Contingent sensitivity to configuration in a nonlinear evolution system

A trans-scopic sensitivity of macroscopic failure to slight differentiation in the meso-scopic structure of a system with nonlinear evolution is reported. A periodical chain following a non-local load-sharing evolution was applied as a propotype in failure study. The results demonstrate that there is a transition region composed of globally stable (GS) and evolution induced catastrophic (EIC) modes. That is different from a critical threshold as predicted by percolation and renormalization group theories. Moreover, the EIC mode shows a distinctive sample specific behaviour. For instance, some neighbouring initial states may evolve into completely different final states, though different initial states can evolve into the same final states. As an example, a marginal configuration of EIC mode, a quasi-Fibonacci skeleton, is constructed.

Asymptotic solutions to a class of nonlinear oscillation systems

In this paper, we present an asymptotic method for the analysis of a class of strongly nonlinear oscillators, derive second-order approximate solutions to them expressed in terms of their amplitudes and phases, and obtain the equations governing the amplitudes and phases, by which the amplitudes of the corresponding limit cycles and their behaviour can be determined. As an example, we investigate the modified van der Pol oscillator and give the second-order approximate analytical solution of its limit cycle. The comparison with the numerical solutions shows that the two results agree well with each other.

CHARACTERIZATION OF PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES UNDER NONLINEAR MODE CONDITION

A photoconductive semiconductor switch (PCSS) would work in a nonlinear mode under high biased electrical field. The experimental results of nonlinear critical state have shown that both the biased voltage and the laser energy may have working thresholds to turn on the nonlinear modes. The relation between the biased voltage (aid the laser energy is inverse ratio, i.e., higher biased field need lower laser energy for nonlinear mode, and vise versa. At the nonlinear critical point, the output of PCSS is unstable, as both the linear and nonlinear pulse may occur. As the laser energy and biased field increase, the PCSS would work in the nonlinear mode steadily. (C) 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 56-59 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOT 10.1002/mop.24001

Electrical Transport Properties of Annealed Undoped InP

The electrical properties of annealed undoped n-type InP are studied by temperature dependent Hall effect (TDH) and current-voltage (I-V) measurements for semiconducting and semi-insulating samples, receptively. Defect band conduction in annealed semiconducting InP can be observed from TDH measurement, which is similar to those of as-grown unintentionally doped InP with low carrier concentration and moderate compensation. The I-V curves of annealed undoped SI InP exhibit ohmic property in the applied field region up to the onset of breakdown. Such a result is different from that of as-grown Fe-doped SI InP which has a nonlinear region in I-V curve explained by the theory of space charge limited current.

Electrical characteristics of copper phthalocyanine thin-film transistors with polyamide-6/polytetrafluoroethylene gate insulator

Polyamide- 6(PA 6)/polytetrafluoroethylene is studied as a potential gate dielectric for flexible organic thin film transistors. The same method used for the formation of organic semiconductor and gate dielectric films greatly simplifies the fabrication process of devices. The fabricated transistors show good electrical characteristics. Ambipolar behaviour is observed even when the device is operated in air.