EMPIRICAL PSEUDOPOTENTIAL BAND-STRUCTURE CALCULATION FOR ZN1-XCDXSYSE1-Y QUATERNARY ALLOY

The band structure of the Zn1-xCdxSySe1-y quaternary alloy is calculated using the empirical pseudopotential method and the virtual crystal approximation. The alloy is found to be a direct-gap semiconductor for all x and y composition. Polynomial approximation is obtained for the energy gap as a function of the composition x and y. Electron and hole effective masses are also calculated along various symmetry axes for different compositions and the results agree fairly well with available experimental values.

Optical properties and structure of Sb-rich AgInSbTe phase change thin films

A new composition content quaternary-alloy-based phase change thin film, Sb-rich AgInSbTe, has been prepared by DC-magnetron sputtering on a K9 glass substrate. After the film has been subsequently annealed at 200degreesC for 30 min, it becomes a crystalline thin film. The diffraction peak of antimony (Sb) are observed by shallow (0.5 degree) x-ray diffraction in the quaternary alloy thin film. The analyses of the measurement from differential scanning calorimetry (DSC) show that the crystallization temperature of the phase change thin film is about 190degreesC and increases with the heating rate. By Kissinger plot, the activation energy for crystallization is determined to be 3.05eV. The reflectivity, refractive index and extinction coefficient of the crystalline and amorphous phase change thin films are presented. The optical absorption coefficient of the phase change thin films as a function of photon energy is obtained from the extinction coefficient. The optical band gaps of the amorphous and crystallization phase change thin films are 0.265eV and 1.127eV, respectively.

Mg acceptor energy levels in AlxInyGa1-x-yN quaternary alloys: An approach to overcome the p-type doping bottleneck in nitrides

The Mg-Ga acceptor energy levels in GaN and random Al8In4Ga20N32 quaternary alloys are calculated using the first-principles band-structure method. We show that due to wave function localization, the MgGa acceptor energy level in the alloy is significantly lower than that of GaN, although the two materials have nearly identical band gaps. Our study demonstrates that forming AlxInyGa1-x-yN quaternary alloys can be a useful approach to lower acceptor ionization energy in the nitrides and thus provides an approach to overcome the p-type doping difficulty in the nitride system.

p-type doping of GaInNAs quaternary alloys

Using the first-principles band-structure method, we investigate the p-type doping properties and band structural parameters of the random Ga1-xInxN1-yAsy quaternary alloys. We show that the Mg-Ga substitution is a better choice than ZnGa to realize the p-type doping because of the lower transition energy level and lower formation energy. The natural valence band alignment of GaAs and GaInNAs alloys is also calculated, and we find that the valence band maximum becomes higher with the increasing in composition. Therefore, we can tailor the band offset as desired which is helpful to confine the electrons effectively in optoelectronic devices. (C) 2008 Published by Elsevier B.V.

Crack-free InAlGaN quaternary alloy films grown on Si(111) substrate by metalorganic chemical vapor deposition

Crack-free In0.08Al0.25Ga0.67N quaternary films, with and without thick (> 1.5 mum) high-temperature-GaN (HTGaN) interlayer, have been grown on Si(1 1 1) substrates by a low-pressure metalorganic chemical vapor deposition (MOCVD) system. Mole fractions of In and Al in quaternary alloy layers are determined by Energy dispersive spectroscopy (EDS) and Rutherford backscattering spectrometry (RBS), which are recorded as similar to8% and similar to25-27%, respectively. High-resolution X-ray diffraction (HRXRD) and room temperature photoluminescence (RT-PL) results evidence the film's single crystal structure and the existence of local In- and/or Al-rich regions. Compared with GaN film grwon on Si(1 1 1) substrate, no crack is observed in the quaternary ones. Two explanations are proposed. First, mismatch-induced strain is relaxed significantly due to gradual changes of In concentration. Second, the weak In-N bond is likely to break when the sample is cooled down to the room temperature, which is expected to favor the releasing of thermal stress. (C) 2004 Elsevier B.V. All rights reserved.

Effects of the wave function localization in AlInGaN quaternary alloys

Using the first-principles band-structure method and the special quasirandom structures approach, the authors have investigated the band structure of random AlxInyGa1-x-yN quaternary alloys. They show that the wave functions of the band edge states are more localized on the InN sites. Consequently, the photoluminescence transition intensity in the alloy is higher than that in GaN. The valence band maximum state of the quaternary alloy is also higher than GaN with the same band gap, indicating that the alloy can be doped more easily as p-type. (c) 2007 American Institute of Physics.

Purification and structure identification of hyaluronic acid

Polysaccharide produced by mutated strain of Streptococcus zooepidemicus was purified by the procedures including Savage method, quaternary ammonium compound precipitation, DEAE-cellulose(DE52) chromatography and Sephadex G-75 gel filtration. The structure of the purified polysaccharide has been characterized by means of chemical composition analysis, C-13 NMR spectrum, infrared spectrum and circular dichroism (CD). All the results showed that the purified polysaccharide was hyaluronic acid (HA). The single helix conformation of the purified HA was determined by Congo red experiment. The molecular weight of the HA was about 1.16x10(6)D, which was measured by viscosity method.

Evolution and variation of the Tsushima warm current during the late Quaternary: Evidence from planktonic foraminifera, oxygen and carbon isotopes

The evolution and variation history of the Tsushima warm current during the late Quaternary was reconstructed based on the quantitative census data of planktonic foraminiferal fauna, together with oxygen and carbon isotope records of mixed layer dweller a ruber and thermocline dweller N. dutertrei in piston core CSH1 and core DGKS9603 collected separately from the Tsushima warm current and the Kuroshio dominated area. The result showed that the Tsushima warm current vanished in the lowstand period during 40-24 cal ka BP, while the Kuroshio still flowed across the Okinawa Trough, arousing strong upwelling in the northern Trough. Meanwhile, the influence of freshwater greatly increased in the northern Okinawa Trough, as the broad East China Sea continental shelf emerged. The freshwater reached its maximum during the last glacial maximum (LGM), when the upwelling obviously weakened for the lowest sea-level and the depression of the Kuroshio. The modern Tsushima warm current began its development since 16 cal ka BP, and the impact of the Kuroshio increased in the middle and northern Okinawa Trough synchronously during the deglaciation and gradually evolved as the main water source of the Tsushima current. The modern Tsushima current finally formed at about 8.5 cal ka BP, since then the circulation structure has been relatively stable. The water of the modern Tsushima current primarily came from the Kuroshio axis. A short-term wiggle of the current occurred at about 3 cal ka BP, probably for the influences from the enhancement of the winter monsoon and the depression of the Kuroshio. The cold water masses greatly strengthened during the wiggle.