crossmodal error correction of continuous handwriting recognition by speech

In recognition-based user interface, users’ satisfaction is determined not only by recognition accuracy but also by effort to correct recognition errors. In this paper, we introduce a crossmodal error correction technique, which allows users to correct errors of Chinese handwriting recognition by speech. The focus of the paper is a multimodal fusion algorithm supporting the crossmodal error correction. By fusing handwriting and speech recognition, the algorithm can correct errors in both character extraction and recognition of handwriting. The experimental result indicates that the algorithm is effective and efficient. Moreover, the evaluation also shows the correction technique can help users to correct errors in handwriting recognition more efficiently than the other two error correction techniques.

基于RS编码及网格编码调制的光PPM通信纠错技术

分析了RS（Reed-Solomon）纠错码和网格编码调制（Trellis Coded Modulation，TCM）技术在光脉冲位置调制通信中的应用．在此基础上，提出了以RS码作为外码，以网格编码调制技术作为内码，用于光脉冲位置调制通信的新编码方案，能以几乎不减少通信速率的优势，提高传统RS码系统在时变带限光信道中的通信性能．模拟研究了在不同空间光信道条件下，传统RS码的符号正确传输率和误码率，并对网格编码调制的编码增益、RS码与网格编码调制级联时的编码增益进行了仿真研究，证实了本方案的有效性．

光栅位移测量系统的误差自修正方法研究

文中介绍的误差自修正方法是通过光栅位移测量系统中单片机对光栅传感器的多个零位信号进行计数,并根据测量值和系统设定值得到的误差函数自动进行误差修正。实验结果表明,该方法对光栅位移测量系统的误差既可自动进行有效的修正,又可提高系统的测量精度。

A differential recursive scheme for suppression of Peak to average power ratio for OFDM

A differential recursive scheme for suppression of Peak to average power ratio (PAPR) for Orthogonal frequency division multiplexing (OFDM) signal is proposed in this thesis. The pseudo-randomized modulating vector for the subcarrier series is differentially phase-encoded between successive components in frequency domain first, and recursion manipulates several samples of Inverse fast Fourier transformation (IFFT) output in time domain. Theoretical analysis and experimental result exhibit advantage of differential recursive scheme over direct output scheme in PAPR suppression. And the overall block diagram of the scheme is also given.

Proposed scheme for parallel 10Gb/s VSR system and its Verilog HDL realization

This paper proposes a novel and innovative scheme for 10Gb/s parallel Very Short Reach (VSR) optical communication system. The optimized scheme properly manages the SDH/SONET redundant bytes and adjusts the position of error detecting bytes and error correction bytes. Compared with the OIF-VSR4-01.0 proposal, the scheme has a coding process module. The SDH/SONET frames in transmission direction are disposed as follows: (1) The Framer-Serdes Interface (FSI) gets 16x622.08Mb/s STM-64 frame. (2) The STM-64 frame is byte-wise stripped across 12 channels, all channels are data channels. During this process, the parity bytes and CRC bytes are generated in the similar way as OIF-VSR4-01.0 and stored in the code process module. (3) The code process module will regularly convey the additional parity bytes and CRC bytes to all 12 data channels. (4) After the 8B/10B coding, the 12 channels is transmitted to the parallel VCSEL array. The receive process approximately in reverse order of transmission process. By applying this scheme to 10Gb/s VSR system, the frame size in VSR system is reduced from 15552x12 bytes to 14040x12 bytes, the system redundancy is reduced obviously.

基于语音和笔的手写数学公式纠错方法

用识别技术的用户界面往往由于识别率的限制容易出错，如何为这类界面提供自然高效的纠错方法十分重要．手写数学公式具有二维结构，难以识别和纠错．提出一种用于纠正手写数学公式识别错误的多通道技术．它允许用户使用笔纠正切分错误，用笔和语音纠正符号识别和表达式结构分析错误．该技术的核心是一个多通道融合算法．融合算法以笔选择的符号和语音作为输入，根据语音输入的类型是数学术语或者数学符号分别选择融合方法，最后修正手写公式并输出最有可能的识别结果．实验结果表明，该技术能有效地纠正手写数学公式识别中的错误，它比基于笔的单通道纠错技术更加高效．

基于多通道融合的连续手写识别纠错方法

在基于识别的界面中,用户的满意度不但由识别准确度决定,而且还受识别错误的纠正过程的影响.提出一种基于多通道融合的连续手写笔迹识别错误的纠正方法.该方法允许用户通过口述书写内容纠正手写识别中的字符提取和识别的错误.该纠错方法的核心是一种多通道融合算法.该算法通过利用语音输入约束最优手写识别结果的搜索,可纠正手写字符的切分错和识别错.实验评估结果表明,该融合算法能够有效纠正错误,计算效率高.与另外两种手写识别错误纠正方法相比,该方法具有更高的纠错效率.

基于信道估计的RS纠错编码改进算法的设计与实现

提出了一种基于信道估计的RS纠错编码改进算法,该算法可以自适应地根据外界条件和环境对传输信道的干扰变化实时地调节编码系统的数据冗余量。仿真与完整的分析结果证实了该改进算法有效地改善了RS编码算法的传输效率;并且通过实际应用表明:良好的性能,高容错性适应于该通信系统的多种传输信道,具有很强的实用性。

Polaronic correction to the first excited electronic energy level in an anisotropic semiconductor quantum dot

Within the framework of second-order Rayleigh-Schrodinger perturbation theory, the polaronic correction to the first excited state energy of an electron in an quantum dot with anisotropic parabolic confinements is presented. Compared with isotropic confinements, anisotropic confinements will make the degeneracy of the excited states to be totally or partly lifted. On the basis of a three-dimensional Frohlich's Hamiltonian with anisotropic confinements, the first excited state properties in two-dimensional quantum dots as well as quantum wells and wires can also be easily obtained by taking special limits. Calculations show that the first excited polaronic effect can be considerable in small quantum dots.

Correcting the systematic error of the density functional theory calculation: the alternate combination approach of genetic algorithm and neural network

The alternate combinational approach of genetic algorithm and neural network (AGANN) has been presented to correct the systematic error of the density functional theory (DFT) calculation. It treats the DFT as a black box and models the error through external statistical information. As a demonstration, the AGANN method has been applied in the correction of the lattice energies from the DFT calculation for 72 metal halides and hydrides. Through the AGANN correction, the mean absolute value of the relative errors of the calculated lattice energies to the experimental values decreases from 4.93% to 1.20% in the testing set. For comparison, the neural network approach reduces the mean value to 2.56%. And for the common combinational approach of genetic algorithm and neural network, the value drops to 2.15%. The multiple linear regression method almost has no correction effect here.

Optical properties of GaN wurtzite quantum wires

The electronic structure and optical properties of freestanding GaN wurtzite quantum wires are studied in the framework of six-band effective-mass envelope function theory. It is found that the electron states are either twofold or fourfold degenerate. There is a dark exciton effect when the radius R of GaN wurtzite quantum wires is in the range of [0.7, 10.9] nm. The linear polarization factors are calculated in three cases, the quantum confinement effect (finite long wire), the dielectric effect and both effects (infinitely long wire). It is found that the linear polarization factor of a finite long wire whose length is much less than the electromagnetic wavelength decreases as R increases, is very close to unity (0.979) at R = I nm, and changes from a positive value to a negative value around R = 4.1 nm. The linear polarization factor of the dielectric effect is 0.934, independent of radius, as long as the radius remains much less than the electromagnetic wavelength. The result for the two effects shows that the quantum confinement effect gives a correction to the dielectric effect result. It is found that the linear polarization factor of very long (treated approximately as infinitely long) quantum wires is in the range of [0.8, 1]. The linear polarization factors of the quantum confinement effect of CdSe wurtzite quantum wires are calculated for comparison. In the CdSe case, the linear polarization factor of R = I nm is 0.857, in agreement with the experimental results (Hu et al 2001 Science 292 2060). This value is much smaller than unity, unlike 0.979 in the GaN case, mainly due to the big spin-orbit splitting energy Delta(so) of CdSe material with wurtzite structure.

Effects of rapid thermal annealing on the optical properties of GaNxAs1-x/GaAs single quantum well structure grown by molecular beam epitaxy

The effect of rapid thermal annealing (RTA) on the optical properties of GaNxAs1-x/GaAs strained single quantum well (SQW) was studied by low-temperature photoluminescence (PL). The GaNxAs1-x/GaAs SQW structures were prepared by dc active nitrogen plasma assisted molecular beam epitaxy. PL measurements on a series of samples with different well widths and nitrogen compositions were used to evaluate the effects of RTA. The annealing temperature and time were varied from 650 to 850 degrees C and 30 s to 15 min, respectively. Remarkable improvements of the optical properties of the samples were observed after RTA under optimum conditions. The interdiffusion constants have been calculated by taking into account error function diffusion and solving the Schrodinger equation. The estimated interdiffusion constants D are 10(-17)-10(-16) cm(2)/s for the earlier annealing conditions. Activation energies of 6-7 eV are obtained by fitting the temperature dependence of the interdiffusion constants. (C) 2000 American Institute of Physics. [S0021-8979(00)10401-3].

Conduction-band offset in a pseudomorphic GaAs/In0.2Ga0.8As quantum well determined by capacitance-voltage profiling and deep-level transient spectroscopy techniques

The conduction-band offset Delta E-C has been determined for a molecular beam epitaxy grown GaAs/In0.2Ga0.8As single quantum-well structure, by measuring the capacitance-voltage (C - V) profiling, taking into account a correction for the interface charge density, and the capacitance transient resulting from thermal emission of carriers from the quantum well, respectively. We found that Delta E-C = 0.227 eV, corresponding to about 89% Delta E-g, from the C - V profiling; and Delta E-C = 0.229eV, corresponding to about 89.9% Delta E-g, from the deep-level transient spectroscopy (DLTS) technique. The results suggest that the conduction-band discontinuity Delta E-C obtained from the C-V profiling is in good agreement with that obtained from the DLTS technique. (C) 1998 American Institute of Physics.

Wavelength tunable distributed Bragg reflector laser integrated with electro-absorption modulator by a combined method of selective area growth and quantum well intermixing - art. no. 68240N

Wavelength tunable electro-absorption modulated distributed Bragg reflector lasers (TEMLs) are promising light source in dense wavelength division multiplexing (DWDM) optical fiber communication system due to high modulation speed, small chirp, low drive voltage, compactness and fast wavelength tuning ability. Thus, increased the transmission capacity, the functionality and the flexibility are provided. Materials with bandgap difference as large as 250nm have been integrated on the same wafer by a combined technique of selective area growth (SAG) and quantum well intermixing (QWI), which supplies a flexible and controllable platform for the need of photonic integrated circuits (PIC). A TEML has been fabricated by this technique for the first time. The component has superior characteristics as following: threshold current of 37mA, output power of 3.5mW at 100mA injection and 0V modulator bias voltage, extinction ratio of more than 20 dB with modulator reverse voltage from 0V to 2V when coupled into a single mode fiber, and wavelength tuning range of 4.4nm covering 6 100-GHz WDM channels. A clearly open eye diagram is observed when the integrated EAM is driven with a 10-Gb/s electrical NRZ signal. A good transmission characteristic is exhibited with power penalties less than 2.2 dB at a bit error ratio (BER) of 10(-10) after 44.4 km standard fiber transmission.

Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation

Usually in the calculation of valence subband structure for III-V direct bandgap material, axial approximation had been used in the Luttinger-Kohn model to simplify the computational efforts. In this letter, the valence subband structure for the GaInP/AlGaInP strained and lattice-matched quantum wells was calculated without axial approximation, on the basis of 6x6 Luttinger-Kohn Hamiltonian including strain and spin-orbit splitting effects. The numerical simulation results were presented with help of the finite-difference methods. The calculation results with/without axial approximation were compared and the effect of axial approximation on the valence subband structure was discussed in detail. The results indicated that there was a strong warping in the GaInP valence band, and axial approximation can lead to an error when k was not equal to zero, especially for compressively strained and lattice-matched GaInP/AlGaInP quantum wells.