). Fourier transform infrared spectroscopy (FTIR) data were taken before and after each irradiation step. The results show that the c-BN films with high crystallinity are significantly more resistant against medium-energy bombardment than those of lower crystalline quality. However, even for pure c-BN films without any sp(2)-bonded BN, there is a mechanism present, which causes the transformation from pure c-BN to h-BN or to an amorphous BN phase. Additional high resolution transmission electron microscopy (HRTEM) results support the conclusion from the FTIR data. For c-BN films with thickness smaller than the projected range of the bombarding Ar ions, complete stress relaxation was found for ion fluences approaching 4 x 10(15) cm(-2). This relaxation is accompanied, however, by a significant increase of the width of c-BN FTIR TO-line. This observation points to a build-up of disorder and/or a decreasing average grain size due to the bombardment. (c) 2005 Elsevier B.V. All rights reserved.