Very low hysteresis organic thin-film transistors

Very low hysteresis vanadyl-phthalocyanine/para-sexiphenyl thin-film transistors (TFTs) have been fabricated using benzocyclobutenone (BCBO) derivatives/tantalum pentoxide (Ta2O5)/BCBO triple gate dielectrics. The field effect mobility, on/off current ratio and threshold voltage of organic TFTs are 0.45 cm(2) V-1 s(-1), 3.5 x 10(4) and -6.8 V, respectively. To clarify the mechanism of hysteresis, devices with different dielectrics have been studied. It is found that the bottom BCBO derivatives (contact with a gate electrode) block the electron injection from a gate electrode to dielectrics.

ELECTROCHEMICAL PREPARATION OF MICROELECTRODES MODIFIED WITH NONSTOICHIOMETRIC MIXED-VALENT MOLYBDENUM OXIDES

A blue, conductive, compact, mixed-valent Mo(VI, V) oxide film was grown on carbon fiber (CF) microelectrode surface by cycling the potential between +0.20 and -0.70 V vs. SCE in a fresh prepared Na2MoO4 solution (pH = 2, H2SO4). The thickness of the oxid