Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD

A flat, fully strain-relaxed Si0.72Ge0.28 thin film was grown on Si (1 0 0) substrate with a combination of thin low-temperature (LT) Ge and LT-Si0.72Ge0.28 buffer layers by ultrahigh vacuum chemical vapor deposition. The strain relaxation ratio in the Si0.72Ge0.28 film was enhanced up to 99% with the assistance of three-dimensional Ge islands and point defects introduced in the layers, which furthermore facilitated an ultra-low threading dislocation density of 5 x 10(4) cm (2) for the top SiGe film. More interestingly, no cross-hatch pattern was observed on the SiGe surface and the surface root-mean-square roughness was less than 2 nm. The temperature for the growth of LT-Ge layer was optimized to be 300 degrees C. (C) 2008 Elsevier B.V. All rights reserved.

A V-shaped module technique for promoting generation photocurrent density of silicon solar cells

A V-shaped solar cell module consists of two tilted mono-crystalline cells [J. Li, China Patent No. 200410007708.6 (March, 2004)]. The angle included between the two tilted cells is 90 degrees. The two cells were fabricated by using polished silicon wafers. The scheme of both-side polished wafers has been proposed to reduce optical loss. Compared to solar cells in a planar way, the V-shaped structure enhances external quantum efficiency and leads to an increase of 15% in generation photocurrent density. The following three kinds of trapped photons are suggested to contribute to the increase: (1) infrared photons converted from visible photons due to a transformation mechanism, (2) photons reflected from top contact metal, and (3) a residual reflection which can not be eliminated by an antireflection coating.

Promoting effects in hydrogenation and hydrodesulfurization reactions on the zirconia and titania supported catalysts

Tetralin hydrogenation (HYD) and thiophene hydrodesulfurization (HDS) were studied for the supported MoS2 and WS2 sulfides, either non-promoted or promoted with Co and Ni. The supports used were ZrO2, alumina-stabilized TiO2 and pure alumina. Preparation of catalysts included presulfidation of non-promoted system with subsequent addition of promoter and resulfidation. It has been found that the nature of promoter plays determining role for the catalytic performance. The most active in both HYD and HDS reactions are Ni-promoted Mo and W catalysts, supported on ZrO2. (C) 2003 Published by Elsevier B.V.

Promoting carbonization of polypropylene during combustion through synergistic catalysis of a trace of halogenated compounds and Ni2O3 for improving flame retardancy

The effect of combination between a trace of halogenated compounds (such as ferric chloride and ammonium bromide) and Ni2O3 particles on the carbonization of polypropylene (PP) was investigated during combustion. The results showed a synergistic catalysis of combined halogenated compounds with Ni2O3 in promoting the formation of the residual char during combustion. The investigation on the promotion mechanism showed that halide radical releasing from halogen-containing additives worked as a catalyst to accelerate dehydrogenation-aromatization of degradation products of PR which promote the degradation products to form the residual char catalyzed by nickel catalyst.

Investigations on the promoting effect of metal oxides on La-V-O catalyst in propane oxidative dehydrogenation

The addition of reducible metal oxides as promoters shows a positive effect on the catalytic behavior of lanthanum vanadate (LaVO4). A C3H6 yield increase of 6.5% is observed at 500 degreesC on molybdenum-promoted LaVO4, which can be attributed to the change of the redox properties, the blocking of the strong oxidation sites of the catalysts and to an increase of the accessibility of the labile oxygen toward the reactant. The influence of the catalyst preparation method and of the Mo loading as well as the additional promoting effect of CO2 in the gas feed was also examined.