Fabrication of photonic crystals on several kinds of semiconductor materials by using focused-ion beam method

In this paper, we introduced the fabrication of photonic crystals on several kinds of semiconductor materials by using focused-ion beam machine, it shows that the method of focused-ion beam can fabricate two-dimensional photonic crystal and photonic crystal device efficiently, and the quality of the fabricated photonic crystal is high. Using the focused-ion beam method, we fabricate photonic crystal wavelength division multiplexer, and its characteristics are analyzed. (c) 2007 Elsevier B.V. All rights reserved.

Fabrication of photonic crystal on semiconductor materials by using focued ion-beam

A method of manufacturing two-dimensional photonic crystals on several kinds of semiconductor materials in near infrared region by a focused ion beam is introduced, and the corresponding fabrication results are presented and show that the obtained parameters of fabricated photonic crystals are identical with the designed ones. Using the tunable laser source, the spectra of the fabricated passive photonic crystal and the active photonic crystal are measured. The experiment demonstrates that the focused ion-beam can be used to fabricate the perfect two-dimensional photonic crystals and their devices.

Study on in-plane optical anisotropy of semiconductor materials by reflectance difference spectroscopy

In the present review, the measuring principle of reflectance difference spectroscopy (RDS) is given. As a powerful tool in the surface and interface analysis technologies, the application of RDS to the research on semiconductor materials is summarized. along with the origins of the in-plane optical anisotropy of semiconductors. And it is believed that RDS will play an important role in the electrooptic modification of Si-based semiconductor materials.

New progress of studies on semiconductor materials

This paper is a review of research and development on semiconductor materials, which covers main scientific activities in this field. The present status acid future prospects of studies on semiconductor materials, such as silicon crystals, GaAs related III-V compound semiconductor materials and GaAs, InP and silicon based quantum well and superlattice materials, quantum wires and quantum dots materials, microcavity and photonic crystals, materials for quantum computation and wide band gap materials, are briefly discussed.

Research and Development of Electronic and Optoelectronic Materials in China

于2010-11-23批量导入

Chiral synthesis on catalysts immobilized in microporous and mesoporous materials

This paper reviews the recent progress made in the asymmetric synthesis on chiral catalysts in porous materials and discusses the effects of surface and pores on enantio-selectivity (confinement effect). This paper also summarizes various approaches of immobilization of the chiral catalysts onto surfaces and into pores of solid inorganic supports such as microporous and mesoporous materials. The most important reactions surveyed for the chiral synthesis in porous materials include epoxidation. hydrogenation, hydroformylation, Aldol and Diels-Alder reactions, etc. The confinement effect originated from the surfaces and the pores turns out to be a general phenomenon. which may make the enantioselectivity increase (positive effect) or decrease (negative effect). The confinement effect becomes more pronounced particularly when the bonding between the catalyst and the surface is more rigid and the pore size is tuned to a suitable range. It is proposed that the confinement in chiral synthesis is essentially a consequence of subtle change in transition states induced by weak-interaction in pores or on surfaces. It is also anticipated that the enantioselectivity could be improved by tuning the confinement effect based on the molecular designing of the pore/surface and the immobilized catalysts according to the requirements of chiral reactions.

Low-compressibility and hard materials ReB2 and WB2: Prediction from first-principles study

First-principle calculations are performed to investigate the structural, elastic, and electronic properties of ReB2 and WB2. The calculated equilibrium structural parameters of ReB2 are consistent with the available experimental data. The calculations indicate that WB2 in the P6(3)/mmc space group is more energetically stable under the ambient condition than in the P6/mmm. Based on the calculated bulk modulus, shear modulus of polycrystalline aggregate, ReB2 and WB2 can be regarded as potential candidates of ultra-incompressible and hard materials. Furthermore, the elastic anisotropy is discussed by investigating the elastic stiffness constants. Density of states and electron density analysis unravel the covalent bonding between the transition metal atoms and the boron atoms as the driving force of the high bulk modulus and high shear modulus as well as small Poisson's ratio.

飞秒双脉冲激光在硅和石英中的光学破坏

The optical breakdown thresholds (OBTs) of typical dielectric and semiconductor materials are measured using double 40-fs laser pulses. By measuring the OBTs with different laser energy and different time delays between the two pulses, we found that the total energy of breakdown decrease for silica and increase for silicon with the increase of the first pulse energy. (C) 2005 Optical Society of America.

A novel method of determining semiconductor parameters in EBIC and SEBIV modes of SEM

We present a novel method for determining semiconductor parameters such as diffusion length L, lifetime tau and surface recombination velocity S of minority carriers by employing scanning electron microscopy (SEM). This new method is applicable to both electron beam induced current (EBIC and surface electron beam induced voltage (SEBIV) modes in SEM. The quantitative descriptions for EBIC and SEBIV signals are derived. The parameters L, S and tau can be directly extracted from the expressions for EBIC or SEBIV signals and their relaxation characteristics in experiment. As an example, the values of L, S and tau for n-p junction and p-Si crystal are determined by using the novel method in EBIC or SEBIV mode. The carrier diffusion length of a p-Si crystal is determined to be 8.74 mum in SEBIV mode. It is very close to the normal diffusion length of 7.41 mum of this sample. The novel method is proved to be very helpful for the quantitative characterization of semiconductor materials and devices. Especially, the SEBIV mode in SEM shows great potential for investigating semiconductor structures nondestructively.

Abatement of waste gases and water during the processes of semiconductor fabrication

The purpose of this article is to examine the methods and equipment for abating waste gases and water produced during the manufacture of semiconductor materials and devices. Three separating methods and equipment are used to control three different groups of electronic wastes. The first group includes arsine and phosphine emitted during the processes of semiconductor materials manufacture. The abatement procedure for this group of pollutants consists of adding iodates, cupric and manganese salts to a multiple shower tower (MST) structure. The second group includes pollutants containing arsenic, phosphorus, HF, HCl, NO2, and SO3 emitted during the manufacture of semiconductor materials and devices. The abatement procedure involves mixing oxidants and bases in an oval column with a separator in the middle. The third group consists of the ions of As, P and heavy metals contained in the waste water. The abatement procedure includes adding CaCO3 and ferric salts in a flocculation-sedimentation compact device equipment. Test results showed that all waste gases and water after the abatement procedures presented in this article passed the discharge standards set by the State Environmental Protection Administration of China.

Crack extension and kinking in laminates and bicrystals

Singular fields at the tip of an interface crack in anisotropic solids are reviewed with emphasis on establishing a framework to quantify fracture resistance under mixed mode conditions. The concepts of mode mixity and surface toughness are unified by using generalized interface traction components. The similarity between the anisotropic theory and existing isotropic theory is shown. Explicit formulae are given for misoriented orthotropic bimaterials with potential applications envisioned including composite laminates and semiconductor crystals. Competition between crack extension along the interface and kinking into the substrate is investigated using a boundary layer formulation. Several case studies reveal the role of anisotropy. An explicit complex variable representation for orthotropic materials and a solution to a dislocation interacting with a crack are presented in two self-contained Appendices.

Easy axis reorientation and magneto-crystalline anisotropic resistance of tensile strained (Ga,Mn)As films

We present a study of magnetic anisotropy by using magneto-transport and direct magnetization measurements on tensile strained (Ga,Mn)As films. The magnetic easy axis of the films is in-plane at low temperatures, while the easy axis flips to out-of-plane when temperature is raised or hole concentration is increased. This easy axis reorientation is explained qualitatively in a simple physical picture by Zeners pd model. In addition, the magneto-crystalline anisotropic resistance was also investigated experimentally and theoretically based on the single magnetic domain model. The dependence of sheet resistance on the angle between the magnetic field and [1 0 0] direction was measured. It is found that the magnetization vector M in the single-domain state deviates from the external magnetic field H direction at low magnetic field, while for high magnetic field, M continuously moves following the field direction, which leads to different resistivity function behaviors.

Monolithically integrated semiconductor optical amplifier and electroabsorption modulator with dual-waveguide spot-size converter input and output

We have demonstrated an electroabsorption modulator and semiconductor optical amplifier monolithically integrated with novel dual-waveguide spot-size converters (SSC) at the input and output ports for low-loss coupling to a planar light-guide circuit silica waveguide or cleaved single-mode optical fibre. The device was fabricated by means of selective-area MOVPE growth, quantum well intermixing and asymmetric twin waveguide technologies with only a three-step low-pressure MOVPE growth. For the device structure, in the SOA/EAM section, a double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge structure (BRS) was incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of easy processing of the ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB dc and more than 10 GHz 3 dB bandwidth is successfully achieved, The beam divergence angles of the input and output ports of the device are as small as 8.0 degrees x 12.6 degrees, resulting in 3.0 dB coupling loss with a cleaved single-mode optical fibre.

Back-to-back Schottky diode adopted for the measurement of GaN films and its Schottky contacts

A new measurement method for GaN films and their Schottky contacts is reported in this paper. Instead of the fabrication of Ohmic contacts, this measurement is based on a special back-to-back Schottky diode that has a rectifying character. A mathematical model indicates that the electronic parameters of the materials can be deduced from the device's I-V data. In the experiment of an unintentionally doped n-type GaN layer with a residual carrier density 7 x 10(16) cm(-3), the analysis by the new method gives the layer's sheet resistance rho(s) = 497 Omega, the electron mobility mu(n) =, 613 cm(2) V-1 s(-1) and the ideality factor of the Ni/Au-GaN Schottky contacts n = 2.5, which are close to the data obtained by the traditional measurements: rho(s) = 505 Omega, mu(n) = 585 cm(2) V-1 s(-1) and n = 3.0. The method reported can be adopted not only for GaN films but also for other semiconductor materials, especially in the cases where Ohmic contacts of high quality are hard to make or their fabricating process affects the film's character.