Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures

Using the measured capacitance-voltage curves and the photocurrent spectrum obtained from the Ni Schottky contact on a strained Al0.3Ga0.7N/GaN heterostructure, the value of the relative permittivity of the AlGaN barrier layer was analysed and calculated by self-consistently solving Schrodinger's and Poisson's equations. It is shown that the calculated values of the relative permittivity are different from those formerly reported, and reverse biasing the Ni Schottky contact has an influence on the value of the relative permittivity. As the reverse bias increases from 0 V to - 3 V, the value of the relative permittivity decreases from 7.184 to 7.093.

Photoelectrochemical behavior of a novel composite In0.15Ga0.85As/GaAs vertical bar GaAs/Al0.3Ga0.7As multiple quantum well electrode

A novel composite InxGa1-xAs/GaAs/GaAs/AlxGa1-xAs multiple quantum well material with different well widths was studied as a new kind of photoelectrode in a photoelectrochemical cell. The photocurrent spectrum and photocurrent-electrode potential curve were measured in ferrocene nonaqueous solution. Pronounced quantization effects and strong exciton absorption were observed in the photocurrent spectrum. The effects of surface states and interfacial states on the photocurrent-electrode potential curve are discussed. (C) 2000 Elsevier Science S.A. All rights reserved.

THEORETICAL INVESTIGATION OF THE DYNAMIC PROCESS OF THE ILLUMINATION OF GAAS

The dynamic process of light illumination of GaAs is studied numerically in this paper to understand the photoquenching characteristics of the material. This peculiar behavior of GaAs is usally ascribed to the existence of EL2 states and their photodriven metastable states. To understand the conductivity quenching, we have introduced nonlinear terms describing the recombination of the nonequilibrium free electrons and holes into the calculation. Though some photoquenching such as photocapacitance, infrared absorption, and electron-paramagnetic-resonance quenching can be explained qualitatively by only considering the internal transfer between the EL2 state and its metastability, it is essential to take the recombination into consideration for a clear understanding of the photoquenching process. The numerical results and approximate analytical approach are presented in this paper for the first time to our knowledge. The calculation gives quite a reasonable explanation for n-type semiconducting GaAs to have infrared absorption quenching while lacking photoconductance quenching. Also, the calculation results have allowed us to interpret the enhanced photoconductance phenomenon following the conductance quenching in typical semi-insulating GaAs and have shown the expected thermal recovery temperature of about 120 K. The numerical results are in agreement with the reported experiments and have diminished some ambiguities in previous works.

Organic photovoltaic cells with near infrared absorption spectrum

Organic photovoltaic cells with a strong absorption spectrum in the near infrared region were fabricated with the structure of indium tin oxide (ITO)/zinc phthalocynine (ZnPc)/lead phthalocynine (PbPc)/C-60/Al. PbPc has a broad and strong absorption, while the organic films of PbPc/C-60 showed an additional new absorption peak at 900 nm. The absorption in the near infrared region can harvest more photons to invert into photocurrent. Moreover, the introduction of ZnPc thin layer between ITO and PbPc further improved the new absorption peak and the collection of hole carriers at the electrode ITO, which increased the power conversion efficiencies to 1.95% and short-circuit current density to 9.1 mA/cm(2) under AM 1.5 solar spectrum.

Transmission spectrum of a double quantum-dot-nanocavity system in photonic crystals

We investigate the optical transmission properties of a combined system which consists of two quantum-dot-nanocavity subsystems indirectly coupled to a waveguide in a planar photonic crystal. A Mollow-like triplet and the growth of sidebands are found, reflecting intrinsic optical responses in the complex microstructure.

Energy spectrum of fermionized bosonic atoms in optical lattices

We investigate the energy spectrum of fermionized bosonic atoms, which behave very much like spinless noninteracting fermions, in optical lattices by means of the perturbation expansion and the retarded Green's function method. The results show that the energy spectrum splits into two energy bands with single-occupation; the fermionized bosonic atom occupies nonvanishing energy state and left hole has a vanishing energy at any given momentum, and the system is in Mott-insulating state with a energy gap. Using the characteristic of energy spectra we obtained a criterion with which one can judge whether the Tonks-Girardeau (TG) gas is achieved or not.

Energy spectrum of two-component Bose-Einstein condensates in optical lattices

With the method of Green's function, we investigate the energy spectra of two-component ultracold bosonic atoms in optical lattices. We End that there are two energy bands for each component. The critical condition of the superfluid-Mott insulator phase transition is determined by the energy band structure. We also find that the nearest neighboring and on-site interactions fail to change the structure of energy bands, but shift the energy bands only. According to the conditions of the phase transitions, three stable superfluid and Mott insulating phases can be found by adjusting the experiment parameters. We also discuss the possibility of observing these new phases and their transitions in further experiments.

Energy spectrum of ground state and excitation spectrum of quasi-particle for hard-core boson in optical lattices

We investigate the energy spectrum of ground state and quasi-particle excitation spectrum of hard-core bosons, which behave very much like spinless noninteracting fermions, in optical lattices by means of the perturbation expansion and Bogoliubov approach. The results show that the energy spectrum has a single band structure, and the energy is lower near zero momentum; the excitation spectrum gives corresponding energy gap, and the system is in Mott-insulating state at Tonks limit. The analytic result of energy spectrum is in good agreement with that calculated in terms of Green's function at strong correlation limit.

Hit-or-miss representation of a pattern spectrum and its optical implementation

We demonstrate that a pattern spectrum can be decomposed into the union of hit-or-miss transforms with respect to a series of structure-element pairs. Moreover we use a Boolean-logic function to express the pattern spectrum and show that the Boolean-logic representation of a pattern spectrum is composed of hit-or-miss min terms. The optical implementation of a pattern spectrum is based on an incoherent optical correlator with a feedback operation. (C) 1996 Optical Society of America

Digital holographic interferometry and the angular spectrum method applied to measuring the domain inversion in ferroelectric crystal

The application of digital holographic interferometry on the quantitative measurement of the domain inversion in a RuO2: LiNbO3 crystal wafer is presented. The recorded holograms are reconstructed by the angular spectrum method. From the reconstructed phase distribution we can clearly observe the boundary between the inverted and un-inverted domain regions. Comparisons with the results reconstructed by use of the Fresnel transform method are given. Factors that influence the measurement include the spectrum filter size and the spectrum movement are discussed. The spectrum filter size has an effect on the measurement of the details. Although the spectrum movement affects every single reconstructed image, it has no influence on the final measurement.

Fabrication and amplified spontaneous emission spectrum of Er3+-doped tellurite glass fiber with D-shape cladding

Tellurite glass is proposed as a host for broadband erbium-doped fiber amplifiers because of their excellent optical and chemical properties. A single-mode Er3+-doped tellurite glass fiber with D-shape cladding was fabricated in this work. The characterization of amplified spontaneous emission (ASE) from this newly fabricated Er3+-doped tellurite fibers are exhibited. When pumped at 980 nm, a very broad erbium ASE nearly 150 nm around 1.53 mum is observed. The changes in ASE with regard to fiber lengths and pumping power were measured and discussed. The output of 2 mW from Er3+-doped tellurite fiber ASE source was obtained under the pump power of 660 mW. The broad 1.53 mum emission of Er3+ in tellurite glass fiber can be used as host material for potential broadband optical amplifier and tunable fiber lasers. (C) 2004 Elsevier B.V. All rights reserved.

Judd-Oflet analysis of spectrum and laser performance of Ho:YAP crystal end-pumped by 1.91-mu m Tm:YLF laser

The Ho:YAP crystal is grown by the Czochralski technique. The room-temperature polarized absorption spectra of Ho:YAP crystal was measured on a c-cut sample with 1 at% holmium. According to the obtained Judd-Ofelt intensity parameters Omega(2) = 1.42 x 10(-20) cm(2), Omega(4) = 2.92 x 10(-20) cm(2), and Omega(6) = 1.71 x 10(-20) cm(2), this paper calculated the fluorescence lifetime to be 6 ms for I-5(7) -> I-5(8) transition, and the integrated emission cross section to be 2.24 x 10(-18) cm(2). It investigates the room-temperature Ho:YAP laser end-pumped by a 1.91-mu m Tm:YLF laser. The maximum output power was 4.1 W when the incident 1.91-mu m pump power was 14.4W. The slope efficiency is 40.8%, corresponding to an optical-to-optical conversion efficiency of 28.4%. The Ho:YAP output wavelength was centred at 2118 nm with full width at half maximum of about 0.8 nm.